BD684

PNP BD684 NPN BD683 SILICON DARLINGTON POWER TRANSISTORS The BD684 are PNP eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. NPN complements are BD683 . ABSOLUTE MAXIMUM RATINGS Symbol -VCEO -VCBO -VEBO Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base current (peak value) Total power Dissipation Junction Temperature Storage Temperature Ratings Value 120 120 5 -I C -ICM -IBM @ Tmb = 25°C 4 6 0.1 Unit V V V A A Watts °C °C -I C -I B PT TJ TStg 40 150 -65 to +150 THERMAL CHARACTERISTICS Symbol RthJ-mb RthJ-a Ratings Thermal Resistance, Junction to mouting base Thermal Resistance, Junction to ambient in free air Value 3.12 100 Unit K/W K/W COMSET SEMICONDUCTORS 1 PNP BD684 NPN BD683 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol -ICBO -ICEO -IEBO -VCE(SAT) hFE -VBE hfe fhfe VF Ratings Collector cut-off current Collector cut-off current Emitter cut-offcurrent Collector-Emitter saturation Voltage DC Current Gain Test Condition(s) IE=0 , -VCB= -VCEOMAX=120 V IE=0 , -VCB= -1/2VCBOMAX= 60V,Tj= 150°C IB=0 , -VCE= -1/2VCEOMAX=60 V IC=0, -VEB=5 V -IC=1.5 A, -IB=6 Ma -VCE=3 V, -IC=500 mA -VCE=3 V, -IC=1,5 A -VCE=3 V, -IC=4 A -VCE=3 V, -IC=1,5 A -VCE=3 V, -IC=1,5 A, f= 1 MHz -VCE=3 V, -IC=1,5 A IF=1,5 A -VCE=50 V, tP= 20ms,non rep., without heatsink (BD676 ; VCE=40 V ) Min Typ 750 10 0,8 2200 650 60 1,5 0,8 4,5 M Unit x 0,2 1 0,2 5 2,5 2,5 2 8 mA mA mA V Base-Emitter Voltage(1&2) Small signal current gain Ut-off frequency Diode forward voltage Second-breakdown -I(SB) collector current Turn-on time ton -Icon= 1,5A, Ibon= -Iboff= 6mA, VCC=30V Turn-off time toff 1. Measured under pulse conditions :tP