BDV67A, B, C, D NPN SILICON DARLINGTONS POWER TRANSISTORS
The BDV67 is epitaxial base Darlington transistors for audio output stages and general amplifier and switching applications. The complementary is BDV66A, B, C, D.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
Collector-Emitter Voltage
Ratings
BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B IC BDV67C BDV67D BDV67A BDV67B ICM BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B @ Tmb = 25° C BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D
Value
80 100 120 150 100 120 140 160 5.0
Unit
V
VCBO
Collector-Base Voltage
V
VEBO
Emitter-Base Voltage
V
16
IC
Collector Current
A
20
IB
Base Current
0.5
A
PT
Power Dissipation
200
Watts
TJ
Junction Temperature
150 °C -65 to +150
TS
Storage Temperature
COMSET SEMICONDUCTORS
1/5
BDV67A, B, C, D
THERMAL CHARACTERISTICS Symbol
RthJ-mb
Ratings
Thermal Resistance, Junction to Mounting Base BDV67A BDV67B BDV67C BDV67D
Value
0.625
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
VCE=40 V
Test Condition(s) BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D
Min Typ Mx Unit
5.0 1 mA 5 mA 3 mA
ICEO
Collector Cutoff Current
VCE=50 V VCE=60 V VCE=75 V
IEBO
Emitter Cutoff Current
VBE=5 V
Tj=25°C, VCB= VCBO
ICBO
Collector-Base Cutoff Current
Tj=150°C, VCB= VCBO
-
-
COMSET SEMICONDUCTORS
2/5
BDV67A, B, C, D
M Unit x
2 -
Symbol
hFE
Ratings
DC Current Gain Collector-Emitter saturation Voltage (*)
Test Condition(s)
VCE=3 V, IC=1 A VCE=3 V, IC=10 A VCE=3 V, IC=16 A IC=10 A, IB=40 mA
Min
1000 -
Typ
3000 1000 -
VCE(SAT)
VBE
Base-Emitter Voltage(1&2)
VCE=3 V, IC=10 A
VF
Diode forward voltage
IF=10 A
Cc
IE=0 A, VCB=10V
ton
Switching times
VCC=12V, IC=-10 A IB1=-IB2=0.04 A
toff
fhfe
VCE=-3 V, IC=-5 A
BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D
-
V
-
-
2,5
V
-
-
3
V
-
300
-
pF
-
1
µs
-
3.5
-
-
60
-
kHz
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit
COMSET SEMICONDUCTORS
3/5
BDV67A, B, C, D
MECHANICAL DATA CASE TO-3P (TO247)
Pin 1 : Pin 2 : Pin 3 :
Base Collector Emitter
COMSET SEMICONDUCTORS
4/5
BDV67A, B, C, D
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice
COMSET SEMICONDUCTORS
5/5
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