BDV67C

BDV67A, B, C, D NPN SILICON DARLINGTONS POWER TRANSISTORS The BDV67 is epitaxial base Darlington transistors for audio output stages and general amplifier and switching applications. The complementary is BDV66A, B, C, D. ABSOLUTE MAXIMUM RATINGS Symbol VCEO Collector-Emitter Voltage Ratings BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B IC BDV67C BDV67D BDV67A BDV67B ICM BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B @ Tmb = 25° C BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D Value 80 100 120 150 100 120 140 160 5.0 Unit V VCBO Collector-Base Voltage V VEBO Emitter-Base Voltage V 16 IC Collector Current A 20 IB Base Current 0.5 A PT Power Dissipation 200 Watts TJ Junction Temperature 150 °C -65 to +150 TS Storage Temperature COMSET SEMICONDUCTORS 1/5 BDV67A, B, C, D THERMAL CHARACTERISTICS Symbol RthJ-mb Ratings Thermal Resistance, Junction to Mounting Base BDV67A BDV67B BDV67C BDV67D Value 0.625 Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings VCE=40 V Test Condition(s) BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D Min Typ Mx Unit 5.0 1 mA 5 mA 3 mA ICEO Collector Cutoff Current VCE=50 V VCE=60 V VCE=75 V IEBO Emitter Cutoff Current VBE=5 V Tj=25°C, VCB= VCBO ICBO Collector-Base Cutoff Current Tj=150°C, VCB= VCBO - - COMSET SEMICONDUCTORS 2/5 BDV67A, B, C, D M Unit x 2 - Symbol hFE Ratings DC Current Gain Collector-Emitter saturation Voltage (*) Test Condition(s) VCE=3 V, IC=1 A VCE=3 V, IC=10 A VCE=3 V, IC=16 A IC=10 A, IB=40 mA Min 1000 - Typ 3000 1000 - VCE(SAT) VBE Base-Emitter Voltage(1&2) VCE=3 V, IC=10 A VF Diode forward voltage IF=10 A Cc IE=0 A, VCB=10V ton Switching times VCC=12V, IC=-10 A IB1=-IB2=0.04 A toff fhfe VCE=-3 V, IC=-5 A BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D - V - - 2,5 V - - 3 V - 300 - pF - 1 µs - 3.5 - - 60 - kHz (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit COMSET SEMICONDUCTORS 3/5 BDV67A, B, C, D MECHANICAL DATA CASE TO-3P (TO247) Pin 1 : Pin 2 : Pin 3 : Base Collector Emitter COMSET SEMICONDUCTORS 4/5 BDV67A, B, C, D Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice COMSET SEMICONDUCTORS 5/5