BDX34

NPN BDX33 – BDX33A – BDX33B – BDX33C PNP BDX34 – BDX34A – BDX34B – BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are the BDX34A, BDX34B and BDX34C respectively. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDX33 BDX34 BDX33A BDX34A BDX33B BDX34B BDX33C BDX34C BDX33 BDX34 BDX33A BDX34A BDX33B BDX34B BDX33C BDX34C Value 45 60 Unit VCEO Collector-Emitter Voltage V 80 100 45 60 V 80 100 VCEV Collector-EmitterVoltage IB=0 COMSET SEMICONDUCTORS 1/6 NPN BDX33 – BDX33A – BDX33B – BDX33C PNP BDX34 – BDX34A – BDX34B – BDX34C Symbol Ratings BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B BDX34C BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B BDX34C BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B BDX34C BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B BDX34C BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B BDX34C Value Unit IC(RMS) 10 IC Collector Current A ICM 15 IB Base Current 0.25 A PT Power Dissipation @ TC = 25° 70 Watts W/°C TJ Junction Temperature -65 to +150 °C TS Storage Temperature COMSET SEMICONDUCTORS 2/6 NPN BDX33 – BDX33A – BDX33B – BDX33C PNP BDX34 – BDX34A – BDX34B – BDX34C THERMAL CHARACTERISTICS Symbol Ratings BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B BDX34C Value Unit RthJ-C Thermal Resistance, Junction to Case 1.78 °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) BDX33 BDX34 Min Typ Mx Unit 45 60 80 100 45 60 80 100 V V - VCEO(SUS) Collector-Emitter Breakdown Voltage (*) IC=100 mA BDX33A BDX34A BDX33B BDX34B BDX33C BDX34C BDX33 BDX34 VCER(SUS) Collector-Emitter Sustaining IB=100 mA, RBE=100Ω Voltage (*) BDX33A BDX34A BDX33B BDX34B BDX33C BDX34C COMSET SEMICONDUCTORS 3/6 NPN BDX33 – BDX33A – BDX33B – BDX33C PNP BDX34 – BDX34A – BDX34B – BDX34C Symbol Ratings Test Condition(s) BDX33 BDX34 Collector-Emitter Sustaining IC=100 mA, VBE=-1.5 V Voltage (*) BDX33A BDX34A BDX33B BDX34B BDX33C BDX34C BDX33 BDX34 BDX33A BDX34A BDX33B BDX34B BDX33C BDX34C BDX33 BDX34 BDX33A BDX34A BDX33B BDX34B BDX33C BDX34C BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B BDX34C BDX33 BDX34 BDX33A BDX34A BDX33B BDX34B BDX33C BDX34C Min Typ Mx Unit 45 60 80 100 0.5 mA 10 V - VCEV(SUS) VCB=22V TCASE=25°C VCB=30V VCB=40V VCB=50V VCB=22V ICEO Collector Cutoff Current TCASE=100°C VCB=30V VCB=40V VCB=50V IEBO Emitter Cutoff Current VBE=-5 V - - 5.0 mA VCBO=-45 V - 0.2 mA ICBO TCASE=25°C Collector-Base Cutoff Current VCBO=-60 V VCBO=-80 V VCBO=100 V COMSET SEMICONDUCTORS 4/6 NPN BDX33 – BDX33A – BDX33B – BDX33C PNP BDX34 – BDX34A – BDX34B – BDX34C Symbol Ratings Test Condition(s) BDX33 BDX34 BDX33A BDX34A BDX33B BDX34B BDX33C BDX34C BDX33 BDX33A BDX34 BDX34A BDX33B BDX33C BDX34B BDX34C BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B BDX34C BDX33 BDX33A BDX34 BDX34A BDX33B BDX33C BDX34B BDX34C BDX33 BDX33A BDX34 BDX34A BDX33B BDX33C BDX34B BDX34C Min Typ Mx Unit 5 mA VCBO=45 V TCASE=100°C ICBO Collector-Base Cutoff Current VCBO=60 V VCBO=80 V VCBO=100 V IC=4.0 A, IB=8.0 mA - - 2.5 V VCE(SAT) Collector-Emitter saturation Voltage (*) IC=3.0 A, IB=6.0 mA - - 2.5 VF Forward Voltage (pulse method) IF=8 A - - 4.0 V IC=4.0 A, VCE=3.0V - - 2.5 V VBE Base-Emitter Voltage (*) IC=3.0 A, VCE=3.0V - - 2.5 VCE=3.0 V, IC=4.0 A 750 - - hFE DC Current Gain (*) VCE=3.0 V, IC=3.0 A 750 - - (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit COMSET SEMICONDUCTORS 5/6 NPN BDX33 – BDX33A – BDX33B – BDX33C PNP BDX34 – BDX34A – BDX34B – BDX34C MECHANICAL DATA CASE TO-220 DIMENSIONS mm A B C D E F G H L M N P R S T U Pin 1 : Pin 2 : Pin 3 : 9,86 15,73 13,37 6,67 4,44 4,21 2,99 17,21 1,29 3,6 1,36 0,46 2,1 5 2,52 0,79 inches 0,39 0,62 0,52 0,26 0,17 0,16 0,11 0,68 0,05 0,14 0,05 0,02 0,08 0,19 0,098 0,03 base Collector emitter COMSET SEMICONDUCTORS 6/6