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BDX43

BDX43

  • 厂商:

    COMSET

  • 封装:

  • 描述:

    BDX43 - SILICON PLANAR DARLINGTON TRANSISTORS - Comset Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
BDX43 数据手册
NPN BDX42 – BDX43– BDX44 PNP BDX45 – BDX46 – BDX47 SILICON PLANAR DARLINGTON TRANSISTORS The BDX42, BDX43 and BDX44 are silicon NPN planar Darlington transistors and are mounted in Jedec TO-126 plastic package. They are intented for use in industrial switching applications. The complementary PNP types are the BDX45, BDX46 and BDX47 respectively. ABSOLUTE MAXIMUM RATINGS Symbol VCBO Collector-Base Voltage Ratings BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 Value 60 80 90 45 60 80 5 Unit V VCER Collector-EmitterVoltage V VEBO Emitter-Base Voltage V IC IC Collector Current ICM IB PT TJ TS Base Current Power Dissipation @ TC = 25° Junction Temperature Storage Temperature BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 1 A 2 0.1 A Watts 1.25 150 °C -65 to +150 COMSET SEMICONDUCTORS 1/3 NPN BDX42 – BDX43– BDX44 PNP BDX45 – BDX46 – BDX47 THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-mb Ratings BDX42 Thermal Resistance, Junction to Ambient BDX43 BDX44 BDX42 Thermal Resistance, Junction to BDX43 Mounting base BDX44 Value 100 Unit K/W 10 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICES IEBO Ratings Collector cut-off current Test Condition(s) VBE = 0 ; VCE = 45V VBE = 0 ; VCE = 60V VBE = 0 ; VCE = 80V IC =0 ; VEB = 4V Min Typ Mx Unit 1000 1000 1000 2000 2000 2000 Emitter cut-off current BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 BDX43 BDX42 BDX44 BDX42 BDX43 BDX44 BDX43 BDX42 BDX44 BDX42 BDX43 BDX44 BDX43 BDX42 BDX44 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 2/3 - 10 10 10 10 10 10 1.3 1.3 1.3 1.6 1.6 1.6 1.3 1.3 1.3 1.8 1.6 1.6 1.9 1.9 1.9 2.2 2.2 2.2 - µA µA IC=500 m A, IB=0.5 mA IC=1.0 A, IB=1.0 mA VCE(SAT) Collector-Emitter saturation Voltage (*) IC=1.0 A, IB=4.0 mA IC=500 m A, IB=0.5 mA Tj=150 °C IC=1.0 A, IB=1.0 mA Tj=150 °C IC=1.0 A, IB=4.0 mA Tj=150 °C IC=500 m A, IB=0.5 mA V VBE(SAT) Base-Emitter saturation Voltage (*) IC=1.0 A, IB=1.0 mA IC=1.0 A, IB=4.0 mA VCE=10 V, IC=150 mA V hFE DC Current Gain VCE=10 V, IC=500 mA - COMSET SEMICONDUCTORS NPN BDX42 – BDX43– BDX44 PNP BDX45 – BDX46 – BDX47 Symbol Ratings Test Condition(s) BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 Min Typ - Mx Unit - hfe ton toff ton toff Small Signal Current Gain VCE=5.0 V, IC=500 mA , f=35MHz Turn-on time IC=500 mA, IBon= -IBoff=0.5 mA Turn-off time Turn-on time IC=1 A, IBon= -IBoff=1.0 mA Turn-off time - 10 10 10 400 400 400 1500 1500 1500 400 400 400 1500 1500 1500 - ns ns MECHANICAL DATA CASE TO-126 DIMENSIONS mm min A B C D E F G H L M N P Pin 1 : Pin 2 : Case : max min 7.4 7.8 10.5 10.8 2.4 2.7 0.7 0.9 2.2 typ. 0.49 0.75 4.4 typ. 2.54 typ. 15.7 typ. 1.2 typ. 3.8 typ. 3.0 3.2 Emitter Collector Base inches max 0.295 0.307 0.413 0.425 0.094 0.106 0.027 0.035 0.087 typ. 0.019 0.029 0.173 typ. 0.100 typ. 0.618 typ. 0.047 typ. 0.149 typ. 0.118 0.126 COMSET SEMICONDUCTORS 3/3
BDX43
1. 物料型号: - NPN型:BDX42、BDX43、BDX44 - PNP型:BDX45、BDX46、BDX47

2. 器件简介: - 这些是硅NPN平面达林顿晶体管,用于工业开关应用。相应的PNP型号分别为BDX45、BDX46和BDX47。

3. 引脚分配: - Pin 1:发射极(Emitter) - Pin 2:集电极(Collector) - 外壳:基极(Base)

4. 参数特性: - 绝对最大额定值包括集-基电压(VCBO)、集-射电压(VCER)、发射极-基极电压(VEBO)、集电极电流(Ic)、基极电流(IB)和功耗(PT)。 - 热特性包括结到安装底的热阻(RthJ-a)和(RthJ-mb)。 - 电气特性包括集电极截止电流(ICES)、发射极截止电流(IEBO)、饱和集-射电压(VCE(SAT))、饱和基-发射电压(VBE(SAT))和直流电流增益(hFE)。

5. 功能详解: - 这些晶体管设计用于高电流和高电压的开关应用,具有高电流增益(hFE)和低饱和电压(VCE(SAT)),适合需要高效率和低功耗的场合。

6. 应用信息: - 适用于工业开关应用,特别是在需要高电流和高电压处理能力的场景中。

7. 封装信息: - 这些晶体管被封装在Jedec TO-126塑料封装中,具体尺寸和安装信息在文档中有详细描述。
BDX43 价格&库存

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