BDX45

PNP BDX45 – BDX46 – BDX47 NPN BDX42 – BDX43– BDX44 SILICON PLANAR DARLINGTON TRANSISTORS The BDX45, BDX46 and BDX47 are silicon PNP planar Darlington transistors and are mounted in Jedec TO-126 plastic package. They are intented for use in industrial switching applications. The complementary NPN types are the BDX42, BDX43 and BDX44 respectively. ABSOLUTE MAXIMUM RATINGS Symbol - VCBO Collector-Base Voltage Ratings BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 Value 60 80 90 45 60 80 5 Unit V - VCER Collector-EmitterVoltage V - VEBO Emitter-Base Voltage V - IC - IC Collector Current 1 A 2 - ICM - IB PT TJ TS Base Current 0.1 A Watts Power Dissipation @ TC = 25° 1.25 150 Junction Temperature °C -65 to +150 Storage Temperature COMSET SEMICONDUCTORS 1/3 PNP BDX45 – BDX46 – BDX47 NPN BDX42 – BDX43– BDX44 THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-mb Ratings BDX45 Thermal Resistance, Junction to Ambient BDX46 BDX47 BDX45 Thermal Resistance, Junction to BDX46 Mounting base BDX47 Value 100 Unit K/W 10 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol - ICES - IEBO Ratings Collector cut-off current Test Condition(s) VBE = 0 ; -VCE = 45V VBE = 0 ; -VCE = 60V VBE = 0 ; -VCE = 80V IC =0 ; VEB = 4V Min Typ Mx Unit 1000 1000 1000 2000 2000 2000 Emitter cut-off current BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 BDX46 BDX45 BDX47 BDX45 BDX46 BDX47 BDX46 BDX45 BDX47 BDX45 BDX46 BDX47 BDX46 BDX45 BDX47 BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 2/3 - 10 10 10 10 10 10 1.3 1.3 1.3 1.6 1.6 1.6 1.3 1.3 1.3 1.8 1.6 1.6 1.9 1.9 1.9 2.2 2.2 2.2 - µA µA -IC=500 mA, -IB=0.5 mA -IC=1.0 A, -IB=1.0 mA - VCE(SAT) Collector-Emitter saturation Voltage (*) -IC=1.0 A, -IB=4.0 mA -IC=500 mA, -IB=0.5 mA Tj=150 °C -IC=1.0 A, -IB=1.0 mA Tj=150 °C -IC=1.0 A, -IB=4.0 mA Tj=150 °C -IC=500 mA, -IB=0.5 mA V - VBE(SAT) Base-Emitter saturation Voltage (*) -IC=1.0 A, -IB=1.0 mA -IC=1.0 A, -IB=4.0 mA -VCE=10.0 V, -IC=150 mA V hFE DC Current Gain -VCE=10.0 V, -IC=500 mA - COMSET SEMICONDUCTORS PNP BDX45 – BDX46 – BDX47 NPN BDX42 – BDX43– BDX44 Symbol Ratings Test Condition(s) BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 -IC=500 mA, -IBon= IBoff=0.5 mA BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 -IC=1 A, -IBon= IBoff=1.0 mA BDX45 BDX46 BDX47 -VCE=5.0 V, -IC=500 mA , f=35MHz Min Typ - Mx Unit - hfe ton toff ton toff Small Signal Current Gain Turn-on time Turn-off time Turn-on time Turn-off time - 10 10 10 400 400 400 1500 1500 1500 400 400 400 1500 1500 1500 - ns ns MECHANICAL DATA CASE TO-126 DIMENSIONS mm min A B C D E F G H L M N P Pin 1 : Pin 2 : Case : max min 7.4 7.8 10.5 10.8 2.4 2.7 0.7 0.9 2.2 typ. 0.49 0.75 4.4 typ. 2.54 typ. 15.7 typ. 1.2 typ. 3.8 typ. 3.0 3.2 Emitter Collector Base inches max 0.295 0.307 0.413 0.425 0.094 0.106 0.027 0.035 0.087 typ. 0.019 0.029 0.173 typ. 0.100 typ. 0.618 typ. 0.047 typ. 0.149 typ. 0.118 0.126 COMSET SEMICONDUCTORS 3/3