BDX66A

BDX 66, A, B, C PNP SILICON DARLINGTONS High current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol -VCEO Collector-Emitter Voltage Ratings BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C Value 60 80 100 120 60 80 100 120 5.0 Unit V -VCBO Collector-Base Voltage V -VEBO Emitter-Base Voltage V -IC(RMS) -I C Collector Current 16 A 20 -ICM -I B Base Current 0.25 A PT Power Dissipation @ TC = 25° 150 Watts W/°C TJ TS Junction Temperature Storage Temperature -55 to +200 °C COMSET SEMICONDUCTORS 1/4 BDX 66, A, B, C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case BDX66 BDX66A BDX66B BDX66C Value 1.17 Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit BDX66 60 - - BDX66A 80 - V -VCEO(SUS) Collector-Emitter Breakdown Voltage (*) -IC=0.1 A, L=25mH BDX66B 100 - - BDX66C 120 - - -VCE=30 V BDX66 - - -VCE=40 V BDX66A - 3 mA -ICEO Collector Cutoff Current -VCE=50 V BDX66B - - -VCE=60 V BDX66C - - COMSET SEMICONDUCTORS 2/4 BDX 66, A, B, C M Unit x 5.0 mA Symbol Ratings Emitter Cutoff Current Test Condition(s) BDX66 BDX66A BDX66B BDX66C Min Typ -IEBO -VBE=5 V - - TCASE=25°C, -VCB=60 V BDX66 - 1 TCASE=200°C, -VCB=40 V - - 5 TCASE=25°C, -VCB=50 V BDX66A - 1 TCASE=200°C,-VCB=80 V - - 5 mA -ICBO Collector-Base Cutoff Current TCASE=25°C, -VCB=100 V BDX66B - 1 TCASE=200°C, -VCB=60 V - - 5 TCASE=25°C, -VCB=120 V BDX66C - 1 TCASE=200°C, -VCB=70 V 1000 BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A - 2000 1000 2 300 5 2 2,5 - hFE hFE hFE -VCE(SAT) -VBE VF C22b ton DC Current Gain DC Current Gain DC Current Gain Collector-Emitter saturation Voltage (*) Base-Emitter Voltage(1&2) Diode forward voltage -VCE=3 V,- IC=1 A -VCE=3 V,- IC=10 A -VCE=3 V,- IC=16 A -IC=10 A, -IB=40 mA - V V V pF -VCE=3 V, -IC=10 A IF=10 A IE=0 A, -VCB=-10V, f=1 MHz VCC=12V, -IC=10 A, -IB1= IB2=40 mA Switching characteristics - 1 - µs COMSET SEMICONDUCTORS 3/4 toff BDX66B BDX66C - 3.5 - BDX 66, A, B, C Symbol Ratings Test Condition(s) BDX66 BDX66A BDX66B BDX66C Min Typ Mx Unit fhfe -VCE=3 V,-IC=5 A - 60 - kHz (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Emitter Collector COMSET SEMICONDUCTORS 4/4