BDX67B

BDX67, A, B, C NPN SILICON DARLINGTONS High current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol VCEO Collector-Emitter Voltage Ratings BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C Value 60 80 100 120 80 100 120 140 5.0 Unit V VCBO Collector-Base Voltage V VEBO Emitter-Base Voltage V IC(RMS) IC Collector Current 16 A 20 ICM IB Base Current 0.25 A PT Power Dissipation @ TC = 25° 150 Watts W/°C TJ TS Junction Temperature Storage Temperature -55 to +200 °C BDX67, A, B, C COMSET SEMICONDUCTORS 1/4 BDX67, A, B, C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case BDX67 BDX67A BDX67B BDX67C Value 1.17 Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) BDX67 Min Typ Mx Unit 60 80 100 120 5.0 mA 3 mA V VCEO(SUS) Collector-Emitter Breakdown Voltage (*) IC=0.1 A, L=25mH BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C VCE=30 V ICEO Collector Cutoff Current VCE=40 V VCE=50 V VCE=60 V IEBO Emitter Cutoff Current VBE=5 V TCASE=25°C, VCB=60 V BDX67 BDX67A - - 1 5 mA 1 5 ICBO Collector-Base Cutoff Current TCASE=200°C, VCB=40 V TCASE=25°C, VCB=80 V TCASE=200°C, VCB=50 V COMSET SEMICONDUCTORS 2/4 BDX67, A, B, C Symbol Ratings Test Condition(s) Min - Typ 5200 4000 2,5 300 M Unit x 1 5 mA 1 5 2 2,5 - TCASE=25°C, VCB=100 V BDX67B ICBO Collector-Base Cutoff Current TCASE=200°C, VCB=60 V TCASE=25°C, VCB=120 V BDX67C 1000 BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C - TCASE=200°C, VCB=70 V hFE hFE hFE VCE(SAT) VBE VF Cc ton DC Current Gain DC Current Gain DC Current Gain Collector-Emitter saturation Voltage (*) Base-Emitter Voltage(1&2) Diode forward voltage VCE=3 V, IC=1 A VCE=3 V, IC=1 A VCE=3 V, IC=1 A IC=10 A, IB=40 mA V V V pF VCE=3 V, IC=10 A IF=10 A IE=0 A, VCB=10V - 1 3.5 µs - Switching characteristics VCC=12V, IC=-10 A, IB1=IB2=0.04 A toff - Fhfe VCE=-3 V, IC=-5 A - 50 - kHz (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit COMSET SEMICONDUCTORS 3/4 BDX67, A, B, C MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Emitter Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice COMSET SEMICONDUCTORS 4/4