BDX67, A, B, C NPN SILICON DARLINGTONS
High current power darlingtons designed for power amplification and switching applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
Collector-Emitter Voltage
Ratings
BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C
Value
60 80 100 120 80 100 120 140 5.0
Unit
V
VCBO
Collector-Base Voltage
V
VEBO
Emitter-Base Voltage
V
IC(RMS) IC
Collector Current
16
A
20
ICM
IB
Base Current
0.25
A
PT
Power Dissipation
@ TC = 25°
150
Watts W/°C
TJ TS
Junction Temperature Storage Temperature
-55 to +200
°C
BDX67, A, B, C
COMSET SEMICONDUCTORS 1/4
BDX67, A, B, C
THERMAL CHARACTERISTICS Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case BDX67 BDX67A BDX67B BDX67C
Value
1.17
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s) BDX67
Min Typ Mx Unit
60 80 100 120 5.0 mA 3 mA V
VCEO(SUS)
Collector-Emitter Breakdown Voltage (*)
IC=0.1 A, L=25mH
BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C
VCE=30 V
ICEO
Collector Cutoff Current
VCE=40 V VCE=50 V VCE=60 V
IEBO
Emitter Cutoff Current
VBE=5 V
TCASE=25°C, VCB=60 V
BDX67 BDX67A -
-
1 5 mA 1 5
ICBO
Collector-Base Cutoff Current
TCASE=200°C, VCB=40 V TCASE=25°C, VCB=80 V TCASE=200°C, VCB=50 V
COMSET SEMICONDUCTORS
2/4
BDX67, A, B, C
Symbol Ratings
Test Condition(s)
Min
-
Typ
5200 4000 2,5 300
M Unit x
1 5 mA 1 5 2 2,5 -
TCASE=25°C, VCB=100 V
BDX67B
ICBO
Collector-Base Cutoff Current
TCASE=200°C, VCB=60 V TCASE=25°C, VCB=120 V
BDX67C 1000 BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C -
TCASE=200°C, VCB=70 V
hFE hFE hFE VCE(SAT) VBE VF Cc ton
DC Current Gain DC Current Gain DC Current Gain Collector-Emitter saturation Voltage (*) Base-Emitter Voltage(1&2) Diode forward voltage
VCE=3 V, IC=1 A VCE=3 V, IC=1 A VCE=3 V, IC=1 A IC=10 A, IB=40 mA
V V V pF
VCE=3 V, IC=10 A IF=10 A IE=0 A, VCB=10V
-
1 3.5
µs -
Switching characteristics
VCC=12V, IC=-10 A, IB1=IB2=0.04 A
toff
-
Fhfe
VCE=-3 V, IC=-5 A
-
50
-
kHz
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit
COMSET SEMICONDUCTORS
3/4
BDX67, A, B, C
MECHANICAL DATA CASE TO-3
DIMENSIONS
A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Emitter Collector
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice
COMSET SEMICONDUCTORS
4/4