BDY26

COMSET SEMICONDUCTORS BDY26, 183 T2 BDY27, 184 T2 BDY28, 185 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC IB PTOT TJ TS Collector-Emitter Voltage Ratings BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 Value 180 200 250 300 400 500 10 6 3 Unit V V V A A Watts Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature @ TC = 25° 87.5 -65 to +200 °C Page 1 of 4 COMSET SEMICONDUCTORS BDY26, 183 T2 BDY27, 184 T2 BDY28, 185 T2 THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 Value 2 Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage (*) Collector-Emitter Cutoff Current Test Condition(s) BDY26, 183T2 BDY27, 184T2 BDY28A, 185T2A BDY28B, 185T2B BDY28C, 185T2C BDY26 BDY27 BDY28 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 Min Typ Mx Unit 180 200 250 250 220 1.0 VCEO(BR) IC=50 mA, IB=0 V ICEO VCE=180 V VCE=200 V VCE=250 V mA IEBO Emitter-Base Cutoff Current VEB=10 V VCE=250 V VBE=0 V 1.0 mA - 1.0 mA ICES Collector-Emitter Cutoff Current VCE=300 V VBE=0 V VCE=400 V VBE=0 V Page 2 of 4 COMSET SEMICONDUCTORS BDY26, 183 T2 BDY27, 184 T2 BDY28, 185 T2 Collector-Emitter saturation Voltage (*) IC=2.0 A, IB=0.25 A VCE(SAT) BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 A B C A B C BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 A B C 300 400 500 - - 0.6 1.2 45 90 180 - V V(BR)CBO Collector-Base Breakdown Voltage (*) IC=3 mA V VBE(SAT) Base-Emitter Voltage (*) IC=2.0 A, IB=0.25 A 55 65 90 20 45 82 - V VCE=4 V, IC=1 A h21E Static Forward Current transfer ratio (*) VCE=4 V, IC=2 A 15 30 75 10 - fT Transition Frequency VCE=15 V, IC=0.5 A, f=10 MHz MHz t d + tr Turn-on time IC=5 A, IB=1 A IC=5 A, IB1=1 A, IB2=-1 A - - 1 2 3.5 6 µs t s + tf Turn-off time - - µs (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% Page 3 of 4 COMSET SEMICONDUCTORS BDY26, 183 T2 BDY27, 184 T2 BDY28, 185 T2 MECHANICAL DATA DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,45 38,8 30,09 17,11 9,78 11,09 8,33 1,62 19,43 1 4,08 Base Emitter Collector Page 4 of 4