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BDY55

BDY55

  • 厂商:

    COMSET

  • 封装:

  • 描述:

    BDY55 - NPN SILICON TRANSISTORS, DIFFUSED MESA - Comset Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
BDY55 数据手册
NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC IB PTOT TJ TS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature @ TC = 25° Ratings BDY55 BDY56 BDY55 BDY56 BDY55 BDY56 BDY55 BDY56 BDY55 BDY56 BDY55 BDY56 BDY55 BDY56 BDY55 BDY56 Value 60 120 100 150 7 15 7 Unit V V V A A Watts 117 200 °C -65 to +200 THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case BDY55 BDY56 Value 1.5 Unit °C/W Page 1 of 3 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) Ratings Collector-Emitter Breakdown Voltage (*) Collector-Emitter Cutoff Current Test Condition(s) IC = 200 mA, IB = 0 Min Typ Mx Unit 60 120 0.7 mA 0.5 5 mA 3 5 30 mA 3 30 V BDY55 BDY56 BDY55 BDY56 BDY55 VCE = 30 V VCE = 60 V - ICEO IEBO Emitter-Base Cutoff Current VEB = 7 V BDY56 VCE = 100 V VBE = -1.5 V VCE = 100 V VBE = -1.5 V TCASE = 150°C VCE = 150 V VBE = -1.5 V VCE = 150 V VBE = -1.5 V TCASE = 150°C BDY55 - ICEX Collector-Emitter Cutoff Current BDY56 - VCE(SAT) Collector-Emitter saturation Voltage (*) Collector-Emitter saturation Voltage (*) Base-Emitter Voltage (*) Static Forward Current transfer ratio (*) Transition Frequency Turn-on time Turn-off time IC = 4.0 A, IB = 0.4 A IC = 10 A, IB = 3.3 A VCE(SAT) VBE HFE fT t d + tr t s + tf IC = 10 A, IB = 3.3 A IC = 4.0 A, VCE = 4.0 V VCE = 4 V, IC = 4 A VCE = 4 V, IC =10 A VCE = 4.0 V, IC = 1.0 A, f = 10 MHz I C = 5 A , IB = 1 A I C = 5 A, IB1 = 1 A, IB2 = -0.5 A BDY55 BDY56 BDY55 BDY56 BDY55 BDY56 BDY55 BDY56 BDY55 BDY56 BDY55 BDY56 BDY55 BDY56 BDY55 BDY56 BDY55 BDY56 20 10 10 - - 1.1 V 2.5 2.5 1.8 70 V V - 0.5 2 MHz µs µs (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% Page 2 of 3 MECHANICAL DATA CASE TO-3 DIMENSIONS (mm) min A B C D F G N P R U V Pin 1 : Pin 2 : Case : 11 0.97 1.5 8.32 19 10.70 16.50 25 4 38.50 30 typ max 13.10 1.15 1.65 8.92 20 11.1 17.20 26 4.09 39.30 30.30 Base Emitter Collector Page 3 of 3
BDY55
1. 物料型号: - BDY55/BDY56

2. 器件简介: - 该器件是一款大信号功率放大器,具有高电流、快速开关的特性,并且符合RoHS标准。

3. 引脚分配: - Pin1: Base(基极) - Pin2: Emitter(发射极) - Case: Collector(集电极)

4. 参数特性: - 绝对最大额定值: - VCEO(集电极-发射极电压):BDY55为120V,BDY56为60V - VCBO(集电极-基极电压):BDY55为100V,BDY56为150V - VEBO(发射极-基极电压):BDY55和BDY56均为7V - IC(集电极电流):BDY55和BDY56均为15A - IB(基极电流):BDY55和BDY56均为7A - PTOT(总功耗):BDY55和BDY56均为117W - TJ(结温):BDY55和BDY56均为200°C - TS(储存温度):BDY55为-65至+200°C,BDY56为-65至+150°C - 热特性: - RthJ-C(结到外壳的热阻):BDY55和BDY56均为1.5°C/W

5. 功能详解: - 电气特性(TC=25°除非另有说明): - VCEO(SUS)(击穿电压):BDY55为60V,BDY56为120V - ICEO(集电极-发射极截止电流):BDY55为0.7mA,BDY56为0.5mA - IEBO(发射极-基极截止电流):BDY55为5mA,BDY56为3mA - ICEx(集电极-发射极截止电流):BDY55为5mA至30mA,BDY56为3mA至30mA - VCE(SAT)(饱和压降):BDY55和BDY56在不同条件下为1.1V至2.5V - VBE(基极-发射极电压):BDY55和BDY56在不同条件下为1.8V - HFE(静态正向电流传输比):BDY55和BDY56在不同条件下为10至70 - fr(转换频率):BDY55和BDY56为10MHz - ta+tr(开通时间):BDY55和BDY56为0.5us - ts+tf(关断时间):BDY55和BDY56为2us

6. 应用信息: - 该晶体管适用于需要大信号功率放大和高电流快速开关的应用场合。

7. 封装信息: - 封装类型为TO-3,具体的尺寸参数已在文档中以表格形式列出。
BDY55 价格&库存

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