BU911

NPN BU911 HIGH VOLTAGE POWER DARLINGTON The BU911 are high voltage, silicon NPN transistors in monolithic Darlington mounted in Jedec TO-220 plastic package. They are designed for applications such as electronic ignition, DC and AD motor controls, solenoid drivers, etc. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCES VEBO IC IB PD TJ TStg Ratings Collector-Emitter Voltage Collector-Emitter Voltage (VBE=0) Emitter-Base Voltage Collector Current Base Current Total Device Dissipation Junction Temperature Storage Temperature range Value 400 450 5 6 10 1 60 150 -65 to +150 Unit V V V A A A Watts °C °C IC ICM @ TC = 25° THERMAL CHARACTERISTICS Symbol RthJ-c Ratings Thermal Resistance, Junction to case Value 70 Unit K/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICEO ICES IEBO VCEO(sus) Ratings Collector Cutoff Current Collector Cutoff Current Test Condition(s) VCE=400 V, IB=0V VCE=450 V, VBE=0 VCE=450 V, VBE=0, TC=125°C VBE=5.0 V, IC=0 Min Typ Mx Unit 400 1 1 5 5 mA mA mA V Emitter Cutoff Current Collector- Emitter sustaining IC=100 mA Voltage (1) COMSET SEMICONDUCTORS 1/2 NPN BU911 Symbol VF VCE(SAT) Ratings Didode forward Voltage Collector-Emitter saturation Voltage (1) Base-Emitter saturation Voltage (1) IF=4 A Test Condition(s) IC=2.5 A, IB=50 mA IC=4 A, IB=200 mA IC=2.5 A, IB=50 mA IC=4 A, IB=200 mA Min Typ Mx Unit 2.5 1.8 1.8 2.2 2.5 V V VBE(SAT) V (1) Pulse conditions : tp < 300 µs, duty cycle =1.5% NPN BU911 MECHANICAL DATA CASE TO-220 DIMENSIONS mm A B C D E F G H L M N P R S T U Pin 1 : Pin 2 : Pin 3 : 9,86 15,73 13,37 6,67 4,44 4,21 2,99 17,21 1,29 3,6 1,36 0,46 2,1 5 2,52 0,79 inches 0,39 0,62 0,52 0,26 0,17 0,16 0,11 0,68 0,05 0,14 0,05 0,02 0,08 0,19 0,098 0,03 base Collector emitter Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 2/2