BUR52 HIGH CURRENT NPN SILICON TRANSISTORS
LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
The BUR52 is a silicon multiepitaxial planar NPN transistor in modified jedec TO-3 metal case, Intented for use in switching and linear applications in military and industrial equipment. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO VCBO VEBO
Ratings
Collector-Emitter Voltage (IB = 0)
Value
250 350 10
Unit
V V V
Collector-Base Voltage (IE = 0)
Emitter-Base Voltage (IC = 0)
IC IC
Collector Current
60
A ICM tp = (10 ms)
80
COMSET SEMICONDUCTORS
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BUR52
Symbol
IB PT TJ TS
Ratings
Base Current Power Dissipation @ TC = 25°
Value
Unit
16
A Watts
350 200
Junction Temperature
Storage Temperature
°C -55 to +200
THERMAL CHARACTERISTICS Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case
Value
0.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICEO IEBO ICBO VCEO(SUS) VEBO VCE(SAT)
Ratings
Collector Cutoff Current Emitter Cutoff Current Collector Cutoff Current
Test Condition(s)
Min Typ Mx Unit
250 10 0.7 1.5 1 0.2 0.2 mA 2 1 V 1.5 1.8 V 2 V V mA µA
VCE = 250 V ; (IB = 0) VBE = 7 V ; (IC = 0) TCASE = 25°C ; VCB = 350 V ; (IE = 0) TCASE = 125°C ; VC = 350 V ; (IE = 0)
Collector-Emitter Sustaining IC = 200 A Voltage (*) Emitter-Base Voltage Collector-Emitter saturation Voltage (*) Base-Emitter saturation Voltage (*)
IC = 10 mA ; (IC = 0) IC = 25 A ; IB = 2 A IC = 40 A ; IB = 4 A IC = 25 A ; IB = 2 A IC = 40 A ; IB = 4 A
VBE(SAT)
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BUR52
Symbol Ratings
Test Condition(s)
Min Typ Mx Unit
20 15 17.5 -
VCE = 4 V ; IC = 5 A
10 0.3 1.2 0.2 -
100 16 1 2 µs 0.6 A A MHz µs
hFE Is/b fT ton ts ff
DC Current Gain (*)
VCE = 4 V ; IC = 40 A
Second Breakdown Collector Current Transition - Frequency Turn-on time Storage Time Fall Time Clamped Es/b Collector Current
VCE = 20 V ; t = 1 s VCE = 5 V ; IC = 1 A ; f = 1 MHz VCC = 100 V ; IC = 40 A ; IB1 = 4 A
VCC = 100 V ; IC = 40 A IB1= 4 A ; IB2 = -4 A
Vclamp = 250 V ; L = 500 µH
40
(*) Pulse duration = 300 µs, Duty Cycle ∠ 1.5 %
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BUR52
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice
COMSET SEMICONDUCTORS
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