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BUR52

BUR52

  • 厂商:

    COMSET

  • 封装:

  • 描述:

    BUR52 - HIGH CURRENT NPN SILICON TRANSISTORS - Comset Semiconductor

  • 数据手册
  • 价格&库存
BUR52 数据手册
BUR52 HIGH CURRENT NPN SILICON TRANSISTORS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT The BUR52 is a silicon multiepitaxial planar NPN transistor in modified jedec TO-3 metal case, Intented for use in switching and linear applications in military and industrial equipment. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO Ratings Collector-Emitter Voltage (IB = 0) Value 250 350 10 Unit V V V Collector-Base Voltage (IE = 0) Emitter-Base Voltage (IC = 0) IC IC Collector Current 60 A ICM tp = (10 ms) 80 COMSET SEMICONDUCTORS 1/4 BUR52 Symbol IB PT TJ TS Ratings Base Current Power Dissipation @ TC = 25° Value Unit 16 A Watts 350 200 Junction Temperature Storage Temperature °C -55 to +200 THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value 0.5 Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICEO IEBO ICBO VCEO(SUS) VEBO VCE(SAT) Ratings Collector Cutoff Current Emitter Cutoff Current Collector Cutoff Current Test Condition(s) Min Typ Mx Unit 250 10 0.7 1.5 1 0.2 0.2 mA 2 1 V 1.5 1.8 V 2 V V mA µA VCE = 250 V ; (IB = 0) VBE = 7 V ; (IC = 0) TCASE = 25°C ; VCB = 350 V ; (IE = 0) TCASE = 125°C ; VC = 350 V ; (IE = 0) Collector-Emitter Sustaining IC = 200 A Voltage (*) Emitter-Base Voltage Collector-Emitter saturation Voltage (*) Base-Emitter saturation Voltage (*) IC = 10 mA ; (IC = 0) IC = 25 A ; IB = 2 A IC = 40 A ; IB = 4 A IC = 25 A ; IB = 2 A IC = 40 A ; IB = 4 A VBE(SAT) COMSET SEMICONDUCTORS 2/4 BUR52 Symbol Ratings Test Condition(s) Min Typ Mx Unit 20 15 17.5 - VCE = 4 V ; IC = 5 A 10 0.3 1.2 0.2 - 100 16 1 2 µs 0.6 A A MHz µs hFE Is/b fT ton ts ff DC Current Gain (*) VCE = 4 V ; IC = 40 A Second Breakdown Collector Current Transition - Frequency Turn-on time Storage Time Fall Time Clamped Es/b Collector Current VCE = 20 V ; t = 1 s VCE = 5 V ; IC = 1 A ; f = 1 MHz VCC = 100 V ; IC = 40 A ; IB1 = 4 A VCC = 100 V ; IC = 40 A IB1= 4 A ; IB2 = -4 A Vclamp = 250 V ; L = 500 µH 40 (*) Pulse duration = 300 µs, Duty Cycle ∠ 1.5 % COMSET SEMICONDUCTORS 3/4 BUR52 Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice COMSET SEMICONDUCTORS 4/4
BUR52 价格&库存

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