BUX12

NPN BUX12 HIGH CURRENT, HIGH SPEED , HIGH POWER TRANSISTOR The BUX12 is silicon multiepitaxial planar NPN transistors in Jedec TO-3. They are intended for use in switching and linear appications in military and industrial equipment. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO VCEX IC ICM IB Pt TJ TStg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current Collector Peak Current Base Current Total Power Dissipation Junction Temperature Storage Temperature Ratings IB = 0 IE = 0 IC = 0 VBE = -1.5V tp = 10ms @ TC = 25° Value 250 300 7.0 300 20 25 4 150 200 -65 to +200 Unit V V V V A A A Watts °C °C THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case Value 1.17 Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) VEB0(SUS) ICEO ICEX IEBO Ratings Collector-Emitter Sustaining Voltage (1) Emitter-Base Breakdown Voltage (1) Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current IC=200 mA Test Condition(s) Min Typ Mx Unit 250 7 1.5 1.5 6 1 V V mA mA mA IC=0A , IE=50 mA VCE=200 V , IB=0A VCE= VCEX , VBE= -1.5V VCE= VCEX , VBE= -1.5V, Tcase = 125°C VEB=5.0 V, IC=0 COMSET SEMICONDUCTORS 1/2 NPN BUX12 hFE VCE(SAT) VBE(SAT) DC Current Gain (1) Collector-Emitter saturation Voltage (1) Base-Emitter saturation Voltage (1) IC=5 A , VCE=4.0 V IC=10 A , VCE=4.0 V IC=5 A , IB=0.5 A IC=10 A , IB=1.25 A IC=10 A , IB=1.25 A 20 10 - 0.22 0.5 1.23 60 1 1.5 1.5 - V Symbol IS/B ES/B fT ton ts tf Ratings Second breakdown collector current Clamped ES/B Collector current Transition frequency Turn-on time Storage time File time Test Condition(s)Sec VCE=30 V , ts = 1s VCE=140 V , ts = 1s Vclamp=250 V , L=500 µH VCE=15 V , IC=1 A , f=10 MHz IC=10 A , IB=1.25 A , VCC=150 V Min Typ Mx Unit 5 0.15 10 8 0.28 1.45 0.23 1 2 0.5 µs A A MHz IC=10 A , VCC=150 V IB1 = -IB2 =1.25 A (1) Pulse Duration = 300 µs, Duty Cycle