BUX39

NPN BUX39 HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR The BUX39 is silicon multiepitaxial planar NPN transistor in Jedec TO-3. They are intended for use in switching and linear applications in military and industrial equipment. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO VCEX IC ICM IB Pt TJ TStg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current Collector Peak Current Base Current Total Power Dissipation Junction Temperature Storage Temperature Ratings IB = 0 IE = 0 IC = 0 VBE = -1.5V tp = 10ms @ TC = 25° Value 90 120 7 120 30 40 6 120 200 -65 to +200 Unit V V V V A A A Watts °C °C THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case Value 1.46 Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) VEB0 ICEO ICEX IEBO Ratings Collector-Emitter Sustaining Voltage (1) Emitter-Base Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current IC=200 mA Test Condition(s) Min Typ Mx Unit 90 7 1 1 5 1 V V mA mA mA IC=0A , IE=50 mA VCE=70 V , IB=0A VCE= VCEX , VBE= -1.5V VCE= VCEX , VBE= -1.5V, Tcase = 125°C VEB=5.0 V, IC=0 COMSET SEMICONDUCTORS 1/2 NPN BUX39 hFE VCE(SAT) VBE(SAT) DC Current Gain (1) Collector-Emitter saturation Voltage (1) Base-Emitter saturation Voltage (1) IC=12 A , VCE=4.0 V IC=20 A , VCE=4.0 V IC=12 A , IB=1.2 A IC=20 A , IB=2.5 A IC=20 A , IB=2.5 A 15 8 - 0.7 1.25 2.1 45 1.2 1.6 2.5 - V Symbol IS/B fT ton ts tf Ratings Test Condition(s)Sec Min Typ Mx Unit 4 1 8 0.8 0.55 .15 1.2 1 0.25 µs A MHz Second breakdown collector VCE=30 V , ts = 1s current VCE=135 V , ts = 1s VCE=15 V , IC=1 A , f=4 MHz Transition frequency Turn-on time Storage time File time IC=8 A , IB=1 A , VCC=150 V IC=8 A , VCC=150 V IB1 = -IB2 =1 A (1) Pulse Duration = 300 µs, Duty Cycle