BUX41

NPN BUX41 HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR The BUX41 is silicon multiepitaxial planar NPN transistor in Jedec TO-3. They are intended for use in switching and linear applications in military and industrial equipment. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO VCEX IC ICM IB Pt TJ TStg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current Collector Peak Current Base Current Total Power Dissipation Junction Temperature Storage Temperature Ratings IB = 0 IE = 0 IC = 0 VBE = -1.5V tp = 10ms @ TC = 25° Value 200 250 7 250 15 20 3 120 200 -65 to +200 Unit V V V V A A A Watts °C °C THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case Value 1.46 Unit °C/W COMSET SEMICONDUCTORS 1/3 NPN BUX41 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) VEB0 ICEO ICEX IEBO hFE VCE(SAT) VBE(SAT) IS/B ES/B fT ton ts tf Ratings Collector-Emitter Sustaining Voltage (1) Emitter-Base Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain (1) Collector-Emitter saturation Voltage (1) Base-Emitter saturation Voltage (1) Second breakdown collector current Clamped ES/B Collector current Transition frequency Turn-on time Storage time File time Test Condition(s) IC=200 mA IC=0A , IE=50 mA VCE=160 V , IB=0A VCE= VCEX , VBE= -1.5V VCE= VCEX , VBE= -1.5V, Tcase = 125°C VEB=5.0 V, IC=0 IC=5 A , VCE=4.0 V IC=8 A , VCE=4.0 V IC=5 A , IB=0.5 A IC=8 A , IB=1 A IC=8 A , IB=1 A VCE=30 V , ts = 1s VCE=135 V , ts = 1s Vclamp=200 V , L=500 µH VCE=15 V , IC=1 A , f=10 MHz IC=8 A , IB=1 A , VCC=150 V Min Typ Mx Unit 200 7 15 8 4 0.15 8 8 0.38 0.6 1.35 0.28 1.2 0.25 1 1 5 1 45 1.2 1.6 2 1.0 1.7 0.8 µs A A MHz V V mA mA mA - V IC=8 A , VCC=150 V IB1 = -IB2 =1 A (1) Pulse Duration = 300 µs, Duty Cycle