BUX48

NPN BUX48 VERY HIGH VOLTAGE POWER TRANSISTOR The BUX48 is silicon multiepitaxial mesa NPN transistors in Jedec TO-3. They are a high voltage, high speed and they are intended for use in converters, inverter, switching regulator, motor control systems. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCESM VEBO IC ICM IB IBM Pt TJ TStg Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Base Current-Peak Value Total Power Dissipation Junction Temperature Storage Temperature Ratings IB = 0 VBE = 0 IC = 0 Value 400 850 7.0 15 30 4 20 175 200 -65 to +200 Unit V V V A A A A Watts °C °C @ TC = 25° THERMAL CHARACTERISTICS Symbol RthJ-mb Ratings Thermal Resistance, Junction to Mounting Base Value 1.0 Unit K/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) VEB0(SUS) ICER IEBO * Ratings Collector-Emitter Sustaining Voltage (1) Emitter-Base Breakdown Voltage (1) Collector Cutoff Current Emitter Cutoff Current Test Condition(s) IC=200 mA , L=25 mH IC=0A , IB=50 mA VCE= VCESM= 850 V , RBE= 10 Ω VCE= VCESM= 850 V , RBE= 10 Ω,Tj =125°C VEB=5.0 V, IC=0 Min Typ Mx Unit 400 7 30 0.5 4 1 1/2 V V mA mA COMSET SEMICONDUCTORS NPN BUX48 VCE(SAT) VBE(SAT) Collector-Emitter saturation Voltage (1) Base-Emitter saturation Voltage (1) IC=10 A , IB=2 A IC=15 A , IB=3 A IC=10 A , IB=2 A - 1.5 5 1.6 V (1) Pulse Duration = 300 µs, Duty Cycle