NPN BUX80
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
The BUX80 is silicon multiepitaxial planar NPN transistor in Jedec TO-3. They are intended for use in converters, inverters, switching regulators and motor control systems applications.
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCER VEBO VCES IC ICM IB Pt TJ TStg
Collector-Emitter Voltage Collector- Emitter Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current Collector Peak Current Base Current Total Power Dissipation Junction Temperature Storage Temperature
Ratings
IB = 0 RBE = 50Ω IC = 0 VBE = 0 tp = 10ms @ TC = 40°
Value
400 500 10 800 10 15 5 100 150 -65 to +150
Unit
V V V V A A A Watts °C °C
THERMAL CHARACTERISTICS Symbol
RthJC
Ratings Thermal Resistance, Junction to Case
Value
1.1
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO(SUS) VCER IEBO ICES
Ratings
Collector-Emitter Sustaining Voltage (1) Collector-Emitter Sustaining Voltage (1) Emitter Cutoff Current Collector Cutoff Current
IC=100 mA
Test Condition(s)
Min Typ Mx Unit
400 500 10 1 3 V V mA mA
IC=100 mA , RBE = 50Ω VCE=10 V , IC=0 VCE= VCES , VBE= 0 VCE= VCES , VBE= 0, Tcase = 125°C
COMSET SEMICONDUCTORS
1/2
NPN BUX80
hFE VCE(SAT) VBE(SAT)
DC Current Gain (1) Collector-Emitter saturation Voltage (1) Base-Emitter saturation Voltage (1)
IC=1.2 A , VCE=5.0 V IC=5 A , IB=1 A IC=8 A , IB=2.5 A IC=5 A , IB=1 A IC=8 A , IB=2.5 A
-
30 -
1.5 3 1.4 1.8
V
Symbol
ton ts tf
Ratings
Turn-on time Storage time File time
Test Condition(s)Sec
IC=5 A , IB=1 A , VCC=250 V IC=5 A , VCC=250 V IB1 =1A , -IB2 =2 A IC=5 A , VCC=-250 V IB1 =1A , -IB2 =2 A
Min Typ Mx Unit
0.5 3.5 0.5 µs
(1) Pulse Duration = 300 µs, Duty Cycle
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