C430CB230-S0100

SuperBlue™ LEDs C430CB230-S000 Cree’s low-current SuperBlue LEDs combine highly efficient GaN with Cree’s proprietary G•SiC® substrate to deliver the ultimate price/performance for blue LEDs. The C430CB230-S0100 is designed for use in backlighting and display applications. Cree’s CB chips are sorted onto tape and compatible with most radial and SMT LED assembly processes. FEATURES • High Performance – • • 650 μW (465 nm) APPLICATIONS • • Segmented Displays High-Resolution Video Displays Single Wire Bond Structure Class 2 ESD Rating C430CB230-S000 Chip Diagram Top View G•SiC LED Chip 200 x 200 μm Mesa (junction) 176 x 176 μm Gold Bond Pad 112 μm Diameter Bottom View Die Cross Section Anode (+) H PR3AB, Rev. Datasheet: C SiC Substrate t = 250 μm Backside Metallization Cathode (-) Subject to change without notice. www.cree.com  Maximum Ratings at TA = 25°C Notes &3 DC Forward Current Peak Forward Current (1/10 duty cycle @ 1kHz) LED Junction Temperature Reverse Voltage Operating Temperature Range Storage Temperature Range Electrostatic Discharge Threshold (HBM) Note 2 C430CB230-S000 15 mA 35 mA 125°C 5V -40°C to +100°C -40°C to +100°C 1000 V Class 2 Note 3 Electrostatic Discharge Classification (MIL-STD-883E)Note 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 0 mA Part Number Forward Voltage (Vf, V) Typ. C430CB230-S0100 4.0 Max. 4.5 Radiant Flux (P, μW) Min. 425 Typ. 650 Reverse Current [I(Vr=5V), μA] Max. 10 Flux (mlm) Typ. 40 Peak Wavelength (λd, nm) Typ. 428 Dominant Wavelength (λd, nm) Min. 462 Typ. 465 Max. 466 Full Width Half Max (λD, nm) Typ. 60 Mechanical Specifications Description P-N Junction Area (μm) Top Area (μm) Bottom Area (μm) Chip Thickness (μm) Au Bond Pad Diameter (μm) Au Bond Pad Thickness (μm) Back Contact Metal Area (μm) C430CB230-S000 Dimension 176 x 176 200 x 200 200 x 200 250 112 1.2 20 Tolerance ± 25 ± 25 ± 25 ± 25 ± 20 ± 0.5 ± 10 Notes: 1. 2. 3. 4. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (