C470UT200-SXXXX

Cree® UltraThin™ LED Data Sheet CxxxUT200-Sxxxx Cree’s UltraThin LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low forward voltage. Cree’s UT™ series chips are tested for conformity to optical and electrical specifications and the ability to withstand 1000 V ESD. Applications include keypad backlighting where sub-miniaturization and thinner form factors are required. FEATURES • • Small Chip – 200 x 200 x 85 μm UT LED Performance – • 5.5 mW min. (455–475 nm) Blue APPLICATIONS • • • • Mobile Phone Keypads Audio Product Display Lighting Mobile Appliance Keypads Automotive Applications Low Forward Voltage – 2.9 V Typical at 5 mA • • Single Wire Bond Structure Class 2 ESD Rating CxxxUT200-Sxxxx Chip Diagram Top View G•SiC LED Chip 200 x 200 μm Mesa (junction) 150 x 150 μm Gold Bond Pad 90 μm Diameter Bottom View SiC Substrate Bottom Surface 115 x 115 μm SiC Substrate h = 85 μm Backside Metallization 80 x 80 μm Die Cross Section InGaN Anode (+) .CPR3DE Rev Data Sheet: Cathode (-) Subject to change without notice. www.cree.com  Maximum Ratings at TA = 25°C Notes &3 DC Forward Current Peak Forward Current (1/10 duty cycle @ 1 kHz) LED Junction Temperature Reverse Voltage Operating Temperature Range Storage Temperature Range Electrostatic Discharge Threshold (HBM) Note 2 Note 2 CxxxUT200-Sxxxx 30 mA 100 mA 125°C 5V -40°C to +100°C -40°C to +100°C 1000 V Class 2 Note 3 Electrostatic Discharge Classification (MIL-STD-883E) Typical Electrical/Optical Characteristics at TA = 25°C, If = 5 mA Part Number Forward Voltage (Vf, V) Min. C460UT200-Sxxxx C470UT200-Sxxxx Mechanical Specifications Description P-N Junction Area (μm) Top Area (μm) Bottom Area (Substrate) (μm) Chip Thickness (μm) Au Bond Pad Diameter (μm) Au Bond Pad Thickness (μm) Back Contact Metal Area (μm) 2.7 2.7 Typ. 2.9 2.9 Max. 3.1 3.1 Reverse Current [I(Vr=5 V), μA] Max. 2 2 Full Width Half Max (λD, nm) Typ. 21 22 CxxxUT200-Sxxxx Dimension 150 x 150 200 x 200 115 x 115 85 90 1.2 80 x 80 Tolerance ± 25 ± 25 ± 25 ± 10 -5, +15 ± 0.5 ± 25 Notes: 1. 2. 3. 4. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the minimum ESD ratings shown. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 5 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an integrating sphere using Illuminance E. Caution: To obtain optimum output efficiency, the amount of epoxy used should be characterized based upon the specific application. Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com 2 CPR3DE Rev. - Standard Bins for CxxxUT200-Sxxxx LED chips are sorted to the radiant flux and dominant wavelength bins shown. Sorted die sheets contain die from only one bin. Sorted die kit (CxxxUT200-Sxxxx) orders may be filled with any or all bins (CxxxUT200-xxxx) contained in the kit. All radiant flux values are measured at If = 20 mA and all dominant wavelength values are measured at If = 5 mA. UT-5.5 C460UT200-S0550 Radiant Flux 8.0 mW 5.5 mW 455 nm C460UT200-0201 C460UT200-0202 C460UT200-0203 C460UT200-0204 457.5 nm 460 nm Dominant Wavelength 462.5 nm 465 nm C470UT200-S0550 Radiant Flux 8.0 mW 5.5 mW 465 nm C470UT200-0201 C470UT200-0202 C470UT200-0203 C470UT200-0204 467.5 nm 470 nm Dominant Wavelength 472.5 nm 475 nm UT-8.0 C460UT200-S0800 Radiant Flux 8.0 mW 455 nm C460UT200-0205 C460UT200-0206 C460UT200-0207 C460UT200-0208 457.5 nm 460 nm Dominant Wavelength 462.5 nm 465 nm C470UT200-S0800 Radiant Flux 8.0 mW 465 nm C470UT200-0205 C470UT200-0206 C470UT200-0207 C470UT200-0208 467.5 nm 470 nm Dominant Wavelength 472.5 nm 475 nm Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com 3 CPR3DE Rev. - Characteristic Curves These are representative measurements for the UT200 product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Forward Current vs Forward Voltage 30 25 Wavelength Shift vs Forward Current 8.0 4.0 20 15 10 5 0 0.0 1.0 2.0 Vf (V) 3.0 4.0 5.0 Shift (nm) If (mA) 0.0 -4.0 -8.0 0 5 10 15 If (mA) 20 25 30 Relative Intensity vs Forward Current 450 Relative Intensity (%) 0 5 10 15 If (mA) 20 25 30 400 % Relative Intensity 350 300 250 200 150 100 50 0 Relative Intensity vs. Peak Wavelength 100% 80% 60% 40% 20% 0% 320 360 400 440 480 520 560 600 640 680 Wavelength (nm) Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com 4 CPR3DE Rev. - Radiation Pattern This is a representative radiation pattern for the UltraThin Chip LED product. Actual patterns will vary slightly for each chip. Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com 5 CPR3DE Rev. -