C505XB500-S2000-A

XBright® Power Chip LED CxxxXB500-Sxx00-A Cree’s XB™ power chip series of LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and require only a single wire bond connection. These LEDs are useful in a broad range of applications such as outdoor full-motion LED video signs, automotive lighting and white LEDs. Cree’s XB power chips are compatible with optical power packages that employ proper thermal management. FEATURES • • • XBright LED Technology Larger “Power Chip” Design High Performance – – – – • • 35 mW min. (460 nm) Blue 30 mW min. (470 nm) Blue 20 mW min. (505 nm) Traffic Green 15 mW min. (527 nm) Green APPLICATIONS • General Illumination – – – – – • • • Automobile Aircraft Decorative Lighting Task Lighting Outdoor Illumination White LEDs Crosswalk Signals Backlighting Single Wire Bond Structure AuSn Backside Metal CxxxXB500-Sxx00-A Chip Diagram Top View G•SiC LED Chip 500 x 500 μm Bottom View Die Cross Section A PR3CS, Rev. Datasheet: C 376 μm Contact Metal Cathode (-) Bond Pad 120 μm Diameter SiC Substrate h = 250 μm Anode (+) InGaN Subject to change without notice. www.cree.com  Maximum Ratings at TA = 5°C Note  DC Forward Current Peak Forward Current (1/10 duty cycle @ 1kHz) LED Junction Temperature Reverse Voltage Operating Temperature Range Storage Temperature Range Electrostatic Discharge Threshold (HBM)Note 3 Electrostatic Discharge Classification (MIL-STD-883E)Note 3 Typical Electrical/Optical Characteristics at TA = 5°C, If = 5mA Part Number Forward Voltage (Vf, V) Min. C460XB500-S3500-A C470XB500-S3000-A C505XB500-S2000-A C527XB500-S1500-A Mechanical Specifications Description P-N Junction Area (μm) Top Area (μm) Bottom Area (μm) Chip Thickness (μm) Au Bond Pad Diameter (μm) Au Bond Pad Thickness (μm) Back Contact Metal Area (μm) Back Contact Metal Options/Thickness (μm) 3.0 3.0 3.0 3.0 Typ. 3.5 3.5 3.5 3.5 Max. 4.0 4.0 4.0 4.0 Note  CxxxXB500-Sxx00-A 150mANote 2 200mA 125°C 5V -40°C to +85°C -40°C to +100°C 1000V Class 2 Reverse Current [I(Vr=5V), μA] Max. 2 2 2 2 Full Width Half Max (λD, nm) Typ. 21 22 30 35 CxxxXB500-S000-A Dimension 448 x 448 325 x 325 500 x 500 250 120 1.2 376 x 376 1.7 Tolerance ± 25 ± 25 ± 50 ± 25 ± 10 ± 0.5 ± 25 ± 0.3 Notes: 1. 2. 3. 4. 5. 6. 7. Maximum ratings are package dependent. The above ratings were determined using a Au-plated TO39 header without an encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 125 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average expected by manufacturer in large quantities and are provided for information only. All measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics measured in an integrating sphere using Illuminance E. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E. Back contact metal is 80%/20% Au/Sn by weight, with target eutectic melting temperature of approximately 282°C. Caution: To avoid leakage currents and achieve maximum output efficiency, die attach material must not contact the side of the chip. XB500™ chips are shipped with the junction side up, requiring die transfer prior to die attach. Specifications are subject to change without notice. Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and XBright are registered trademarks, and XB and XB500 are trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com  CPR3CS Rev. B Standard Bins for CxxxXB500-Sxx00-A LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxXB500-Sxx00-A) orders may be filled with any or all bins (CxxxXB500-02xx-A) contained in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 125 mA. Radiant flux values are measured using Au-plated TO39 headers without an encapsulant. C460XB500-S3500-A Radiant Flux 55.0 mW C460XB500-0205-A C460XB500-0201-A C460XB500-0206-A C460XB500-0202-A C460XB500-0207-A C460XB500-0203-A C460XB500-0208-A C460XB500-0204-A 35.0 mW 455 nm 457.5 nm 460 nm Dominant Wavelength C470XB500-S3000-A 462.5 nm 465 nm Radiant Flux 38.0 mW C470XB500-0205-A C470XB500-0201-A C470XB500-0206-A C470XB500-0202-A C470XB500-0207-A C470XB500-0203-A C470XB500-0208-A C470XB500-0204-A 30.0 mW 465 nm 467.5 nm 470 nm Dominant Wavelength C505XB500-S000-A 472.5 nm 475 nm Radiant Flux 26.0 mW C505XB500-0203-A C505XB500-0201-A C505XB500-0204-A C505XB500-0202-A 20.0 mW 500 nm 505 nm Dominant Wavelength C57XB500-S500-A 510 nm Radiant Flux 24.0 mW 19.0 mW C527XB500-0207-A C527XB500-0204-A C527XB500-0201-A C527XB500-0208-A C527XB500-0205-A C527XB500-0202-A C527XB500-0209-A C527XB500-0206-A C527XB500-0203-A 15.0 mW 520 nm 525 nm 530 nm Dominant Wavelength 535 nm Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and XBright are registered trademarks, and XB and XB500 are trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com 3 CPR3CS Rev. B Characteristic Curves, TA = 25˚C Forward Current vs Forward Voltage 9 Dominant Wavelength Shift vs Forward Current 160 8 140 Dominant Wavelength Shift (nm) 7 6 5 4 3 2 1 0 -1 470nm 527nm 120 Forward Current (mA) 100 80 60 40 20 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -2 0 20 40 60 80 Forward Current (mA) 100 120 140 160 Forward Voltage (V) Relative Intensity vs Forward Current 140 120 100 % Intensity 80 60 40 20 0 0 20 40 60 80 100 120 140 160 Forward Current (mA) Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and XBright are registered trademarks, and XB and XB500 are trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com 4 CPR3CS Rev. B