C527XB900-S4000-A

XBright® Power Chip LED CxxxXB900-Sx000-A Cree’s XB™ power chip series of LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and require only a single wire bond connection. These LEDs are useful in a broad range of applications such as outdoor full-motion LED video signs, automotive lighting and white LEDs. Cree’s XB power chips are compatible with optical power packages that employ proper thermal management. FEATURES • • • XBright LED Technology Larger “Power Chip” Design High Performance – – – • • 90 mW min. (460 & 470 nm) Blue 60 mW min. (505 nm) Traffic Green 40 mW min. (527 nm) Green APPLICATIONS • General Illumination – – – – – • • • Automobile Aircraft Decorative Lighting Task Lighting Outdoor Illumination Single Wire Bond Structure AuSn Backside Metalization White LEDs Backlighting Traffic Signals CxxxXB900-Sx000-A Chip Diagram Top View G•SiC LED Chip 900 x 900 μm Bottom View Die Cross Section .D PR3CM, Rev Datasheet: C 764 μm Contact Metal Width = 30 μm Bond Pad 120 μm Diameter SiC Substrate h = 250 μm Cathode (-) InGaN Anode (+) Subject to change without notice. www.cree.com  Maximum Ratings at TA = 5°C Note  DC Forward Current Peak Forward Current (1/10 duty cycle @ 1kHz) LED Junction Temperature Reverse Voltage Operating Temperature Range Storage Temperature Range Typical Electrical/Optical Characteristics at TA = 5°C, If = 350mA Part Number Forward Voltage (Vf, V) Min. C460XB900-S9000-A C470XB900-S9000-A C505XB900-S6000-A C527XB900-S4000-A Mechanical Specifications Description P-N Junction Area (μm) Top Area (μm) Bottom Area (μm) Chip Thickness (μm) Top Au Bond Pad Diameter (μm) Au Bond Pad Thickness (μm) Back Contact Metal Area (μm) Back Contact Metal Thickness (μm) 3.0 3.0 3.0 3.0 Typ. 3.4 3.4 3.4 3.4 Max. 3.9 3.9 3.9 3.9 Note  CxxxXB900-Sx000-A 500 mA Note 2 700 mA 125°C 5V -40°C to +85°C -40°C to +100°C Reverse Current [I(Vr=5V), μA] Max. 10 10 10 10 Full Width Half Max (λD, nm) Typ. 21 22 30 35 CxxxXB900-Sx000-A Dimension 848 x 848 725 x 725 900 x 900 250 120 1.2 764 x 764 1.7 Tolerance ± 25 ± 25 ± 50 ± 25 ± 10 ± 0.5 ± 25 ± 0.3 Notes: 1. 2. 3. 4. 5. 6. Maximum ratings are package dependent. The above ratings were determined using a Au-plated TO39 header without an encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average expected by manufacturer in large quantities and are provided for information only. All measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics measured in an integrating sphere using Illuminance E. Back contact metal is 80%/20% Au/Sn by weight, with target eutectic melting temperature of approximately 282°C. Caution: To avoid leakage currents and achieve maximum output efficiency, die attach material must not contact the side of the chip. XB900 chips are shipped with the junction side up, requiring die transfer prior to die attach. Specifications are subject to change without notice. Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and XBright are registered trademarks, and XB is a trademark of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com  CPR3CM Rev. D Standard Bins for CxxxXB900-Sx000-A LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxXB900-Sx000-A) orders may be filled with any or all bins (CxxxXB290-02xx-A) contained in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 350 mA. Radiant flux values are measured using Au-plated TO39 headers without an encapsulant. C460XB900-S9000-A Radiant Flux C460XB900-0213-A C460XB900-0214-A C460XB900-0210-A C460XB900-0206-A C460XB900-0202-A C460XB900-0215-A C460XB900-0211-A C460XB900-0207-A C460XB900-0203-A C460XB900-0216-A C460XB900-0212-A C460XB900-0208-A C460XB900-0204-A 165 mW 140 mW 115 mW C460XB900-0209-A C460XB900-0205-A C460XB900-0201-A 90 mW 455 nm 457.5 nm 460 nm Dominant Wavelength C470XB900-S9000-A 462.5 nm 465 nm Radiant Flux 140 mW 115 mW C470XB900-0209-A C470XB900-0205-A C470XB900-0201-A C470XB900-0210-A C470XB900-0206-A C470XB900-0202-A C470XB900-0211-A C470XB900-0207-A C470XB900-0203-A C470XB900-0212-A C470XB900-0208-A C470XB900-0204-A 90 mW 465 nm 467.5 nm 470 nm Dominant Wavelength C505XB900-S6000-A 472.5 nm 475 nm Radiant Flux 85 mW C505XB900-0203-A C505XB900-0201-A C505XB900-0204-A C505XB900-0202-A 60 mW 500 nm 505 nm Dominant Wavelength C57XB900-S4000-A 510 nm Radiant Flux 75 mW 55 mW C527XB900-0207-A C527XB900-0204-A C527XB900-0201-A C527XB900-0208-A C527XB900-0205-A C527XB900-0202-A C527XB900-0209-A C527XB900-0206-A C527XB900-0203-A 40 mW 520 nm 525 nm 530 nm Dominant Wavelength 535 nm Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and XBright are registered trademarks, and XB is a trademark of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com 3 CPR3CM Rev. D Characteristic Curves, TA = 25˚C Typical Junction Temp. Curves, If = 350 mA Forward Current vs Forward Voltage 400 Relative Light Intensity 100% 90% 80% 70% 60% 50% 40% 30% 470nm 20% 350 300 250 200 150 100 50 10% 0 0 0.5 1 1.5 2 Vf (V) 2.5 3 3.5 4 0% 0 25 50 75 Junction Temperature (C) 100 125 Relative Light Intensity If (mA) Relative Intensity vs Forward Current 140 Wavelength Shift 6.0 5.0 120 Wavelength Shift (nm) 100 4.0 80 % 60 3.0 2.0 470nm 40 20 1.0 0 0 50 100 150 200 If (mA) 250 300 350 400 0.0 0 25 50 75 Junction Temperature (C) 100 125 Dominant Wavelength Shift vs Forward Current 0.0 10 Voltage Shift 8 -0.1 6 Shift (nm) Voltage Shift (V) 470nm 527nm 4 -0.2 2 -0.3 0 470nm -0.4 0 50 100 150 200 If (mA) 250 300 350 400 0 25 50 75 100 125 -2 Junction Temperature (C) Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and XBright are registered trademarks, and XB is a trademark of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com 4 CPR3CM Rev. D