CGH55030P2

CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/ CGH55030P2 ideal for C-band pulsed or CW saturated amplifiers. The transistor is available in both screw-down, flange and solder-down, pill packages. Based on appropriate external match adjustment, the CGH55030F2/CGH55030P2 is suitable for applications up to 6 GHz. Package Type : 440196 & 440166 PN: CGH5503 0P2 & CGH55 030F2 FEATURES • • • • • 4.5 to 6.0 GHz Operation 12 dB Small Signal Gain at 5.65 GHz 30 W typical PSAT 60 % Efficiency at PSAT 28 V Operation APPLICATIONS • • • • • 2-Way Private Radio Broadband Amplifiers Cellular Infrastructure Test Instrumentation Class A, AB Amplifiers for Drivers and Gain Blocks rch 2011 Rev 3.1 – Ma Subject to change without notice. www.cree.com/wireless 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Soldering Temperature1 Screw Torque Thermal Resistance, Junction to Case2 Case Operating Temperature2,3 Symbol VDSS VGS TSTG TJ IGMAX TS Rating 84 -10, +2 -65, +150 225 7.0 245 60 4.8 -40, +150 Units Volts Volts ˚C ˚C mA ˚C in-oz ˚C/W ˚C τ RθJC TC Note: 1 Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp 2 Measured for the CGH55030 at PDISS = 28 W. 3 See also, the Power Dissipation De-rating Curve on Page 5. Electrical Characteristics (TC = 25˚C) Characteristics DC Characteristics 1 Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage Gate Quiescent Voltage Saturated Drain Current Drain-Source Breakdown Voltage VGS(th) VGS(Q) IDS VBR -3.8 – 5.8 120 -3.3 -3.0 7.0 – –2.3 – – – VDC VDC A VDC VDS = 10 V, ID = 7.2 mA VDS = 28 V, ID = 250 mA VDS = 6.0 V, VGS = 2 V VGS = -8 V, ID = 7.2 mA RF Characteristics2 (TC = 25˚C, F0 = 5.65 GHz unless otherwise noted) Small Signal Gain Power Output3 Drain Efficiency4 Output Mismatch Stress Dynamic Characteristics Input Capacitance Output Capacitance Feedback Capacitance CGS CDS CGD – – – 9.0 2.6 0.4 – – – pF pF pF VDS = 28 V, Vgs = -8 V, f = 1 MHz VDS = 28 V, Vgs = -8 V, f = 1 MHz VDS = 28 V, Vgs = -8 V, f = 1 MHz GSS PSAT η 9.0 20 50 - 11.0 30 60 – – – 10 : 1 dB W % Y VDD = 28 V, IDQ = 250 mA VDD = 28 V, IDQ = 250 mA VDD = 28 V, IDQ = 250 mA, PSAT No damage at all phase angles, VDD = 28 V, IDQ = 250 mA, PSAT VSWR Notes: 1 Measured on wafer prior to packaging. 2 Measured in CGH55030-TB. 3 PSAT is defined as IG = 0.72 mA. 4 Drain Efficiency = POUT / PDC Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGH55030F2_P2 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Typical Performance Small Signal S-Parameters vs Frequency of CGH55030F2 and CGH55030P2 in the CGH55030-TB VDD = 28 V, IDQ = 250 mA 12 5 10 S21 S11 0 8 -5 S21 (dB) 6 -10 4 -15 2 -20 0 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 6.1 -25 Frequency (GHz) Drain Efficiency, Power and Gain vs Frequency of the CGH55030F2 and GaN HEMT C-Band Performance CGH55030 - CGH55030P2 in the CGH55030-TB VDD = Power, IDQ = 250 mA Drain Efficiency,28 V, and Gain vs Frequency 70 Drain Efficiency (%), Power (dBm), Gain (dB) 60 50 40 30 Gain (dB) Psat (dBm) 20 Drain Efficiency (%) 10 0 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6 Frequency (GHz) S11 (dB) Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGH55030F2_P2 Rev 3.1 Typical Performance Simulated Maximum Available Gain and K Factor of the CGH55030F2/CGH55030P2 VDD = 28 V, IDQ = 250 mA MAG (dB) Typical Noise Performance Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH55030F2/CGH55030P2 VDD = 28 V, IDQ = 250 mA Minimum Noise Figure (dB) Noise Resistance (Ohms) Symbol HBM CDM Class 1A (> 250 V) II (200 < 500 V) Test Methodology JEDEC JESD22 A114-D JEDEC JESD22 C101-C Electrostatic Discharge (ESD) Classifications Parameter Human Body Model Charge Device Model K Factor Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGH55030F2_P2 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Source and Load Impedances D Z Source G Z Load S Frequency (MHz) 5500 5650 5800 Z Source 8.0 – j12.4 8.7 - j13.1 8.4 - j14.0 Z Load 14.1 – j12.6 14.7 – j11.7 15.4 – j11.0 Note 1. VDD = 28V, IDQ = 250 mA in the 440166 package. Note 2. Impedances are extracted from the CGH55030-TB demonstration amplifier and are not source and load pull data derived from the transistor. CGH55030F2 and CGH55030P2 Power Dissipation De-rating Curve CGH40025F CW Power Dissipation De-rating Curve 30 25 Power Dissipation (W) 20 15 Note 1 10 5 0 0 25 50 75 100 125 150 175 200 225 250 Maximum Case Temperature (°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGH55030F2_P2 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless CGH55030-TB Demonstration Amplifier Circuit Bill of Materials Designator R1 R2 C2 C16 C15 C8 C9 C1 C6,C13 C4,C11 C5,C12 C7,C14 J3,J4 J1 - Description RES, 1/16W, 0603, 1%, 562 OHMS RES, 1/16W, 0603, 1%, 22.6 OHMS CAP, 0.3pF, +/-0.05pF, 0402, ATC600L CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 0.4pF, +/-0.05pF, 0603, ATC600S CAP, 1.2pF, +/-0.1pF, 0603, ATC600S CAP,200 PF,0603 PKG, 100 V CAP, 10.0pF,+/-5%, 0603, ATC600S CAP, 39pF, +/-5%, 0603, ATC600S CAP, 330000PF, 0805, 100V, TEMP STABILIZ CONN, SMA, PANEL MOUNT JACK, FLANGE HEADER RT>PLZ .1CEN LK 5POS PCB, RO4350B, Er = 3.48, h = 20 mil CGH55030 Qty 1 1 1 1 1 1 1 1 2 2 2 2 2 1 1 1 CGH55030-TB Demonstration Amplifier Circuit Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGH55030F2_P2 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless CGH55030-TB Demonstration Amplifier Circuit Schematic (CGH55030F) CGH55030-TB Demonstration Amplifier Circuit Outline Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGH55030F2_P2 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Typical Package S-Parameters for CGH55030 (Small Signal, VDS = 28 V, IDQ = 250 mA, angle in degrees) Frequency 500 MHz 600 MHz 700 MHz 800 MHz 900 MHz 1.0 GHz 1.1 GHz 1.2 GHz 1.3 GHz 1.4 GHz 1.5 GHz 1.6 GHz 1.7 GHz 1.8 GHz 1.9 GHz 2.0 GHz 2.1 GHz 2.2 GHz 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz 2.8 GHz 2.9 GHz 3.0 GHz 3.2 GHz 3.4 GHz 3.6 GHz 3.8 GHz 4.0 GHz 4.2 GHz 4.4 GHz 4.6 GHz 4.8 GHz 5.0 GHz 5.2 GHz 5.4 GHz 5.6 GHz 5.8 GHz 6.0 GHz Mag S11 0.917 0.916 0.916 0.916 0.916 0.916 0.917 0.917 0.918 0.918 0.919 0.919 0.920 0.921 0.921 0.922 0.923 0.924 0.924 0.925 0.926 0.926 0.927 0.928 0.928 0.929 0.930 0.931 0.932 0.933 0.933 0.934 0.934 0.935 0.935 0.935 0.935 0.935 0.935 0.934 0.934 Ang S11 -157.22 -161.92 -165.46 -168.28 -170.61 -172.60 -174.33 -175.88 -177.28 -178.57 -179.78 179.09 178.01 176.98 175.99 175.03 174.09 173.17 172.27 171.39 170.51 169.65 168.79 167.93 167.08 166.24 164.54 162.85 161.14 159.42 157.68 155.91 154.11 152.28 150.41 148.49 146.53 144.52 142.45 140.31 138.12 Mag S21 12.62 10.57 9.07 7.94 7.05 6.33 5.74 5.24 4.82 4.46 4.14 3.87 3.62 3.40 3.21 3.03 2.87 2.73 2.60 2.47 2.36 2.26 2.16 2.08 1.99 1.92 1.78 1.66 1.55 1.46 1.38 1.31 1.24 1.18 1.13 1.08 1.04 1.00 0.97 0.94 0.91 Ang S21 91.45 87.33 83.78 80.58 77.64 74.88 72.25 69.73 67.30 64.94 62.65 60.41 58.22 56.07 53.97 51.90 49.87 47.87 45.91 43.97 42.07 40.19 38.34 36.52 34.72 32.94 29.45 26.05 22.72 19.46 16.27 13.12 10.03 6.97 3.95 0.96 -2.00 -4.96 -7.90 -10.84 -13.79 Mag S12 0.018 0.018 0.018 0.018 0.017 0.017 0.017 0.017 0.017 0.017 0.016 0.016 0.016 0.016 0.015 0.015 0.015 0.014 0.014 0.014 0.014 0.013 0.013 0.013 0.013 0.013 0.012 0.012 0.012 0.012 0.012 0.012 0.013 0.013 0.014 0.015 0.016 0.017 0.018 0.020 0.021 Ang S12 7.56 4.70 2.41 0.51 -1.12 -2.55 -3.82 -4.94 -5.95 -6.84 -7.63 -8.31 -8.90 -9.39 -9.77 -10.06 -10.24 -10.31 -10.27 -10.12 -9.85 -9.46 -8.95 -8.31 -7.54 -6.65 -4.49 -1.85 1.19 4.55 8.08 11.64 15.08 18.26 21.09 23.50 25.48 27.02 28.12 28.83 29.18 Mag S22 0.458 0.465 0.472 0.478 0.485 0.493 0.500 0.508 0.516 0.525 0.533 0.542 0.550 0.559 0.568 0.577 0.585 0.594 0.602 0.610 0.619 0.626 0.634 0.642 0.649 0.656 0.670 0.683 0.695 0.706 0.716 0.726 0.735 0.743 0.750 0.756 0.762 0.768 0.773 0.777 0.781 Ang S22 -158.97 -160.93 -162.19 -163.04 -163.64 -164.09 -164.45 -164.77 -165.06 -165.36 -165.67 -165.99 -166.35 -166.73 -167.14 -167.59 -168.07 -168.57 -169.11 -169.67 -170.26 -170.88 -171.52 -172.17 -172.85 -173.55 -175.00 -176.50 -178.06 -179.66 178.70 177.02 175.30 173.56 171.78 169.97 168.12 166.24 164.32 162.36 160.36 Download this s-parameter file in “.s2p” format at http://www.cree.com/products/wireless_s-parameters.asp Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGH55030F2_P2 Rev 3.1 Product Dimensions CGH55030F (Package Type — 440166) PRELIMINARY CREE Product Dimensions CGH55030P (Package Type — 440196) Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGH55030F2_P2 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/wireless Ryan Baker Marketing Cree, RF Components 919.407.7816 Tom Dekker Sales Director Cree, RF Components 919.407.5639 Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGH55030F2_P2 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless