CXXXEZ290-SXX00

Cree® EZBright290™ LEDs Data Sheet CxxxEZ290-Sxx00 Cree’s EZBright LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these LEDs are die attachable with conductive epoxy. These vertically structured, low forward voltage LED chips are approximately 100 microns in height and require only a single wire bond connection. Cree’s EZ™ LED chips are tested for conformity to optical and electrical specifications. Applications for EZ LEDs include next-generation mobile appliances for use in their LCD backlights and digital camera flash where brightness, subminiaturization, and low power consumption are required. Additional applications include indoor and outdoor displays. FEATURES • EZBright LED Rf Performance – 460 & 470 nm    – – • • • EZ-18™ - 18 mW min. (470 nm only) EZ-21™ - 21 mW min. EZ-24™ - 24 mW min. (460 nm only) APPLICATIONS • LCD Backlighting – – – • • • • Mobile Appliances Digital Still Cameras Monitors Digital Camera Flash LED Video Displays Audio Product Display Lighting Automotive 505 nm - EZ-10™ - 10 mW min. 527 nm - EZ-8™ - 8.0 mW min. Lambertian Radiation Conductive-Epoxy Die Attach Low Forward Voltage - 3.2 V Typical at 20 mA CxxxEZ290-Sxx00 Chip Diagram Top View EZBright LED 280 x 280 μm Bottom View Die Cross Section .B CPR3CQ, Rev Data Sheet: Cathode (-) Gold Bond Pad 100 μm Diameter t = 100 μm Backside Metallization Anode (+) Subject to change without notice. www.cree.com  Maximum Ratings at TA = 25°C Notes &3 DC Forward Current Peak Forward Current (1/10 duty cycle @ 1 kHz) LED Junction Temperature Reverse Voltage Operating Temperature Range Storage Temperature Range Electrostatic Discharge Threshold (HBM) Note 2 CxxxEZ290-Sxx00 50 mA 100 mA 125°C 5V -40°C to +100°C -40°C to +100°C 1000 V Note 3 Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA Part Number Forward Voltage (Vf, V) Min. C460EZ290-Sxx00 C470EZ290-Sxx00 C505EZ290-Sxx00 C527EZ290-Sxx00 Mechanical Specifications Description P-N Junction Area (μm) Top Area (μm) Bottom Area (μm) Chip Thickness (μm) Au Bond Pad Diameter (μm) Au Bond Pad Thickness (μm) Back Contact Metal Area (μm) 2.7 2.7 2.7 2.7 Typ. 3.2 3.2 3.2 3.2 Max. 3.7 3.7 3.7 3.7 Reverse Current [I(Vr=5V), μA] Max. 2 2 2 2 Full Width Half Max (λD, nm) Typ. 21 22 30 35 CxxxEZ290-Sxx00 Dimension 250 x 250 280 x 280 280 x 280 100 100 3.0 280 x 280 Tolerance ± 25 ± 25 ± 25 ± 15 -15, +5 ± 1.0 ± 25 Notes: 1. 2. 3. 4. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (