CXXXMB290-SXX00

MegaBright® Generation II LEDs CxxxMB290-Sxx00 Cree’s MB™ Generation II series of MegaBright LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED chips have a geometrically enhanced vertical chip structure to maximize light extraction efficiency and require only a single wire bond connection. Sorted die kits provide die sheets conveniently sorted into wavelength and radiant flux bins. Cree’s MB series chips are tested for conformity to optical and electrical specifications and the ability to withstand 1000V ESD. These LEDs are useful in a broad range of applications such as outdoor full-motion LED video signs, automotive lighting and white LEDs, yet can also be used in high-volume applications such as LCD backlighting. Cree’s MB series chips are compatible with most radial and SMT LED assembly processes. FEATURES • MegaBright LED Performance – 460 & 470nm      – – • • MB-8 – 8.0 mW min. MB-10 - 10.0 mW min. MB-12 - 12.0 mW min. MB-14 - 14.0 mW min. MB-16 - 16.0 mW min (460 nm) APPLICATIONS • • • • • White LEDs LCD Backlighting Units Outdoor LED Video Displays Automotive Dashboard Lighting Traffic Signals 505 nm - 6.0 mW min. 527 nm - 5.0 mW min. Single Wire Bond Structure Class 2 ESD Rating CxxxMB290-Sxx00 Chip Diagram Top View G•SiC LED Chip 300 x 300 μm Mesa (junction) 250 x 250 μm Gold Bond Pad 112 μm Diameter Bottom View Die Cross Section InGaN Anode (+) C PR3CK, Rev. Datasheet: C SiC Substrate h = 250 μm Backside Metallization Cathode (-) Subject to change without notice. www.cree.com  Maximum Ratings at TA = 25°C Notes &3 DC Forward Current Peak Forward Current (1/10 duty cycle @ 1kHz) LED Junction Temperature Reverse Voltage Operating Temperature Range Storage Temperature Range Electrostatic Discharge Threshold (HBM) Note 2 CxxxMB290-Sxx00 30 mA 100 mA 125°C 5V -40°C to +100°C -40°C to +100°C 1000 V Class 2 Note 3 Electrostatic Discharge Classification (MIL-STD-883E)Note 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA Part Number Forward Voltage (Vf, V) Min. C460MB290-Sxx00 C470MB290-Sxx00 C505MB290-S0600 C527MB290-S0500 Mechanical Specifications Description P-N Junction Area (μm) Top Area (μm) Bottom Area (μm) Chip Thickness (μm) Au Bond Pad Diameter (μm) Au Bond Pad Thickness (μm) Backside Metal Diameter (μm) 2.9 2.9 2.9 2.9 Typ. 3.3 3.3 3.3 3.3 Max. 3.7 3.7 3.9 3.9 Reverse Current [I(Vr=5V), μA] Max. 2 2 2 2 Full Width Half Max. (λD, nm) Typ. 21 22 30 35 CxxxMB290-Sxx00 Dimension 250 x 250 300 x 300 200 x 200 250 112 1.2 104 Tolerance ± 25 ± 25 ± 25 ± 25 ± 20 ± 0.5 ± 20 Notes: 1. 2. 3. 4. 5. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Dominant wavelength measurements taken using Illuminance E. Caution: To obtain optimum output efficiency, the maximum height of die attach epoxy on the side of the chip should not exceed 80 μm. Specifications are subject to change without notice. Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and MegaBright are registered trademarks, and MegaBright Max, MB Max and MB are trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com 2 CPR3CK Rev. C Standard Bins for CxxxMB290-Sxx00 LED chips are sorted to the radiant flux and dominant wavelength bins shown. Sorted die sheets contain die from only one bin. Sorted die kit (CxxxMB290-Sxx00) orders may be filled with any or all bins (CxxxMB290-02xx) contained in the kit. MB-6 Radiant Flux 18.0 mW C460MB290-0221 C460MB290-0217 C460MB290-S600 C460MB290-0222 C460MB290-0218 C460MB290-0223 C460MB290-0219 C460MB290-0224 C460MB290-0220 16.0 mW 455 nm 457.5 nm 460 nm Dominant Wavelength C460MB290-S400 462.5 nm 465 nm MB-4 Radiant Flux 18.0 mW 16.0 mW C460MB290-0221 C460MB290-0217 C460MB290-0213 C460MB290-0222 C460MB290-0218 C460MB290-0214 C460MB290-0223 C460MB290-0219 C460MB290-0215 C460MB290-0224 C460MB290-0220 C460MB290-0216 14.0 mW 455 nm 457.5 nm 460 nm Dominant Wavelength C460MB290-S200 462.5 nm 465 nm MB-2 C460MB290-0221 C460MB290-0222 C460MB290-0218 C460MB290-0214 C460MB290-0210 C460MB290-0223 C460MB290-0219 C460MB290-0215 C460MB290-0211 C460MB290-0224 C460MB290-0220 C460MB290-0216 C460MB290-0212 Radiant Flux 18.0 mW C460MB290-0217 16.0 mW 14.0 mW C460MB290-0213 C460MB290-0209 12.0 mW 455 nm 457.5 nm 460 nm Dominant Wavelength 462.5 nm 465 nm Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and MegaBright are registered trademarks, and MegaBright Max, MB Max and MB are trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com 3 CPR3CK Rev. C Standard Bins for CxxxMB290-Sxx00 (continued) MB-0 18.0 mW 16.0 mW 14.0 mW 12.0 mW C460MB290-0221 C460MB290-0217 C460MB290-0213 C460MB290-0209 C460MB290-0205 C460MB290-S000 C460MB290-0222 C460MB290-0218 C460MB290-0214 C460MB290-0210 C460MB290-0206 C460MB290-0223 C460MB290-0219 C460MB290-0215 C460MB290-0211 C460MB290-0207 C460MB290-0224 C460MB290-0220 C460MB290-0216 C460MB290-0212 C460MB290-0208 Radiant Flux 10.0 mW 455 nm 457.5 nm 460 nm Dominant Wavelength C460MB290-S0800 462.5 nm 465 nm MB-8 C460MB290-0221 C460MB290-0222 C460MB290-0218 C460MB290-0214 C460MB290-0210 C460MB290-0206 C460MB290-0202 C460MB290-0223 C460MB290-0219 C460MB290-0215 C460MB290-0211 C460MB290-0207 C460MB290-0203 C460MB290-0224 C460MB290-0220 C460MB290-0216 C460MB290-0212 C460MB290-0208 C460MB290-0204 18.0 mW C460MB290-0217 Radiant Flux 16.0 mW C460MB290-0213 14.0 mW 12.0 mW 10.0 mW C460MB290-0209 C460MB290-0205 C460MB290-0201 8.0 mW 455 nm 457.5 nm 460 nm Dominant Wavelength 462.5 nm 465 nm Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and MegaBright are registered trademarks, and MegaBright Max, MB Max and MB are trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com 4 CPR3CK Rev. C Standard Bins for CxxxMB290-Sxx00 (continued) MB-4 Radiant Flux 16.0 mW C470MB290-0217 C470MB290-0213 C470MB290-S400 C470MB290-0218 C470MB290-0214 C470MB290-0219 C470MB290-0215 C470MB290-0220 C470MB290-0216 14.0 mW 465 nm 467.5 nm 470 nm Dominant Wavelength C470MB290-S200 472.5 nm 475 nm MB-2 Radiant Flux 16.0 mW 14.0 mW C470MB290-0217 C470MB290-0213 C470MB290-0209 C470MB290-0218 C470MB290-0214 C470MB290-0210 C470MB290-0219 C470MB290-0215 C470MB290-0211 C470MB290-0220 C470MB290-0216 C470MB290-0212 12.0 mW 465 nm 467.5 nm 470 nm Dominant Wavelength C470MB290-S000 472.5 nm 475 nm MB-0 C470MB290-0217 C470MB290-0218 C470MB290-0214 C470MB290-0210 C470MB290-0206 C470MB290-0219 C470MB290-0215 C470MB290-0211 C470MB290-0207 C470MB290-0220 C470MB290-0216 C470MB290-0212 C470MB290-0208 Radiant Flux 16.0 mW C470MB290-0213 14.0 mW 12.0 mW C470MB290-0209 C470MB290-0205 10.0 mW 465 nm 467.5 nm 470 nm Dominant Wavelength C470MB290-S0800 472.5 nm 475 nm MB-8 16.0 mW Radiant Flux 14.0 mW 12.0 mW 10.0 mW C470MB290-0217 C470MB290-0213 C470MB290-0209 C470MB290-0205 C470MB290-0201 C470MB290-0218 C470MB290-0214 C470MB290-0210 C470MB290-0206 C470MB290-0202 C470MB290-0219 C470MB290-0215 C470MB290-0211 C470MB290-0207 C470MB290-0203 C470MB290-0220 C470MB290-0216 C470MB290-0212 C470MB290-0208 C470MB290-0204 8.0 mW 465 nm 467.5 nm 470 nm Dominant Wavelength 472.5 nm 475 nm Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and MegaBright are registered trademarks, and MegaBright Max, MB Max and MB are trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com 5 CPR3CK Rev. C Standard Bins for CxxxMB290-Sxx00 (continued) 505MB Radiant Flux 9.0 mW 7.5 mW C505MB290-0203 C505MB290-0201 C505MB290-0204 C505MB290-0202 C505MB290-S0600 C505MB290-0205 C505MB290-0206 6.0 mW 500nm 505nm Dominant Wavelength C527MB290-S0500 510nm 527MB Radiant Flux 7.0 mW 6.0 mW C527MB290-0207 C527MB290-0204 C527MB290-0201 C527MB290-0208 C527MB290-0205 C527MB290-0202 C527MB290-0209 C527MB290-0206 C527MB290-0203 5.0 mW 520 nm 525 nm 530 nm 535 nm Dominant Wavelength Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and MegaBright are registered trademarks, and MegaBright Max, MB Max and MB are trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com 6 CPR3CK Rev. C Characteristic Curves These are representative measurements for the MB product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Relative Intensity vs Forward Current 12.00 Wavelength Shift vs Forward Current 140 10.00 120 8.00 460nm 527nm 6.00 Shift (nm) 505nm 4.00 100 % Intensity 80 60 2.00 40 0.00 20 -2.00 0 0 5 10 15 If (mA) 20 25 30 -4.00 0 5 10 15 20 25 30 If (mA) Forward Current vs Forward Voltage 100 Relative Intensity vs Peak Wavelength 30 25 Relative Intensity (%) 80 20 If (mA) 60 15 40 10 5 20 0 0.0 0.5 1.0 1.5 2.0 2.5 Vf (V) 3.0 3.5 4.0 4.5 5.0 400 500 Wavelength (nm) 600 Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and MegaBright are registered trademarks, and MegaBright Max, MB Max and MB are trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com 7 CPR3CK Rev. C