CT521-1GB
DC DIP Phototransistor Optocoupler
Features
Description
High isolation 5300 VRMS
The CT521-1GB consists of a photo transistor
DC input with transistor output
Operating temperature range - 55 °C to 125 °C
RoHS compliance
REACH compliance
Applications
Halogen free
Switch mode power supplies
Regulatory Approvals
Computer peripheral interface
UL - UL1577 (Pending Approval)
Microprocessor system interface
VDE - EN60747-5-5 (Pending Approval)
CQC – GB4943.1, GB8898 (Pending Approval)
IEC60065, IEC60950 (Pending Approval)
optically coupled to a gallium arsenide Infraredemitting diode in a DIP package.
Package Outline
Schematic
CT521-1
CT Micro
Proprietary & Confidential
Page 1
Rev 1
Jun, 2018
CT521-1GB
DC DIP Phototransistor Optocoupler
Absolute Maximum Rating at 25oC
Symbol
Parameters
Ratings
Units
VISO
Isolation voltage
5300
VRMS
PTOT
Total power dissipation
200
mW
TOPR
Operating temperature
-55 ~ +125
oC
TSTG
Storage temperature
-55 ~ +150
oC
TSOL
Soldering temperature
260
oC
Forward current
60
mA
1000
mA
6
V
Notes
Emitter
IF
IF(TRANS)
Peak transient current
(≤1μs P.W,300pps)
VR
Reverse voltage
PD
Emitter power dissipation
100
mW
Detector power dissipation
150
mW
BVCEO
Collector-Emitter Breakdown Voltage
80
V
BVECO
Emitter-Collector Breakdown Voltage
7
V
Collector Current
80
mA
Detector
PC
IC
CT Micro
Proprietary & Confidential
Page 2
Rev 1
Jun, 2018
CT521-1GB
DC DIP Phototransistor Optocoupler
Electrical Characteristics T
A
= 25°C (unless otherwise specified)
Emitter Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
VF
Forward voltage
IF=10mA
-
1.25
1.4
V
IR
Reverse Current
VR = 6V
-
-
5
µA
Input Capacitance
f= 1MHz
-
30
-
pF
Min
Typ
Max
Units
CIN
Notes
Detector Characteristics
Symbol
Parameters
Test Conditions
BVCEO
Collector-Emitter Breakdown
IC= 100µA
55
-
-
V
BVECO
Emitter-Collector Breakdown
IE= 100µA
7
-
-
V
VCE= 24V, IF=0mA
-
-
100
nA
VCE= 24V, IF=0mA,Ta = 85˚C
-
-
50
µA
Test Conditions
Min
Typ
Max
Units
IF= 5mA, VCE= 5V
100
-
600
%
IF= 1mA, VCE= 0.4V
30
-
-
%
IF= 1mA, IC= 0.2mA
-
-
0.4
V
5x1010
-
-
Ω
-
0.25
1
pF
Min
Typ
Max
Units
ICEO
Notes
Collector-Emitter Dark Current
Transfer Characteristics
Symbol
CTR
Parameters
Notes
Current Transfer Ratio
Collector-Emitter Saturation
VCE(SAT)
Voltage
RIO
Isolation Resistance
VIO= 500VDC
CIO
Isolation Capacitance
f= 1MHz
Switching Characteristics
Symbol
Parameters
tr
Rise Time
tf
Fall Time
ton
Turn-on time
toff
Turn-off time
Test Conditions
-
16
IC= 2mA, VCE= 2V
-
16
RL= 100Ω
-
20
-
20
Notes
µs
µs
CT Micro
Proprietary & Confidential
Page 3
Rev 1
Jun, 2018
CT521-1GB
DC DIP Phototransistor Optocoupler
Typical Characteristic Curves
CT Micro
Proprietary & Confidential
Page 4
Rev 1
Jun, 2018
CT521-1GB
DC DIP Phototransistor Optocoupler
CT Micro
Proprietary & Confidential
Page 5
Rev 1
Jun, 2018
CT521-1GB
DC DIP Phototransistor Optocoupler
Package Dimension Dimensions in mm unless otherwise stated
Standard DIP – Through Hole
Gullwing (400mil) Lead Forming – Through Hole (M Type)
CT Micro
Proprietary & Confidential
Page 6
Rev 1
Jun, 2018
CT521-1GB
DC DIP Phototransistor Optocoupler
Surface Mount Lead Forming (S Type)
Surface Mount (Low Profile) Lead Forming (SL Type)
CT Micro
Proprietary & Confidential
Page 7
Rev 1
Jun, 2018
CT521-1GB
DC DIP Phototransistor Optocoupler
Surface Mount (Gullwing) Lead Forming (SLM Type)
CT Micro
Proprietary & Confidential
Page 8
Rev 1
Jun, 2018
CT521-1GB
DC DIP Phototransistor Optocoupler
Recommended Solder Mask Dimensions in mm unless otherwise stated
Surface Mount Lead Forming & Surface Mount (Low Profile) Lead Forming
Surface Mount (Gullwing) Lead Forming
Marking Information
CT
521GB
VYWWK
Note:
CT
521-1
GB
V
Y
WW
K
: Denotes “CT Micro”
: Part Number
: CTR Rank
: VDE Safety Option ( V or none)
: Fiscal Year
: Work Week
: Manufacturing Code
CT Micro
Proprietary & Confidential
Page 9
Rev 1
Jun, 2018
CT521-1GB
DC DIP Phototransistor Optocoupler
Ordering Information
CT521-1GB(V)(W)(Y)
CT
521-1
GB
: Denotes “CT Micro”
: Part Number
: CTR Rank
V
W
Y
: VDE Safety Option( V or none)
: Lead form option (S, SL, SLM, M or none)
: Tape and reel option (T1, T2 or none )
Option
Description
Quantity
None
Standard 4 Pin DIP
100 Units/Tube
M
Gullwing (400mil) Lead Forming
100 Units/Tube
S(T1)
Surface Mount Lead Forming – With Option 1 Taping
1500 Units/Reel
S(T2)
Surface Mount Lead Forming – With Option 2 Taping
1500 Units/Reel
SL(T1)
Surface Mount (Low Profile) Lead Forming– With Option 1 Taping
1500 Units/Reel
SL(T2)
Surface Mount (Low Profile) Lead Forming – With Option 2 Taping
1500 Units/Reel
SLM(T1)
Surface Mount (Gullwing) Lead Forming– With Option 1 Taping
1500 Units/Reel
SLM(T2)
Surface Mount (Gullwing) Lead Forming – With Option 2 Taping
1500 Units/Reel
CT Micro
Proprietary & Confidential
Page 10
Rev 1
Jun, 2018
CT521-1GB
DC DIP Phototransistor Optocoupler
Carrier Tape Specifications Dimensions in mm unless otherwise stated
Option S(T1) & SL(T1)
Option S(T2) & SL(T2)
CT Micro
Proprietary & Confidential
Page 11
Rev 1
Jun, 2018
CT521-1GB
DC DIP Phototransistor Optocoupler
Option SLM(T1)
Option SLM(T2)
CT Micro
Proprietary & Confidential
Page 12
Rev 1
Jun, 2018
CT521-1GB
DC DIP Phototransistor Optocoupler
Wave soldering (JEDEC22A111 compliant)
One time soldering is recommended within the condition of temperature.
Temperature: 260+0/-5˚C.
Time: 10 sec.
Preheat temperature:25 to 140˚C.
Preheat time: 30 to 80 sec.
Hand soldering by soldering iron
Allow single lead soldering in every single process.
One time soldering is recommended. Temperature: 350+0/-5˚C
Time: 3 sec max.
CT Micro
Proprietary & Confidential
Page 13
Rev 1
Jun, 2018
CT521-1GB
DC DIP Phototransistor Optocoupler
Reflow Profile
Profile Feature
Pb-Free Assembly Profile
Temperature Min. (Tsmin)
150°C
Temperature Max. (Tsmax)
200°C
Time (ts) from (Tsmin to Tsmax)
60-120 seconds
Ramp-up Rate (tL to tP)
3°C/second max.
Liquidous Temperature (TL)
217°C
Time (tL) Maintained Above (TL)
60 – 150 seconds
Peak Body Package Temperature
260°C +0°C / -5°C
Time (tP) within 5°C of 260°C
30 seconds
Ramp-down Rate (TP to TL)
6°C/second max
Time 25°C to Peak Temperature
8 minutes max.
CT Micro
Proprietary & Confidential
Page 14
Rev 1
Jun, 2018
CT521-1GB
DC DIP Phototransistor Optocoupler
DISCLAIMER
CT MICRO RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. CT MICRO DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
______________________________________________________________________________________
DISCOLORATION MIGHT OCCUR ON THE PACKAGE SURFACE AFTER SOLDERING, REFLOW OR LONG
TERM USE. THIS DOES NOT IMPACT THE PRODUCT PERFORMANCE NOR THE PRODUCT RELIABILITY.
CT MICRO ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL OF CT MICRO INTERNATIONAL CORPORATION.
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical
support device or system whose failure to perform
implant into the body, or (b) support or sustain life,
can be reasonably expected to cause the failure of
or (c) whose failure to perform when properly used
the life support device or system, or to affect its
in accordance with instruction for use provided in
safety or effectiveness.
the labelling, can be reasonably expected to result
in significant injury to the user.
CT Micro
Proprietary & Confidential
Page 15
Rev 1
Jun, 2018
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