CT521GB

CT521-1GB DC DIP Phototransistor Optocoupler Features Description  High isolation 5300 VRMS The CT521-1GB consists of a photo transistor  DC input with transistor output  Operating temperature range - 55 °C to 125 °C  RoHS compliance  REACH compliance Applications  Halogen free  Switch mode power supplies  Regulatory Approvals  Computer peripheral interface  UL - UL1577 (Pending Approval)  Microprocessor system interface  VDE - EN60747-5-5 (Pending Approval)  CQC – GB4943.1, GB8898 (Pending Approval)  IEC60065, IEC60950 (Pending Approval) optically coupled to a gallium arsenide Infraredemitting diode in a DIP package. Package Outline Schematic CT521-1 CT Micro Proprietary & Confidential Page 1 Rev 1 Jun, 2018 CT521-1GB DC DIP Phototransistor Optocoupler Absolute Maximum Rating at 25oC Symbol Parameters Ratings Units VISO Isolation voltage 5300 VRMS PTOT Total power dissipation 200 mW TOPR Operating temperature -55 ~ +125 oC TSTG Storage temperature -55 ~ +150 oC TSOL Soldering temperature 260 oC Forward current 60 mA 1000 mA 6 V Notes Emitter IF IF(TRANS) Peak transient current (≤1μs P.W,300pps) VR Reverse voltage PD Emitter power dissipation 100 mW Detector power dissipation 150 mW BVCEO Collector-Emitter Breakdown Voltage 80 V BVECO Emitter-Collector Breakdown Voltage 7 V Collector Current 80 mA Detector PC IC CT Micro Proprietary & Confidential Page 2 Rev 1 Jun, 2018 CT521-1GB DC DIP Phototransistor Optocoupler Electrical Characteristics T A = 25°C (unless otherwise specified) Emitter Characteristics Symbol Parameters Test Conditions Min Typ Max Units VF Forward voltage IF=10mA - 1.25 1.4 V IR Reverse Current VR = 6V - - 5 µA Input Capacitance f= 1MHz - 30 - pF Min Typ Max Units CIN Notes Detector Characteristics Symbol Parameters Test Conditions BVCEO Collector-Emitter Breakdown IC= 100µA 55 - - V BVECO Emitter-Collector Breakdown IE= 100µA 7 - - V VCE= 24V, IF=0mA - - 100 nA VCE= 24V, IF=0mA,Ta = 85˚C - - 50 µA Test Conditions Min Typ Max Units IF= 5mA, VCE= 5V 100 - 600 % IF= 1mA, VCE= 0.4V 30 - - % IF= 1mA, IC= 0.2mA - - 0.4 V 5x1010 - - Ω - 0.25 1 pF Min Typ Max Units ICEO Notes Collector-Emitter Dark Current Transfer Characteristics Symbol CTR Parameters Notes Current Transfer Ratio Collector-Emitter Saturation VCE(SAT) Voltage RIO Isolation Resistance VIO= 500VDC CIO Isolation Capacitance f= 1MHz Switching Characteristics Symbol Parameters tr Rise Time tf Fall Time ton Turn-on time toff Turn-off time Test Conditions - 16 IC= 2mA, VCE= 2V - 16 RL= 100Ω - 20 - 20 Notes µs µs CT Micro Proprietary & Confidential Page 3 Rev 1 Jun, 2018 CT521-1GB DC DIP Phototransistor Optocoupler Typical Characteristic Curves CT Micro Proprietary & Confidential Page 4 Rev 1 Jun, 2018 CT521-1GB DC DIP Phototransistor Optocoupler CT Micro Proprietary & Confidential Page 5 Rev 1 Jun, 2018 CT521-1GB DC DIP Phototransistor Optocoupler Package Dimension Dimensions in mm unless otherwise stated Standard DIP – Through Hole Gullwing (400mil) Lead Forming – Through Hole (M Type) CT Micro Proprietary & Confidential Page 6 Rev 1 Jun, 2018 CT521-1GB DC DIP Phototransistor Optocoupler Surface Mount Lead Forming (S Type) Surface Mount (Low Profile) Lead Forming (SL Type) CT Micro Proprietary & Confidential Page 7 Rev 1 Jun, 2018 CT521-1GB DC DIP Phototransistor Optocoupler Surface Mount (Gullwing) Lead Forming (SLM Type) CT Micro Proprietary & Confidential Page 8 Rev 1 Jun, 2018 CT521-1GB DC DIP Phototransistor Optocoupler Recommended Solder Mask Dimensions in mm unless otherwise stated Surface Mount Lead Forming & Surface Mount (Low Profile) Lead Forming Surface Mount (Gullwing) Lead Forming Marking Information CT 521GB VYWWK Note: CT 521-1 GB V Y WW K : Denotes “CT Micro” : Part Number : CTR Rank : VDE Safety Option ( V or none) : Fiscal Year : Work Week : Manufacturing Code CT Micro Proprietary & Confidential Page 9 Rev 1 Jun, 2018 CT521-1GB DC DIP Phototransistor Optocoupler Ordering Information CT521-1GB(V)(W)(Y) CT 521-1 GB : Denotes “CT Micro” : Part Number : CTR Rank V W Y : VDE Safety Option( V or none) : Lead form option (S, SL, SLM, M or none) : Tape and reel option (T1, T2 or none ) Option Description Quantity None Standard 4 Pin DIP 100 Units/Tube M Gullwing (400mil) Lead Forming 100 Units/Tube S(T1) Surface Mount Lead Forming – With Option 1 Taping 1500 Units/Reel S(T2) Surface Mount Lead Forming – With Option 2 Taping 1500 Units/Reel SL(T1) Surface Mount (Low Profile) Lead Forming– With Option 1 Taping 1500 Units/Reel SL(T2) Surface Mount (Low Profile) Lead Forming – With Option 2 Taping 1500 Units/Reel SLM(T1) Surface Mount (Gullwing) Lead Forming– With Option 1 Taping 1500 Units/Reel SLM(T2) Surface Mount (Gullwing) Lead Forming – With Option 2 Taping 1500 Units/Reel CT Micro Proprietary & Confidential Page 10 Rev 1 Jun, 2018 CT521-1GB DC DIP Phototransistor Optocoupler Carrier Tape Specifications Dimensions in mm unless otherwise stated Option S(T1) & SL(T1) Option S(T2) & SL(T2) CT Micro Proprietary & Confidential Page 11 Rev 1 Jun, 2018 CT521-1GB DC DIP Phototransistor Optocoupler Option SLM(T1) Option SLM(T2) CT Micro Proprietary & Confidential Page 12 Rev 1 Jun, 2018 CT521-1GB DC DIP Phototransistor Optocoupler Wave soldering (JEDEC22A111 compliant) One time soldering is recommended within the condition of temperature. Temperature: 260+0/-5˚C. Time: 10 sec. Preheat temperature:25 to 140˚C. Preheat time: 30 to 80 sec. Hand soldering by soldering iron Allow single lead soldering in every single process. One time soldering is recommended. Temperature: 350+0/-5˚C Time: 3 sec max. CT Micro Proprietary & Confidential Page 13 Rev 1 Jun, 2018 CT521-1GB DC DIP Phototransistor Optocoupler Reflow Profile Profile Feature Pb-Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (ts) from (Tsmin to Tsmax) 60-120 seconds Ramp-up Rate (tL to tP) 3°C/second max. Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60 – 150 seconds Peak Body Package Temperature 260°C +0°C / -5°C Time (tP) within 5°C of 260°C 30 seconds Ramp-down Rate (TP to TL) 6°C/second max Time 25°C to Peak Temperature 8 minutes max. CT Micro Proprietary & Confidential Page 14 Rev 1 Jun, 2018 CT521-1GB DC DIP Phototransistor Optocoupler DISCLAIMER CT MICRO RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. CT MICRO DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. ______________________________________________________________________________________ DISCOLORATION MIGHT OCCUR ON THE PACKAGE SURFACE AFTER SOLDERING, REFLOW OR LONG TERM USE. THIS DOES NOT IMPACT THE PRODUCT PERFORMANCE NOR THE PRODUCT RELIABILITY. CT MICRO ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL OF CT MICRO INTERNATIONAL CORPORATION. 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical support device or system whose failure to perform implant into the body, or (b) support or sustain life, can be reasonably expected to cause the failure of or (c) whose failure to perform when properly used the life support device or system, or to affect its in accordance with instruction for use provided in safety or effectiveness. the labelling, can be reasonably expected to result in significant injury to the user. CT Micro Proprietary & Confidential Page 15 Rev 1 Jun, 2018