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CY14B101K-SP25XC

CY14B101K-SP25XC

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    SSOP48_300MIL

  • 描述:

    IC NVSRAM 1MBIT PARALLEL 48SSOP

  • 数据手册
  • 价格&库存
CY14B101K-SP25XC 数据手册
CY14B101K 1 Mbit (128K x 8) nvSRAM With Real Time Clock Features ❐ ❐ ■ Data integrity of Cypress nvSRAM combined with full featured Real Time Clock (RTC) ❐ Low power, 350 nA RTC current ❐ Capacitor or battery backup for RTC Watchdog timer ■ Clock alarm with programmable interrupts ■ Hands off automatic STORE on power down with only a small capacitor ■ STORE to QuantumTrap™ initiated by software, device pin, or on power down ■ RECALL to SRAM initiated by software or on power up ■ Infinite READ, WRITE, and RECALL cycles ■ High reliability Single 3V operation with tolerance of +20%, –10% ■ Commercial and industrial temperature ■ 48-Pin SSOP package (ROHS compliant) Functional Description The Cypress CY14B101K combines a 1 Mbit nonvolatile static RAM with a full featured real time clock in a monolithic integrated circuit. The embedded nonvolatile elements incorporate QuantumTrap technology producing the world’s most reliable nonvolatile memory. The SRAM is read and written an infinite number of times, while independent, nonvolatile data resides in the nonvolatile elements. The Real Time Clock function provides an accurate clock with leap year tracking and a programmable high accuracy oscillator. The alarm function is programmable for one time alarm or periodic seconds, minutes, hours, or days. There is also a programmable watchdog timer for process control. de d fo rN ■ ■ ig ns Pin compatible with STK17TA8 es ■ D 25 ns, 35 ns, and 45 ns access times ew ■ Endurance to 200K cycles Data retention: 20 years at 55°C Logic Block Diagram VCC en QuantumTrap 1024 x 1024 DQ 2 ot N DQ 4 DQ 5 DQ 6 STATIC RAM ARRAY 1024 X 1024 POWER CONTROL STORE RECALL VRTCbat VRTCcap STORE/ RECALL CONTROL HSB SOFTWARE DETECT A15 - A 0 COLUMN IO COLUMN DEC INPUT BUFFERS DQ 1 DQ 3 m om ec R DQ 0 ROW DECODER A5 A6 A7 A8 A9 A 12 A 13 A 14 A 15 A 16 VCAP RTC x1 x2 MUX A16 - A 0 INT A 0 A 1 A 2 A 3 A 4 A 10 A 11 DQ 7 OE CE WE Cypress Semiconductor Corporation Document Number: 001-06401 Rev. *J • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised November 26, 2009 [+] Feedback CY14B101K Contents fo rN ew D es ig ns Interrupts ..................................................................... 10 Interrupt Register ........................................................ 10 Flags Register ............................................................. 10 Maximum Ratings ............................................................. 16 Operating Range .............................................................. 16 DC Electrical Characteristics .......................................... 16 Data Retention and Endurance ....................................... 17 Capacitance ...................................................................... 17 Thermal Resistance ......................................................... 17 AC Test Conditions .......................................................... 17 AC Switching Characteristics ......................................... 18 AC Switching Characteristics (continued) ..................... 19 AutoStore or Power Up RECALL .................................... 20 Software Controlled STORE/RECALL Cycles ................ 21 Hardware STORE Cycle ................................................... 22 Soft Sequence Commands .............................................. 22 RTC Characteristics ......................................................... 23 Truth Table For SRAM Operations ................................. 23 Part Numbering Nomenclature ....................................... 24 Ordering Information ....................................................... 25 Package Diagrams ........................................................... 26 Document History Page ................................................... 27 Sales, Solutions, and Legal Information ........................ 29 Worldwide Sales and Design Support ......................... 29 Products ...................................................................... 29 N ot R ec om m en de d Features .............................................................................. 1 Functional Description ....................................................... 1 Logic Block Diagram .......................................................... 1 Contents .............................................................................. 2 Pin Configurations ............................................................. 3 Device Operation ................................................................ 4 SRAM READ ................................................................. 4 SRAM WRITE ............................................................... 4 AutoStore® Operation ................................................... 4 Hardware STORE (HSB) Operation .............................. 4 Hardware RECALL (Power Up) ..................................... 5 Software STORE ........................................................... 5 Software RECALL ......................................................... 5 Data Protection ............................................................. 5 Noise Considerations .................................................... 5 Low Average Active Power ........................................... 6 Best Practices ............................................................... 6 Real Time Clock Operation ................................................ 8 nvTIME Operation ......................................................... 8 Clock Operations ........................................................... 8 Reading the Clock ......................................................... 8 Setting the Clock ........................................................... 8 Backup Power ............................................................... 8 Stopping and Starting the Oscillator .............................. 8 Calibrating the Clock ..................................................... 9 Alarm ............................................................................. 9 Watchdog Timer ............................................................ 9 Power Monitor ............................................................. 10 Document Number: 001-06401 Rev. *J Page 2 of 29 [+] Feedback CY14B101K Pin Configurations Figure 1. 48-Pin SSOP V CAP 1 48 V CC A 16 2 47 A 14 A 15 3 46 HSB 4 45 5 44 WE A 13 A6 6 43 A5 7 42 INT 8 41 NC 11 NC V SS 12 NC 14 V RTCbat 15 DQ0 16 A3 17 A2 18 DQ1 21 DQ2 x1 23 x2 24 DQ0 – DQ7 Input Output NC No Connect NC V SS 35 NC V RTCcap ew d de en NC 36 34 m I/O Type Input (Not To Scale) 22 A 11 NC 33 DQ 6 32 OE A 10 31 30 CE 29 DQ7 28 DQ5 27 DQ4 26 DQ3 25 V CC Description Address Inputs. Used to select one of the 131,072 bytes of the nvSRAM. Bidirectional Data I/O Lines. Used as input or output lines depending on operation om Alt 38 rN 19 20 A0 – A16 Top View 37 fo A1 Table 1. Pin Definitions Pin Name 48-SSOP 13 A0 40 39 A9 NC es 9 10 D A4 NC A8 ig ns A 12 A7 No Connects. This pin is not connected to the die Input CE E Input Chip Enable Input, Active LOW. When LOW, selects the chip. When HIGH, deselects the chip. OE G Input Output Enable, Active LOW. The active low OE input enables the data output buffers during READ cycles. Deasserting OE high causes the I/O pins to tri-state. X2 R ot Output N X1 Write Enable Input, Active LOW. When the chip is enabled and WE is LOW, data on the I/O pins is written to the specific address location. ec W WE Input Crystal Connection Drives crystal on start up. Crystal Connection for 32.768 kHz crystal. VRTCcap Power Supply Capacitor Supplied Backup RTC Supply Voltage. (Left unconnected if VRTCbat is used) VRTCbat Power Supply Battery Supplied Backup RTC Supply Voltage. (Left unconnected if VRTCcap is used) INT Output Interrupt Output. Program to respond to the clock alarm, the watchdog timer, and the power monitor. Programmable to either active HIGH (push or pull) or LOW (open drain). VSS Ground Ground for the Device. Must be connected to ground of the system. VCC HSB VCAP Power Supply Power Supply Inputs to the Device. Input Output Hardware Store Busy. When LOW this output indicates a Hardware Store is in progress. When pulled LOW external to the chip it initiates a nonvolatile STORE operation. A weak internal pull up resistor keeps this pin HIGH if not connected (connection optional). Power Supply AutoStore™ Capacitor. Supplies power to nvSRAM during power loss to store data from SRAM to nonvolatile elements. Document Number: 001-06401 Rev. *J Page 3 of 29 [+] Feedback CY14B101K Device Operation automatically disconnects the VCAP pin from VCC. A STORE operation is initiated with power provided by the VCAP capacitor. The CY14B101K nvSRAM consists of two functional components paired in the same physical cell. The components are SRAM memory cell and a nonvolatile QuantumTrap cell. The SRAM memory cell operates as a standard fast static RAM. Data in the SRAM is transferred to the nonvolatile cell (the STORE operation), or from the nonvolatile cell to SRAM (the RECALL operation). Using this unique architecture, all cells are stored and recalled in parallel. During the STORE and RECALL operations, SRAM READ and WRITE operations are inhibited. The CY14B101K suppots infinite reads and writes similar to a typical SRAM. In addition, it provides infinite RECALL operations from the nonvolatile cells and up to 200K STORE operations. Figure 2. AutoStore Mode V CC 0.1UF 10k Ohm ig ns V CAP WE es See the “Truth Table For SRAM Operations” on page 23 for a complete description of read and write modes. fo rN ew D SRAM READ Figure 2 shows the proper connection of the storage capacitor (VCAP) for automatic store operation. Refer to DC Electrical Characteristics on page 16 for the size of the VCAP. The voltage on the VCAP pin is driven to 5V by a charge pump internal to the chip. A pull up should be placed on WE to hold it inactive during power up. This pull up is only effective if the WE signal is tri-state during power up. Many MPUs tri-state their controls on power up. Verify this when using the pull up. When the nvSRAM comes out of power-on-recall, the MPU must be active or the WE held inactive until the MPU comes out of reset. d The CY14B101K performs a READ cycle whenever CE and OE are LOW while WE and HSB are HIGH. The address specified on pins A0-16 determines which of the 131,072 data bytes are accessed. When the READ is initiated by an address transition, the outputs are valid after a delay of tAA (see Figure 8 on page 18). If the READ is initiated by CE or OE, the outputs are valid at tACE or at tDOE, whichever is later (see Figure 9 on page 18). The data outputs repeatedly respond to address changes within the tAA access time without the need for transitions on any control input pins. This remains valid until another address change or until CE or OE is brought HIGH, or WE or HSB is brought LOW. V CC V CAP de SRAM WRITE R AutoStore® Operation ec om m en A WRITE cycle is performed whenever CE and WE are LOW and HSB is HIGH. The address inputs must be stable before entering the WRITE cycle and must remain stable until either CE or WE go HIGH at the end of the cycle. The data on the common I/O pins DQ0–7 is written into the memory if the data is valid tSD before the end of a WE controlled WRITE or before the end of an CE controlled WRITE. Keep OE HIGH during the entire WRITE cycle to avoid data bus contention on common I/O lines. If OE is left LOW, internal circuitry turns off the output buffers tHZWE after WE goes LOW. N ot The CY14B101K stores data to nvSRAM using one of three storage operations: 1. Hardware Store activated by HSB 2. Software Store activated by an address sequence 3. AutoStore on device power down AutoStore operation is a unique feature of QuantumTrap technology and is enabled by default on the CY14B101K. During normal operations, the device draws current from VCC to charge a capacitor connected to the VCAP pin. This stored charge is used by the chip to perform a single STORE operation. If the voltage on the VCC pin drops below VSWITCH, the part Document Number: 001-06401 Rev. *J To reduce unnecessary nonvolatile stores, AutoStore and Hardware Store operations are ignored unless at least one WRITE operation takes place since the most recent STORE or RECALL cycle. Software initiated STORE cycles are performed regardless of whether a WRITE operation took place. Monitor the HSB signal by the system to detect if an AutoStore cycle is in progress. Hardware STORE (HSB) Operation The CY14B101K provides the HSB pin for controlling and acknowledging the STORE operations. Use the HSB pin to request a hardware STORE cycle. When the HSB pin is driven LOW, the CY14B101K conditionally initiates a STORE operation after tDELAY. An actual STORE cycle only begins if a WRITE to the SRAM has taken place since the last STORE or RECALL cycle. The HSB pin also acts as an open drain driver that is internally driven LOW to indicate a busy condition while the STORE (initiated by any means) is in progress. This pin is externally pulled up if it is used to drive other inputs. Page 4 of 29 [+] Feedback CY14B101K SRAM READ and WRITE operations that are in progress when HSB is driven LOW by any means are given time to complete before the STORE operation is initiated. After HSB goes LOW, the CY14B101K continues SRAM operations for tDELAY. During tDELAY, multiple SRAM READ operations take place. If a WRITE is in progress when HSB is pulled LOW, it is allowed a time, tDELAY, to complete. However, any SRAM WRITE cycles requested after HSB goes LOW are inhibited until HSB returns HIGH. The software sequence is clocked with CE controlled READs or OE controlled READs. After the sixth address in the sequence is entered, the STORE cycle commences and the chip is disabled. It is important to use read cycles and not write cycles in the sequence, although it is not necessary that OE be LOW for a valid sequence. After the tSTORE cycle time is fulfilled, the SRAM is activated again for READ and WRITE operation. During any STORE operation, regardless of how it is initiated, the CY14B101K continues to drive the HSB pin LOW, releasing it only when the STORE is complete. After completing the STORE operation, the CY14B101K remains disabled until the HSB pin returns HIGH. Leave the HSB unconnected if it is not used. Data is transferred from the nonvolatile memory to the SRAM by a software address sequence. A software RECALL cycle is initiated with a sequence of READ operations in a manner similar to the software STORE initiation. To initiate the RECALL cycle, the following sequence of CE controlled READ operations are performed: 1. Read Address 0x4E38 Valid READ 2. Read Address 0xB1C7 Valid READ 3. Read Address 0x83E0 Valid READ 4. Read Address 0x7C1F Valid READ 5. Read Address 0x703F Valid READ 6. Read Address 0x4C63 Initiate RECALL Cycle ig ns Software RECALL es Hardware RECALL (Power Up) ew D During power up or after any low power condition (VCC < VSWITCH), an internal RECALL request is latched. When VCC again exceeds the sense voltage of VSWITCH, a RECALL cycle automatically initiates and takes tHRECALL to complete. Internally, RECALL is a two step procedure. First, the SRAM data is cleared and then the nonvolatile information is transferred into the SRAM cells. After the tRECALL cycle time, the SRAM is again ready for READ and WRITE operations. The RECALL operation does not alter the data in the nonvolatile elements. fo Data Protection de d Data is transferred from the SRAM to the nonvolatile memory by a software address sequence. The CY14B101K software STORE cycle is initiated by executing sequential CE controlled READ cycles from six specific address locations in exact order. During the STORE cycle, an erase of the previous nonvolatile data is first performed followed by a program of the nonvolatile elements. After a STORE cycle is initiated, further READs and WRITEs are inhibited until the cycle is completed. rN Software STORE m en Because a sequence of READs from specific addresses is used for STORE initiation, it is important that no other READ or WRITE accesses intervene in the sequence. If it intervenes, the sequence is aborted and no STORE or RECALL takes place. Noise Considerations The CY14B101K is a high speed memory and must have a high frequency bypass capacitor of approximately 0.1 µF connected between VCC and VSS, using leads and traces that are as short as possible. As with all high speed CMOS ICs, careful routing of power, ground, and signals reduce circuit noise. N ot R ec om To initiate the software STORE cycle, the following READ sequence are performed: 1. Read Address 0x4E38 Valid READ 2. Read Address 0xB1C7 Valid READ 3. Read Address 0x83E0 Valid READ 4. Read Address 0x7C1F Valid READ 5. Read Address 0x703F Valid READ 6. Read Address 0x8FC0 Initiate STORE cycle The CY14B101K protects data from corruption during low voltage conditions by inhibiting all externally initiated STORE and WRITE operations. The low voltage condition is detected when VCC is less than VSWITCH. If the CY14B101K is in a WRITE mode (both CE and WE LOW) at power up, after a RECALL or after a STORE, the WRITE is inhibited until a negative transition on CE or WE is detected. This protects against inadvertent writes during power up or brownout conditions. Document Number: 001-06401 Rev. *J Page 5 of 29 [+] Feedback CY14B101K Low Average Active Power Best Practices CMOS technology provides the CY14B101K the benefit of drawing significantly less current when it is cycled at times longer than 50 ns. Figure 3 shows the relationship between ICC and READ/WRITE Cycle Time. The worst case current consumption is shown for commercial temperature range, VCC = 3.6V, and chip enable at maximum frequency. Only standby current is drawn when the chip is disabled. nvSRAM products have been used effectively for over 15 years. While ease-of-use is one of the product’s main system values, experience gained working with hundreds of applications has resulted in the following suggestions as best practices: ■ The nonvolatile cells in an nvSRAM are programmed on the test floor during final test and quality assurance. Incoming inspection routines at customer or contract manufacturer’s sites sometimes reprograms these values. Final NV patterns are typically repeating patterns of AA, 55, 00, FF, A5, or 5A. The end product’s firmware should not assume that an NV array is in a set programmed state. Routines that check memory content values to determine first time system configuration and cold or warm boot status, must always program a unique NV pattern (for example, complex 4-byte pattern of 46 E6 49 53 hex or more random bytes) as part of the final system manufacturing test to ensure these system routines work consistently. ■ The OSCEN bit in the Calibration register at 0x1FFF8 should be set to 1 to preserve battery life when the system is in storage (see Stopping and Starting the Oscillator on page 8). ■ The Vcap value specified in this data sheet includes a minimum and a maximum value size. The best practice is to meet this requirement and not exceed the maximum Vcap value because the higher inrush currents may reduce the reliability of the internal pass transistor. Customers who want to use a larger Vcap value to make sure there is extra store charge should discuss their Vcap size selection with Cypress. The duty cycle of chip enable ■ The overall cycle rate for accesses ■ The ratio of READs to WRITEs ■ The operating temperature ■ The VCC level ■ I/O loading ew N ot R ec om m en de d fo rN Figure 3. Current versus Cycle Time D es ■ ig ns The overall average current drawn by the CY14B101K depends on the following items: Document Number: 001-06401 Rev. *J Page 6 of 29 [+] Feedback CY14B101K Table 2. Mode Selection WE OE A15 – A0 Mode I/O Power H X X X Not Selected Output High Z Standby L H L X READ SRAM Output Data Active L L X X WRITE SRAM Input Data Active L H L 0x4E38 0xB1C7 0x83E0 0x7C1F 0x703F 0x8FC0 Read SRAM Read SRAM Read SRAM Read SRAM Read SRAM Nonvolatile STORE Output Data Output Data Output Data Output Data Output Data Output High Z Active ICC2[1, 2, 3] L H L 0x4E38 0xB1C7 0x83E0 0x7C1F 0x703F 0x4C63 Read SRAM Read SRAM Read SRAM Read SRAM Read SRAM Nonvolatile RECALL Output Data Output Data Output Data Output Data Output Data Output High Z Active[1, 2, 3] N ot R ec om m en de d fo rN ew D es ig ns CE Notes 1. The six consecutive address locations are in the order listed. WE is HIGH during all six cycles to enable a nonvolatile cycle. 2. While there are 17 address lines on the CY14B101K, only the lower 16 lines are used to control software modes. 3. O state depends on the state of OE. The I/O table shown is based on OE Low. Document Number: 001-06401 Rev. *J Page 7 of 29 [+] Feedback CY14B101K Real Time Clock Operation The clock oscillator uses very little current to maximize the backup time available from the backup source. Regardless of clock operation with the primary source removed, the data stored in nvSRAM is secure, as it is stored in the nonvolatile elements when power was lost. nvTIME Operation The CY14B101K offers internal registers that contain clock, alarm, watchdog, interrupt, and control functions. RTC registers use the last 16 address locations of the SRAM. Internal double buffering of the clock and the clock or timer information registers prevents accessing transitional internal clock data during a READ or WRITE operation. Double buffering also circumvents disrupting normal timing counts or clock accuracy of the internal clock while accessing clock data. Clock and Alarm Registers store data in BCD format. During backup operation, the CY14B101K consumes a maximum of 300 nA at 2V. The user should choose capacitor or battery values according to the application. Table 3. RTC Backup Time The RTC register addresses for CY14B101K range from 0x1FFF0 to 0x1FFFF. Refer to RTC Register Map[5, 6] on page 12 and Register Map Detail on page 13 for detailed description. es Capacitor Value 0.1F 0.47F 1.0F rN ew Using a capacitor has the obvious advantage of recharging the backup source each time the system is powered up. If a battery is used, use a 3V lithium; the CY14B101K only sources current from the battery when the primary power is removed. However, the battery is not recharged at any time by the CY14B101K. The battery capacity is chosen for total anticipated cumulative downtime required over the life of the system. fo Stopping and Starting the Oscillator The OSCEN bit in the calibration register at 0x1FFF8 controls the enable and disable of the oscillator. This active LOW bit is nonvolatile and is shipped to customers in the “enabled” (set to 0) state. To preserve the battery life when the system is in storage, OSCEN bit must be set to ‘1’. This turns off the oscillator circuit, extending the battery life. If the OSCEN bit goes from disabled to enabled, it takes approximately 5 seconds (10 seconds maximum) for the oscillator to start. d Reading the Clock Backup Time 72 hours 14 days 30 days D Clock Operations The clock registers maintain time up to 9,999 years in one second increments. The user sets the time to any calendar time and the clock automatically keeps track of days of the week, month, leap years, and century transitions. There are eight registers dedicated to the clock functions that are used to set time with a WRITE cycle and to READ time during a READ cycle. These registers contain the Time of Day in BCD format. Bits defined as ‘0’ are currently not used and are reserved for future use by Cypress. ig ns Backup time values, based on maximum current specifications, are shown in the following table. Nominal times are approximately three times longer. m en de The double buffered RTC register structure reduces the chance of reading incorrect data from the clock. The user should stop internal updates to the CY14B101K time keeping registers before reading clock data, to prevent reading of data in transition. Stopping the internal register updates does not affect clock accuracy. R Setting the Clock ec om The updating process is stopped by writing a ‘1’ to the read bit ‘R’ (in the flags register at 0x1FFF0), and does not restart until a ‘0’ is written to the read bit. The RTC registers are then read while the internal clock continues to run. After a ‘0’ is written to the read bit (‘R’), all CY14B101K registers are simultaneously updated within 20 ms. N ot Setting the write bit ‘W’ (in the flags register at 0x1FFF0) to a ‘1’ stops updates to the time keeping registers and enables the time to be set. The correct day, date, and time are then written into the registers in 24 hour BCD format. The time written is referred to as the ‘Base Time’. This value is stored in nonvolatile registers and used in calculation of the current time. Resetting the WRITE bit to ‘0’ transfers those values to the actual clock counters, after which the clock resumes normal operation. Backup Power The RTC in the CY14B101K is intended for permanently powered operations. Either the VRTCcap or VRTCbat pin is connected depending on whether a capacitor or battery is chosen for the application. When the primary power, VCC, fails and drops below VSWITCH, the device switches to the backup power supply. Document Number: 001-06401 Rev. *J While system power is off, if the voltage on the backup supply (VRTCcap or VRTCbat) falls below their respective minimum level, the oscillator may fail.The CY14B101K has the ability to detect oscillator failure when system power is restored. This is recorded in the OSCF (Oscillator Failed bit) of the Flags register at address 0x1FFF0. When the device is powered on (VCC goes above VSWITCH), the OSCEN bit is checked for “enabled” status. If the OSCEN bit is enabled and the oscillator is not active within the first 5 ms, the OSCF bit is set to “1”. The system must check for this condition and then write ‘0’ to clear the flag. Note that in addition to setting the OSCF flag bit, the time registers are reset to the “Base Time” (see “Setting the Clock” on page 8), which is the value last written to the time keeping registers. The Control or Calibration registers and the OSCEN bit are not affected by the “oscillator failed” condition. The value of OSCF must be reset to ‘0’ when the time registers are written for the first time. This initializes the state of this bit which may have become set when the system was first powered on. To reset OSCF, set the write bit “W” (in the flags register at 0x1FFF0) to “1” to enable writes to the Flag register. Write a “0” to the OSCF bit and then reset the write bit to “0” to disable writes. Page 8 of 29 [+] Feedback CY14B101K Calibrating the Clock the match process. Depending on the match bits, the alarm occurs as specifically as once a month or as frequently as once every minute. Selecting none of the match bits (all 1s) indicates that no match is required and therefore, alarm is disabled. Selecting all match bits (all 0s) causes an exact time and date match. The RTC is driven by a quartz controlled oscillator with a nominal frequency of 32.768 kHz. Clock accuracy depends on the quality of the crystal and calibration. The crystal oscillators typically have an error of +20ppm to +35ppm. However, CY14B101K employs a calibration circuit that improves the accuracy to +1/–2 ppm at 25°C. This implies an error of +2.5 seconds to -5 seconds per month. There are two ways to detect an alarm event: by reading the AF flag or monitoring the INT pin. The AF flag in the flags register at 0x1FFF0 indicates that a date or time match has occurred. The AF bit is set to “1” when a match occurs. Reading the flags or control register clears the alarm flag bit (and all others). A hardware interrupt pin may also be used to detect an alarm event. es Note CY14B101K requires the alarm match bit for seconds (0x1FFF2 - D7) to be set to ‘0’ for proper operation of Alarm Flag and Interrupt. ew D Alarm registers are not nonvolatile and, therefore, need to be reinitialized by software on power up. To set, clear or enable an alarm, set the ‘W’ bit (in Flags Register - 0x1FFF0) to ‘1’ to enable writes to Alarm Registers. After writing the alarm value, clear the ‘W’ bit back to “0” for the changes to take effect. rN Watchdog Timer fo The Watchdog Timer is a free running down counter that uses the 32 Hz clock (31.25 ms) derived from the crystal oscillator. The oscillator must be running for the watchdog to function. It begins counting down from the value loaded in the Watchdog Timer register. de d Calibration occurs within a 64 minute cycle. The first 62 minutes in the cycle may, once per minute, have one second shortened by 128 or lengthened by 256 oscillator cycles. If a binary ‘1’ is loaded into the register, only the first two minutes of the 64 minute cycle is modified. If a binary 6 is loaded, the first 12 are affected, and so on. Therefore, each calibration step has the effect of adding 512 or subtracting 256 oscillator cycles for every 125,829,120 actual oscillator cycles, that is, 4.068 or –2.034 ppm of adjustment per calibration step in the Calibration register. ig ns The calibration circuit adds or subtracts counts from the oscillator divider circuit to achieve this accuracy. The number of pulses that are suppressed (subtracted, negative calibration) or split (added, positive calibration) depends upon the value loaded into the five calibration bits found in Calibration register at 0x1FFF8. The calibration bits occupy the five lower order bits in the Calibration register. These bits are set to represent any value between ‘0’ and 31 in binary form. Bit D5 is a sign bit, where a ‘1’ indicates positive calibration and a ‘0’ indicates negative calibration. Adding counts speeds the clock up and subtracting counts slows the clock down. If a binary ‘1’ is loaded into the register, it corresponds to an adjustment of 4.068 or –2.034 ppm offset in oscillator error, depending on the sign. om m en To determine the required calibration, the CAL bit in the Flags register (0x1FFF0) must be set to ‘1’. This causes the INT pin to toggle at a nominal frequency of 512 Hz. Any deviation measured from the 512 Hz indicates the degree and direction of the required correction. For example, a reading of 512.01024 Hz indicates a +20 ppm error. Hence, a decimal value of –10 (001010b) must be loaded into the Calibration register to offset this error. ec Note Setting or changing the Calibration register does not affect the test output frequency. N Alarm ot R To set or clear CAL, set the write bit “W” (in the flags register at 0x1FFF0) to “1” to enable writes to the Flag register. Write a value to CAL, and then reset the write bit to “0” to disable writes. The alarm function compares user programmed values of alarm time and date (stored in the registers 0x1FFF1-5) with the corresponding time of day and date values. When a match occurs, the alarm internal flag (AF) is set and an interrupt is generated on INT pin if Alarm Interrupt Enable (AIE) bit is set. There are four alarm match fields - date, hours, minutes, and seconds. Each of these fields has a match bit that is used to determine if the field is used in the alarm match logic. Setting the match bit to ‘0’ indicates that the corresponding field is used in Document Number: 001-06401 Rev. *J The timer consists of a loadable register and a free running counter. On power up, the watchdog time out value in register 0x1FFF7 is loaded into the Counter Load register. Counting begins on power up and restarts from the loadable value any time the Watchdog Strobe (WDS) bit is set to ‘1’. The counter is compared to the terminal value of ‘0’. If the counter reaches this value, it causes an internal flag and an optional interrupt output. You can prevent the time out interrupt by setting WDS bit to ‘1’ prior to the counter reaching ‘0’. This causes the counter to reload with the watchdog time out value and to be restarted. As long as the user sets the WDS bit prior to the counter reaching the terminal value, the interrupt and WDT flag never occur. New time out values are written by setting the watchdog write bit to ‘0’. When the WDW is ‘0’, new writes to the watchdog time out value bits D5-D0 are enabled to modify the time out value. When WDW is ‘1’, writes to bits D5-D0 are ignored. The WDW function enables a user to set the WDS bit without concern that the watchdog timer value is modified. A logical diagram of the watchdog timer is shown in Figure 4. Note that setting the watchdog time out value to ‘0’ disables the watchdog function. The output of the watchdog timer is the flag bit WDF that is set if the watchdog is allowed to time out. The flag is set upon a watchdog time out and cleared when the user reads the Flags or Control registers. If the watchdog time out occurs, the user also enables an optional interrupt source to drive the INT pin. Page 9 of 29 [+] Feedback CY14B101K two programmable bits, H/L and P/L, determine the behavior of the output pin driver on INT pin. These two bits are located in the Interrupt register and can be used to drive level or pulse mode output from the INT pin. In pulse mode, the pulse width is internally fixed at approximately 200 ms. This mode is intended to reset a host microcontroller. In the level mode, the pin goes to its active polarity until the Flags register is read by the user. This mode is used as an interrupt to a host microcontroller. The control bits are summarized in the following section. Figure 4. Watchdog Timer Block Diagram Clock Divider Oscillator 32,768 KHz 1 Hz 32 Hz Zero Compare Counter WDF Interrupt Register Load Register Watchdog Interrupt Enable - WIE. When set to ‘1’, the watchdog timer drives the INT pin and an internal flag when a watchdog time out occurs. When WIE is set to ‘0’, the watchdog timer only affects the WDF flag in Flags register. ig ns WDS Q D WDW Alarm Interrupt Enable - AIE. When set to ‘1’, the alarm match drives the INT pin and an internal flag. When AIE is set to ‘0’, the alarm match only affects the AF flagin Flags register. es Q Watchdog Register D write to Watchdog Register Power Fail Interrupt Enable - PFE. When set to ‘1’, the power fail monitor drives the pin and an internal flag. When PFE is set to ‘0’, the power fail monitor only affects the PF flag in Flags register. rN Pulse/Level - P/L. When set to a ‘1’ and an interrupt occurs, the INT pin is driven for approximately 200 ms. When P/L is set to a ‘0’, the INT pin is driven high or low (determined by H/L) until the Flags or Control register is read. en de d As described in the “AutoStore® Operation” on page 4, when VSWITCH is reached as VCC decays from power loss, a data store operation is initiated from SRAM to the nonvolatile elements, securing the last SRAM data state. Power is also switched from VCC to the backup supply (battery or capacitor) to operate the RTC oscillator. High/Low - H/L. When set to a ‘1’, the INT pin is active HIGH and the driver mode is push pull. The INT pin drives high only when VCC is greater than VSWITCH. When set to a ‘0’, the INT pin is active LOW and the drive mode is open drain. Active LOW (open drain) is operational even in battery backup mode. fo The CY14B101K provides a power management scheme with power fail interrupt capability. It also controls the internal switch to backup power for the clock and protects the memory from low VCC access. The power monitor is based on an internal band gap reference circuit that compares the VCC voltage to VSWITCH threshold. ew Power Monitor ec om m When operating from the backup source, read and write operations to nvSRAM are inhibited and the clock functions are not available to the user. The clock continues to operate in the background. The updated clock data is available to the user tHRECALL delay after VCC is restored to the device (see “AutoStore or Power Up RECALL” on page 20). Interrupts N ot R The CY14B101K has a Flags register, Interrupt register and Interrupt logic that can signal interrupt to the microcontroller. There are three potential sources for interrupt: watchdog timer, power monitor, and alarm timer. Each of these can be individually enabled to drive the INT pin by appropriate setting in the Interrupt register (0x1FFF6). In addition, each has an associated flag bit in the Flags register (0x1FFF0) that the host processor uses to determine the cause of the interrupt. The INT pin driver has two bits that specify its behavior when an interrupt occurs. An Interrupt is raised only if both a flag is raised by one of the three sources and the respective interrupt enable bit in Interrupts register is enabled (set to ‘1’). After an interrupt source is active, Document Number: 001-06401 Rev. *J When an enabled interrupt source activates the INT pin, an external host reads the Flags registers to determine the cause. Remember that all flags are cleared when the register is read. If the INT pin is programmed for Level mode, then the condition clears and the INT pin returns to its inactive state. If the pin is programmed for Pulse mode, then reading the flag also clears the flag and the pin. The pulse does not complete its specified duration if the Flags register is read. If the INT pin is used as a host reset, then the Flags or Control register is not read during a reset. Flags Register The Flag register has three flag bits: WDF, AF, and PF, which can be used to generate an interrupt. These flags are set by the watchdog timeout, alarm match, or power fail monitor respectively. The processor can either poll this register or enable interrupts to be informed when a flag is set. These flags are automatically reset once the register is read. The flags register is automatically loaded with the value 00h on power up (except for the OSCF bit. See “Stopping and Starting the Oscillator” on page 8.) Page 10 of 29 [+] Feedback CY14B101K Figure 5. Interrupt Block Diagram WDF Watchdog Timer WIE PF Power Monitor VCC P/L Pin Driver PFE INT H/L ig ns VINT VSS es AF Clock Alarm WDF - Watchdog Timer Flag WIE - Watchdog Interrupt Enable PF - Power Fail Flag PFE - Power Fail Enable AF - Alarm Flag AIE - Alarm Interrupt Enable P/L - Pulse Level H/L - High/Low ew D AIE de d fo rN Figure 6. RTC Recommended Component Configuration DQ 0 Y1 = 32.768 kHz RF = 10 MΩ C1 = 0 (install cap footprint, but leave unloaded) C2 = 56 pF + 10% (do not vary from this value) om m A3 A2 en Recommended Values A1 ec Y1 R X1 X2 N ot C2 RF C1 A0 Note 4. Schottky diodes, (VF < 0.4V at IF=100 mA) are recommended at pins A0 - A3 and DQ0 in applications where undershoot exceeds -0.5V. Please see application note AN49947 for further details. Document Number: 001-06401 Rev. *J Page 11 of 29 [+] Feedback CY14B101K Table 4. RTC Register Map[5, 6] Register BCD Format Data [5] D7 D6 0x1FFFF D5 D4 D3 D2 10s Years 0x1FFFE 0 0 0x1FFFD 0 0 0 Years: 00–99 Months Months: 01–12 Day Of Month Day of Month: 01–31 0 0 0x1FFFB 0 0 0x1FFFA 0 0x1FFF9 0 0x1FFF8 OSCEN (0) 0 0x1FFF7 WDS (0) WDW (0) 0x1FFF6 WIE (0) AIE (0) 0x1FFF5 M (1) 0 10s Alarm Date Alarm Day Alarm, Day of Month: 01–31 0x1FFF4 M (1) 0 10s Alarm Hours Alarm Hours Alarm, Hours: 00–23 0x1FFF3 M (1) 10 Alarm Minutes Alarm Minutes Alarm, Minutes: 00–59 0x1FFF2 M (1) 10 Alarm Seconds Alarm, Seconds Alarm, Seconds: 00–59 0 Day of Week: 01–07 Hours: 00–23 10s Minutes Minutes Minutes: 00–59 10s Seconds Seconds Seconds: 00–59 Calibration Values [7] Calibration (00000) es Cal Sign (0) ig ns Hours H/L (1) 0 0 Centuries PF fo AF P/L (0) ew 0 rN PFE (0) D WDT (000000) 10s Centuries WDF Day of Week 10s Hours OSCF 0 CAL (0) W (0) Watchdog [7] Interrupts [7] Centuries: 00–99 R (0) Flags [7] N ot R ec om m en de d 0x1FFF0 0 Function/Range 0x1FFFC 0x1FFF1 0 D0 Years 10s Months 10s Day of Month D1 Notes 5. ( ) designates values shipped from the factory. 6. The unused bits of RTC registers are reserved for future use and should be set to ‘0’. 7. Is a binary value, not a BCD value. Document Number: 001-06401 Rev. *J Page 12 of 29 [+] Feedback CY14B101K Table 5. Register Map Detail Time Keeping - Years D7 D6 0x1FFFF D5 D4 D3 D2 10s Years D1 D0 Years Contains the lower two BCD digits of the year. Lower nibble (four bits) contains the value for years; upper nibble (four bits) contains the value for 10s of years. Each nibble operates from 0 to 9. The range for the register is 0–99. Time Keeping - Months D7 D6 D5 D4 D3 0 0 0 10s Month D2 D1 D0 Months ig ns 0x1FFFE Contains the BCD digits of the month. Lower nibble (four bits) contains the lower digit and operates from 0 to 9; upper nibble (one bit) contains the upper digit and operates from 0 to 1. The range for the register is 1–12. 0 0 D5 D4 D3 10s Day of Month D2 D1 D0 Day of Month D 0x1FFFD D6 es Time Keeping - Date D7 ew Contains the BCD digits for the date of the month. Lower nibble (four bits) contains the lower digit and operates from 0 to 9; upper nibble (two bits) contains the 10s digit and operates from 0 to 3. The range for the register is 1–31. Leap years are automatically adjusted for. D6 D5 D4 0 0 0 0 fo 0x1FFFC D7 rN Time Keeping - Day D3 D2 0 D1 D0 Day of Week de d Lower nibble (three bits) contains a value that correlates to day of the week. Day of the week is a ring counter that counts from 1 to 7 then returns to 1. The user must assign meaning to the day value, because the day is not integrated with the date. Time Keeping - Hours D6 0 0 D5 en D7 D4 D3 D2 10s Hours D1 D0 Hours m 0x1FFFB om Contains the BCD value of hours in 24 hour format. Lower nibble (four bits) contains the lower digit and operates from 0 to 9; upper nibble (two bits) contains the upper digit and operates from 0 to 2. The range for the register is 0–23. D6 ec D7 0x1FFFA 0 Time Keeping - Minutes D5 D4 D3 D2 10s Minutes D1 D0 Minutes ot R Contains the BCD value of minutes. Lower nibble (four bits) contains the lower digit and operates from 0 to 9; upper nibble (three bits) contains the upper minutes digit and operates from 0 to 5. The range for the register is 0–59. 0x1FFF9 N D7 Time Keeping - Seconds D6 0 D5 10s Seconds D4 D3 D2 D1 D0 Seconds Contains the BCD value of seconds. Lower nibble (four bits) contains the lower digit and operates from 0 to 9; upper nibble (three bits) contains the upper digit and operates from 0 to 5. The range for the register is 0–59. Document Number: 001-06401 Rev. *J Page 13 of 29 [+] Feedback CY14B101K Table 5. Register Map Detail (continued) Calibration/Control 0X1FFF8 OSCEN D7 D6 D5 OSCEN 0 Calibration Sign D4 D3 D2 D1 D0 Calibration Oscillator Enable. When set to 1, the oscillator is stopped. When set to 0, the oscillator runs. Disabling the oscillator saves battery or capacitor power during storage. Calibration Determines if the calibration adjustment is applied as an addition (1) to or as a subtraction (0) from the time-base. Sign ig ns Calibration These five bits control the calibration of the clock. WatchDog Timer D7 D6 WDS WDW D5 D4 D3 D2 WDT D1 D0 es 0x1FFF7 Watchdog Strobe. Setting this bit to 1 reloads and restarts the watchdog timer. Setting the bit to 0 has no effect. The bit is cleared automatically after the watchdog timer is reset. The WDS bit is write only. Reading it always returns a 0. WDW Watchdog Write Enable. Setting this bit to 1 disables any WRITE to the watchdog timeout value (D5–D0). This allows the user to set the watchdog strobe bit without disturbing the timeout value. Setting this bit to 0 allows bits D5–D0 to be written to the watchdog register when the next write cycle is complete. This function is explained in detail in the “Watchdog Timer” on page 9. WDT Watchdog timeout selection. The watchdog timer interval is selected by the 6-bit value in this register. It represents a multiplier of the 32 Hz count (31.25 ms). The range of timeout value is 31.25 ms (a setting of 1) to 2 seconds (setting of 3 Fh). Setting the watchdog timer register to 0 disables the timer. These bits can be written only if the WDW bit was set to 0 on a previous cycle. d fo rN ew D WDS D7 D6 D5 WIE AIE PFIE en 0x1FFF6 de Interrupt Status/Control D4 D3 D2 D1 D0 0 H/L P/L 0 0 Watchdog Interrupt Enable. When set to 1 and a watchdog timeout occurs, the watchdog timer drives the INT pin and the WDF flag. When set to 0, the watchdog timeout affects only the WDF flag. AIE Alarm Interrupt Enable. When set to 1, the alarm match drives the INT pin and the AF flag. When set to 0, the alarm match only affects the AF flag. PFIE Power Fail Enable. When set to 1, the alarm match drives the INT pin and the PF flag. When set to 0, the power fail monitor affects only the PF flag. om ec 0 m WIE Reserved for future use High/Low. When set to 1, the INT pin is driven active HIGH. When set to 0, the INT pin is open drain, active LOW. P/L Pulse/Level. When set to 1, the INT pin is driven active (determined by H/L) by an interrupt source for approximately 200 ms. When set to 0, the INT pin is driven to an active level (as set by H/L) until the flags register is read. N ot R H/L 0x1FFF5 Alarm - Day D7 D6 M 0 D5 D4 10s Alarm Date D3 D2 D1 D0 Alarm Date Contains the alarm value for the date of the month and the mask bit to select or deselect the date value. M Match. When this bit is set to 0, the date value is used in the alarm match. Setting this bit to 1 causes the match circuit to ignore the date value. Document Number: 001-06401 Rev. *J Page 14 of 29 [+] Feedback CY14B101K Table 5. Register Map Detail (continued) Alarm - Hours 0x1FFF4 D7 D6 D5 M D4 D3 D2 10s Alarm Hours D1 D0 Alarm Hours Contains the alarm value for the hours and the mask bit to select or deselect the hours value. M Match. When this bit is set to 0, the hours value is used in the alarm match. Setting this bit to 1 causes the match circuit to ignore the hours value. Alarm - Minutes D7 D6 D5 M D4 D3 D2 D1 ig ns 0x1FFF3 10s Alarm Minutes D0 Alarm Minutes Contains the alarm value for the minutes and the mask bit to select or deselect the minutes value. Alarm - Seconds D7 D6 D5 M D4 D3 ew 0x1FFF2 es Match. When this bit is set to 0, the minutes value is used in the alarm match. Setting this bit to 1 causes the match circuit to ignore the minutes value. D M 10s Alarm Seconds D2 D1 D0 Alarm Seconds M rN Contains the alarm value for the seconds and the mask bit to select or deselect the seconds’ value. Match. When this bit is set to 0, the seconds value is used in the alarm match. Setting this bit to 1 causes the match circuit to ignore the seconds value. D5 10s Centuries D4 D3 D2 d D6 D1 D0 Centuries de D7 0x1FFF1 fo Time Keeping - Centuries D6 WDF AF Flags D5 D4 D3 D2 D1 D0 PF OSCF 0 CAL W R m D7 om 0x1FFF0 en Contains the BCD value of centuries. Lower nibble contains the lower digit and operates from 0 to 9; upper nibble contains the upper digit and operates from 0 to 9. The range for the register is 0-99 centuries. Watchdog Timer Flag. This read only bit is set to 1 when the watchdog timer is allowed to reach 0 without being reset by the user. It is cleared to 0 when the Flags register is read or on power-up. AF Alarm Flag. This read only bit is set to 1 when the time and date match the values stored in the alarm registers with the match bits = 0. It is cleared when the Flags register is read or on power-up. PF Power Fail Flag. This read only bit is set to 1 when power falls below the power fail threshold VSWITCH. It is cleared to 0 when the Flags register is read or on power-up. OSCF Oscillator Fail Flag. Set to 1 on power up if the oscillator is enabled and not running in the first 5 ms of operation. This indicates that RTC backup power failed and clock value is no longer valid. The user must reset this bit to 0 to clear this condition (Flag). The chip does not clear this flag. This bit survives power cycles. CAL Calibration Mode. When set to 1, a 512 Hz square wave is output on the INT pin. When set to 0, the INT pin resumes normal operation. This bit defaults to 0 (disabled) on power up. W Write Enable: Setting the W bit to 1 freezes updates of the RTC registers. The user can then write to RTC registers, Alarm registers, Calibration register, Interrupt register and Flags register. Setting the W bit to 0 causes the contents of the RTC registers to be transferred to the time keeping counters if the time has been changed (a new base time is loaded). This bit defaults to 0 on power up. R Read Enable: Setting R bit to 1, stops clock updates to user RTC registers so that clock updates are not seen during the reading process. Set R bit to 0 to resume clock updates to the holding register. Setting this bit does not require W bit to be set to 1. This bit defaults to 0 on power up. N ot R ec WDF Document Number: 001-06401 Rev. *J Page 15 of 29 [+] Feedback CY14B101K Maximum Ratings Package Power Dissipation Capability (TA = 25°C) ................................................... 1.0W Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested. Surface Mount Pb Soldering Temperature (3 Seconds).......................................... +260°C DC Output Current (1 output at a time, 1s duration) ... 15 mA Static Discharge Voltage.......................................... > 2001V (MIL-STD-883, Method 3015) Supply Voltage on VCC Relative to GND ..........–0.5V to 4.1V Latch Up Current ................................................... > 200 mA Voltage Applied to Outputs in High Z State ....................................... –0.5V to VCC + 0.5V Operating Range Input Voltage...........................................–0.5V to Vcc + 0.5V Range Transient Voltage ( (VCC – 0.2V). All other inputs cycling. Dependent on output loading and cycle rate. Values obtained without output loads. 10 mA ICC4 Average VCAP Current during AutoStore Cycle All Inputs Do Not Care, VCC = Max Average current for duration tSTORE 3 mA ISB VCC Standby Current WE > (VCC – 0.2V). All others VIN < 0.2V or > (VCC–0.2V). Standby current level after nonvolatile cycle is complete. Inputs are static. f = 0 MHz 3 mA IIX Input Leakage Current –1 +1 μA IOZ Off State Output Leakage VCC = Max, VSS < VIN < VCC, CE or OE > VIH Current –1 +1 μA Input HIGH Voltage 2.0 VCC + 0.5 V VIL Input LOW Voltage VSS – 0.5 0.8 V VOH Output HIGH Voltage IOUT = –2 mA VOL Output LOW Voltage IOUT = 4 mA VCAP Storage Capacitor Between VCAP pin and VSS, 5V rated m om ec R VCC = Max, VSS < VIN < VCC N VIH[10] en ICC2 ot de d fo ICC1 VCC Industrial Over the Operating Range (VCC = 2.7V to 3.6V) [8, 9] Description Ambient Temperature Commercial DC Electrical Characteristics Parameter ig ns Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied ............................................ –55°C to +125°C 2.4 17 V 0.4 V 120 μF Notes 8. The HSB pin has IOUT = –10 μA for VOH of 2.4 V, this parameter is characterized but not tested. 9. The INT pin is open drain and does not source or sink current when interrupt register bit D3 is low. 10. VIH changes by 100 mV when VCC > 3.5V. Document Number: 001-06401 Rev. *J Page 16 of 29 [+] Feedback CY14B101K Data Retention and Endurance Parameter Description Min Unit DATAR Data Retention 20 Years NVC Nonvolatile STORE Operations 200 K Max Unit 7 pF Capacitance These parameters are guaranteed but not tested. Description Input Capacitance COUT Output Capacitance Test Conditions TA = 25°C, f = 1 MHz, VCC = 0 to 3.0 V ig ns Parameter CIN 7 These parameters are guaranteed but not tested. ΘJC Description Test Conditions Thermal Resistance (junction to ambient) Test conditions follow standard test methods and procedures for measuring thermal Thermal Resistance (junction to case) impedance, in accordance with EIA/JESD51. ew ΘJA D Parameter es Thermal Resistance pF 48-SSOP Unit 34.85 °C/W 16.35 °C/W fo rN Figure 7. AC Test Loads R1 577Ω R1 577Ω 3.0V For Tri-state Specs d 3.0V OUTPUT de OUTPUT R2 789Ω R2 789Ω om AC Test Conditions 5 pF m en 30 pF N ot R ec Input Pulse Levels ..................................................0 V to 3 V Input Rise and Fall Times (10% - 90%)........................
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