CY15B016J-SXE

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Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.com CY15B016J 16-Kbit (2K × 8) Serial (I2C) Automotive-E F-RAM 16-Kbit (2K × 8) Serial (I2C) Automotive-E F-RAM Features ■ ■ Functional Description 16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2K × 8 13 ❐ High-endurance 10 trillion (10 ) read/writes ❐ 121-year data retention (See Data Retention and Endurance on page 10) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process The CY15B016J is a 16-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories. Fast 2-wire Serial interface (I2C) ❐ Up to 1-MHz frequency 2 ❐ Direct hardware replacement for serial (I C) EEPROM ❐ Supports legacy timings for 100 kHz and 400 kHz Unlike EEPROM, the CY15B016J performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. Also, F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. The CY15B016J is capable of supporting 1013 read/write cycles, or 10 million times more write cycles than EEPROM. ■ Low power consumption ❐ 120 A active current at 100 kHz ❐ 20 A (typ) standby current ■ Voltage operation: VDD = 3.0 V to 3.6 V ■ Automotive-E temperature: –40 C to +125 C ■ 8-pin small outline integrated circuit (SOIC) package ■ AEC Q100 Grade 1 compliant ■ Restriction of hazardous substances (RoHS) compliant These capabilities make the CY15B016J ideal for nonvolatile memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system. The CY15B016J provides substantial benefits to users of serial (I2C) EEPROM as a hardware drop-in replacement. The device specifications are guaranteed over an automotive-e temperature range of –40 C to +125 C. Logic Block Diagram Counter Address Latch 2Kx8 F-RAM Array 11 8 SDA SCL WP Cypress Semiconductor Corporation Document Number: 002-10550 Rev. *C Serial to Parallel Converter Data Latch 8 Control Logic • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised November 22, 2018 CY15B016J Contents Pinout ................................................................................ 3 Pin Definitions .................................................................. 3 Functional Overview ........................................................ 4 Memory Architecture ........................................................ 4 I2C Interface ...................................................................... 4 STOP Condition (P) ..................................................... 4 START Condition (S) ................................................... 4 Data/Address Transfer ................................................ 5 Acknowledge/No-acknowledge ................................... 5 Slave Device Address ................................................. 6 Addressing Overview (Word Address) ........................ 6 Data Transfer .............................................................. 6 Memory Operation ............................................................ 6 Write Operation ........................................................... 6 Read Operation ........................................................... 7 Endurance ......................................................................... 8 Maximum Ratings ............................................................. 9 Operating Range ............................................................... 9 DC Electrical Characteristics .......................................... 9 Data Retention and Endurance ..................................... 10 Example of an F-RAM Life Time in an AEC-Q100 Automotive Application ..................... 10 Document Number: 002-10550 Rev. *C Capacitance .................................................................... 10 Thermal Resistance ........................................................ 10 AC Test Loads and Waveforms ..................................... 11 AC Test Conditions ........................................................ 11 AC Switching Characteristics ....................................... 12 Power Cycle Timing ....................................................... 13 Ordering Information ...................................................... 14 Ordering Code Definitions ......................................... 14 Package Diagram ............................................................ 15 Acronyms ........................................................................ 16 Document Conventions ................................................. 16 Units of Measure ....................................................... 16 Document History Page ................................................. 17 Sales, Solutions, and Legal Information ...................... 18 Worldwide Sales and Design Support ....................... 18 Products .................................................................... 18 PSoC® Solutions ...................................................... 18 Cypress Developer Community ................................. 18 Technical Support ..................................................... 18 Page 2 of 18 CY15B016J Pinout Figure 1. 8-pin SOIC pinout NC 1 NC 2 NC 3 VSS 4 Top View not to scale 8 VDD 7 WP 6 SCL 5 SDA Pin Definitions Pin Name SDA I/O Type Description Input/Output Serial Data/Address. This is a bi-directional pin for the I2C interface. It is open-drain and is intended to be wire-AND'd with other devices on the I2C bus. The input buffer incorporates a Schmitt trigger for noise immunity and the output driver includes slope control for falling edges. An external pull-up resistor is required. SCL Input Serial Clock. The serial clock pin for the I2C interface. Data is clocked out of the device on the falling edge, and into the device on the rising edge. WP Input Write Protect. When tied to VDD, addresses in the entire memory map will be write-protected. When WP is connected to ground, all addresses are write enabled. This pin is pulled down internally. VSS Power supply Ground for the device. Must be connected to the ground of the system. VDD Power supply Power supply input to the device. NC NC No Connect. Die pads are not connected to the package pin. Document Number: 002-10550 Rev. *C Page 3 of 18 CY15B016J Functional Overview operation is complete. This is explained in more detail in the interface section. The CY15B016J is a serial F-RAM memory. The memory array is logically organized as 2,048 × 8 bits and is accessed using an industry-standard I2C interface. The functional operation of the F-RAM is similar to serial (I2C) EEPROM. The major difference between the CY15B016J and a serial (I2C) EEPROM with the same pinout is the F-RAM’s superior write performance, high endurance, and low power consumption. Note that the CY15B016J contains no power management circuits other than a simple internal power-on reset. It is the user’s responsibility to ensure that VDD is within data sheet tolerances to prevent incorrect operation. Memory Architecture When accessing the CY15B016J, the user addresses 2K locations of eight data bits each. These eight data bits are shifted in or out serially. The addresses are accessed using the I2C protocol, which includes a slave address (to distinguish other non-memory devices), a row address, and a segment address. The row address consists of 8-bits that specify one of the 256 rows. The 3-bit segment address specifies one of the 8 segments within each row. The complete address of 11-bits specifies each byte address uniquely. The access time for the memory operation is essentially zero, beyond the time needed for the serial protocol. That is, the memory is read or written at the speed of the I2C bus. Unlike a serial (I2C) EEPROM, it is not necessary to poll the device for a ready condition because writes occur at bus speed. By the time a new bus transaction can be shifted into the device, a write I2C Interface The CY15B016J employs a bi-directional I2C bus protocol using few pins or board space. Figure 2 illustrates a typical system configuration using the CY15B016J in a microcontroller-based system. The industry standard I2C bus is familiar to many users but is described in this section. By convention, any device that is sending data onto the bus is the transmitter while the target device for this data is the receiver. The device that is controlling the bus is the master. The master is responsible for generating the clock signal for all operations. Any device on the bus that is being controlled is a slave. The CY15B016J is always a slave device. The bus protocol is controlled by transition states in the SDA and SCL signals. There are four conditions including START, STOP, data bit, or acknowledge. Figure 3 on page 5 and Figure 4 on page 5 illustrates the signal conditions that specify the four states. Detailed timing diagrams are shown in the electrical specifications section. Figure 2. System Configuration using Serial (I2C) nvSRAM V DD RPmin = (VDD - VOLmax) / IOL RPmax = tr / (0.8473 * Cb) SCL Microcontroller SDA SCL SDA CY15B016J SCL SDA Other Slave Device STOP Condition (P) START Condition (S) A STOP condition is indicated when the bus master drives SDA from LOW to HIGH while the SCL signal is HIGH. All operations using the CY15B016J should end with a STOP condition. If an operation is in progress when a STOP is asserted, the operation will be aborted. The master must have control of SDA in order to assert a STOP condition. A START condition is indicated when the bus master drives SDA from HIGH to LOW while the SCL signal is HIGH. All commands should be preceded by a START condition. An operation in progress can be aborted by asserting a START condition at any time. Aborting an operation using the START condition will ready the CY15B016J for a new operation. If during operation the power supply drops below the specified VDD minimum, the system should issue a START condition prior to performing another operation. Document Number: 002-10550 Rev. *C Page 4 of 18 CY15B016J Figure 3. START and STOP Conditions full pagewidth SDA SDA SCL SCL S P STOP Condition START Condition Figure 4. Data Transfer on the I2C Bus handbook, full pagewidth P SDA Acknowledgement signal from slave MSB SCL S 1 2 7 9 8 1 Acknowledgement signal from receiver 2 3 4-8 ACK START condition 9 ACK All data transfers (including addresses) take place while the SCL signal is HIGH. Except under the two conditions described above, the SDA signal should not change while SCL is HIGH. Acknowledge/No-acknowledge The acknowledge takes place after the 8th data bit has been transferred in any transaction. During this state the transmitter should release the SDA bus to allow the receiver to drive it. The receiver drives the SDA signal LOW to acknowledge receipt of the byte. If the receiver does not drive SDA LOW, the condition is a no-acknowledge and the operation is aborted. S or P STOP or START condition Byte complete Data/Address Transfer S The receiver would fail to acknowledge for two distinct reasons. First is that a byte transfer fails. In this case, the no-acknowledge ceases the current operation so that the device can be addressed again. This allows the last byte to be recovered in the event of a communication error. Second and most common, the receiver does not acknowledge to deliberately end an operation. For example, during a read operation, the CY15B016J will continue to place data onto the bus as long as the receiver sends acknowledges (and clocks). When a read operation is complete and no more data is needed, the receiver must not acknowledge the last byte. If the receiver acknowledges the last byte, this will cause the CY15B016J to attempt to drive the bus on the next clock while the master is sending a new command such as STOP. Figure 5. Acknowledge on the I2C Bus handbook, full pagewidth DATA OUTPUT BY MASTER No Acknowledge DATA OUTPUT BY SLAVE Acknowledge SCL FROM MASTER 1 2 8 9 S START Condition Document Number: 002-10550 Rev. *C Clock pulse for acknowledgement Page 5 of 18 CY15B016J Slave Device Address The first byte that the CY15B016J expects after a START condition is the slave address. As shown in Figure 6, the slave address contains the device type, the page of memory to be accessed, and a bit that specifies if the transaction is a read or a write. Bits 7–4 are the device type and should be set to 1010b for the CY15B016J. These bits allow other function types to reside on the I2C bus within an identical address range. Bits 3–1 are the page select. It specifies the 256-byte block of memory that is targeted for the current operation. Bit 0 is the read/write bit (R/W). R/W = ‘1’ indicates a read operation and R/W = ‘0’ indicates a write operation. Figure 6. Memory Slave Device Address 1 Slave ID 0 A2 A1 The CY15B016J is designed to operate in a manner very similar to other I2C interface memory products. The major differences result from the higher performance write capability of F-RAM technology. These improvements result in some differences between the CY15B016J and a similar configuration EEPROM during writes. The complete operation for both writes and reads is explained below. All writes begin with a slave address, then a word address. The bus master indicates a write operation by setting the LSB of the slave address (R/W bit) to a ‘0’. After addressing, the bus master sends each byte of data to the memory and the memory generates an acknowledge condition. Any number of sequential bytes may be written. If the end of the address range is reached internally, the address counter will wrap from 7FFh to 000h. LSB 0 Memory Operation Write Operation MSB handbook, halfpage 1 sequential byte. If the acknowledge is not sent, the CY15B016J will end the read operation. For a write operation, the CY15B016J will accept 8 data bits from the master then send an acknowledge. All data transfer occurs MSB (most significant bit) first. A0 R/W Page Select Addressing Overview (Word Address) After the CY15B016J (as receiver) acknowledges the slave address, the master can place the word address on the bus for a write operation. The word address is the lower 8-bits of the address to be combined with the 3-bits page select to specify exactly the byte to be written. The complete 11-bit address is latched internally. No word address occurs for a read operation, though the 3-bit page select is latched internally. Reads always use the lower 8-bits that are held internally in the address latch. That is, reads always begin at the address following the previous access. A random read address can be loaded by doing a write operation as explained below. After transmission of each data byte, just prior to the acknowledge, the CY15B016J increments the internal address latch. This allows the next sequential byte to be accessed with no additional addressing. After the last address (7FFh) is reached, the address latch will roll over to 000h. There is no limit to the number of bytes that can be accessed with a single read or write operation. Data Transfer After the address bytes have been transmitted, data transfer between the bus master and the CY15B016J can begin. For a read operation the CY15B016J will place 8 data bits on the bus then wait for an acknowledge from the master. If the acknowledge occurs, the CY15B016J will transfer the next Unlike other nonvolatile memory technologies, there is no effective write delay with F-RAM. Since the read and write access times of the underlying memory are the same, the user experiences no delay through the bus. The entire memory cycle occurs in less time than a single bus clock. Therefore, any operation including read or write can occur immediately following a write. Acknowledge polling, a technique used with EEPROMs to determine if a write is complete is unnecessary and will always return a ready condition. Internally, an actual memory write occurs after the 8th data bit is transferred. It will be complete before the acknowledge is sent. Therefore, if the user desires to abort a write without altering the memory contents, this should be done using START or STOP condition prior to the 8th data bit. The CY15B016J uses no page buffering. The memory array can be write-protected using the WP pin. Setting the WP pin to a HIGH condition (VDD) will write-protect all addresses. The CY15B016J will not acknowledge data bytes that are written to protected addresses. In addition, the address counter will not increment if writes are attempted to these addresses. Setting WP to a LOW state (VSS) will disable the write protect. WP is pulled down internally. Figure 7 and Figure 8 on page 7 below illustrate a single-byte and multiple-byte write cycles. Figure 7. Single-Byte Write By Master Start S By F-RAM Document Number: 002-10550 Rev. *C Address & Data Slave Address 0 A Word Address Stop A Data Byte A P Acknowledge Page 6 of 18 CY15B016J Figure 8. Multi-Byte Write By Master Start S Address & Data Slave Address 0 A Stop Word Address A Data Byte By F-RAM A Data Byte A P Acknowledge Read Operation There are two basic types of read operations. They are current address read and selective address read. In a current address read, the CY15B016J uses the internal address latch to supply the lower 8 address bits. In a selective read, the user performs a procedure to set these lower address bits to a specific value. Current Address & Sequential Read As mentioned above the CY15B016J uses an internal latch to supply the lower 8 address bits for a read operation. A current address read uses the existing value in the address latch as a starting place for the read operation. The system reads from the address immediately following that of the last operation. To perform a current address read, the bus master supplies a slave address with the LSB set to a ‘1’. This indicates that a read operation is requested. The three page select bits in the slave address specifies the block of memory that is used for the read operation. After receiving the complete slave address, the CY15B016J will begin shifting out data from the current address on the next clock. The current address is the 3-bits from the slave address combined with the 8-bits that were in the internal address latch. Beginning with the current address, the bus master can read any number of bytes. Thus, a sequential read is simply a current address read with multiple byte transfers. After each byte the internal address counter will be incremented. Note Each time the bus master acknowledges a byte, this indicates that the CY15B016J should read out the next sequential byte. There are four ways to properly terminate a read operation. Failing to properly terminate the read will most likely create a bus contention as the CY15B016J attempts to read out additional data onto the bus. The four valid methods are: 1. The bus master issues a no-acknowledge in the 9th clock cycle and a STOP in the 10th clock cycle. This is illustrated in the diagrams below. This is preferred. 2. The bus master issues a no-acknowledge in the 9th clock cycle and a START in the 10th. 3. The bus master issues a STOP in the 9th clock cycle. 4. The bus master issues a START in the 9th clock cycle. If the internal address reaches 7FFh, it will wrap around to 000h on the next read cycle. Figure 9 and Figure 10 below show the proper operation for current address reads. Figure 9. Current Address Read By Master Start No Acknowledge Address Stop S Slave Address By F-RAM 1 A Acknowledge Data Byte 1 P Data Figure 10. Sequential Read By Master Start Address No Acknowledge Acknowledge Stop S Slave Address By F-RAM Document Number: 002-10550 Rev. *C 1 A Acknowledge Data Byte A Data Byte 1 P Data Page 7 of 18 CY15B016J Selective (Random) Read There is a simple technique that allows a user to select a random address location as the starting point for a read operation. This involves using the first two bytes of a write operation to set the internal address followed by subsequent read operations. To perform a selective read, the bus master sends out the slave address with the LSB (R/W) set to 0. This specifies a write operation. According to the write protocol, the bus master then sends the word address byte that is loaded into the internal address latch. After the CY15B016J acknowledges the word address, the bus master issues a START condition. This simultaneously aborts the write operation and allows the read command to be issued with the slave address LSB set to a ‘1’. The operation is now a current address read. Figure 11. Selective (Random) Read By Master Address Start Start Address No Acknowledge Acknowledge Stop S Slave Address 0 A By F-RAM Word Address A S Acknowledge Endurance The Cy15B016J internally operates with a read and restore mechanism. Therefore, endurance cycles are applied for each read or write cycle. The memory architecture is based on an array of rows and columns. Each read or write access causes an endurance cycle for an entire row. In the CY15B016J, a row is 64 bits wide. Every 8-byte boundary marks the beginning of a Document Number: 002-10550 Rev. *C Slave Address 1 A Data Byte A Data Byte 1 P Data new row. Endurance can be optimized by ensuring frequently accessed data is located in different rows. Regardless, FRAM read and write endurance is effectively unlimited at the 1MHz I2C speed. Even at 3000 accesses per second to the same row, 10 years time will elapse before 1 trillion endurance cycles occur. Page 8 of 18 CY15B016J Maximum Ratings Exceeding maximum ratings may shorten the useful life of the device. These user guidelines are not tested. Storage temperature ................................ –65 °C to +150 °C Maximum accumulated storage time At 150 °C ambient temperature ................................. 1000 h At 125 °C ambient temperature ................................11000 h At 85 °C ambient temperature .............................. 121 Years Ambient temperature with power applied ................................... –55 °C to +125 °C Supply voltage on VDD relative to VSS .........–1.0 V to +5.0 V Input voltage .......... –1.0 V to + 5.0 V and VIN < VDD + 1.0 V DC voltage applied to outputs in High-Z state .................................... –0.5 V to VDD + 0.5 V Transient voltage (< 20 ns) on any pin to ground potential ............ –2.0 V to VDD + 2.0 V Package power dissipation capability (TA = 25 °C) ................................................................. 1.0 W Surface mount lead soldering temperature (10 seconds) ............................................................ +260 °C Electrostatic Discharge Voltage [1] Human Body Model (AEC-Q100-002 Rev. E) ..................... 2 kV Charged Device Model (AEC-Q100-011 Rev. B) ................ 500 V Latch-up current .................................................... > 140 mA * Exception: The “VIN < VDD + 1.0 V” restriction does not apply to the SCL and SDA inputs. Operating Range Range Ambient Temperature (TA) VDD Automotive-E –40 C to +125 C 3.0 V to 3.6 V DC Electrical Characteristics Over the Operating Range Parameter Description VDD Power supply IDD Average VDD current Test Conditions SCL toggling between VDD – 0.3 V and VSS, other inputs VSS or VDD – 0.3 V. Min Typ [2] Max Unit 3.0 3.3 3.6 V fSCL = 100 kHz – – 120 A fSCL = 400 kHz – – 200 A fSCL = 1 MHz – – 340 A SCL = SDA = VDD. All TA = 85 C other inputs VSS or T = 125 C VDD. Stop command A issued. – – 6 A – – 20 A Input leakage current (Except WP) VSS < VIN < VDD –1 – +1 A Input leakage current (for WP) VSS < VIN < VDD –1 – +100 A ILO Output leakage current VSS < VIN < VDD –1 – +1 A VIH Input HIGH voltage 0.75 × VDD – VDD + 0.3 V VIL Input LOW voltage –0.3 – 0.25 × VDD V VOL Output LOW voltage IOL = 3 mA – – 0.4 V Rin[3] Input resistance (WP) For VIN = VIL (Max) 40 – – k For VIN = VIH (Min) 1 – – M 0.05 × VDD – – V ISB ILI VHYS[4] Standby current Input Hysteresis Notes 1. Electrostatic Discharge voltages specified in the datasheet are the AEC-Q100 standard limits used for qualifying the device. To know the maximum value device passes for, please refer to the device qualification report available on the website. 2. Typical values are at 25 °C, VDD = VDD (typ). Not 100% tested. 3. The input pull-down circuit is strong (40 k) when the input voltage is below VIL and weak (1 M) when the input voltage is above VIH. 4. These parameters are guaranteed by design and are not tested. Document Number: 002-10550 Rev. *C Page 9 of 18 CY15B016J Data Retention and Endurance Parameter TDR NVC Description Data retention Endurance Min Max Unit TA = 125 C Test condition 11000 – Hours TA = 105 C 11 – Years TA = 85 C 121 – Years 13 – Cycles Over Operating Temperature 10 Example of an F-RAM Life Time in an AEC-Q100 Automotive Application An application does not operate under a steady temperature for the entire usage life time of the application. Instead, it is often expected to operate in multiple temperature environments throughout the application’s usage life time. Accordingly, the retention specification for F-RAM in applications often needs to be calculated cumulatively. An example calculation for a multi-temperature thermal profiles is given below. Acceleration Factor with respect to Tmax A [5] Temperature T Time Factor t LT A = ----------------------- = e L  Tmax  Ea  1 1  ------- --- – --------------k  T Tmax T1 = 125 C t1 = 0.1 T2 = 105 C t2 = 0.15 A2 = 8.67 T3 = 85 C t3 = 0.25 A3 = 95.68 T4 = 55 C t4 = 0.50 A4 = 6074.80 Profile Factor P Profile Life Time L (P) 1 P = ------------------------------------------------------t1- + -----t2- + -----t3- + -----t4-  ----- A1 A2 A3 A4 L  P  = P  L  Tmax  8.33 > 10.46 Years A1 = 1 Capacitance Parameter [6] Description CO Output pin capacitance (SDA) CI Input pin capacitance Test Conditions Max Unit 8 pF 6 pF Test Conditions 8-pin SOIC Unit Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA/JESD51. 147 C/W 47 C/W TA = 25 C, f = 1 MHz, VDD = VDD(typ) Thermal Resistance Parameter [6] Description JA Thermal resistance (junction to ambient) JC Thermal resistance (junction to case) Notes 5. Where k is the Boltzmann constant 8.617 × 10-5 eV/K, Tmax is the highest temperature specified for the product, and T is any temperature within the F-RAM product specification. All temperatures are in Kelvin in the equation. 6. This parameter is periodically sampled and not 100% tested. Document Number: 002-10550 Rev. *C Page 10 of 18 CY15B016J AC Test Loads and Waveforms Figure 12. AC Test Loads and Waveforms 3.6 V 1.1 k OUTPUT 100 pF AC Test Conditions Input pulse levels .................................10% and 90% of VDD Input rise and fall times .................................................10 ns Input and output timing reference levels ................0.5 × VDD Output load capacitance ............................................ 100 pF Document Number: 002-10550 Rev. *C Page 11 of 18 CY15B016J AC Switching Characteristics Over the Operating Range Parameter [7] Description Cypress Alt. Parameter Parameter Min Max Min Max Min Max Unit – 0.1 – 0.4 – 1.0 MHz fSCL[8] SCL clock frequency tSU; STA Start condition setup for repeated Start 4.7 – 0.6 – 0.25 – µs tHD;STA Start condition hold time 4.0 – 0.6 – 0.25 – µs tLOW Clock LOW period 4.7 – 1.3 – 0.6 – µs tHIGH Clock HIGH period 4.0 – 0.6 – 0.4 – µs tSU;DAT tSU;DATA Data in setup 250 – 100 – 100 – ns tHD;DAT tHD;DATA Data in hold 0 – 0 – 0 – ns Data output hold (from SCL @ VIL) 0 – 0 – 0 – ns – 1000 – 300 – 300 ns tDH [9] tr Input rise time tF[9] tf Input fall time tR – 300 – 300 – 100 ns 4.0 – 0.6 – 0.25 – µs SCL LOW to SDA Data Out Valid – 3 – 0.9 – 0.55 µs tBUF Bus free before new transmission 4.7 – 1.3 – 0.5 – µs tSP Noise suppression time constant on SCL, SDA – 50 – 50 – 50 ns tSU;STO tAA STOP condition setup tVD;DATA Figure 13. Read Bus Timing Diagram tR tF tSP tLOW tHIGH tSP SCL tSU:STA 1/fSCL tBUF tHD:DAT tSU:DAT SDA tDH tAA Stop Start Start Acknowledge Figure 14. Write Bus Timing Diagram tHD:DAT SCL tHD:STA tSU:STO tSU:DAT tAA SDA Start Stop Start Acknowledge Notes 7. Test conditions assume signal transition time of 10 ns or less, timing reference levels of VDD/2, input pulse levels of 0 to VDD(typ), and output loading of the specified IOL and load capacitance shown in Figure 12. 8. The speed-related specifications are guaranteed characteristic points along a continuous curve of operation from DC to fSCL (max). 9. These parameters are guaranteed by design and are not tested. Document Number: 002-10550 Rev. *C Page 12 of 18 CY15B016J Power Cycle Timing Over the Operating Range Parameter Description Min Max Unit tPU Power-up VDD(min) to first access (START condition) 1 – ms tPD Last access (STOP condition) to power-down (VDD(min)) 0 – µs tVR [10, 11] VDD power-up ramp rate 30 – µs/V tVF [10, 11] VDD power-down ramp rate 30 – µs/V VDD ~ ~ Figure 15. Power Cycle Timing VDD(min) tVR SDA I2 C START tVF tPD ~ ~ tPU VDD(min) I2 C STOP Notes 10. Slope measured at any point on the VDD waveform. 11. Guaranteed by design. Document Number: 002-10550 Rev. *C Page 13 of 18 CY15B016J Ordering Information Package Diagram Ordering Code CY15B016J-SXE 51-85066 Package Type 8-pin SOIC Operating Range Automotive-E CY15B016J-SXET All these parts are Pb-free. Contact your local Cypress sales representative for availability of these parts. Ordering Code Definitions CY 15 B 016 J - S X E X Option: X = blank or T blank = Standard; T = Tape and Reel Temperature Range: E = Automotive-E (–40 C to +125 C) X = Pb-free Package Type: S = 8-pin SOIC J = I2C F-RAM Density: 016 = 16-Kbit Voltage: B = 3.0 V to 3.6 V F-RAM Company ID: CY = Cypress Document Number: 002-10550 Rev. *C Page 14 of 18 CY15B016J Package Diagram Figure 16. 8-pin SOIC (150 Mils) Package Outline, 51-85066 51-85066 *I Document Number: 002-10550 Rev. *C Page 15 of 18 CY15B016J Acronyms Acronym Document Conventions Description Units of Measure ACK Acknowledge CMOS Complementary Metal Oxide Semiconductor °C degree Celsius Electronic Industries Alliance Hz hertz Inter-Integrated Circuit Kb 1024 bit I/O Input/Output kHz kilohertz JEDEC Joint Electron Devices Engineering Council k kilohm LSB Least Significant Bit MHz megahertz MSB Most Significant Bit M megaohm NACK No Acknowledge A microampere RoHS Restriction of Hazardous Substances s microsecond R/W Read/Write mA milliampere SCL Serial Clock Line ms millisecond ns nanosecond SDA Serial Data Access  ohm SOIC Small Outline Integrated Circuit % percent WP Write Protect pF picofarad V volt W watt EIA 2 I C Document Number: 002-10550 Rev. *C Symbol Unit of Measure Page 16 of 18 CY15B016J Document History Page Document Title: CY15B016J, 16-Kbit (2K × 8) Serial (I2C) Automotive-E F-RAM Document Number: 002-10550 Rev. ECN No. Orig. of Change Submission Date ** 5075942 GVCH 01/12/2016 New data sheet. *A 5564687 GVCH 01/27/2017 Changed status from Preliminary to Final. Updated Maximum Ratings: Updated Electrostatic Discharge Voltage (in compliance with AEC-Q100 standard): Changed value of “Human Body Model” from 4 kV to 2 kV. Changed value of “Charged Device Model” from 1.25 kV to 500 V. Removed Machine Model related information. Updated to new template. *B 5698510 GVCH 04/17/2017 Updated Maximum Ratings: Added Note 1 and referred the same note in “Electrostatic Discharge Voltage”. Updated to new template. *C 6391441 GVCH 11/22/2018 Updated Maximum Ratings: Replaced “–55 °C to +150 °C” with “–65 °C to +150 °C” in ratings corresponding to “Storage temperature”. Updated Package Diagram: spec 51-85066 – Changed revision from *H to *I. Updated to new template. Completing Sunset Review. Document Number: 002-10550 Rev. *C Description of Change Page 17 of 18 CY15B016J Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. PSoC® Solutions Products Arm® Cortex® Microcontrollers Automotive cypress.com/arm cypress.com/automotive Clocks & Buffers Interface cypress.com/clocks cypress.com/interface Internet of Things Memory cypress.com/iot cypress.com/memory Microcontrollers cypress.com/mcu PSoC cypress.com/psoc Power Management ICs Cypress Developer Community Community | Projects | Video | Blogs | Training | Components Technical Support cypress.com/support cypress.com/pmic Touch Sensing cypress.com/touch USB Controllers Wireless Connectivity PSoC 1 | PSoC 3 | PSoC 4 | PSoC 5LP | PSoC 6 MCU cypress.com/usb cypress.com/wireless © Cypress Semiconductor Corporation, 2016–2018. 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Document Number: 002-10550 Rev. *C Revised November 22, 2018 Page 18 of 18