CY15B104Q
4-Mbit (512 K × 8) Serial (SPI) F-RAM
4-Mbit (512 K × 8) Serial (SPI) F-RAM
Features
Functional Description
■
4-Mbit ferroelectric random access memory (F-RAM) logically
organized as 512 K × 8
14
❐ High-endurance 100 trillion (10 ) read/writes
❐ 151-year data retention (See the Data Retention and
Endurance table)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
The CY15B104Q is a 4-Mbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 151 years
while eliminating the complexities, overhead, and system-level
reliability problems caused by serial flash, EEPROM, and other
nonvolatile memories.
■
Very fast serial peripheral interface (SPI)
❐ Up to 40-MHz frequency
❐ Direct hardware replacement for serial flash and EEPROM
❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
■
Sophisticated write protection scheme
❐ Hardware protection using the Write Protect (WP) pin
❐ Software protection using Write Disable instruction
❐ Software block protection for 1/4, 1/2, or entire array
Unlike serial flash and EEPROM, the CY15B104Q performs
write operations at bus speed. No write delays are incurred. Data
is written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endurance compared to other
nonvolatile memories. The CY15B104Q is capable of supporting
1014 read/write cycles, or 100 million times more write cycles
than EEPROM.
■
Device ID
❐ Manufacturer ID and Product ID
■
Low power consumption
❐ 300 A active current at 1 MHz
❐ 100 A (typ) standby current
❐ 3 A (typ) sleep mode current
■
Low-voltage operation: VDD = 2.0 V to 3.6 V
■
Industrial temperature: –40 C to +85 C
■
Packages
❐ 8-pin small outline integrated circuit (SOIC) package
❐ 8-pin thin dual flat no leads (TDFN) package
■
These capabilities make the CY15B104Q ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data collection, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of serial flash or EEPROM can cause data loss.
The CY15B104Q provides substantial benefits to users of serial
EEPROM or flash as a hardware drop-in replacement. The
CY15B104Q uses the high-speed SPI bus, which enhances the
high-speed write capability of F-RAM technology. The device
incorporates a read-only Device ID that allows the host to
determine the manufacturer, product density, and product
revision. The device specifications are guaranteed over an
industrial temperature range of –40 C to +85 C.
For a complete list of related documentation, click here.
Restriction of hazardous substances (RoHS) compliant
Logic Block Diagram
WP
Instruction Decoder
Clock Generator
Control Logic
Write Protect
CS
HOLD
SCK
512 K x 8
F-RAM Array
Instruction Register
Address Register
Counter
19
8
SI
Data I/O Register
SO
3
Nonvolatile Status
Register
Cypress Semiconductor Corporation
Document Number: 001-94240 Rev. *D
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised April 18, 2017
CY15B104Q
Contents
Pinouts .............................................................................. 3
Pin Definitions .................................................................. 3
Overview ............................................................................ 4
Memory Architecture ................................................... 4
Serial Peripheral Interface (SPI) Bus .......................... 4
SPI Overview ............................................................... 4
SPI Modes ................................................................... 5
Power Up to First Access ............................................ 6
Command Structure .................................................... 6
WREN - Set Write Enable Latch ................................. 6
WRDI - Reset Write Enable Latch ............................... 6
Status Register and Write Protection ............................. 7
Read Status Register (RDSR) ..................................... 7
Write Status Register (WRSR) .................................... 7
Memory Operation ............................................................ 8
Write Operation ........................................................... 8
Read Operation ........................................................... 8
Fast Read Operation ................................................... 8
HOLD Pin Operation ................................................. 10
Sleep Mode ............................................................... 10
Device ID ................................................................... 11
Endurance ................................................................. 11
Document Number: 001-94240 Rev. *D
Maximum Ratings ........................................................... 12
Operating Range ............................................................. 12
DC Electrical Characteristics ........................................ 12
Data Retention and Endurance ..................................... 13
Capacitance .................................................................... 13
Thermal Resistance ........................................................ 13
AC Test Conditions ........................................................ 13
AC Switching Characteristics ....................................... 14
Power Cycle Timing ....................................................... 16
Ordering Information ...................................................... 17
Ordering Code Definitions ......................................... 17
Package Diagrams .......................................................... 18
Acronyms ........................................................................ 20
Document Conventions ................................................. 20
Units of Measure ....................................................... 20
Document History Page ................................................. 21
Sales, Solutions, and Legal Information ...................... 22
Worldwide Sales and Design Support ....................... 22
Products .................................................................... 22
PSoC® Solutions ...................................................... 22
Cypress Developer Community ................................. 22
Technical Support ..................................................... 22
Page 2 of 22
CY15B104Q
Pinouts
Figure 1. 8-pin SOIC Pinout
CS
1
SO
2
WP
3
VSS
4
Top View
not to scale
8
VDD
7
HOLD
6
SCK
5
SI
Figure 2. 8-pin TDFN Pinout
CS
1
SO
2
WP
3
VSS
4
EXPOSED
PAD
8
VDD
7
HOLD
6
SCK
5
SI
Top View
not to scale
Pin Definitions
Pin Name
I/O Type
Description
CS
Input
Chip Select. This active LOW input activates the device. When HIGH, the device enters low-power
standby mode, ignores other inputs, and the output is tristated. When LOW, the device internally
activates the SCK signal. A falling edge on CS must occur before every opcode.
SCK
Input
Serial Clock. All I/O activity is synchronized to the serial clock. Inputs are latched on the rising
edge and outputs occur on the falling edge. Because the device is synchronous, the clock
frequency may be any value between 0 and 40 MHz and may be interrupted at any time.
SI[1]
Input
Serial Input. All data is input to the device on this pin. The pin is sampled on the rising edge of
SCK and is ignored at other times. It should always be driven to a valid logic level to meet IDD
specifications.
SO[1]
Output
Serial Output. This is the data output pin. It is driven during a read and remains tristated at all
other times including when HOLD is LOW. Data transitions are driven on the falling edge of the
serial clock.
WP
Input
Write Protect. This Active LOW pin prevents write operation to the Status Register when WPEN
is set to ‘1’. This is critical because other write protection features are controlled through the Status
Register. A complete explanation of write protection is provided in Status Register and Write
Protection on page 7. This pin must be tied to VDD if not used.
HOLD
Input
HOLD Pin. The HOLD pin is used when the host CPU must interrupt a memory operation for
another task. When HOLD is LOW, the current operation is suspended. The device ignores any
transition on SCK or CS. All transitions on HOLD must occur while SCK is LOW. This pin must be
tied to VDD if not used.
VSS
Power supply Ground for the device. Must be connected to the ground of the system.
VDD
Power supply Power supply input to the device.
EXPOSED PAD
No connect
The EXPOSED PAD on the bottom of 8-pin TDFN package is not connected to the die. The
EXPOSED PAD should be left floating.
Note
1. SI may be connected to SO for a single pin data interface.
Document Number: 001-94240 Rev. *D
Page 3 of 22
CY15B104Q
Overview
The CY15B104Q is a serial F-RAM memory. The memory array
is logically organized as 524,288 × 8 bits and is accessed using
an industry-standard serial peripheral interface (SPI) bus. The
functional operation of the F-RAM is similar to serial flash and
serial EEPROMs. The major difference between the
CY15B104Q and a serial flash or EEPROM with the same pinout
is the F-RAM's superior write performance, high endurance, and
low power consumption.
Memory Architecture
When accessing the CY15B104Q, the user addresses 512K
locations of eight data bits each. These eight data bits are shifted
in or out serially. The addresses are accessed using the SPI
protocol, which includes a chip select (to permit multiple devices
on the bus), an opcode, and a three-byte address. The upper 5
bits of the address range are 'don't care' values. The complete
address of 19 bits specifies each byte address uniquely.
Most functions of the CY15B104Q are either controlled by the
SPI interface or handled by on-board circuitry. The access time
for the memory operation is essentially zero, beyond the time
needed for the serial protocol. That is, the memory is read or
written at the speed of the SPI bus. Unlike a serial flash or
EEPROM, it is not necessary to poll the device for a ready
condition because writes occur at bus speed. By the time a new
bus transaction can be shifted into the device, a write operation
is complete. This is explained in more detail in the interface
section.
Serial Peripheral Interface (SPI) Bus
The CY15B104Q is an SPI slave device and operates at speeds
up to 40 MHz. This high-speed serial bus provides high-performance serial communication to an SPI master. Many common
microcontrollers have hardware SPI ports allowing a direct
interface. It is simple to emulate the port using ordinary port pins
for microcontrollers that do not. The CY15B104Q operates in SPI
Mode 0 and 3.
SPI Overview
The SPI is a four-pin interface with Chip Select (CS), Serial Input
(SI), Serial Output (SO), and Serial Clock (SCK) pins.
The SPI is a synchronous serial interface, which uses clock and
data pins for memory access and supports multiple devices on
the data bus. A device on the SPI bus is activated using the CS
pin.
The relationship between chip select, clock, and data is dictated
by the SPI mode. This device supports SPI modes 0 and 3. In
both of these modes, data is clocked into the F-RAM on the rising
edge of SCK starting from the first rising edge after CS goes
active.
The SPI protocol is controlled by opcodes. These opcodes
specify the commands from the bus master to the slave device.
After CS is activated, the first byte transferred from the bus
Document Number: 001-94240 Rev. *D
master is the opcode. Following the opcode, any addresses and
data are then transferred. The CS must go inactive after an
operation is complete and before a new opcode can be issued.
The commonly used terms in the SPI protocol are as follows:
SPI Master
The SPI master device controls the operations on the SPI bus.
An SPI bus may have only one master with one or more slave
devices. All the slaves share the same SPI bus lines and the
master may select any of the slave devices using the CS pin. All
of the operations must be initiated by the master activating a
slave device by pulling the CS pin of the slave LOW. The master
also generates the SCK and all the data transmission on SI and
SO lines are synchronized with this clock.
SPI Slave
The SPI slave device is activated by the master through the Chip
Select line. A slave device gets the SCK as an input from the SPI
master and all the communication is synchronized with this
clock. An SPI slave never initiates a communication on the SPI
bus and acts only on the instruction from the master.
The CY15B104Q operates as an SPI slave and may share the
SPI bus with other SPI slave devices.
Chip Select (CS)
To select any slave device, the master needs to pull down the
corresponding CS pin. Any instruction can be issued to a slave
device only while the CS pin is LOW. When the device is not
selected, data through the SI pin is ignored and the serial output
pin (SO) remains in a high-impedance state.
Note A new instruction must begin with the falling edge of CS.
Therefore, only one opcode can be issued for each active Chip
Select cycle.
Serial Clock (SCK)
The serial clock is generated by the SPI master and the communication is synchronized with this clock after CS goes LOW.
The CY15B104Q enables SPI modes 0 and 3 for data communication. In both of these modes, the inputs are latched by the
slave device on the rising edge of SCK and outputs are issued
on the falling edge. Therefore, the first rising edge of SCK
signifies the arrival of the first Most Significant Bit (MSB) of an
SPI instruction on the SI pin. Further, all data inputs and outputs
are synchronized with SCK.
Data Transmission (SI/SO)
The SPI data bus consists of two lines, SI and SO, for serial data
communication. SI is also referred to as Master Out Slave In
(MOSI) and SO is referred to as Master In Slave Out (MISO). The
master issues instructions to the slave through the SI pin, while
the slave responds through the SO pin. Multiple slave devices
may share the SI and SO lines as described earlier.
The CY15B104Q has two separate pins for SI and SO, which can
be connected with the master as shown in Figure 3.
Page 4 of 22
CY15B104Q
For a microcontroller that has no dedicated SPI bus, a
general-purpose port may be used. To reduce hardware
resources on the controller, it is possible to connect the two data
pins (SI, SO) together and tie off (HIGH) the HOLD and WP pins.
Figure 4 shows such a configuration, which uses only three pins.
Serial Opcode
After the slave device is selected with CS going LOW, the first
byte received is treated as the opcode for the intended operation.
CY15B104Q uses the standard opcodes for memory accesses.
Invalid Opcode
Most Significant Bit (MSB)
If an invalid opcode is received, the opcode is ignored and the
device ignores any additional serial data on the SI pin until the
next falling edge of CS, and the SO pin remains tristated.
The SPI protocol requires that the first bit to be transmitted is the
Most Significant Bit (MSB). This is valid for both address and
data transmission.
Status Register
The 4-Mbit serial F-RAM requires a 3-byte address for any read
or write operation. Because the address is only 19 bits, the first
five bits, which are fed in are ignored by the device. Although
these five bits are ‘don’t care’, Cypress recommends that these
bits be set to 0s to enable seamless transition to higher memory
densities.
CY15B104Q has an 8-bit Status Register. The bits in the Status
Register are used to configure the device. These bits are
described in Table 3 on page 7.
Figure 3. System Configuration with SPI Port
SCK
MOSI
MISO
SCK
SPI
Microcontroller
SI
SO
CY15B104Q
CS HOLD WP
SCK
SI
SO
CY15B104Q
CS HOLD WP
CS1
HO LD 1
WP1
CS2
HO LD 2
WP2
Figure 4. System Configuration without SPI Port
P1.0
P1.1
SCK
SI
SO
Microcontroller
CY15B104Q
CS HOLD WP
P1.2
SPI Modes
CY15B104Q may be driven by a microcontroller with its SPI
peripheral running in either of the following two modes:
■
SPI Mode 0 (CPOL = 0, CPHA = 0)
■
SPI Mode 3 (CPOL = 1, CPHA = 1)
For both these modes, the input data is latched in on the rising
edge of SCK starting from the first rising edge after CS goes
active. If the clock starts from a HIGH state (in mode 3), the first
Document Number: 001-94240 Rev. *D
rising edge after the clock toggles is considered. The output data
is available on the falling edge of SCK.
The two SPI modes are shown in Figure 5 and Figure 6 on page
6. The status of the clock when the bus master is not transferring
data is:
■
SCK remains at 0 for Mode 0
■
SCK remains at 1 for Mode 3
The device detects the SPI mode from the status of the SCK pin
when the device is selected by bringing the CS pin LOW. If the
Page 5 of 22
CY15B104Q
SCK pin is LOW when the device is selected, SPI Mode 0 is
assumed and if the SCK pin is HIGH, it works in SPI Mode 3.
Figure 5. SPI Mode 0
CS
0
1
2
3
5
4
6
7
6
5
4
3
2
1
0
MSB
LSB
Figure 6. SPI Mode 3
Figure 7. WREN Bus Configuration
CS
0
1
2
3
5
4
6
CS
7
0
SCK
SI
1
2
3
4
5
6
7
SCK
7
6
5
4
3
2
MSB
1
SI
0
0
0
0
0
LSB
The CY15B104Q is not accessible for a tPU time after power-up.
Users must comply with the timing parameter, tPU, which is the
minimum time from VDD (min) to the first CS LOW.
Command Structure
There are nine commands, called opcodes, that can be issued
by the bus master to the CY15B104Q (see Table 1). These
opcodes control the functions performed by the memory.
1
1
0
WRDI - Reset Write Enable Latch
The WRDI command disables all write activity by clearing the
Write Enable Latch. The user can verify that writes are disabled
by reading the WEL bit in the Status Register and verifying that
WEL is equal to ‘0’. Figure 8 illustrates the WRDI command bus
configuration.
Figure 8. WRDI Bus Configuration
Table 1. Opcode Commands
Description
0
HI-Z
SO
Power Up to First Access
Name
The CY15B104Q will power up with writes disabled. The WREN
command must be issued before any write operation. Sending
the WREN opcode allows the user to issue subsequent opcodes
for write operations. These include writing the Status Register
(WRSR) and writing the memory (WRITE).
Sending the WREN opcode causes the internal Write Enable
Latch to be set. A flag bit in the Status Register, called WEL,
indicates the state of the latch. WEL = ’1’ indicates that writes are
permitted. Attempting to write the WEL bit in the Status Register
has no effect on the state of this bit – only the WREN opcode can
set this bit. The WEL bit will be automatically cleared on the rising
edge of CS following a WRDI, a WRSR, or a WRITE operation.
This prevents further writes to the Status Register or the F-RAM
array without another WREN command. Figure 7 illustrates the
WREN command bus configuration.
7
SCK
SI
WREN - Set Write Enable Latch
Opcode
WREN
Set write enable latch
0000 0110b
WRDI
Reset write enable latch
0000 0100b
RDSR
Read Status Register
0000 0101b
WRSR
Write Status Register
0000 0001b
READ
Read memory data
0000 0011b
FSTRD
Fast read memory data
0000 1011b
WRITE
Write memory data
0000 0010b
SLEEP
Enter sleep mode
1011 1001b
RDID
Read device ID
1001 1111b
Reserved
Reserved
1100 0011b
CS
0
1
2
3
4
5
6
7
SCK
SI
SO
0
0
0
0
0
1
0
0
HI-Z
1100 0010b
0101 1010b
0101 1011b
Document Number: 001-94240 Rev. *D
Page 6 of 22
CY15B104Q
Status Register and Write Protection
The write protection features of the CY15B104Q are multi-tiered and are enabled through the status register. The Status Register is
organized as follows. (The default value shipped from the factory for WEL, BP0, BP1, bits 4–5, WPEN is ‘0’, and for bit 6 is ‘1’.)
Table 2. Status Register
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
WPEN (0)
X (1)
X (0)
X (0)
BP1 (0)
BP0 (0)
WEL (0)
X (0)
Table 3. Status Register Bit Definition
Bit
Definition
Description
Bit 0
Don’t care
This bit is non-writable and always returns ‘0’ upon read.
Bit 1 (WEL)
Write Enable
WEL indicates if the device is write enabled. This bit defaults to ‘0’ (disabled) on power-up.
WEL = '1' --> Write enabled
WEL = '0' --> Write disabled
Bit 2 (BP0)
Block Protect bit ‘0’
Used for block protection. For details, see Table 4 on page 7.
Bit 3 (BP1)
Block Protect bit ‘1’
Used for block protection. For details, see Table 4 on page 7.
Bit 4-5
Don’t care
These bits are non-writable and always return ‘0’ upon read.
Bit 6
Don’t care
This bit is non-writable and always returns ‘1’ upon read.
Bit 7 (WPEN) Write Protect Enable bit Used to enable the function of Write Protect Pin (WP). For details, see Table 5 on page 7.
Bits 0 and 4–5 are fixed at ‘0’ and bit 6 is fixed at ‘1’; none of these
bits can be modified. Note that bit 0 ("Ready or Write in progress”
bit in serial flash and EEPROM) is unnecessary, as the F-RAM
writes in real-time and is never busy, so it reads out as a ‘0’. An
exception to this is when the device is waking up from sleep
mode, which is described in Sleep Mode on page 10. The BP1
and BP0 control the software write-protection features and are
nonvolatile bits. The WEL flag indicates the state of the Write
Enable Latch. Attempting to directly write the WEL bit in the
Status Register has no effect on its state. This bit is internally set
and cleared via the WREN and WRDI commands, respectively.
BP1 and BP0 are memory block write protection bits. They
specify portions of memory that are write-protected as shown in
Table 4.
Table 4. Block Memory Write Protection
BP1
0
0
1
1
BP0
0
1
0
1
Protected Address Range
None
60000h to 7FFFFh (upper 1/4)
40000h to 7FFFFh (upper 1/2)
00000h to 7FFFFh (all)
The BP1 and BP0 bits and the Write Enable Latch are the only
mechanisms that protect the memory from writes. The remaining
write protection features protect inadvertent changes to the block
protect bits.
The write protect enable bit (WPEN) in the Status Register
controls the effect of the hardware write protect (WP) pin. When
the WPEN bit is set to '0', the status of the WP pin is ignored.
When the WPEN bit is set to '1', a LOW on the WP pin inhibits a
write to the Status Register. Thus the Status Register is
write-protected only when WPEN = '1' and WP = '0'. Table 5
summarizes the write protection conditions.
Table 5. Write Protection
WEL WPEN WP
Protected Unprotected
Blocks
Blocks
Status
Register
0
X
X
Protected
Protected
Protected
1
0
X
Protected
Unprotected
Unprotected
1
1
0
Protected
Unprotected
Protected
1
1
1
Protected
Unprotected
Unprotected
Read Status Register (RDSR)
The RDSR command allows the bus master to verify the
contents of the Status Register. Reading the status register
provides information about the current state of the
write-protection features. Following the RDSR opcode, the
CY15B104Q will return one byte with the contents of the Status
Register.
Write Status Register (WRSR)
The WRSR command allows the SPI bus master to write into the
Status Register and change the write protect configuration by
setting the WPEN, BP0 and BP1 bits as required. Before issuing
a WRSR command, the WP pin must be HIGH or inactive. Note
that on the CY15B104Q, WP only prevents writing to the Status
Register, not the memory array. Before sending the WRSR
command, the user must send a WREN command to enable
writes. Executing a WRSR command is a write operation and
therefore, clears the Write Enable Latch.
Figure 9. RDSR Bus Configuration
Document Number: 001-94240 Rev. *D
Page 7 of 22
CY15B104Q
CS
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
SCK
Opcode
0
SI
0
0
0
0
1
0
1
0
Data
HI-Z
SO
D7 D6 D5 D4 D3 D2 D1 D0
MSB
LSB
Figure 10. WRSR Bus Configuration (WREN not shown)
CS
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
SCK
Data
Opcode
SI
0
SO
0
0
0
0
0
0
1 D7 X
MSB
X D3 D2 X
X
LSB
HI-Z
Memory Operation
The SPI interface, which is capable of a high clock frequency,
highlights the fast write capability of the F-RAM technology.
Unlike serial flash and EEPROMs, the CY15B104Q can perform
sequential writes at bus speed. No page register is needed and
any number of sequential writes may be performed.
Write Operation
All writes to the memory begin with a WREN opcode with CS
being asserted and deasserted. The next opcode is WRITE. The
WRITE opcode is followed by a three-byte address containing
the 19-bit address (A18–A0) of the first data byte to be written
into the memory. The upper five bits of the three-byte address
are ignored. Subsequent bytes are data bytes, which are written
sequentially. Addresses are incremented internally as long as
the bus master continues to issue clocks and keeps CS LOW. If
the last address of 7FFFFh is reached, the counter will roll over
to 00000h. Data is written MSB first. The rising edge of CS terminates a write operation. A write operation is shown in Figure 11.
Note When a burst write reaches a protected block address, the
automatic address increment stops and all the subsequent data
bytes received for write will be ignored by the device.
EEPROMs use page buffers to increase their write throughput.
This compensates for the technology's inherently slow write
operations. F-RAM memories do not have page buffers because
each byte is written to the F-RAM array immediately after it is
clocked in (after the eighth clock). This allows any number of
bytes to be written without page buffer delays.
Note If the power is lost in the middle of the write operation, only
the last completed byte will be written.
Document Number: 001-94240 Rev. *D
X
Read Operation
After the falling edge of CS, the bus master can issue a READ
opcode. Following the READ command is a three-byte address
containing the 19-bit address (A18–A0) of the first byte of the
read operation. The upper five bits of the address are ignored.
After the opcode and address are issued, the device drives out
the read data on the next eight clocks. The SI input is ignored
during read data bytes. Subsequent bytes are data bytes, which
are read out sequentially. Addresses are incremented internally
as long as the bus master continues to issue clocks and CS is
LOW. If the last address of 7FFFFh is reached, the counter will
roll over to 00000h. Data is read MSB first. The rising edge of CS
terminates a read operation and tristates the SO pin. A read
operation is shown in Figure 12.
Fast Read Operation
The CY15B104Q supports a FAST READ opcode (0Bh) that is
provided for code compatibility with serial flash devices. The
FAST READ opcode is followed by a three-byte address
containing the 19-bit address (A18–A0) of the first byte of the
read operation and then a dummy byte. The dummy byte inserts
a read latency of 8-clock cycle. The fast read operation is
otherwise the same as an ordinary read operation except that it
requires an additional dummy byte. After receiving the opcode,
address, and a dummy byte, the CY15B104Q starts driving its
SO line with data bytes, with MSB first, and continues transmitting as long as the device is selected and the clock is
available. In case of bulk read, the internal address counter is
incremented automatically, and after the last address 7FFFFh is
reached, the counter rolls over to 00000h. When the device is
driving data on its SO line, any transition on its SI line is ignored.
The rising edge of CS terminates a fast read operation and
tristates the SO pin. A Fast Read operation is shown in Figure 13.
Page 8 of 22
CY15B104Q
Figure 11. Memory Write (WREN not shown) Operation
CS
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
~
~ ~
~
0
SCK
Opcode
0
SI
0
0
0
0
20 21 22 23 0
1
1
0
X
X
X
X
X A18 A17 A16
MSB
3
4
5
6
7
Data
19-bit Address
0
2
A3 A2 A1 A0 D7 D6 D5 D4 D3 D2 D1 D0
LSB MSB
LSB
HI-Z
SO
Figure 12. Memory Read Operation
CS
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
Opcode
0
SI
0
0
0
~
~ ~
~
0
SCK
20 21 22 23 0
1
2
3
4
5
6
7
19-bit Address
0
0
1
1
X
X
X
X
X A18 A17 A16
MSB
A3 A2 A1 A0
LSB
Data
HI-Z
SO
D7 D6 D5 D4 D3 D2 D1 D0
MSB
LSB
Figure 13. Fast Read Operation
CS
1
2
3
4
5 6
7
0
1
2
3
4
SCK
Opcode
SI
0
0
0
0
1
5
6
7
~
~ ~
~
0
20 21 22 23 24 25 26 27 28 29 30 31 0
1 1
X X
X
X
X A18A17 A16
MSB
SO
HI-Z
A3 A2 A1 A0 X
X
X X
X
3 4
5
6
7
X X X
LSB
Data
D7 D6 D5 D4 D3 D2 D1 D0
MSB
Document Number: 001-94240 Rev. *D
2
Dummy Byte
19-bit Address
0
1
LSB
Page 9 of 22
CY15B104Q
HOLD Pin Operation
HIGH while SCK is LOW will resume an operation. The transitions of HOLD must occur while SCK is LOW, but the SCK and
CS pin can toggle during a hold state.
The HOLD pin can be used to interrupt a serial operation without
aborting it. If the bus master pulls the HOLD pin LOW while SCK
is LOW, the current operation will pause. Taking the HOLD pin
~
~
Figure 14. HOLD Operation[2]
~
~
CS
~
~
SCK
~
~
HOLD
VALID IN
VALID IN
~
~
SI
SO
Sleep Mode
pin. On the next falling edge of CS, the device will return to
normal operation within tREC time. The SO pin remains in a HI-Z
state during the wakeup period. The device does not necessarily
respond to an opcode within the wakeup period. To start the
wakeup procedure, the controller may send a “dummy” read, for
example, and wait the remaining tREC time.
A low-power sleep mode is implemented on the CY15B104Q
device. The device will enter the low-power state when the
SLEEP opcode B9h is clocked in and a rising edge of CS is
applied. When in sleep mode, the SCK and SI pins are ignored
and SO will be HI-Z, but the device continues to monitor the CS
Figure 15. Sleep Mode Operation
Enters Sleep Mode
t REC Recovers from Sleep Mode
CS
0
1
2
3
4
5
6
7
t SU
SCK
SI
1
0
1
1
1
0
SO
0
1
VALID IN
HI-Z
Note
2. Figure 14 shows HOLD operation for input mode and output mode.
Document Number: 001-94240 Rev. *D
Page 10 of 22
CY15B104Q
Device ID
The CY15B104Q device can be interrogated for its manufacturer, product identification, and die revision. The RDID opcode
9Fh allows the user to read the manufacturer ID and product ID,
both of which are read-only bytes. The JEDEC-assigned
manufacturer ID places the Cypress (Ramtron) identifier in bank
7; therefore, there are six bytes of the continuation code 7Fh
followed by the single byte C2h. There are two bytes of product
ID, which includes a family code, a density code, a sub code, and
the product revision code.
Table 6. Device ID
Device ID Description
71–16
(56 bits)
Device ID
(9 bytes)
Manufacturer ID
7F7F7F7F7F7FC22608h
0111111101111111011111110111
1111011111110111111111000010
15–13
(3 bits)
12–8
(5 bits)
7–6
(2 bits)
5–3
(3 bits)
2–0
(3 bits)
Product ID
Family
Density
Sub
Rev
Rsvd
001
00110
00
001
000
Figure 16. Read Device ID
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
SCK
~
~
CS
44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71
Opcode
1
0
SO
0 1
1
1
1
1
HI-Z
D7 D6 D5 D4 D3 D2 D1 D0
~
~
SI
D3 D2 D1 D0 D7 D6 D5 D4 D3 D2 D1 D0 D7 D6 D5 D4 D3 D2 D1 D0 D7 D6 D5 D4 D3 D2 D1 D0
MSB
LSB
9-Byte Device ID
Endurance
The CY15B104Q devices are capable of being accessed at least
1014 times, reads or writes. An F-RAM memory operates with a
read and restore mechanism. Therefore, an endurance cycle is
applied on a row basis for each access (read or write) to the
memory array. The F-RAM architecture is based on an array of
rows and columns of 32K rows of 64-bits each. The entire row is
internally accessed once, whether a single byte or all eight bytes
are read or written. Each byte in the row is counted only once in
an endurance calculation. Table 7 shows endurance calculations
for a 64-byte repeating loop, which includes an opcode, a starting
address, and a sequential 64-byte data stream. This causes
each byte to experience one endurance cycle through the loop.
F-RAM read and write endurance is virtually unlimited even at a
40-MHz clock rate.
Document Number: 001-94240 Rev. *D
Table 7. Time to Reach Endurance Limit for Repeating
64-byte Loop
SCK Freq
(MHz)
Endurance
Cycles/sec
Endurance
Cycles/year
Years to Reach
Limit
40
73,520
2.32 × 1012
43.1
10
18,380
5.79 × 1011
172.7
5
9,190
2.90 × 1011
345.4
Page 11 of 22
CY15B104Q
Maximum Ratings
Transient voltage (< 20 ns) on
any pin to ground potential ................. –2.0 V to VDD + 2.0 V
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Package power dissipation
capability (TA = 25 °C) ................................................. 1.0 W
Storage temperature ................................ –55 C to +125 C
Maximum accumulated storage time
At 125 °C ambient temperature ................................. 1000 h
At 85 °C ambient temperature ................................ 10 Years
Ambient temperature
with power applied ................................... –55 °C to +125 °C
Supply voltage on VDD relative to VSS .........–1.0 V to +4.5 V
Input voltage ........... –1.0 V to +4.5 V and VIN < VDD + 1.0 V
DC voltage applied to outputs
in High-Z state .................................... –0.5 V to VDD + 0.5 V
Surface mount lead soldering
temperature (3 seconds) ......................................... +260 C
DC output current (1 output at a time, 1s duration) .... 15 mA
Electrostatic Discharge Voltage
Human Body Model (JEDEC Std JESD22-A114-B) .............. 2 kV
Charged Device Model (JEDEC Std JESD22-C101-A) ........ 500 V
Latch-up current .................................................... > 140 mA
Operating Range
Range
Ambient Temperature (TA)
VDD
DC Electrical Characteristics
Over the Operating Range
Parameter
Description
VDD
Power supply
IDD
VDD supply current
ISB
IZZ
VDD standby current
Sleep mode current
Test Conditions
Min
Typ[3]
Max
Unit
2.0
3.3
3.6
V
SCK toggling
between
VDD – 0.2 V and VSS,
other inputs VSS or
VDD – 0.2 V.
SO = Open
fSCK = 1 MHz
–
0.13
0.30
mA
fSCK = 40 MHz
–
1.4
3
mA
CS = VDD. All other
inputs VSS or VDD.
TA = 25 C
–
100
150
A
TA = 85 C
–
–
250
A
TA = 25 C
–
3
5
A
TA = 85 C
–
–
8
A
CS = VDD. All other
inputs VSS or VDD.
ILI
Input leakage current
VSS < VIN < VDD
–
–
±1
A
ILO
Output leakage current
VSS < VOUT < VDD
–
–
±1
A
VIH
Input HIGH voltage
0.7 × VDD
–
VDD + 0.3
V
VIL
Input LOW voltage
– 0.3
–
0.3 × VDD
V
VOH1
Output HIGH voltage
IOH = –1 mA, VDD = 2.7 V.
2.4
–
–
V
VOH2
Output HIGH voltage
IOH = –100 A
VDD – 0.2
–
–
V
VOL1
Output LOW voltage
IOL = 2 mA, VDD = 2.7 V
–
–
0.4
V
VOL2
Output LOW voltage
IOL = 150 A
–
–
0.2
V
Note
3. Typical values are at 25 °C, VDD = VDD (typ). Not 100% tested.
Document Number: 001-94240 Rev. *D
Page 12 of 22
CY15B104Q
Data Retention and Endurance
Parameter
TDR
NVC
Description
Data retention
Endurance
Test condition
TA = 85 C
Min
Max
Unit
10
–
Years
TA = 75 C
38
–
TA = 65 C
151
–
Over operating temperature
1014
–
Cycles
Capacitance
Parameter [4]
Description
CO
Output pin capacitance (SO)
CI
Input pin capacitance
Test Conditions
Max
Unit
8
pF
6
pF
TA = 25 C, f = 1 MHz, VDD = VDD(typ)
Thermal Resistance
Parameter
JA
JC
Description
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
Test Conditions
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA / JESD51.
8-pin SOIC 8-pin TDFN
Unit
114
30
C/W
52
26
C/W
AC Test Conditions
Input pulse levels .................................10% and 90% of VDD
Input rise and fall times ...................................................3 ns
Input and output timing reference levels ................0.5 × VDD
Output load capacitance .............................................. 30 pF
Note
4. This parameter is periodically sampled and not 100% tested.
Document Number: 001-94240 Rev. *D
Page 13 of 22
CY15B104Q
AC Switching Characteristics
Over the Operating Range
Parameters [5]
Cypress
Parameter
VDD = 2.0 V to 3.6 V
Description
Alt.
Parameter
VDD = 2.7 V to 3.6 V
Min
Max
Min
Max
Unit
fSCK
–
SCK clock frequency
0
25
0
40
MHz
tCH
–
Clock HIGH time
18
–
11
–
ns
tCL
–
Clock LOW time
18
–
11
–
ns
tCSU
tCSS
Chip select setup
12
–
10
–
ns
tCSH
tCSH
Chip select hold
12
–
10
–
ns
tHZCS
Output disable time
–
20
–
12
ns
tODV
tCO
Output data valid time
–
16
–
9
ns
tOH
–
Output hold time
0
–
0
–
ns
tD
tOD
[6, 7]
–
Deselect time
60
–
40
–
ns
[7, 8]
–
Data in rise time
–
50
–
50
ns
tF[7, 8]
–
Data in fall time
–
50
–
50
ns
tSU
tSD
Data setup time
8
–
5
–
ns
tH
tHD
Data hold time
8
–
5
–
ns
tHS
tSH
HOLD setup time
12
–
10
–
ns
tHH
tHH
HOLD hold time
12
–
10
–
ns
tHZ[6, 7]
tLZ[7]
tHHZ
HOLD LOW to HI-Z
–
25
–
20
ns
tHLZ
HOLD HIGH to data active
–
25
–
20
ns
tR
Notes
5. Test conditions assume a signal transition time of 3 ns or less, timing reference levels of 0.5 × VDD, input pulse levels of 10% to 90% of VDD, and output loading of
the specified IOL/IOH and 30 pF load capacitance shown in AC Test Conditions on page 13.
6. tOD and tHZ are specified with a load capacitance of 5 pF. Transition is measured when the outputs enter a high impedance state
7. Characterized but not 100% tested in production.
8. Rise and fall times measured between 10% and 90% of waveform.
Document Number: 001-94240 Rev. *D
Page 14 of 22
CY15B104Q
Figure 17. Synchronous Data Timing (Mode 0)
tD
CS
tCSU
tCH
tCL
tCSH
SCK
tSU
SI
tH
VALID IN
VALID IN
VALID IN
tOH
tODV
SO
HI-Z
tOD
HI-Z
CS
SCK
tHH
~
~
~
~
Figure 18. HOLD Timing
tHS
~
~
tHS
VALID IN
tHZ
Document Number: 001-94240 Rev. *D
VALID IN
tLZ
~
~
SO
tSU
~
~
HOLD
SI
tHH
Page 15 of 22
CY15B104Q
Power Cycle Timing
Over the Operating Range
Parameter
Description
Min
Max
Unit
tPU
Power-up VDD(min) to first access (CS LOW)
1
–
ms
tPD
Last access (CS HIGH) to power-down (VDD(min))
0
–
µs
tVR [9]
VDD power-up ramp rate
50
–
µs/V
tVF [9]
VDD power-down ramp rate
100
–
µs/V
tREC [10]
Recovery time from sleep mode
–
450
µs
VDD
~
~
Figure 19. Power Cycle Timing
VDD(min)
tVR
CS
tVF
tPD
~
~
tPU
VDD(min)
Notes
9. Slope measured at any point on the VDD waveform.
10. Guaranteed by design. Refer to Figure 15 for sleep mode recovery timing.
Document Number: 001-94240 Rev. *D
Page 16 of 22
CY15B104Q
Ordering Information
Ordering Code
Package
Diagram
Package Type
CY15B104Q-SXI
001-85261 8-pin SOIC
CY15B104Q-SXIT
001-85261 8-pin SOIC
CY15B104Q-LHXI
001-85579 8-pin TDFN
CY15B104Q-LHXIT
001-85579 8-pin TDFN
Operating
Range
Industrial
All these parts are Pb-free. Contact your local Cypress sales representative for availability of these parts.
Ordering Code Definitions
CY 15
B
104 Q - S
X
I
T
Option:
blank = Standard; T = Tape and Reel
Temperature Range:
I = Industrial (–40 C to +85 C)
X = Pb-free
Package Type: S = 8-pin SOIC; LH = 8-pin DFN
Q = SPI F-RAM
Density: 104 = 4-Mbit
Voltage: B = 2.0 V to 3.6 V
F-RAM
Cypress
Document Number: 001-94240 Rev. *D
Page 17 of 22
CY15B104Q
Package Diagrams
Figure 20. 8-pin SOIC (208 Mils) Package Outline, 001-85261
001-85261 **
Document Number: 001-94240 Rev. *D
Page 18 of 22
CY15B104Q
Package Diagrams (continued)
Figure 21. 8-pin DFN (5 mm × 6 mm × 0.75 mm) Package Outline, 001-85579
001-85579 *A
Document Number: 001-94240 Rev. *D
Page 19 of 22
CY15B104Q
Acronyms
Acronym
Document Conventions
Description
Units of Measure
CPHA
Clock Phase
CPOL
Clock Polarity
°C
degree Celsius
EEPROM
Electrically Erasable Programmable Read-Only
Memory
Hz
hertz
EIA
Electronic Industries Alliance
kHz
kilohertz
F-RAM
Ferroelectric Random Access Memory
k
kilohm
I/O
Input/Output
JEDEC
Joint Electron Devices Engineering Council
JESD
JEDEC standards
LSB
Least Significant Bit
MSB
Most Significant Bit
RoHS
Restriction of Hazardous Substances
SPI
Serial Peripheral Interface
SOIC
Small Outline Integrated Circuit
TDFN
Thin Dual Flat No-lead
Document Number: 001-94240 Rev. *D
Symbol
Unit of Measure
Mbit
megabit
MHz
megahertz
A
microampere
F
microfarad
s
microsecond
mA
milliampere
ms
millisecond
ns
nanosecond
ohm
%
percent
pF
picofarad
V
volt
W
watt
Page 20 of 22
CY15B104Q
Document History Page
Document Title: CY15B104Q, 4-Mbit (512 K × 8) Serial (SPI) F-RAM
Document Number: 001-94240
Rev.
ECN No.
Orig. of
Change
Submission
Date
**
4504587
GVCH
09/17/2014
New data sheet.
*A
4569855
GVCH
11/18/2014
Changed status from Summary to Advance.
Updated Overview:
Updated Command Structure:
Updated Table 1:
Added reserved opcodes - 0xC3, 0xC2, 0x5A, 0x5B.
Description of Change
*B
4587063
GVCH
12/04/2014
Changed status from Advance to Preliminary.
*C
4878316
ZSK / PSR
09/03/2015
Changed status from Preliminary to Final.
Updated Functional Description:
Added “For a complete list of related documentation, click here.” at the end.
Updated Maximum Ratings:
Removed “Maximum junction temperature”.
Added “Maximum accumulated storage time”.
Added “Ambient temperature with power applied”.
Updated to new template.
Completing Sunset Review.
*D
5688114
RUPA
04/18/2017
Document Number: 001-94240 Rev. *D
Updated Cypress logo.
Updated Copyright information.
Page 21 of 22
CY15B104Q
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at Cypress Locations.
PSoC® Solutions
Products
ARM® Cortex® Microcontrollers
Automotive
cypress.com/arm
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Clocks & Buffers
Interface
cypress.com/clocks
cypress.com/interface
Internet of Things
Memory
cypress.com/iot
cypress.com/memory
Microcontrollers
cypress.com/mcu
PSoC
cypress.com/psoc
Power Management ICs
Cypress Developer Community
Forums | WICED IOT Forums | Projects | Video | Blogs |
Training | Components
Technical Support
cypress.com/support
cypress.com/pmic
Touch Sensing
cypress.com/touch
USB Controllers
Wireless Connectivity
PSoC 1 | PSoC 3 | PSoC 4 | PSoC 5LP | PSoC 6
cypress.com/usb
cypress.com/wireless
© Cypress Semiconductor Corporation, 2014-2017. This document is the property of Cypress Semiconductor Corporation and its subsidiaries, including Spansion LLC ("Cypress"). This document,
including any software or firmware included or referenced in this document ("Software"), is owned by Cypress under the intellectual property laws and treaties of the United States and other countries
worldwide. Cypress reserves all rights under such laws and treaties and does not, except as specifically stated in this paragraph, grant any license under its patents, copyrights, trademarks, or other
intellectual property rights. If the Software is not accompanied by a license agreement and you do not otherwise have a written agreement with Cypress governing the use of the Software, then Cypress
hereby grants you a personal, non-exclusive, nontransferable license (without the right to sublicense) (1) under its copyright rights in the Software (a) for Software provided in source code form, to
modify and reproduce the Software solely for use with Cypress hardware products, only internally within your organization, and (b) to distribute the Software in binary code form externally to end users
(either directly or indirectly through resellers and distributors), solely for use on Cypress hardware product units, and (2) under those claims of Cypress's patents that are infringed by the Software (as
provided by Cypress, unmodified) to make, use, distribute, and import the Software solely for use with Cypress hardware products. Any other use, reproduction, modification, translation, or compilation
of the Software is prohibited.
TO THE EXTENT PERMITTED BY APPLICABLE LAW, CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS DOCUMENT OR ANY SOFTWARE
OR ACCOMPANYING HARDWARE, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. To the extent
permitted by applicable law, Cypress reserves the right to make changes to this document without further notice. Cypress does not assume any liability arising out of the application or use of any
product or circuit described in this document. Any information provided in this document, including any sample design information or programming code, is provided only for reference purposes. It is
the responsibility of the user of this document to properly design, program, and test the functionality and safety of any application made of this information and any resulting product. Cypress products
are not designed, intended, or authorized for use as critical components in systems designed or intended for the operation of weapons, weapons systems, nuclear installations, life-support devices or
systems, other medical devices or systems (including resuscitation equipment and surgical implants), pollution control or hazardous substances management, or other uses where the failure of the
device or system could cause personal injury, death, or property damage ("Unintended Uses"). A critical component is any component of a device or system whose failure to perform can be reasonably
expected to cause the failure of the device or system, or to affect its safety or effectiveness. Cypress is not liable, in whole or in part, and you shall and hereby do release Cypress from any claim,
damage, or other liability arising from or related to all Unintended Uses of Cypress products. You shall indemnify and hold Cypress harmless from and against all claims, costs, damages, and other
liabilities, including claims for personal injury or death, arising from or related to any Unintended Uses of Cypress products.
Cypress, the Cypress logo, Spansion, the Spansion logo, and combinations thereof, WICED, PSoC, CapSense, EZ-USB, F-RAM, and Traveo are trademarks or registered trademarks of Cypress in
the United States and other countries. For a more complete list of Cypress trademarks, visit cypress.com. Other names and brands may be claimed as property of their respective owners.
Document Number: 001-94240 Rev. *D
Revised April 18, 2017
Page 22 of 22
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