Please note that Cypress is an Infineon Technologies Company.
The document following this cover page is marked as “Cypress” document as this is the
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Continuity of document content
The fact that Infineon offers the following product as part of the Infineon product
portfolio does not lead to any changes to this document. Future revisions will occur
when appropriate, and any changes will be set out on the document history page.
Continuity of ordering part numbers
Infineon continues to support existing part numbers. Please continue to use the
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CY15B128J
2
128-Kbit (16K × 8) Automotive Serial (I C)
F-RAM
128-Kbit (16K × 8) Automotive Serial (I2C) F-RAM
Features
■
■
Functional Description
128-Kbit ferroelectric random access memory (F-RAM)
logically organized as 16K × 8
14
❐ High-endurance 100 trillion (10 ) read/writes
❐ 151-year data retention (See Data Retention and Endurance
on page 12)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
Fast two-wire serial interface (I2C)
[1]
❐ Up to 3.4 MHz frequency
❐ Direct hardware replacement for serial EEPROM
❐ Supports legacy timings for 100 kHz and 400 kHz
■
Device ID
❐ Manufacturer ID and Product ID
■
Low-power consumption
❐ 175 A active current at 100 kHz
❐ 150 A standby current
❐ 8 A sleep mode current
■
Low-voltage operation: VDD = 2.0 V to 3.6 V
■
Automotive-A temperature: –40 C to +85 C
■
8-pin small outline integrated circuit (SOIC) package
■
Restriction of hazardous substances (RoHS) compliant
The CY15B128J is a 128-Kbit nonvolatile memory employing an
advanced ferroelectric process. An F-RAM is nonvolatile and
performs reads and writes similar to a RAM. It provides reliable
data retention for 151 years while eliminating the complexities,
overhead, and system-level reliability problems caused by
EEPROM and other nonvolatile memories.
Unlike EEPROM, the CY15B128J performs write operations at
bus speed. No write delays are incurred. Data is written to the
memory array immediately after each byte is successfully
transferred to the device. The next bus cycle can commence
without the need for data polling. In addition, the product offers
substantial write endurance compared with other nonvolatile
memories. F-RAM also exhibits much lower power during writes
than EEPROM because write operations do not require an
internally elevated power supply voltage for write circuits. The
CY15B128J is capable of supporting 1014 read/write cycles, or
100 million times more write cycles than EEPROM.
These capabilities make the CY15B128J ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data logging, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of EEPROM can cause data loss. The
combination of features allows more frequent data writing with
less overhead for the system.
The CY15B128J provides substantial benefits to users of serial
EEPROM as a hardware drop-in replacement. The device
incorporates a read-only Device ID that allows the host to
determine the manufacturer, product density, and product
revision. The device specifications are guaranteed over an
Automotive-A temperature range of –40 C to +85 C.
For a complete list of related documentation, click here.
Logic Block Diagram
Counter
Address
Latch
14
16 K x 8
F-RAM Array
8
Serial to Parallel
Converter
SDA
Data Latch
8
8
SCL
Device ID and
Manufacturer ID
Control Logic
WP
A0-A2
Note
1. The CY15B128J does not meet the NXP I2C specification in the Fast-mode Plus (Fm+, 1 MHz) for IOL and in the High Speed Mode (Hs-mode, 3.4 MHz) for Vhys.
Refer to the DC Electrical Characteristics on page 11 for more details.
Cypress Semiconductor Corporation
Document Number: 001-90872 Rev. *J
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised December 24, 2018
CY15B128J
Contents
Pinout ................................................................................ 3
Pin Definitions .................................................................. 3
Functional Overview ........................................................ 4
Memory Architecture ........................................................ 4
Two-wire Interface ............................................................ 4
STOP Condition (P) ..................................................... 4
START Condition (S) ................................................... 4
Data/Address Transfer ................................................ 5
Acknowledge/No-acknowledge ................................... 6
High Speed Mode (Hs-mode) ...................................... 6
Slave Device Address ................................................. 6
Addressing Overview .................................................. 7
Data Transfer .............................................................. 7
Memory Operation ............................................................ 7
Write Operation ........................................................... 7
Read Operation ........................................................... 8
Sleep Mode ................................................................. 9
Device ID ......................................................................... 10
Maximum Ratings ........................................................... 11
Operating Range ............................................................. 11
DC Electrical Characteristics ........................................ 11
Document Number: 001-90872 Rev. *J
Data Retention and Endurance ..................................... 12
Capacitance .................................................................... 12
Thermal Resistance ........................................................ 12
AC Test Loads and Waveforms ..................................... 12
AC Test Conditions ........................................................ 12
AC Switching Characteristics ....................................... 13
Power Cycle Timing ....................................................... 14
Ordering Information ...................................................... 15
Ordering Code Definitions ......................................... 15
Package Diagram ............................................................ 16
Acronyms ........................................................................ 17
Document Conventions ................................................. 17
Units of Measure ....................................................... 17
Document History Page ................................................. 18
Sales, Solutions, and Legal Information ...................... 20
Worldwide Sales and Design Support ....................... 20
Products .................................................................... 20
PSoC® Solutions ...................................................... 20
Cypress Developer Community ................................. 20
Technical Support ..................................................... 20
Page 2 of 20
CY15B128J
Pinout
Figure 1. 8-pin SOIC Pinout
A0
1
A1
2
A2
3
VSS
4
Top View
not to scale
8
VDD
7
WP
6
SCL
5
SDA
Pin Definitions
Pin Name
I/O Type
Description
A0–A2
Input
Device Select Address 0–2. These pins are used to select one of up to eight devices of the same type
on the same two-wire bus. To select the device, the address value on the three pins must match the
corresponding bits contained in the slave address. The address pins are pulled down internally.
SDA
Input/Output Serial Data Address. This is a bidirectional pin for the two-wire interface. It is open-drain and is
intended to be wire-AND’d with other devices on the two-wire bus. The input buffer incorporates a
Schmitt trigger for noise immunity and the output driver includes slope control for falling edges. An
external pull-up resistor is required.
SCL
Input
Serial Clock. The serial clock pin for the two-wire interface. Data is clocked out of the part on the falling
edge, and into the device on the rising edge. The SCL input also incorporates a Schmitt trigger input
for noise immunity.
WP
Input
Write Protect. When tied to VDD, addresses in the entire memory map will be write-protected. When
WP is connected to ground, all addresses are write enabled. This pin is pulled down internally.
VSS
Power supply Ground for the device. Must be connected to the ground of the system.
VDD
Power supply Power supply input to the device.
Document Number: 001-90872 Rev. *J
Page 3 of 20
CY15B128J
Functional Overview
operation is complete. This is explained in more detail in Memory
Operation on page 7.
The CY15B128J is a serial F-RAM memory. The memory array
is logically organized as 16,384 × 8 bits and is accessed using a
two-wire (I2C) interface. The functional operation of the F-RAM
is similar to serial EEPROM. The major difference between the
CY15B128J and a serial EEPROM with the same pinout is the
F-RAM’s superior write performance, high endurance, and low
power consumption.
Two-wire Interface
The CY15B128J employs a bidirectional two-wire bus protocol
using few pins or board space. Figure 2 illustrates a typical
system configuration using the CY15B128J in a microcontroller-based system. The two-wire bus is familiar to many users
but is described in this section.
Memory Architecture
By convention, any device that is sending data to the bus is the
transmitter while the target device for this data is the receiver.
The device that is controlling the bus is the master. The master
is responsible for generating the clock signal for all operations.
Any device on the bus that is being controlled is a slave. The
CY15B128J is always a slave device.
When accessing the CY15B128J, the user addresses 16K
locations of eight data bits each. These eight data bits are shifted
in or out serially. The addresses are accessed using the two-wire
protocol, which includes a slave address (to distinguish other
non-memory devices) and a two-byte address. The upper 2 bits
of the address range are ‘don’t care’ values. The complete
address of 14 bits specifies each byte address uniquely.
The bus protocol is controlled by transition states in the SDA and
SCL signals. There are four conditions including START, STOP,
data bit, or acknowledge. Figure 3 on page 5 and Figure 4 on
page 5 illustrate the signal conditions that specify the four states.
Detailed timing diagrams are shown in the electrical
specifications section.
The access time for the memory operation is essentially zero,
beyond the time needed for the serial protocol. That is, the
memory is read or written at the speed of the two-wire bus. Unlike
a serial EEPROM, it is not necessary to poll the device for a
ready condition because writes occur at bus speed. By the time
a new bus transaction can be shifted into the device, a write
The CY15B128J does not meet the NXP I2C specification in the
Fast-mode Plus (Fm+, 1 MHz) for IOL and in the High Speed
Mode (Hs-mode, 3.4 MHz) for Vhys. Refer to the DC Electrical
Characteristics on page 11 for more details.
Figure 2. System Configuration Using Serial (I2C) F-RAM
V DD
RPmin = (VDD - VOLmax) / IOL
RPmax = tr / (0.8473 * Cb)
SDA
Microcontroller
SCL
V DD
V DD
A0
SCL
A0
SCL
A0
SCL
A1
SDA
A1
SDA
A1
SDA
WP
A2
WP
A2
CY15B128J
#0
A2
WP
CY15B128J
CY15B128J
#1
#7
STOP Condition (P)
START Condition (S)
A STOP condition is indicated when the bus master drives SDA
from LOW to HIGH while the SCL signal is HIGH. All operations
using the CY15B128J should end with a STOP condition. If an
operation is in progress when a STOP is asserted, the operation
will be aborted. The master must have control of the SDA (not a
memory read) to assert a STOP condition.
A START condition is indicated when the bus master drives SDA
from HIGH to LOW while the SCL signal is HIGH. All commands
should be preceded by a START condition. An operation in
progress can be aborted by asserting a START condition at any
time. Aborting an operation using the START condition will ready
the CY15B128J for a new operation.
Document Number: 001-90872 Rev. *J
Page 4 of 20
CY15B128J
If during operation the power supply drops below the specified
VDD minimum, the system should issue a START condition prior
to performing another operation.
Figure 3. START and STOP Conditions
full pagewidth
SDA
SDA
SCL
SCL
S
P
STOP Condition
START Condition
Data/Address Transfer
All data transfers (including addresses) take place while the SCL
signal is HIGH. Except under the three conditions described
above, the SDA signal should not change while SCL is HIGH.
Figure 4. Data Transfer on the I2C Bus
handbook, full pagewidth
P
SDA
Acknowledgement
signal from slave
MSB
SCL
S
1
2
7
8
9
ACK
START
condition
Document Number: 001-90872 Rev. *J
Byte complete
1
Acknowledgement
signal from receiver
2
3
4-8
9
ACK
S
S
or
P
STOP or
START
condition
Page 5 of 20
CY15B128J
Acknowledge/No-acknowledge
The acknowledge takes place after the 8th data bit has been
transferred in any transaction. During this state the transmitter
should release the SDA bus to allow the receiver to drive it. The
receiver drives the SDA signal LOW to acknowledge receipt of
the byte. If the receiver does not drive SDA LOW, the condition
is a no-acknowledge and the operation is aborted.
The receiver will fail to acknowledge for two distinct reasons, the
first being that a byte transfer fails. In this case, the
no-acknowledge ceases the current operation so that the part
can be addressed again. This allows the last byte to be
recovered in the event of a communication error.
The second and most common reason is that, the receiver does
not acknowledge to deliberately end an operation. For example,
during a read operation, the CY15B128J will continue to place
data on the bus as long as the receiver sends acknowledges
(and clocks). When a read operation is complete and no more
data is needed, the receiver must not acknowledge the last byte.
If the receiver acknowledges the last byte, this causes the
CY15B128J to attempt to drive the bus on the next clock while
the master is sending a new command such as STOP.
Figure 5. Acknowledge on the I2C Bus
handbook, full pagewidth
DATA OUTPUT
BY MASTER
No Acknowledge
DATA OUTPUT
BY SLAVE
Acknowledge
SCL FROM
MASTER
1
2
8
9
S
Clock pulse for
acknowledgement
START
Condition
High Speed Mode (Hs-mode)
The CY15B128J supports a 3.4-MHz high-speed mode. A
master code (00001XXXb) must be issued to place the device
into the high-speed mode. Communication between master and
slave will then be enabled for speeds up to 3.4 MHz. A STOP
condition will exit Hs-mode. Single- and multiple-byte reads and
writes are supported.
Figure 6. Data Transfer Format in Hs-Mode
handbook, full pagewidth
Hs-mode
F/S-mode
S
MASTER CODE
1 S
SLAVE ADD. R/W 0
F/S-mode
A /1 P
DATA
n (bytes+ ack.)
No Acknowledge
Slave Device Address
The first byte that the CY15B128J expects after a START
condition is the slave address. As shown in Figure 7, the slave
address contains the device type or slave ID, the device select
address bits, and a bit that specifies if the transaction is a read
or a write.
Bits 7–4 are the device type (slave ID) and should be set to
1010b for the CY15B128J. These bits allow other function types
to reside on the two-wire bus within an identical address range.
Bits 3–1 are the device select address bits. They must match the
corresponding value on the external address pins to select the
Document Number: 001-90872 Rev. *J
Hs-mode continues
Acknowledge or
No Acknowledge
SLAVE ADD.
S
device. Up to eight CY15B128J devices can reside on the same
two-wire bus by assigning a different address to each. Bit 0 is the
read/write bit (R/W). R/W = 1 indicates a read operation and
R/W = 0 indicates a write operation.
Figure 7. Memory Slave Device Address
MSB
handbook, halfpage
1
LSB
0
1
Slave ID
0
A2
A1
A0 R/W
Device Select
Page 6 of 20
CY15B128J
Addressing Overview
ences between the CY15B128J and a similar configuration
EEPROM during writes. The complete operation for both writes
and reads is explained below.
After the CY15B128J (as receiver) acknowledges the slave
address, the master can place the memory address on the bus
for a write operation. The address requires two bytes. The
complete 14-bit address is latched internally. Each access
causes the latched address value to be incremented automatically. The current address is the value that is held in the latch;
either a newly written value or the address following the last
access. The current address will be held for as long as power
remains or until a new value is written. Reads always use the
current address. A random read address can be loaded by
beginning a write operation as explained below.
Write Operation
All writes begin with a slave address, then a memory address.
The bus master indicates a write operation by setting the LSB of
the slave address (R/W bit) to a '0'. After addressing, the bus
master sends each byte of data to the memory and the memory
generates an acknowledge condition. Any number of sequential
bytes may be written. If the end of the address range is reached
internally, the address counter will wrap from 3FFFh to 0000h.
Unlike other nonvolatile memory technologies, there is no
effective write delay with F-RAM. Since the read and write
access times of the underlying memory are the same, the user
experiences no delay through the bus. The entire memory cycle
occurs in less time than a single bus clock. Therefore, any
operation including read or write can occur immediately following
a write. Acknowledge polling, a technique used with EEPROMs
to determine if a write is complete is unnecessary and will always
return a ready condition.
After transmission of each data byte, just prior to the
acknowledge, the CY15B128J increments the internal address
latch. This allows the next sequential byte to be accessed with
no additional addressing. After the last address (3FFFh) is
reached, the address latch will roll over to 0000h. There is no
limit to the number of bytes that can be accessed with a single
read or write operation.
Data Transfer
Internally, an actual memory write occurs after the 8th data bit is
transferred. It will be complete before the acknowledge is sent.
Therefore, if the user desires to abort a write without altering the
memory contents, this should be done using START or STOP
condition prior to the 8th data bit. The CY15B128J uses no page
buffering.
After the address bytes have been transmitted, data transfer
between the bus master and the CY15B128J can begin. For a
read operation the CY15B128J will place 8 data bits on the bus
then wait for an acknowledge from the master. If the
acknowledge occurs, the CY15B128J will transfer the next
sequential byte. If the acknowledge is not sent, the CY15B128J
will end the read operation. For a write operation, the
CY15B128J will accept 8 data bits from the master then sends
an acknowledge. All data transfer occurs MSB (most significant
bit) first.
The memory array can be write-protected using the WP pin.
Setting the WP pin to a HIGH condition (VDD) will write-protect
all addresses. The CY15B128J will not acknowledge data bytes
that are written to protected addresses. In addition, the address
counter will not increment if writes are attempted to these
addresses. Setting WP to a LOW state (VSS) will disable the write
protect. WP is pulled down internally.
Memory Operation
The CY15B128J is designed to operate in a manner very similar
to other two-wire interface memory products. The major differences result from the higher performance write capability of
F-RAM technology. These improvements result in some differ-
Figure 8 and Figure 9 illustrate a single-byte and multiple-byte
write cycles in Fast-mode Plus (Fm+). Figure 10 on page 8
illustrates a single-byte write cycles in Hs mode.
Figure 8. Single-Byte Write
By Master
Start
S
Stop
Address & Data
Slave Address
0 A
Address MSB
By F-RAM
A
Address LSB
A
Data Byte
A
P
Acknowledge
Figure 9. Multi-Byte Write
Start
Stop
Address & Data
By Master
S
Slave Address
0 A
By F-RAM
Document Number: 001-90872 Rev. *J
Address MSB
A
Address LSB
A
Data Byte
A
Data Byte
A
P
Acknowledge
Page 7 of 20
CY15B128J
Figure 10. Hs-Mode Byte Write
Start
Start &
Enter Hs-mode
Hs-mode command
By Master
S
0
0
0
0
1
X
X
By F-RAM
1
X
S
Stop &
Exit Hs-mode
Address & Data
Slave Address 0 A
Address MSB
No
Acknowledge
A
Address LSB
A
Data Byte
A P
Acknowledge
Read Operation
There are two basic types of read operations. They are current
address read and selective address read. In a current address
read, the CY15B128J uses the internal address latch to supply
the address. In a selective read, the user performs a procedure
to set the address to a specific value.
Current Address & Sequential Read
As mentioned in the previous paragraph, the CY15B128J uses
an internal latch to supply the address for a read operation. A
current address read uses the existing value in the address latch
as a starting place for the read operation. The system reads from
the address immediately following that of the last operation.
To perform a current address read, the bus master supplies a
slave address with the LSB set to a ‘1’. This indicates that a read
operation is requested. After receiving the complete slave
address, the CY15B128J will begin shifting out data from the
current address on the next clock. The current address is the
value held in the internal address latch.
Beginning with the current address, the bus master can read any
number of bytes. Thus, a sequential read is simply a current
address read with multiple byte transfers. After each byte, the
internal address counter will be incremented.
Note Each time the bus master acknowledges a byte, this
indicates that the CY15B128J should read out the next
sequential byte.
There are four ways to properly terminate a read operation.
Failing to properly terminate the read will most likely create a bus
contention as the CY15B128J attempts to read out additional
data onto the bus. The four valid methods are:
1. The bus master issues a no-acknowledge in the 9th clock
cycle and a STOP in the 10th clock cycle. This is illustrated in
the following diagrams. This method is preferred.
2. The bus master issues a no-acknowledge in the 9th clock
cycle and a START in the 10th.
3. The bus master issues a STOP in the 9th clock cycle.
4. The bus master issues a START in the 9th clock cycle.
Figure 11. Current Address Read
By Master
Start
No
Acknowledge
Address
Stop
S
Slave Address
By F-RAM
1 A
Acknowledge
Data Byte
1
P
Data
Figure 12. Sequential Read
By Master
Start
No
Acknowledge
Acknowledge
Address
Stop
S
Slave Address
By F-RAM
Document Number: 001-90872 Rev. *J
1 A
Acknowledge
Data Byte
A
Data Byte
1 P
Data
Page 8 of 20
CY15B128J
Figure 13. Hs-Mode Current Address Read
Start
By Master
S
0
0
0
0
1
X
No
Acknowledge
Start &
Enter Hs-mode Address
Hs-mode command
X
1
X
By F-RAM
S
Slave Address 1 A
No
Acknowledge
Selective (Random) Read
There is a simple technique that allows a user to select a random
address location as the starting point for a read operation. This
involves using the first three bytes of a write operation to set the
internal address followed by subsequent read operations.
Stop &
Exit Hs-mode
Data Byte
Acknowledge
1
P
Data
To perform a selective read, the bus master sends out the slave
address with the LSB (R/W) set to 0. This specifies a write
operation. According to the write protocol, the bus master then
sends the address bytes that are loaded into the internal address
latch. After the CY15B128J acknowledges the address, the bus
master issues a START condition. This simultaneously aborts
the write operation and allows the read command to be issued
with the slave address LSB set to a ‘1’. The operation is now a
current address read.
Figure 14. Selective (Random) Read
Start
Address
By Master
Start
No
Acknowledge
Address
Stop
S
Slave Address
0 A
Address MSB
A
Address LSB
By F-RAM
A
S
Slave Address
1 A
A low power mode called Sleep Mode is implemented on the
CY15B128J device. The device will enter this low-power state
when the Sleep command 86h is clocked-in. Sleep Mode entry
can be entered as follows:
1. The master sends a START command.
2. The master sends Reserved Slave ID 0xF8.
3. The CY15B128J sends an ACK.
4. The master sends the I2C-bus slave address of the slave
device it needs to identify. The last bit is a ‘Don’t care’ value
(R/W bit). Only one device must acknowledge this byte (the
one that has the I2C-bus slave address).
5. The CY15B128J sends an ACK.
1 P
Data
Acknowledge
Sleep Mode
Data Byte
6. The master sends a Re-START command.
7. The master sends Reserved Slave ID 0x86.
8. The CY15B128J sends an ACK.
9. The master sends STOP to ensure the device enters sleep
mode.
Once in sleep mode, the device draws IZZ current, but the device
continues to monitor the I2C pins. Once the master sends a
Slave Address that the CY15B128J identifies, it will “wake-up”
and be ready for normal operation within tREC (400 s max.). As
an alternative method of determining when the device is ready,
the master can send read or write commands and look for an
ACK. While the device is waking up, it will NACK the master until
it is ready.
Figure 15. Sleep Mode Entry
Start
Address
By Master
S
Rsvd Slave ID (F8)
By F-RAM
Document Number: 001-90872 Rev. *J
A
Start
Slave Address
X A
S
Address
Rsvd Slave ID (86)
Stop
A
P
Acknowledge
Page 9 of 20
CY15B128J
Device ID
The CY15B128J device incorporates a means of identifying the device by providing three bytes of data, which are manufacturer,
product ID, and die revision. The Device ID is read-only. It can be accessed as follows:
1. The master sends a START command.
6. The master sends a Re-START command.
2. The master sends Reserved Slave ID 0xF8
7. The master sends Reserved Slave ID 0xF9.
3. The CY15B128J sends an ACK.
8. The CY15B128J sends an ACK.
4. The master sends the I2C-bus slave address of the slave
9. The Device ID Read can be done, starting with 12
device it needs to identify. The last bit is a ‘Don’t care’ value
manufacturer bits, followed by the nine part identification bits,
(R/W bit). Only one device must acknowledge this byte (the
and then the three die revision bits.
one that has the I2C-bus slave address).
10.The master ends the Device ID read sequence by NACKing
5. The CY15B128J sends an ACK.
the last byte, thus resetting the slave device state machine
and allowing the master to send the STOP command.
Note The reading of the Device ID can be stopped any time by sending a NACK command.
Table 1. Device ID
Device ID Description
23–12
(12 bits)
Device ID
(3 bytes)
11–8
(4 bits)
2–0
(3 bits)
Product ID
Manufacturer ID
004121h
7–3
(5 bits)
000000000100
Density
Variation
Die Rev
0001
00100
001
Note Product ID bits 0 and 4 are reserved.
Figure 16. Read Device ID
Start
Address
By Master
Start
No
Acknowledge
Acknowledge
Address
Stop
S
Rsvd Slave ID (F8)
A
Slave Address
By F-RAM
Document Number: 001-90872 Rev. *J
A
S
Acknowledge
Rsvd Slave ID (F9)
A
Data Byte
A
Data Byte
A
Data Byte
1
P
Data
Page 10 of 20
CY15B128J
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 °C to +125 °C
Maximum accumulated storage time
At 125 °C ambient temperature ................................. 1000 h
At 85 °C ambient temperature ................................ 10 Years
Ambient temperature
with power applied ................................... –55 °C to +125 °C
Supply voltage on VDD relative to VSS .........–1.0 V to +4.5 V
Input voltage* ......... –1.0 V to + 4.5 V and VIN < VDD + 1.0 V
DC voltage applied to outputs
in HI-Z state ........................................ –0.5 V to VDD + 0.5 V
Package power dissipation capability
(TA = 25 °C) ................................................................. 1.0 W
Surface mount lead soldering temperature
(3 seconds) .............................................................. +260 °C
Electrostatic discharge voltage
Human Body Model (JEDEC Std JESD22-A114-B) .............. 2 kV
Charged Device Model (JEDEC Std JESD22-C101-A) ........ 500 V
Latch-up current .................................................... > 140 mA
* Exception: The “VIN < VDD + 1.0 V” restriction does not apply
to the SCL and SDA inputs.
Operating Range
Range
Ambient Temperature (TA)
Automotive-A
–40 C to +85 C
VDD
2.0 V to 3.6 V
Transient voltage (< 20 ns)
on any pin to ground potential ............ –2.0 V to VDD + 2.0 V
DC Electrical Characteristics
Over the Operating Range
Parameter
Description
VDD
Power supply
IDD
Average VDD current
ISB
VDD standby current
IZZ
Sleep mode current
ILI
VIL
VOL[3]
Input leakage current
(Except WP and A2–A0)
Input leakage current
(for WP and A2–A0)
Output leakage current
Input HIGH voltage (SDL, SDA)
Input HIGH voltage (WP, A2–A0)
Input LOW voltage
Output LOW voltage
Rin[4]
Input resistance (WP, A2-A0)
Vhys[5]
Hysteresis of Schmitt Trigger
inputs
ILO
VIH
Test Conditions
fSCL = 100 kHz
SCL toggling
between
fSCL = 1 MHz
VDD – 0.2 V and
VSS, other inputs fSCL = 3.4 MHz
VSS or VDD – 0.2 V.
SCL = SDA = VDD.All other inputs VSS
or VDD. Stop command issued.
SCL = SDA = VDD.All other inputs VSS
or VDD. Stop command issued.
VSS < VIN < VDD
VSS < VIN < VDD
VSS < VOUT < VDD
IOL = 3 mA
IOL = 6 mA
For VIN = VIL(Max)
For VIN = VIH(Min)
fSCL = 100 kHz,
400 kHz, 1 MHz
fSCL = 3.4 MHz
Min
2.0
–
–
–
Typ [2]
3.3
–
–
–
Max
3.6
175
400
1000
Unit
V
A
A
A
–
90
150
A
–
5
8
A
–1
–
+1
A
–1
–
+100
A
–1
0.7 × VDD
0.7 × VDD
–0.3
–
–
50
1
0.05 × VDD
–
–
–
–
–
–
–
–
–
0.06 × VDD
–
+1
A
VDD(max) + 0.3 V
VDD + 0.3
V
0.3 × VDD
V
0.4
V
0.6
V
–
k
–
M
–
V
–
V
Notes
2. Typical values are at 25 °C, VDD = VDD(typ). Not 100% tested.
3. The CY15B128J does not meet the NXP I2C specification in the Fast-mode Plus (Fm+, 1 MHz) for IOL of 20 mA at a VOL of 0.4 V.
4. The input pull-down circuit is strong (50 k) when the input voltage is below VIL and weak (1 M) when the input voltage is above VIH.
5. The CY15B128J does not meet the NXP I2C specification in the High Speed Mode (Hs-mode, 3.4 MHz) for Vhys of 0.1 × VDD.
Document Number: 001-90872 Rev. *J
Page 11 of 20
CY15B128J
Data Retention and Endurance
Parameter
TDR
NVC
Description
Test condition
TA = 85 C
Data retention
Endurance
Min
Max
Unit
10
–
Years
TA = 75 C
38
–
TA = 65 C
151
–
Over operating temperature
1014
–
Cycles
Capacitance
Parameter [6]
Description
Max
Unit
8
pF
6
pF
Test Conditions
8-pin SOIC
Unit
Test conditions follow standard test methods and procedures for measuring thermal impedance, per
EIA/JESD51.
146
C/W
48
C/W
capacitance TA = 25 C, f = 1 MHz, VDD = VDD(typ)
CIO
Input/Output
(SDA)
CI
Input pin capacitance
pin
Test Conditions
Thermal Resistance
Parameter [6]
Description
JA
Thermal resistance
(junction to ambient)
JC
Thermal resistance
(junction to case)
AC Test Loads and Waveforms
Figure 17. AC Test Loads and Waveforms
3.0 V
867
OUTPUT
100 pF
AC Test Conditions
Input pulse levels .................................10% and 90% of VDD
Input rise and fall times .................................................10 ns
Input and output timing reference levels ................0.5 × VDD
Output load capacitance ............................................ 100 pF
Note
6. These parameters are guaranteed by design and are not tested.
Document Number: 001-90872 Rev. *J
Page 12 of 20
CY15B128J
AC Switching Characteristics
Over the Operating Range
Parameter[7]
Cypress
Parameter
Fast-mode Plus (Fm+)[9]
Description
Alt.
Parameter
Hs-mode[9]
Unit
Min
Max
Min
Max
–
1.0
–
3.4
MHz
fSCL[8]
SCL clock frequency
tSU; STA
Start condition setup for repeated Start
260
–
160
–
ns
tHD;STA
Start condition hold time
260
–
160
–
ns
tLOW
Clock LOW period
500
–
160
–
ns
tHIGH
Clock HIGH period
260
–
60
–
ns
tSU;DAT
tSU;DATA
Data in setup
50
–
10
–
ns
tHD;DAT
tHD;DATA
Data in hold
0
–
0
70
ns
Data output hold (from SCL at VIL)
0
–
0
–
ns
tDH
[10]
tr
Input rise time
–
120
10
80
ns
tF[10]
tf
Input fall time
20 × (VDD / 5.5 V)
120
10
80
ns
tR
tSU;STO
tAA
STOP condition setup
tVD;DATA
tVD;ACK
tOF
[10]
260
–
160
–
ns
SCL LOW to SDA Data Out Valid
–
450
–
130
ns
ACK output valid time
–
450
–
130
ns
20 × (VDD/5.5 V)
120
–
80
ns
500
–
300
–
ns
0
50
–
5
ns
Output fall time from VIH min to VILmax
tBUF
Bus free before new transmission
tSP
Noise suppression time constant on SCL, SDA
Figure 18. Read Bus Timing Diagram
tR
`
tF
tHIGH
tSP
tLOW
tSP
SCL
tSU:SDA
1/fSCL
tBUF
tHD:DAT
tSU:DAT
SDA
Start
tDH
tAA
Stop Start
Acknowledge
Figure 19. Write Bus Timing Diagram
tHD:DAT
SCL
tHD:STA
tSU:STO
tSU:DAT
tAA
SDA
Start
Stop Start
Acknowledge
Notes
7. Test conditions assume signal transition time of 10 ns or less, timing reference levels of VDD/2, input pulse levels of 0 to VDD(typ), and output loading of the specified
IOL and 100 pF load capacitance shown in Figure 17 on page 12.
8. The speed-related specifications are guaranteed characteristic points along a continuous curve of operation from DC to fSCL(max).
9. Bus Load (Cb) considerations; Cb < 550 pF for I2C clock frequency (SCL) 1 MHz; Cb < 100 pF for SCL at 3.4 MHz.
10. These parameters are guaranteed by design and are not tested.
Document Number: 001-90872 Rev. *J
Page 13 of 20
CY15B128J
Power Cycle Timing
Over the Operating Range
Parameter
Description
Min
Max
Unit
250
–
μs
tPU
Power-up VDD(min) to first access (START condition)
tPD
Last access (STOP condition) to power-down (VDD(min))
0
–
µs
tVR [11, 12]
VDD power-up ramp rate
50
–
µs/V
tVF [11, 12]
VDD power-down ramp rate
100
–
µs/V
tREC
Recovery time from sleep mode
–
400
µs
VDD
~
~
Figure 20. Power Cycle Timing
VDD(min)
tVR
SDA
I2 C START
tVF
tPD
~
~
tPU
VDD(min)
I2 C STOP
Notes
11. Slope measured at any point on the VDD waveform.
12. These parameters are guaranteed by design and are not tested.
Document Number: 001-90872 Rev. *J
Page 14 of 20
CY15B128J
Ordering Information
Package
Diagram
Ordering Code
Package Type
CY15B128J-SXA
51-85066
8-pin SOIC
CY15B128J-SXAT
51-85066
8-pin SOIC
Operating
Range
Automotive-A
All these parts are Pb-free. Contact your local Cypress sales representative for availability of these parts.
Ordering Code Definitions
CY 15
B
128 J - S
X
A
X
Option: X = blank or T
blank = Standard; T = Tape and Reel
Temperature Range:
A = Automotive-A (–40 C to +85 C)
X = Pb-free
Package Type: S = 8-pin SOIC
J = I2C F-RAM
Density: 128 = 128-Kbit
Voltage: B = 2.0 V to 3.6 V
F-RAM
Cypress
Document Number: 001-90872 Rev. *J
Page 15 of 20
CY15B128J
Package Diagram
Figure 21. 8-pin SOIC (150 Mils) Package Outline, 51-85066
51-85066 *I
Document Number: 001-90872 Rev. *J
Page 16 of 20
CY15B128J
Acronyms
Acronym
Document Conventions
Description
Units of Measure
ACK
Acknowledge
CMOS
Complementary Metal Oxide Semiconductor
°C
degree Celsius
EIA
Electronic Industries Alliance
Hz
hertz
I2C
Inter-Integrated Circuit
Kb
1024 bit
I/O
Input/Output
kHz
kilohertz
JEDEC
Joint Electron Devices Engineering Council
k
kilohm
LSB
Least Significant Bit
MHz
megahertz
MSB
Most Significant Bit
M
megaohm
NACK
No Acknowledge
A
microampere
RoHS
Restriction of Hazardous Substances
s
microsecond
R/W
Read/Write
mA
milliampere
SCL
Serial Clock Line
ms
millisecond
ns
nanosecond
SDA
Serial Data Access
ohm
SOIC
Small Outline Integrated Circuit
%
percent
WP
Write Protect
pF
picofarad
V
volt
W
watt
Document Number: 001-90872 Rev. *J
Symbol
Unit of Measure
Page 17 of 20
CY15B128J
Document History Page
Document Title: CY15B128J, 128-Kbit (16K × 8) Automotive Serial (I2C) F-RAM
Document Number: 001-90872
Rev.
ECN No.
Orig. of
Change
Submission
Date
**
4266210
GVCH
01/29/2014
New data sheet.
*A
4390913
GVCH
06/20/2014
Changed status from Advance to Preliminary.
Updated Device ID:
Updated Table 1:
Replaced 004101h with 004121h in “Device ID (3 bytes)” column.
Updated Maximum Ratings:
Removed “Machine Model” under “Electrostatic Discharge Voltage”.
Updated DC Electrical Characteristics:
Added typical values for ISB and IZZ parameters.
Splitted VIH parameter into two rows namely “SDL, SDA” and “WP, A2–A0”.
Changed maximum value of VIH parameter from VDD + 0.5 V to
VDD(max) + 0.3 V corresponding to “SDA, SCL”.
Changed maximum value of VIH parameter from VDD + 0.5 V to
VDD(max) + 0.3 V corresponding to “WP, A2–A0”.
Changed minimum value of VIL parameter from –0.5 V to –0.3 V.
Removed VOL1 parameter and its details.
Removed VOL2 parameter and its details.
Added VOL parameter and its details.
Added Vhys parameter and its details.
Updated Capacitance:
Removed CO parameter and its details.
Added CIO parameter and its details.
Updated AC Switching Characteristics:
Added values of tOF, tBUF, tAA, tVD;ACK parameters corresponding to “Hs-mode”.
Removed Note “In Hs-mode and VDD < 2.7 V, the tSU:DAT (min.) spec is 15 ns.”
and its reference.
Completing Sunset Review.
*B
4512788
GVCH
09/24/2014
Updated DC Electrical Characteristics:
Added Note 3 (for the difference in IOL with respect to I2C specification) and
referred the same note in VOL parameter.
*C
4571858
GVCH
11/18/2014
Updated DC Electrical Characteristics:
Changed minimum value of Vhys parameter from 0.1 × VDD to 0.05 × VDD
corresponding to Test Condition “fSCL = 3.4 MHz”.
Added Note 5 (for the difference in Vhys with respect to I2C specification) and
referred the same note in Vhys parameter.
*D
4596783
GVCH
12/17/2014
Updated Features:
Added Note 1 (for the difference in IOL and Vhys with respect to NXP I2C
specification) and referred the same note in “Up to 3.4 MHz frequency”.
Updated Two-wire Interface:
Updated description (Added description for the difference in IOL and Vhys with
respect to NXP I2C specification).
Updated DC Electrical Characteristics:
Updated Note 3.
Changed minimum value of Vhys parameter from 0.05 × VDD to 0.06 × VDD
corresponding to Test Condition “fSCL = 3.4 MHz”.
Updated Note 5 (for the difference in Vhys with respect to NXP I2C
specification).
Document Number: 001-90872 Rev. *J
Description of Change
Page 18 of 20
CY15B128J
Document History Page (continued)
Document Title: CY15B128J, 128-Kbit (16K × 8) Automotive Serial (I2C) F-RAM
Document Number: 001-90872
Rev.
ECN No.
Orig. of
Change
Submission
Date
*D (cont.)
4596783
GVCH
12/17/2014
Updated to new template.
Completing Sunset Review.
*E
4786735
GVCH
06/04/2015
Changed status from Preliminary to Final.
Updated Package Diagram:
spec 51-85066 – Changed revision from *F to *G.
*F
4883131
ZSK / PSR
09/03/2015
Updated Functional Description:
Added “For a complete list of related documentation, click here.” at the end.
Updated Maximum Ratings:
Removed “Maximum junction temperature” and its corresponding details.
Added “Maximum accumulated storage time” and its corresponding details.
Added “Ambient temperature with power applied” and its corresponding
details.
*G
5084247
GVCH
01/13/2016
Updated Ordering Information:
Updated part numbers.
Updated Package Diagram:
spec 51-85066 – Changed revision from *G to *H.
*H
5452686
ZSK
09/28/2016
Updated Power Cycle Timing:
Changed minimum value of tPU parameter from 1 ms to 250 μs.
Updated to new template.
*I
6043605
GVCH
01/24/2018
Updated Package Diagram:
spec 51-85066 – Changed revision from *H to *I.
Updated to new template.
Completing Sunset Review.
*J
6420472
GVCH
12/24/2018
Updated Maximum Ratings:
Replaced “–55 °C to +125 °C” with “–65 °C to +125 °C” in ratings corresponding
to “Storage temperature”.
Updated to new template.
Document Number: 001-90872 Rev. *J
Description of Change
Page 19 of 20
CY15B128J
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at Cypress Locations.
PSoC® Solutions
Products
Arm® Cortex® Microcontrollers
Automotive
cypress.com/arm
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Interface
cypress.com/clocks
cypress.com/interface
Internet of Things
Memory
cypress.com/iot
cypress.com/memory
Microcontrollers
cypress.com/mcu
PSoC
cypress.com/psoc
Power Management ICs
Touch Sensing
USB Controllers
Wireless Connectivity
PSoC 1 | PSoC 3 | PSoC 4 | PSoC 5LP | PSoC 6 MCU
Cypress Developer Community
Community | Projects | Video | Blogs | Training | Components
Technical Support
cypress.com/support
cypress.com/pmic
cypress.com/touch
cypress.com/usb
cypress.com/wireless
© Cypress Semiconductor Corporation, 2014–2018. This document is the property of Cypress Semiconductor Corporation and its subsidiaries, including Spansion LLC (“Cypress”). This document,
including any software or firmware included or referenced in this document (“Software”), is owned by Cypress under the intellectual property laws and treaties of the United States and other countries
worldwide. Cypress reserves all rights under such laws and treaties and does not, except as specifically stated in this paragraph, grant any license under its patents, copyrights, trademarks, or other
intellectual property rights. If the Software is not accompanied by a license agreement and you do not otherwise have a written agreement with Cypress governing the use of the Software, then Cypress
hereby grants you a personal, non-exclusive, nontransferable license (without the right to sublicense) (1) under its copyright rights in the Software (a) for Software provided in source code form, to
modify and reproduce the Software solely for use with Cypress hardware products, only internally within your organization, and (b) to distribute the Software in binary code form externally to end users
(either directly or indirectly through resellers and distributors), solely for use on Cypress hardware product units, and (2) under those claims of Cypress’s patents that are infringed by the Software (as
provided by Cypress, unmodified) to make, use, distribute, and import the Software solely for use with Cypress hardware products. Any other use, reproduction, modification, translation, or compilation
of the Software is prohibited.
TO THE EXTENT PERMITTED BY APPLICABLE LAW, CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS DOCUMENT OR ANY SOFTWARE
OR ACCOMPANYING HARDWARE, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. No computing
device can be absolutely secure. Therefore, despite security measures implemented in Cypress hardware or software products, Cypress does not assume any liability arising out of any security breach,
such as unauthorized access to or use of a Cypress product. In addition, the products described in these materials may contain design defects or errors known as errata which may cause the product
to deviate from published specifications. To the extent permitted by applicable law, Cypress reserves the right to make changes to this document without further notice. Cypress does not assume any
liability arising out of the application or use of any product or circuit described in this document. Any information provided in this document, including any sample design information or programming
code, is provided only for reference purposes. It is the responsibility of the user of this document to properly design, program, and test the functionality and safety of any application made of this
information and any resulting product. Cypress products are not designed, intended, or authorized for use as critical components in systems designed or intended for the operation of weapons, weapons
systems, nuclear installations, life-support devices or systems, other medical devices or systems (including resuscitation equipment and surgical implants), pollution control or hazardous substances
management, or other uses where the failure of the device or system could cause personal injury, death, or property damage (“Unintended Uses”). A critical component is any component of a device
or system whose failure to perform can be reasonably expected to cause the failure of the device or system, or to affect its safety or effectiveness. Cypress is not liable, in whole or in part, and you
shall and hereby do release Cypress from any claim, damage, or other liability arising from or related to all Unintended Uses of Cypress products. You shall indemnify and hold Cypress harmless from
and against all claims, costs, damages, and other liabilities, including claims for personal injury or death, arising from or related to any Unintended Uses of Cypress products.
Cypress, the Cypress logo, Spansion, the Spansion logo, and combinations thereof, WICED, PSoC, CapSense, EZ-USB, F-RAM, and Traveo are trademarks or registered trademarks of Cypress in
the United States and other countries. For a more complete list of Cypress trademarks, visit cypress.com. Other names and brands may be claimed as property of their respective owners.
Document Number: 001-90872 Rev. *J
Revised December 24, 2018
Page 20 of 20
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