CY27H010-35WC

1CY 27H0 10 fax id: 3023 CY27H010 128K x 8 High-Speed CMOS EPROM Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max. (commercial) — tAA = 35 ns max. (military) • Low power — 275 mW max. • • • • • — Less than 85 mW when deselected Byte-wide memory organization 100% reprogrammable in thewindowed package EPROM technology Capable of withstanding >2001V static discharge Available in — 32-pin PLCC — 32-pin TSOP-I — 32-pin, 600-mil plastic or hermetic DIP — 32-pin hermetic LCC try-standard 32-pin, 600-mil DIP, LCC, PLCC, and TSOP-I packages. These devices offer high-density storage combined with 40-MHz performance. The CY27H010 is available in windowed and opaque packages. Windowed packages allow the device to be erased with UV light for 100% reprogrammability. The CY27H010 is equipped with a power-down chip enable (CE) input and output enable (OE). When CE is deasserted, the device powers down to a low-power stand-by mode. The OE pin three-states the outputs without putting the device into stand-by mode. While CE offers lower power, OE provides a more rapid transition to and from three-stated outputs. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms. The EPROM cell requires only 12.75 V for the supervoltage and low programming current allows for gang programming. The device allows for each memory location to be tested 100%, because each location is written to, erased, and repeatedly exercised prior to encapsulation. Each device is also tested for AC performance to guarantee that the product will meet DC and AC specification limits after customer programming. The CY27H010 is read by asserting both the CE and the OE inputs. The contents of the memory location selected by the address on inputs A16–A0 will appear at the outputs O7–O0. Functional Description The CY27H010 is a high-performance, 1-megabit CMOS EPROM organized in 128 Kbytes. It is available in indus- Logic Block Diagram A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 POWER DOWN O7 O5 O6 ADDRESS DECODER MULTIPLEXER O4 O3 O1 PROGRAMMABLE ARRAY O2 O0 Pin Configurations DIP Top View VPP A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 O0 O1 O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC PGM NC A14 A13 A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3 H010–2 LCC/PLCC Top View CE OE OUTPUT ENABLE DECODER H010–1 A7 A6 A5 A4 A3 A2 A1 A0 O0 4 3 2 1 32 31 30 29 5 28 6 27 7 26 8 25 9 24 10 23 11 22 12 21 13 14151617 181920 A14 A13 A8 A9 A11 OE A10 CE O7 H010–3 Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600 August 1994 – Revised March 1997 CY27H010 Pin Configurations (continued) TSOP Top View A11 A9 A8 A13 A14 NC PGM VCC VPP A16 A15 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE/VFY A10 CE O7 O6 O5 O4 O3 GND O2 O1 O0 A0 A1 A2 A3 H010–4 Selection Guide 27H010–25 Maximum Access Time (ns) CE Access Time (ns) CE Access Time (ns) OE Access Time (ns) OE Access Time (ns) ICC[1] (mA) Power Supply Current ISB[2] (mA) Stand-by Current Com’l Mil Com’l Mil Com’l Mil Com’l Mil 15 15 75 75 12 20 25 30 27H010–30 30 30 27H010–35 35 40 40 20 20 50 85 15 25 M aximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage to Ground Potential ............... –0.5V to +7.0V DC Voltage Applied to Outputs in High Z State ............................................... –0.5V to +5.5V DC Input Voltage............................................ –3.0V to +7.0V Transient Input Voltage ................................–3.0V for 2001V (per MIL-STD-883, Method 3015) Latch-Up Current ..................................................... >200 mA Operating Range Range Commercial Industrial[3] Military[4] Ambient Temperature 0°C to +70°C –40°C to +85°C –55°C to +125°C VCC 5V ± 10% 5V ± 10% 5V ± 10% 2 CY27H010 Electrical Characteristics Over the Operating Range[5, 6] 27H010–25 27H010–30 Parameter VOH VOL VIH VIL IIX IOZ ICC Description Output HIGH Voltage Output LOW Voltage Input HIGH Level Input LOW Level Input Leakage Current Output Leakage Current Power Supply Current Test Conditions VCC = Min., IOH = –4.0 mA VCC = Min., IOL = 12.0 mA Guaranteed Input Logical HIGH Voltage for All Inputs Guaranteed Input Logical LOW Voltage for All Inputs GND < VIN < VCC GND < VOUT < VCC, Output Disable VCC=Max., IOUT=0 mA, f=10 MHz VCC=Max., CE = VIH Com’l Mil Com’l Mil 15 –10 –10 2.0 Min. 2.4 0.45 VCC+0.5 0.8 +10 +10 75 –10 –10 2.0 Max. 27H010–35 Min. 2.4 0.45 VCC+0.5 0.8 +10 +10 50 85 15 25 Max. Unit V V V V µA µA mA mA mA mA ISB Stand-By Current Capacitance[6] Parameter CIN COUT Description Input Capacitance Output Capacitance Test Conditions TA = 25°C, f = 1 MHz, VCC = 5.0V Max. 10 12 Unit pF pF Notes: 5. See the last page of this specification for Group A subgroup testing information. 6. See Introduction to CMOS PROMs in this Data Book for general information on testing. AC Test Loads and Waveforms R1 318 Ω 5V OUTPUT 30 pF INCLUDING JIG AND SCOPE R2 197Ω 5V OUTPUT 5 pF INCLUDING JIG AND SCOPE R2 197Ω R1 318 Ω 3.0V 90% GND ≤ 3 ns 10% 90% 10% ≤ 3 ns ALL INPUT PULSES (a) Equivalent to: OUTPUT THÉVENIN EQUIVALENT 121Ω 1.91V (b) H010–5 H010–6 Switching Characteristics Over the Operating Range 27H010–25 Parameter tAA tOE tHZOE Description Address to Output Valid OE Active to Output Valid OE Inactive to High Z Min. Max. 25 12 12 27H010–30 Min. Max. 30 20 20 27H010–35 Min. Max. 35 20 20 Unit ns ns ns 3 CY27H010 Switching Characteristics Over the Operating Range (continued) 27H010–25 Parameter tCE tHZCE tPU tPD tOH Description CE Active to Output Valid CE Inactive to High Z CE Active to Power-Up CE Inactive to Power-Down Output Data Hold 0 0 30 0 Min. Max. 30 12 0 35 0 27H010–30 Min. Max. 30 20 0 40 27H010–35 Min. Max. 40 20 Unit ns ns ns ns ns Switching Waveform ICC tPU CE tPD OE A0 – A16 ADDR A tAA tCE tAA ADDR B tHZOE tOH tOE tHZCE DATA B H010–7 O0 – O7 DATA A DATA B Erasure Characteristics Wavelengths of light less than 4000 Angstroms begin to erase the CY27H010 in the windowed package. For this reason, an opaque label should be placed over the window if the EPROM is exposed to sunlight or fluorescent lighting for extended periods of time. The recommended dose of ultraviolet light for erasure is a wavelength of 2537 Angstroms for a minimum dose (UV intensity multiplied by exposure time) of 25 Wsec/cm2. For an ultraviolet lamp with a 12 mW/cm2 power rating, the exposure time would be approximately 35 minutes. The CY27H010 needs to be within 1 inch of the lamp during erasure. Perma- nent damage may result if the EPROM is exposed to high-intensity UV light for an extended period of time. 7258 Wsec/cm2 is the recommended maximum dosage. Programming Modes Programming support is available from Cypress as well as from a number of third-party software vendors. For detailed programming information, including a listing of software packages, please see the PROM Programming Information located at the end of this section. Programming algorithms can be obtained from any Cypress representative. 4 CY27H010 Table 1. Programming Electrical Characteristics Parameter VPP IPP VIHP VILP VCCP Table 2. Mode Selection Pin Function[7] Mode Read Output Disable Stand-by Program Program Verify Program Inhibit Signature Read Signature Read (MFG)[9] (DEV)[9] CE VIL X VIH VILP VILP VIHP VIL VIL OE VIL VIH X VIHP VILP X VIL VIL PGM X X X VILP VIHP X X X VPP X X X VPP VPP VPP VIH VIH A0 A0 X X A0 A0 X VIL VIH A9 A9 X X A9 A9 X VHV VHV [8] [8] Description Programming Power Supply Programming Supply Current Programming Input Voltage HIGH Programming Input Voltage LOW Programming VCC Min. 12.5 3.0 –0.5 6.0 Max. 13 50 VCC 0.4 6.5 Unit V mA V V V Data Dout High Z High Z Din Dout High Z 34H 1DH Notes: 7. X can be V IL or VIH. 8. VHV=12V ±0.5V 9. A1 − A8 a nd A10 − A16 = V IL 5 CY27H010 Typical DC and AC Characteristics NORMALIZED SUPPLY CURRENT vs. CYCLE PERIOD 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.0 50 100 150 200 CLOCK PERIOD (ns) 250 VCC =5.5V TA =25 °C 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 4 NORMALIZED SUPPLY CURRENT vs. SUPPLY VOLTAGE 1.25 1.2 1.15 f = 10 MHz TA =25°C 1.1 1.05 1.0 0.95 0.9 0.85 0.8 –100 VCC =5.5V f = 10 MHz OUTPUT SOURCE CURRENT vs. OUTPUT VOLTAGE 4.5 5 5.5 6 –50 0 50 100 150 SUPPLY VOLTAGE (V) AMBIENT TEMPERATURE ( °C) 1.25 1.2 1.15 1.1 1.05 1.0 0.95 0.9 0.85 NORMALIZED ACCESS TIME vs. SUPPLY VOLTAGE 1.4 1.3 TA = 25°C 1.2 1.1 1.0 0.9 4 4.5 5 5.5 6 NORMALIZED ACCESS TIME vs. AMBIENT TEMPERATURE 120 100 VCC =4.5V 80 60 40 20 –50 0 50 100 150 OUTPUT SINK CURRENT vs. OUTPUT VOLTAGE VCC =5.0V TA =25°C 0.8 –100 0 0.0 1.0 2.0 3.0 4.0 SUPPLY VOLTAGE (V) AMBIENT TEMPERATURE (°C) OUTPUT VOLTAGE (V) OUTPUT SOURCE CURRENT vs. OUTPUT VOLTAGE –100 –80 –60 –40 –20 0.0 0.0 1.0 2.0 3.0 4.0 5.0 OUTPUT VOLTAGE (V) H010–8 6 CY27H010 Ordering Information[10] Speed (ns) 25 30 Ordering Code CY27H010–25JC CY27H010–25ZC CY27H010–30JC CY27H010–30PC CY27H010–30WC CY27H010–30ZC 35 CY27H010–35JC CY27H010–35PC CY27H010–35WC CY27H010–35ZC CY27H010–35WMB CY27H010–35QMB Package Name J65 Z32 J65 P19 W20 Z32 J65 P19 W20 Z32 W20 Q55 Package Type 32-Lead Plastic Leaded Chip Carrier 32-Lead Thin Small Outline Package 32-Lead Plastic Leaded Chip Carrier 32-Lead (600-Mil) Molded DIP 32-Lead (600-Mil) Windowed CerDIP 32-Lead Thin Small Outline Package 32-Lead Plastic Leaded Chip Carrier 32-Lead (600-Mil) Molded DIP 32-Lead (600-Mil) Windowed CerDIP 32-Lead Thin Small Outline Package 32-Lead (600-Mil) Windowed CerDIP 32-Pin Windowed Rectangular Leadless Chip Carrier Military Commercial Commercial Operating Range Commercial Note: 10. Most of the above products are available in industrial temperature range. Contact a Cypress representative for specifications and product availability. MILITARY SPECIFICATIONS Group A Subgroup Testing DC Characteristics Parameter VOH VOL VIH VIL IIX IOZ ICC ISB Subgroups 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 Switching Characteristics Parameter tAA tOE tCE Subgroups 7, 8, 9, 10, 11 7, 8, 9, 10, 11 7, 8, 9, 10, 11 Document #: 38–00171–D 7 CY27H010 Package Diagrams 32-Lead Plastic Leaded Chip Carrier J65 32-Pin Windowed Rectangular Leadless Chip Carrier MIL-STD-1835 C-12 32-Lead (600-Mil) Molded DIP P19 8 CY27H010 Package Diagrams (continued) 32-Lead (600-Mil) Windowed CerDIP W20 32-Lead Thin Small Outline Package Z32 © Cypress Semiconductor Corporation, 1997. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.