Please note that Cypress is an Infineon Technologies Company.
The document following this cover page is marked as “Cypress” document as this is the
company that originally developed the product. Please note that Infineon will continue
to offer the product to new and existing customers as part of the Infineon product
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Continuity of document content
The fact that Infineon offers the following product as part of the Infineon product
portfolio does not lead to any changes to this document. Future revisions will occur
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Continuity of ordering part numbers
Infineon continues to support existing part numbers. Please continue to use the
ordering part numbers listed in the datasheet for ordering.
www.infineon.com
CY39C326
6 MHz Synchronous Rectification
Buck-Boost DC/DC Converter IC
Description
The CY39C326 is a high efficiency, low noise synchronous, Buck-boost DC/DC converter designed for powering the radio
frequency power amplifiers (RFPA) in 3G/GSM mobile handsets and other mobile applications.
Features
High efficiency
: Up to 93 %
Input voltage range
: 2.5 V to 5.5 V
Adjustable output voltage range
: 0.8 V to 5.0 V
Maximum output current
: 1200 mA (VIN = 5.0 V to 5.5 V, at Vo=5.0 V)
(Buck, PWM mode)
: 1200 mA (VIN = 3.6 V to 5.5 V, at Vo=3.6 V)
: 1200 mA (VIN = 3.3 V to 5.5 V, at Vo=3.3 V)
(Boost, PWM mode)
: 900 mA (VIN = 3.7 V to 5.0 V, at Vo=5.0 V)
: 700 mA (VIN = 2.5 V to 3.6 V, at Vo=3.6 V)
: 800 mA (VIN = 2.5 V to 3.3 V, at Vo=3.3 V)
(Buck, Power save mode,
: 600 mA (VIN = 5.0 V to 5.5 V, at Vo=5.0 V)
ILIMSEL=H)
: 600 mA (VIN = 3.6 V to 5.5 V, at Vo=3.6 V)
: 600 mA (VIN = 3.3 V to 5.5 V, at Vo=3.3 V)
(Boost, Power save mode,
: 500 mA (VIN = 3.7 V to 5.0 V, at Vo=5.0 V)
ILIMSEL=H)
: 400 mA (VIN = 2.5 V to 3.6 V, at Vo=3.6 V)
: 500 mA (VIN = 2.5 V to 3.3 V, at Vo=3.3 V)
Quiescent current : 50 µA
6 MHz PWM operation allows 0.5 µH small form inductor
Automatic Transition between Buck mode and boost mode
Power save Mode for improved efficiency at light load current
Selectable output voltage with external resistor
Built-in Over temperature protection circuit
Built-in Under voltage lockout protection circuit
Package: WL-CSP (20 pin 0.4 mm-ball-pitch 2.15 × 1.94 mm)
Applications
Products that use 1-cell lithium batteries for the power supply
RF power amplifier
Cell-phone
RF-PC card and PDA
Note: This product supports the web-based design simulation tool, Easy DesignSim. It can easily select external components and
can display useful information. Please access from http://cypress.transim.com/login.aspx
Cypress Semiconductor Corporation
Document Number: 002-08348 Rev. *C
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised April 17, 2019
CY39C326
Contents
Description .............................................................................................................................................................. 1
Features .................................................................................................................................................................. 1
Applications ............................................................................................................................................................ 1
1.
Pin Assignments .......................................................................................................................................... 3
2.
Pin Descriptions .......................................................................................................................................... 3
3.
Block Diagram ............................................................................................................................................. 4
4.
Function ....................................................................................................................................................... 4
5.
Absolute Maximum Ratings......................................................................................................................... 6
6.
Recommended Operating Conditions ......................................................................................................... 6
7.
Electrical Characteristics ............................................................................................................................. 8
8.
Typical Applications Circuit (RF Power Amplifier) ....................................................................................... 9
9.
Application Notes ...................................................................................................................................... 10
10.
Inductor Selection ...................................................................................................................................... 12
11.
Input Capacitor Selection .......................................................................................................................... 12
12.
Output Capacitor Selection ....................................................................................................................... 12
13.
Thermal Information .................................................................................................................................. 12
14.
Notes on Board Layout .............................................................................................................................. 13
15.
Example of Standard Operation Characteristics ....................................................................................... 14
16.
Usage Precaution ...................................................................................................................................... 17
17.
Notes on Mounting .................................................................................................................................... 17
18.
Ordering Information ................................................................................................................................. 18
19.
RoHS Compliance Information .................................................................................................................. 18
20.
Package Dimensions ................................................................................................................................. 19
21.
Major Changes .......................................................................................................................................... 20
Document History ................................................................................................................................................. 21
Sales, Solutions, and Legal Information ............................................................................................................... 22
Document Number: 002-08348 Rev. *C
Page 2 of 22
CY39C326
1. Pin Assignments
TOP VIEW
4
EN
ILIMSEL
VCC
XPS
VSEL VSELSW
GND
3
GND
GND
FB
2
VDD
SWOUT DGND
SWIN
VOUT
VDD
SWOUT DGND
SWIN
VOUT
D
E
1
A
B
C
(U4D020)
2. Pin Descriptions
Pin No.
Pin Name
I/O
Description
A4
EN
I
IC Enable input pin (H: Enable, L: Shutdown)
E3
FB
I
Voltage feedback pin
C3, D3, E4
GND
-
Control / Logic ground pins
B4
ILIMSEL
I
Inductor peak current limit pin
B1, B2
SWOUT
I
Connection pins for Inductor
D1, D2
SWIN
I
Connection pins for Inductor
C1, C2
DGND
-
Power ground pins
C4
VSEL
I
Output voltage select pin (H: Using R3 L: No using R3)
D4
VSELSW
-
Connection pin for output voltage setting resistor R3
A1, A2
VDD
I
Electric power input pin for DCDC converter output voltage
A3
VCC
I
Electric power input pin for IC control block
B3
XPS
I
Power save mode pin (H: PWM mode, L: Power save mode)
E1, E2
VOUT
O
Buck-boost converter output pins
Document Number: 002-08348 Rev. *C
Page 3 of 22
CY39C326
3. Block Diagram
L1
SWOUT
VDD
CIN
SWIN
SW1
VOUT
SW5
COUT
SW4
Current
Sensor
SW2
SW3
Vbatt
DGND
VCC
Gate Controller
EN
Device
Control
ILIMSEL
XPS
BGR
UVLO
AGND
Err
Amp
R1
FB
R3
Over Temp
Protection
R2
VSELSW
Oscillator
VSEL
4. Function
(1) Gate Controller
It is controlled the synchronous rectification operation of built-in 2-P-ch MOS FETs and 2-N-ch MOS FETs according to frequency
(6 MHz) set with a oscillator at the normal operation.
(2) Error Amp & phase compensation circuit
This compares the feedback voltage and the reference voltage (VREF). This IC contains the phase compensation circuit which
optimizes the IC operation. Therefore, it is unnecessary to consideration of the phase compensation circuit, and external parts for
the phase compensation.
(3) Band gap reference circuit
A high accuracy reference voltage is generated with BGR (band gap reference) circuit.
(4) Oscillator
The internal oscillator output a 6 MHz clock signal to set a switching frequency.
(5) Over temperature protection circuit
The over temperature protection circuit is built-in as a protection circuit. When junction temperature reaches +125 °C, the over
temperature protection circuit turns off all N-ch MOS FETs and P-ch MOS FETs. Also, when the junction temperature falls to
+110 °C, this IC operates normally.
(6) Inductor peak current limit circuit (Current Sensor + Device Control)
The inductor peak current limit circuit detects the current (ILX) which flows from built-in P-ch MOS FET connected to VDD into an
external inductor and limits the inductor peak current (IPK).
Document Number: 002-08348 Rev. *C
Page 4 of 22
CY39C326
(7) Power save mode operation
Power save mode is used to improve efficiency at the light load. By setting the XPS pin to "L" level, power save mode is set and
the operation is performed in PWM mode or PFM mode depending on the load current. At this time, if the load current is low, this
IC operates with PFM (PulseFrequency Modulation). It should be used above V OUT = 0.8 V. If the output voltage becomes lower
than the setting value at the light load, switching is performed several times and the output voltage rises. If the output voltage
reaches the setting value, it changes to the stop state, all of the four FETs are turned off, and the switching loss and the dissipation
power for the circuit are suppressed.
Consumption current in stop state at the power save mode becomes about 50 μA.
Function Table
Mode
PWM mode
Power save mode
XPS
H
L
ILIMSEL
Input Voltage Range [V]
Output Voltage Range [V]
Min
Max
Min
Max
2.5
5.5
0.8
5.0
Inductor Peak Current
Limit (IPK) [A]
L
H
3.1
1.3
L
0.49
Note: Input of (XPS, ILIMSEL = H, H) is prohibited.
(8) EN pin
When the EN pin is set to "H" level, the device operation is enabled. When the EN pin is set to GND, the device is switched to
shutdown mode.
When the EN pin is set to "L" level, the device is switched to shutdown mode.
In shutdown mode, the regulator stops switching, all FET switches are turned off, and the load is disconnected from the input.
(9) VSEL pin
CY39C326 has a function to change the output voltage with the VSEL pin and additional resistance.
For details of the output voltage settings, see the section 2. of "Programming the Output Voltage" in 9. Application .
(10) Buck-Boost operations
CY39C326 operates in Buck or Boost mode by monitoring the VCC/VOUT voltage with a newly developed PWM controller.
The transition between buck and boost mode is smooth and the efficiency is high.
During Buck mode (VCC > VOUT), SW1 and SW2 perform switching while SW3 is fixed to OFF and SW4 and 5 are fixed to ON.
During Boost mode (VCC < VOUT), SW3, SW4 and SW5 perform switching while SW1 is fixed to ON and SW2 is fixed to OFF.
The voltage values of VCC and VDD at the switching between buck and boost vary depending on the load current, the
environmental temperature and the process variations.
(11) Startup circuit
CY39C326 has the soft-start function to prevent rush current upon turning on of the power.
The startup time is approximately 100 µs.
Document Number: 002-08348 Rev. *C
Page 5 of 22
CY39C326
5. Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Min
Max
Unit
Power supply voltage
VMAX
VDD, VCC
-0.3
+7.0
Signal input voltage
VINMAX
EN, XPS, VSEL, ILIMSEL
-0.3
VDD + 0.3
V
-
1080
mW
-65
+150
°C
-2000
+2000
V
Power dissipation
PD
Storage temperature
Ta ≤ +25°C
TSTG
ESD Voltage
Maximum junction temperature
-
V
VESDH
Human Body Model
(100 pF, 1.5 kΩ)
VESDM
Machine Model (200 pF, 0 Ω)
-200
+200
V
VESDC
Charged device model
-1000
+1000
V
-
+95
°C
Tj-MAX
-
WARNING:
Semiconductor devices may be permanently damaged by application of stress (including, without limitation, voltage, current or
temperature) in excess of absolute maximum ratings. Do not exceed any of these ratings.
6. Recommended Operating Conditions
Parameter
Power supply voltage
Signal input voltage
Symbol
VDD
VDD, VCC
VIDD
EN, XPS, VSEL, ILIMSEL
2.5(*1)
3.7
5.5(*1)
Unit
V
-
VDD
V
-
-
1200
mA
Io (Max2)
VIN = 5.5 V, Vo = 4.4 V, XPS = H, ILIMSEL = L
-
-
1200
mA
VIN = 5.5 V, Vo = 3.6 V, XPS = H, ILIMSEL = L
-
-
1200
mA
VIN = 4.2 V, Vo = 3.6 V, XPS = H, ILIMSEL = L
-
-
1200
mA
VIN = 5.5 V, Vo = 3.3 V, XPS = H, ILIMSEL = L
-
-
1200
mA
VIN = 3.7 V, Vo = 3.3 V, XPS = H, ILIMSEL = L
-
-
1200
mA
VIN = 5.5 V, Vo = 2.0 V, XPS = H, ILIMSEL = L
-
-
1200
mA
VIN = 3.7 V, Vo = 2.0 V, XPS = H, ILIMSEL = L
-
-
1200
mA
VIN = 2.5 V, Vo =2.0 V, XPS = H, ILIMSEL = L
-
-
1200
mA
VIN = 5.5 V, Vo = 1.2 V, XPS = H, ILIMSEL = L
-
-
700
mA
VIN = 3.7 V, Vo = 1.2 V, XPS = H, ILIMSEL = L
-
-
600
mA
VIN = 2.5 V, Vo = 1.2 V, XPS = H, ILIMSEL = L
-
-
600
mA
VIN = 5.5 V, Vo = 0.8 V, XPS = H, ILIMSEL = L
-
-
600
mA
VIN = 3.7 V, Vo = 0.8 V, XPS = H, ILIMSEL = L
-
-
500
mA
VIN = 2.5 V, Vo = 0.8 V, XPS = H, ILIMSEL = L
-
-
250
mA
Io (Max8)
VIN = 2.5 V, Vo = 3.3 V, XPS = H, ILIMSEL = L
-
-
800
mA
Io (Max9)
VIN = 2.5 V, Vo = 3.6 V, XPS = H, ILIMSEL = L
-
-
700
mA
VIN = 3.7 V, Vo = 4.4 V, XPS = H, ILIMSEL = L
-
-
1000
mA
VIN = 2.5 V, Vo = 4.4 V, XPS = H, ILIMSEL = L
-
-
700
mA
VIN = 3.7 V, Vo = 5 V, XPS = H, ILIMSEL = L
-
-
900
mA
VIN = 2.5 V, Vo = 5 V, XPS = H, ILIMSEL = L
-
-
600
mA
Io (Max5)
Io (Max7)
PWM mode
Max
0.0
Io (Max6)
Output current (Boost)
Value
Typ
VIN = 5.5 V, Vo = 5.0 V, XPS = H, ILIMSEL = L
Io (Max4)
PWM mode
Min
Io (Max1)
Io (Max3)
Output current (Buck)
Condition
Io (Max10)
Io (Max11)
Document Number: 002-08348 Rev. *C
Page 6 of 22
CY39C326
Value
Parameter
Symbol
Typ
Max
Unit
VIN = 5.5 V, Vo = 5.0 V, XPS = L, ILIMSEL = H
-
-
600
mA
Io (Max13)
VIN = 5.5 V, Vo = 4.4 V, XPS = L, ILIMSEL = H
-
-
600
mA
VIN = 5.5 V, Vo = 3.6 V, XPS = L, ILIMSEL = H
-
-
600
mA
VIN = 4.2 V, Vo = 3.6 V, XPS = L, ILIMSEL = H
-
-
600
mA
VIN = 5.5 V, Vo = 3.3 V, XPS = L, ILIMSEL = H
-
-
600
mA
VIN = 3.7 V, Vo = 3.3 V, XPS = L, ILIMSEL = H
-
-
600
mA
VIN = 5.5 V, Vo = 2.0 V, XPS = L, ILIMSEL = H
-
-
600
mA
VIN = 3.7 V, Vo = 2.0 V, XPS = L, ILIMSEL = H
-
-
500
mA
VIN = 2.5 V, Vo = 2.0 V, XPS = L, ILIMSEL = H
-
-
500
mA
VIN = 5.5 V, Vo = 1.2 V, XPS = L, ILIMSEL = H
-
-
400
mA
VIN = 3.7 V, Vo = 1.2 V, XPS = L, ILIMSEL = H
-
-
300
mA
VIN = 2.5 V, Vo = 1.2 V, XPS = L, ILIMSEL = H
-
-
300
mA
VIN = 5.5 V, Vo = 0.8 V, XPS = L, ILIMSEL = H
-
-
400
mA
VIN = 3.7 V, Vo = 0.8 V, XPS = L, ILIMSEL = H
-
-
200
mA
Io (Max15)
Output current (Buck)
Io (Max16)
ILIMSEL=H
Io (Max17)
Io (Max18)
VIN = 2.5 V, Vo = 0.8 V, XPS = L, ILIMSEL = H
-
-
200
mA
Io (Max19)
VIN = 2.5 V, Vo = 3.3 V, XPS = L, ILIMSEL = H
-
-
500
mA
Io (Max20)
VIN = 2.5 V, Vo = 3.6 V, XPS = L, ILIMSEL = H
-
-
400
mA
VIN = 3.7 V, Vo = 4.4 V, XPS = L, ILIMSEL = H
-
-
600
mA
VIN = 2.5 V, Vo = 4.4 V, XPS = L, ILIMSEL = H
-
-
350
mA
VIN = 3.7 V, Vo = 5 V, XPS = L, ILIMSEL = H
-
-
500
mA
VIN = 2.5 V, Vo = 5 V, XPS = L, ILIMSEL = H
-
-
300
mA
Io (Max23)
VIN = 3.7 V, Vo = 3.3 V, XPS = L, ILIMSEL = L
-
-
160
mA
Io (Max24)
VIN = 2.5 V, Vo = 5 V, XPS = L, ILIMSEL = L
-
-
60
mA
Output current (Boost)
Power save mode,
Min
Io (Max12)
Io (Max14)
Power save mode,
Condition
Io (Max21)
ILIMSEL=H
Io (Max22)
Output current (Buck)
Power save mode,
ILIMSEL=L
Output current (Boost)
Power save mode,
ILIMSEL=L
Operating Ambient
temperature
Ta
-
-40
-
+85
°C
Junction temperature
range
Tj
-
-40
-
+95
°C
Inductor value
L
-
-
0.5
-
µH
R1
-
-
620
-
kΩ
Feedback resistor value
*1: Depending on the setting condition. See "■ Function Table" in "4. Function (7) Power save mode operation".
WARNING:
1. The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of
the device's electrical characteristics are warranted when the device is operated under these conditions.
2. Any use of semiconductor devices will be under their recommended operating condition.
3. Operation under any conditions other than these conditions may adversely affect reliability of device and could result in device
failure.
4. No warranty is made with respect to any use, operating conditions or combinations not represented on this data sheet. If you
are considering application under any conditions other than listed herein, please contact sales representatives beforehand.
Document Number: 002-08348 Rev. *C
Page 7 of 22
CY39C326
7. Electrical Characteristics
The specifications apply under the recommended operating condition.
Parameter
Output voltage range
Symbol
Condition
VO
Feedback voltage
VFB
Line Regulation
VLINE
IO = 0 to 800 mA
Load Regulation
VLOAD
IO = 0 to 800 mA
Value
Unit
Min
Typ
Max
-
0.8
-
5.0
V
-
490
500
510
mV
-
0.2
-
%
-
0.3
-
%
XPS = H, ILIMSEL = L
2.50
3.10
3.75
A
XPS = L, ILIMSEL = H
1.05
1.30
1.60
A
XPS = L, ILIMSEL = L
0.36
0.49
0.60
A
5.2
5.8
6.4
MHz
Inductor peak current limit
IPK
Oscillation frequency
fOSC
Shutdown current
ISD
EN = L
-
-
2
μA
IQ
EN = H, XPS = L,
VIN = 3.7 V, VO = 3.3 V,
IO = 0 mA
-
50
-
μA
-
63.5
84
-
124
175
-
82
116
-
123
164
-
51
72
-
135(*1)
-
°C
Quiescent current
-
SW1
SW2
SW FET ON
resistance
SW3
Rdson
VDD = 3.7 V, VO = 3.3 V, Ta = +25°C
SW4
SW5
Over temperature protection
UVLO
Threshold voltage
Signal input threshold voltage
Signal input current
TOTPH
-
TOTPL
-
-
110(*1)
-
°C
VUVLOH
-
1.9
2.0
2.1
V
-
VUVLOL
1.8
1.9
2.0
V
VIL
EN, XPS, VSEL, ILIMSEL
0.0
-
0.25
V
VIH
EN, XPS, VSEL, ILIMSEL
1.5
-
VDD
V
ICTL
EN, XPS, VSEL, ILIMSEL
-
-
0.1
μA
*1: This parameter is not be specified. This should be used as a reference to support designing the circuits.
Document Number: 002-08348 Rev. *C
mΩ
Page 8 of 22
CY39C326
8. Typical Applications Circuit (RF Power Amplifier)
0.5µH
VBATT
CIN
SWOUT
SWIN
VO
10µF
VDD
VOUT
COUT
VCC
VSEL
AGND
2.2µF
FB
EN
VSELSW
Pin
DGND
PA
Pout
MB39C326
DAC
Document Number: 002-08348 Rev. *C
Page 9 of 22
CY39C326
9. Application Notes
Programming the Output Voltage
Output voltage is calculated using the equation (1) below.
Use R1 resistor value of 620 kΩ. Built-in phase compensation circuit is generated according to this resistor value.
1.
Not using a selectable voltage option
VO = VFB ×
R1 + R2
R2
(VFB = 500 mV)
L1
SWOUT
VBATT
VDD
CIN
SWIN
VO
VOUT
VCC
R1
EN
FB
COU T
R2
XPS
VSELSW
VSEL
ILIMSEL
DGND
GND
2.
Using a selectable voltage option
When VSEL = L
VO = VFB ×
R1 + R2
R2
When VSEL = H
VO = VFB ×
R1 + (R2//R3)
R2//R3
L1
SWOUT
SWIN
VBATT
CIN
VDD
VCC
EN
R1
VSEL
COU T
FB
R3
XPS
L or H
VO
VOUT
R2
VSELSW
ILIMSEL
GND
Document Number: 002-08348 Rev. *C
DGND
Page 10 of 22
CY39C326
3.
When the output variable is dynamically performed
VO = -
R1
R3
× VDAC + VFB ×
(
R1
R3
+
R1
+1)
R2
(VFB = 500 mV)
SWOUT
SWIN
VBATT
VDD
VCC
CIN
VO
VOUT
R1
FB
EN
XPS
VSELSW
VSEL
COU T
R3
R2
ILIMSEL
DGND
GND
DAC
Relationship between DAC and output when setting to R1 = 620 kΩ, R2 = 110 kΩ and R3 = 330 kΩ
VO - DAC
4.50
4.00
3.50
VO (V)
3.00
2.50
2.00
1.50
1.00
0.50
0.00
0.000
0.500
1.000
1.500
2.000
2.500
DAC voltage (V)
Document Number: 002-08348 Rev. *C
Page 11 of 22
CY39C326
10. Inductor Selection
The recommended inductor is 0.5 μH (0.47 μH).
To acquire a high-efficiency, select an inductor with low ESR.
Confirm in use conditions that the coil current does not exceed the rated saturation current.
It is recommended that the switch current limit value is considered.
Note that the permissible current value might be low about some products with high ESR because of the device temperature
increasing.
The following table shows the recommended inductor.
Vendor
Part #
Size
DCR [Ω]
L [mm]
W [mm]
H [mm]
(Max)
Isat [A]
(-30%)
Coilcraft
XPL2010-501ML
1.9
2.0
1.0
0.045
2.64
ALPS
GLCHKR4701A
2.0
1.6
1.0
0.035
3.6
Coilcraft : Coilcraft, Inc.
ALPS : Alps Green Devices Co., Ltd
11. Input Capacitor Selection
It is recommended to place a low ESR ceramic bypass capacitor at least 10 μF close to VDD and GND because the input capacitor
is the power-supply voltage.
The execution capacity of some ceramic capacitors greatly decreases when adding bias.
Select a product by checking the part characteristics of manufacturer because small size parts or low voltage rating parts tend to
have that characteristic.
12. Output Capacitor Selection
The recommended standard capacity of the output capacitor is 2.2 μF in PWM mode.
When using in power save mode, the capacitor with larger capacity (around 22 μF) is recommended to reduce the ripple voltage at
PFM operation.
To suppress the decrease of output voltage during the load change, adjust with a larger capacitor.
Larger capacitors and low ESR capacitors is useful to reduce the ripple.
13. Thermal Information
Power dissipation is 1080 mW Max.
Thermal resistance(θja) is 65°C /W (JEDEC). This value can be used to calculate the chip temperature.
Thermal resistance is calculated based on the usage of JEDEC standard boards. It is recommended to consider for the thermal
design that the value may vary depending on the area of the board and the positions of the vias.
See "Power dissipation vs. Operation ambient temperature" in "15. Example of Standard Operation ".
Document Number: 002-08348 Rev. *C
Page 12 of 22
CY39C326
14. Notes on Board Layout
A suitable board layout is required for stable operations of this IC.
Place the peripheral component, input capacitance CIN and the output capacitance COUT close to this IC as much as possible, and
connect them with the shortest routes.
The routes with large current, in particular, the routes with variable current must be placed on the front surface with the shortest
routes.
Separate DGND from GND and connect GND at one point close to C OUT.
Provide the ground plane as much as possible on the IC mounted face. It is useful for heat dissipation.
R
FB
C
VCC
R
R
VDD
Vout
C
C
C
C
DGND
L
Document Number: 002-08348 Rev. *C
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CY39C326
15. Example of Standard Operation Characteristics
Efficiency vs. Load Current
(VIN = 3.7V, Power save mode, ILIMSEL=H)
Efficiency [%]
Load Current (A)
Load Current (A)
Efficiency vs. Load Current (VO = 3.3V, PWM mode)
Efficiency vs. Load Current
(VO = 3.3V, Power save mode, ILIMSEL=H)
100%
100%
90%
90%
80%
80%
70%
70%
60%
Efficiency [%]
Efficiency [%]
Efficiency [%]
Efficiency vs. Load Current (VIN = 3.7V, PWM mode)
XPS=H
ILIMSEL=L
50%
40%
Input voltage =
30%
5.5V
20%
0%
0.001
0.010
0.100
XPS=L
ILIMSEL=H
40%
Input voltage =
30%
5.5V
3.7V
2.5V
10%
0%
0.001
1.000
0.010
0.100
1.000
Load Current (A)
Load Current (A)
Efficiency vs. Load Current (VO = 5.0V, PWM mode)
Efficiency vs. Load Current
(VO = 5.0V, Power save mode, ILIMSEL=H)
100%
100%
90%
90%
80%
80%
70%
70%
60%
XPS=H
ILIMSEL=L
50%
40%
Input voltage =
30%
5.5V
20%
3.7V
2.5V
10%
0%
0.001
Efficiency [%]
Efficiency [%]
50%
20%
3.7V
2.5V
10%
60%
60%
50%
40%
XPS=L
ILIMSEL=H
30%
Input voltage =
5.5V
3.7V
2.5V
20%
10%
0.010
0.100
Load Current (A)
Document Number: 002-08348 Rev. *C
1.000
0%
0.001
0.010
0.100
1.000
Load Current (A)
Page 14 of 22
CY39C326
Maximum Output Current vs. Input Voltage
(Power save mode, ILIMSEL=H)
Maximum Output Current (A)
Maximum Output Current (A)
Maximum Output Current vs. Input Voltage
(PWM mode)
Input Voltage [V]
Input Voltage [V]
Load sudden change waveform
VIN=3.7V
IO=0
0.4A
COUT=2.2μF
XPS=H,
ILIMSEL=L
VO, 100mV/div, AC
1
Output Current, 200mA/div
100μs/div
Startup (PWM mode)
EN, 2V/div
Startup (Power save mode, ILIMSEL=H)
EN, 2V/div
VIN=3.7V, VO=3.3V,
IO=0A
XPS=H
ILIMSEL=L
20μs/div
VO, 1V/div
20μs/div
Document Number: 002-08348 Rev. *C
VIN=3.7V, VO=3.3V,
IO=0A
XPS=L
ILIMSEL=H
20μs/div
VO, 1V/div
20μs/div
Page 15 of 22
CY39C326
VO step response (Rise)
VO step response (Fall)
VIN=3.7V,
VO=4.0V→0.8V
VO, 1V/div
Rload=11Ω
XPS=H
ILIMSEL=L
10μs/div
VIN=3.7V,
VO=0.8V→4.0V
VO, 1V/div
Rload=11Ω
XPS=H
ILIMSEL=L
10μs/div
DAC, 2V/div
DAC, 2V/div
10μs/div
10μs/div
Pd [W]
Power consumption vs.
Operating ambient temperature
Temperature [°C]
Document Number: 002-08348 Rev. *C
Page 16 of 22
CY39C326
16. Usage Precaution
Do not configure the IC over the maximum ratings.
If the IC is used over the maximum ratings, the LSI may be permanently damaged.
It is preferable for the device to be normally operated within the recommended usage conditions. Usage outside of these conditions
can have a bad effect on the reliability of the LSI.
Use the devices within recommended operating conditions.
The recommended operating conditions are the recommended values that guarantee the normal operations of LSI.
The electrical ratings are guaranteed when the device is used within the recommended operating conditions and under the
conditions stated for each item.
Printed circuit board ground lines should be set up with consideration for common impedance.
Take appropriate measures against static electricity.
Containers for semiconductor materials should have anti-static protection or be made of conductive material.
After mounting, printed circuit boards should be stored and shipped in conductive bags or containers.
Work platforms, tools, and instruments should be properly grounded.
Working personnel should be grounded with resistance of 250 kΩ to 1 MΩ in series between body and ground.
Do not apply negative voltages.
The use of negative voltages below -0.3 V may cause the parasitic transistor to be activated on LSI lines, which can cause
malfunctions.
17. Notes on Mounting
In general, the underfill material and sealing method affect the reliability of mounting.
Cypress does not evaluate the mounting using the underfill material.
It is advisable for each customer to evaluate the mounting enough.
WL-CSP has a surface boundary between silicon and resin at the side of the package.
Resin may be pulled by the board because of the underfill material and its shape and the state, and stress may occur at the
surface boundary.
The result may vary depending on the board and the underfill material used by each customer; therefore, it is advisable for each
customer to evaluate the mounting enough in order to apply to the products.
When using the underfill materials, be sure to apply the underfill to the silicon side surface as shown below (fillet formation).
Ensuring wettability of
the silicon
Silicon
Underfill fillet
Resin
Underfill
Document Number: 002-08348 Rev. *C
Page 17 of 22
CY39C326
18. Ordering Information
Part Number
CY39C326PW
Package
20-pin plastic WL-CSP
(U4D020)
Remarks
–
19. RoHS Compliance Information
The LSI products of Cypress with "E1" are compliant with RoHS Directive, and has observed the standard of lead, cadmium,
mercury, Hexavalent chromium, polybrominated biphenyls (PBB), and polybrominated diphenyl ethers (PBDE). A product whose
part number has trailing characters "E1" is RoHS compliant.
Document Number: 002-08348 Rev. *C
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CY39C326
20. Package Dimensions
Package Code: U4D020
002-16171 Rev. **
Document Number: 002-08348 Rev. *C
Page 19 of 22
CY39C326
21. Major Changes
Spansion Publication Number: DS405-00001
Page
Section
Change Results
Revision 1.0
-
-
Initial release
NOTE: Please see “Document History” about later revised information.
Document Number: 002-08348 Rev. *C
Page 20 of 22
CY39C326
Document History
Document Title: CY39C326 6 MHz Synchronous Rectification Buck-Boost DC/DC Converter IC
Document Number: 002-08348
Revision
ECN
Orig. of
Change
Submission
Date
**
TAOA
01/31/2014
*A
5131396
TAOA
02/10/2016 Updated to Cypress template
Description of Change
Migrated to Cypress and assigned document number 002-08348.
No change to document contents or format.
Updated Pin Assignments:
Added the package name, U4D020
Updated Ordering Information:
Change the package name from WLP-20P-M01 to U4D020
*B
5732493
HIXT
05/11/2017
Deleted “EV Board Ordering Information”
Deleted “Marking”
Deleted “Labeling Sample”
Deleted “MB39C326PW Recommended Conditions of Moisture
Sensitivity Level”
Updated Package Dimensions: Updated to Cypress format
*C
6532697
ATTS
Document Number: 002-08348 Rev. *C
04/17/2019 Changed part number to CY39C326
Page 21 of 22
CY39C326
Sales, Solutions, and Legal Information
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To find the office closest to you, visit us at Cypress Locations.
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Arm and Cortex are registered trademarks of Arm Limited (or its subsidiaries) in the US and/or elsewhere.
© Cypress Semiconductor Corporation, 2014-2019. This document is the property of Cypress Semiconductor Corporation and its subsidiaries (“Cypress”). This document, including any software
or firmware included or referenced in this document (“Software”), is owned by Cypress under the intellectual property laws and treaties of the United States and other countries worldwide.
Cypress reserves all rights under such laws and treaties and does not, except as specifically stated in this paragraph, grant any license under its patents, copyrights, trademarks, or other
intellectual property rights. If the Software is not accompanied by a license agreement and you do not otherwise have a written agreement with Cypress governing the use of the Software, then
Cypress hereby grants you a personal, non-exclusive, nontransferable license (without the right to sublicense) (1) under its copyright rights in the Software (a) for Software provided in source code
form, to modify and reproduce the Software solely for use with Cypress hardware products, only internally within your organization, and (b) to distribute the Software in binary code form externally
to end users (either directly or indirectly through resellers and distributors), solely for use on Cypress hardware product units, and (2) under those claims of Cypress’s patents that are infringed by
the Software (as provided by Cypress, unmodified) to make, use, distribute, and import the Software solely for use with Cypress hardware products. Any other use, reproduction, modification,
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TO THE EXTENT PERMITTED BY APPLICABLE LAW, CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS DOCUMENT OR ANY
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SYSTEMS CREATED USING CYPRESS PRODUCTS, WILL BE FREE FROM CORRUPTION, ATTACK, VIRUSES, INTERFERENCE, HACKING, DATA LOSS OR THEFT, OR OTHER
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information and any resulting product. “High-Risk Device” means any device or system whose failure could cause personal injury, death, or property damage. Examples of High-Risk Devices are
weapons, nuclear installations, surgical implants, and other medical devices. “Critical Component” means any component of a High-Risk Device whose failure to perform can be reasonably
expected to cause, directly or indirectly, the failure of the High-Risk Device, or to affect its safety or effectiveness. Cypress is not liable, in whole or in part, and you shall and hereby do release
Cypress from any claim, damage, or other liability arising from any use of a Cypress product as a Critical Component in a High-Risk Device. You shall indemnify and hold Cypress, its directors,
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personal injury or death, or property damage arising from any use of a Cypress product as a Critical Component in a High-Risk Device. Cypress products are not intended or authorized for use as
a Critical Component in any High-Risk Device except to the limited extent that (i) Cypress’s published data sheet for the product explicitly states Cypress has qualified the product for use in a
specific High-Risk Device, or (ii) Cypress has given you advance written authorization to use the product as a Critical Component in the specific High-Risk Device and you have signed a separate
indemnification agreement.
Cypress, the Cypress logo, Spansion, the Spansion logo, and combinations thereof, WICED, PSoC, CapSense, EZ-USB, F-RAM, and Traveo are trademarks or registered trademarks of Cypress
in the United States and other countries. For a more complete list of Cypress trademarks, visit cypress.com. Other names and brands may be claimed as property of their respective owners.
Document Number: 002-08348 Rev. *C
April 17, 2019
Page 22 of 22