CY621282BN MoBL® Automotive
1-Mbit (128 K × 8) Static RAM
1-Mbit (128 K × 8) Static RAM
Features
Functional Description
■
Temperature Ranges
❐ Automotive-E: –40 °C to 125 °C
■
4.5 V to 5.5 V operation
■
Complementary metal oxide semiconductor (CMOS) for
optimum speed/power
■
Low active power
137.5 mW (max.) (25 mA)
■
Low standby power
137.5 W (max.) (25 A)
■
Automatic power-down when deselected
■
TTL-compatible inputs and outputs
■
Easy memory expansion with CE1, CE2, and OE options
■
Available in Pb-free 32-pin (450 mil-wide) small outline
integrated circuit (SOIC) package
The CY621282BN is a high-performance CMOS static RAM
organized as 128K words by 8 bits. Easy memory expansion is
provided by an active LOW Chip Enable (CE1), an active HIGH
Chip Enable (CE2), and active LOW Output Enable (OE). This
device has an automatic power-down feature that reduces power
consumption by more than 75% when deselected.
Writing to the device is accomplished by taking Chip Enable One
(CE1) and Write Enable (WE) inputs LOW and Chip Enable Two
(CE2) input HIGH. Data on the eight I/O pins (I/O0 through I/O7)
is then written into the location specified on the address pins (A0
through A16).
Reading from the device is accomplished by taking Chip Enable
One (CE1) and Output Enable (OE) LOW while forcing Write
Enable (WE) and Chip Enable Two (CE2) HIGH. Under these
conditions, the contents of the memory location specified by the
address pins will appear on the I/O pins.
The eight input/output pins (I/O0 through I/O7) are placed in a
high-impedance state when the device is deselected (CE1 HIGH
or CE2 LOW), the outputs are disabled (OE HIGH), or during a
write operation (CE1 LOW, CE2 HIGH, and WE LOW).
For a complete list of related resources, click here.
Logic Block Diagram
I/O 0
INPUT BUFFER
I/O 1
128K x 8
ARRAY
I/O 3
I/O 4
I/O 5
COLUMN
DECODER
CE1
CE2
WE
I/O 6
POWER
DOWN
A8
A9
A 10
A 11
A 12
A 13
A 14
A 15
I/O 7
OE
Cypress Semiconductor Corporation
Document Number: 001-65526 Rev. *D
I/O 2
SENSE AMPS
ROW DECODER
A0
A1
A2
A3
A4
A5
A6
A7
A8
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised April 15, 2015
CY621282BN MoBL® Automotive
Contents
Product Portfolio .............................................................. 3
Pin Configuration ............................................................. 3
Pin Definitions .................................................................. 3
Maximum Ratings ............................................................. 4
Operating Range ............................................................... 4
Electrical Characteristics ................................................. 4
Capacitance ...................................................................... 5
Thermal Resistance .......................................................... 5
AC Test Loads and Waveforms ....................................... 5
Data Retention Waveform ................................................ 6
Data Retention Characteristics ....................................... 6
Switching Characteristics ................................................ 7
Switching Waveforms ...................................................... 8
Truth Table ...................................................................... 10
Document Number: 001-65526 Rev. *D
Ordering Information ...................................................... 10
Ordering Code Definitions ......................................... 10
Package Diagrams .......................................................... 11
Acronyms ........................................................................ 12
Document Conventions ................................................. 12
Units of Measure ....................................................... 12
Document History Page ................................................. 13
Sales, Solutions, and Legal Information ...................... 14
Worldwide Sales and Design Support ....................... 14
Products .................................................................... 14
PSoC® Solutions ...................................................... 14
Cypress Developer Community ................................. 14
Technical Support ..................................................... 14
Page 2 of 14
CY621282BN MoBL® Automotive
Product Portfolio
Product
CY621282BN
Automotive-E
Power Dissipation
VCC Range (V)
Speed (ns) Operating, ICC (mA)
Min
Typ [1]
Max
4.5
5.0
5.5
70
Standby, ISB2 (A)
Typ [1]
Max
Typ [1]
Max
6
25
2.5
25
Pin Configuration
Figure 1. 32-pin SOIC (Top View)
Top View
SOIC
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GN
G
gnc
g
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
Pin Definitions
I/O Type
Description
Input
A0–A16. Address inputs
Input/output
I/O0–I/O7. Data lines. Used as input or output lines depending on operation.
Input/control
WE. Write Enable, Active LOW. When selected LOW, a WRITE is conducted. When selected HIGH, a READ is
conducted.
Input/control
CE1. Chip Enable 1, Active LOW.
Input/control
CE2. Chip Enable 2, Active HIGH.
Input/control
OE. Output Enable, Active LOW. Controls the direction of the I/O pins. When LOW, the I/O pins behave as outputs.
When deasserted HIGH, I/O pins are tri-stated, and act as input data pins.
Ground
GND. Ground for the device.
Power supply
VCC. Power supply for the device.
Note
1. Typical values are included for reference only and are not tested or guaranteed. Typical values are measured at VCC = 5.0 V, TA = 25 °C.
Document Number: 001-65526 Rev. *D
Page 3 of 14
CY621282BN MoBL® Automotive
DC input voltage [2, 3] .......................... –0.5 V to VCC + 0.5 V
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied .......................................... –55 °C to +125 °C
Supply voltage on
VCC to relative GND[2] .................................–0.5 V to +7.0 V
DC voltage applied to outputs
in High Z state [2] ................................ –0.5 V to VCC + 0.5 V
Current into outputs (LOW) ........................................ 20 mA
Static discharge voltage
(per MIL-STD-883, Method 3015) .......................... > 2001 V
Latch-up current .................................................... > 200 mA
Operating Range
Range
Automotive-E
Ambient Temperature
VCC
–40 °C to +125 °C
5 V 10%
Electrical Characteristics
Over the Operating Range
Parameter
VOH
Description
Output HIGH voltage
VOL
Output LOW voltage
Test Conditions
-70
Unit
Min
Typ [4]
Max
VCC = 4.5 V, IOH = –1.0 mA
2.4
–
–
VCC = 5.5 V, IOH = –0.1 mA
3.95
–
–
VCC = 5 V, IOH = –0.1 mA
3.6
–
–
VCC = 4.5 V, IOH = –0.1 mA
3.25
–
–
–
–
0.4
V
VCC = 4.5 V, IOL = 2.1 mA
V
VIH
Input HIGH voltage
2.2
–
VCC + 0.3
V
VIL
Input LOW voltage[2]
–0.3
–
0.8
V
IIX
Input leakage current
GND VIN VCC
–10
–
+10
A
IOZ
Output leakage current
GND VIN VCC, Output Disabled
–10
–
+10
A
ICC
VCC operating supply current
f = fMAX = 1/tRC
mA
f = 1 MHz
VCC = 5.5 V,
IOUT = 0 mA
–
6
25
2
12
ISB1
Automatic CE power-down
current – TTL inputs
VCC = 5.5 V, CE1 VIH or CE2 < VIL,
VIN VIH or VIN VIL, f = fMAX
–
0.1
2
mA
ISB2
Automatic CE power-down
current – CMOS inputs
VCC = 5.5 V, CE1 VCC – 0.3 V,
or CE2 0.3 V, VIN VCC – 0.3 V, or
VIN 0.3 V, f = 0
–
2.5
25
A
Notes
2. VIL (min.) = –2.0 V for pulse durations of less than 20 ns.
3. No input may exceed VCC + 0.5 V.
4. Typical values are included for reference only and are not tested or guaranteed. Typical values are measured at VCC = 5.0 V, TA = 25 °C.
Document Number: 001-65526 Rev. *D
Page 4 of 14
CY621282BN MoBL® Automotive
Capacitance
Parameter [5]
Description
Test Conditions
Max
Unit
9
pF
9
pF
Test Conditions
32-pin SOIC
Unit
Test conditions follow standard test methods and
procedures for measuring thermal impedance, per EIA /
JESD51.
66.17
C/W
30.87
C/W
TA = 25 C, f = 1 MHz, VCC = 5.0 V
CIN
Input capacitance
COUT
Output capacitance
Thermal Resistance
Parameter [5]
Description
JA
Thermal resistance
(junction to ambient)
JC
Thermal resistance
(junction to case)
AC Test Loads and Waveforms
Figure 2. AC Test Loads and Waveforms
R1 1800
5V
R1 1800
5V
Output
All Input Pulses
VCC
90%
Output
R2
990
100 pF
Including
JIG and
Scope
(a)
R2
990
5 pF
Including
JIG and
Scope
(b)
90%
10%
GND
Rise TIme:
1 V/ns
10%
Fall TIme:
1 V/ns
Equivalent to:
THÉVENIN Equivalent
639
1.77 V
OUTPUT
Note
5. Tested initially and after any design or process changes that may affect these parameters.
Document Number: 001-65526 Rev. *D
Page 5 of 14
CY621282BN MoBL® Automotive
Data Retention Waveform
Figure 3. Data Retention Waveform
VCC, min.
tCDR
VCC
Data Retention Mode
VDR > 2 V
VCC, min.
tR
CE1
or
CE2
Data Retention Characteristics
Over the Operating Range
Parameter
Description
Min
Typ
Max
Unit
2.0
–
–
V
–
1.5
25
A
Chip deselect to data
retention time
0
–
–
ns
Operation recovery time
70
–
–
ns
VDR
VCC for data retention
ICCDR
Data retention current
tCDR
tR
Document Number: 001-65526 Rev. *D
Conditions
VCC = VDR = 2.0 V,
CE1 VCC – 0.3 V, or
CE2 0.3 V,
VIN VCC – 0.3 V or,
VIN 0.3 V
Automotive-E
Page 6 of 14
CY621282BN MoBL® Automotive
Switching Characteristics
Over the Operating Range
Parameter [6]
Description
CY621282BN-70
Min
Max
Unit
Read Cycle
tRC
Read cycle time
70
–
ns
tAA
Address to data valid
–
70
ns
tOHA
Data hold from address change
5
–
ns
tACE
CE1 LOW to data valid, CE2 HIGH to data valid
–
70
ns
tDOE
OE LOW to data valid
–
35
ns
0
–
ns
–
25
ns
tLZOE
tHZOE
OE LOW to Low Z
[7]
OE HIGH to High Z
[7, 8]
[7]
tLZCE
CE1 LOW to Low Z, CE2 HIGH to Low Z
5
–
ns
tHZCE
CE1 HIGH to High Z, CE2 LOW to High Z [7, 8]
–
25
ns
tPU
CE1 LOW to Power-up, CE2 HIGH to power-up
0
–
ns
CE1 HIGH to Power-down, CE2 LOW to power-down
–
70
ns
tPD
Write Cycle
[9, 10]
tWC
Write cycle time
70
–
ns
tSCE
CE1 LOW to Write End, CE2 HIGH to write end
60
–
ns
tAW
Address set-up to write end
60
–
ns
tHA
Address hold from write end
0
–
ns
tSA
Address set-up to write start
0
–
ns
tPWE
WE pulse width
50
–
ns
tSD
Data set-up to write end
30
–
ns
tHD
Data Hold from write end
0
–
ns
tLZWE
WE HIGH to Low Z [7]
5
–
ns
–
25
ns
tHZWE
WE LOW to High Z
[7, 8]
Notes
6. Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5 V, input pulse levels of 0 to 3.0 V, and output loading of the specified IOL/IOH
and 100-pF load capacitance.
7. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
8. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in (b) of Figure 2 on page 5. Transition is measured 500 mV from steady-state voltage.
9. The internal write time of the memory is defined by the overlap of CE1 LOW, CE2 HIGH, and WE LOW. CE1 and WE must be LOW and CE2 HIGH to initiate a write,
and the transition of any of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that
terminates the write.
10. The minimum write cycle pulse width for Write Cycle No. 3 (WE controlled, OE LOW) should be equal to the sum of tSD and tHZWE.
Document Number: 001-65526 Rev. *D
Page 7 of 14
CY621282BN MoBL® Automotive
Switching Waveforms
Figure 4. Read Cycle No. 1 [11, 12]
tRC
Address
tOHA
DATA I/O
tAA
Previous Data Valid
DATA OUT VALID
Figure 5. Read Cycle No. 2 (OE Controlled) [12, 13]
Address
tRC
CE1
CE2
tACE
OE
tHZOE
tDOE
DATA I/O
tHZCE
tLZOE
High Impedance
DATA OUT VALID
tLZCE
VCC
Supply
Current
High
Impedance
tPD
tPU
50%
50%
ICC
ISB
Figure 6. Write Cycle No. 1 (CE1 or CE2 Controlled) [14, 15]
tWC
Address
tSCE
CE1
CE2
tSA
tSCE
tAW
tHA
tPWE
WE
tSD
DATA I/O
tHD
DATAIN VALID
Notes
11. Device is continuously selected. OE, CE1 = VIL, CE2 = VIH.
12. WE is HIGH for read cycle.
13. Address valid prior to or coincident with CE1 transition LOW and CE2 transition HIGH.
14. Data I/O is high impedance if OE = VIH.
15. If CE1 goes HIGH or CE2 goes LOW simultaneously with WE going HIGH, the output remains in a high-impedance state.
Document Number: 001-65526 Rev. *D
Page 8 of 14
CY621282BN MoBL® Automotive
Switching Waveforms (continued)
Figure 7. Write Cycle No. 2 (WE Controlled, OE HIGH during Write) [16, 17]
tWC
Address
tSCE
CE1
CE2
tSCE
tAW
tHA
tSA
tPWE
WE
OE
tSD
Data I/O
tHD
Data IN Valid
NOTE 18
tHZOE
Figure 8. Write Cycle No. 3 (WE Controlled, OE LOW) [16, 17, 19]
tWC
Address
tSCE
CE1
CE2
tSCE
tAW
tSA
tHA
tPWE
WE
tSD
Data I/O
NOTE 18
tHD
Data IN Valid
tHZWE
tLZWE
Notes
16. Data I/O is high impedance if OE = VIH.
17. If CE1 goes HIGH or CE2 goes LOW simultaneously with WE going HIGH, the output remains in a high-impedance state.
18. During this period the I/Os are in the output state and input signals should not be applied.
19. The minimum write cycle pulse width for Write Cycle No. 3 (WE Controlled, OE LOW) should be equal to the sum of tSD and tHZWE.
Document Number: 001-65526 Rev. *D
Page 9 of 14
CY621282BN MoBL® Automotive
Truth Table
CE1
CE2
OE
WE
I/O0–I/O7
Mode
Power
H
X
X
X
High Z
Power-down
Standby (ISB)
X
L
X
X
High Z
Power-down
Standby (ISB)
L
H
L
H
Data out
Read
Active (ICC)
L
H
X
L
Data in
Write
Active (ICC)
L
H
H
H
High Z
Selected, Outputs disabled
Active (ICC)
Ordering Information
Speed
(ns)
70
Ordering Code
CY621282BNLL-70SXE
Package
Diagram
Package Type
51-85081 32-pin 450-Mil SOIC (Pb-free)
Operating
Range
Automotive-E
Please contact your local Cypress sales representative for availability of these parts.
Ordering Code Definitions
CY 621 2
8
2
B
N LL - 70 S
X
E
Temperature Grade: E = Automotive-E
Pb-free
Package Type:
S = 32-pin SOIC
Speed Grade: 70 ns
LL = Low Power
Nitride Seal Mask fix
B = Process Technology 250 nm
Fixed value
Bus width = × 8
Density = 1-Mbit
Family Code: MoBL SRAM family
Company ID: CY = Cypress
Document Number: 001-65526 Rev. *D
Page 10 of 14
CY621282BN MoBL® Automotive
Package Diagrams
Figure 9. 32-pin Molded SOIC (450 Mils) S32.45/SZ32.45, 51-85081
51-85081 *E
Document Number: 001-65526 Rev. *D
Page 11 of 14
CY621282BN MoBL® Automotive
Acronyms
Acronym
Document Conventions
Description
Units of Measure
CE
Chip Enable
CMOS
Complementary Metal Oxide Semiconductor
°C
degree Celsius
I/O
Input/Output
MHz
megahertz
OE
Output Enable
µA
microampere
SOIC
Small Outline Integrated Circuit
s
microsecond
SRAM
Static Random Access Memory
mA
milliampere
TTL
Transistor-Transistor Logic
mV
millivolt
Write Enable
mW
milliwatt
ns
ohm
%
percent
pF
picofarad
V
volt
W
watt
WE
Document Number: 001-65526 Rev. *D
Symbol
Unit of Measure
nanosecond
Page 12 of 14
CY621282BN MoBL® Automotive
Document History Page
Document Title: CY621282BN MoBL® Automotive, 1-Mbit (128 K × 8) Static RAM
Document Number: 001-65526
Rev.
ECN No.
Issue Date
Orig. of
Change
**
3115909
01/06/2011
RAME
New data sheet.
*A
3288690
06/21/2011
RAME
Updated Functional Description:
Removed the Note “For best-practice recommendations, please refer to the
Cypress application note “System Design Guidelines” on
http://www.cypress.com website.” and its reference.
Updated to new template.
*B
3538379
03/05/2012
TAVA
Updated Electrical Characteristics.
Updated Switching Waveforms.
Updated Package Diagrams.
*C
4703739
03/27/2015
MEMJ
Updated Switching Characteristics:
Added Note 10 and referred the same note in “Write Cycle”.
Updated Switching Waveforms:
Added Note 19 and referred the same note in Figure 8.
Updated Package Diagrams:
spec 51-85081 – Changed revision from *D to *E.
Updated to new template.
Completing Sunset Review.
*D
4725832
04/15/2015
PSR
Document Number: 001-65526 Rev. *D
Description of Change
Updated Functional Description:
Added “For a complete list of related resources, click here.” at the end.
Page 13 of 14
CY621282BN MoBL® Automotive
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at Cypress Locations.
PSoC® Solutions
Products
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Lighting & Power Control
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cypress.com/go/automotive
cypress.com/go/clocks
cypress.com/go/interface
cypress.com/go/powerpsoc
cypress.com/go/memory
cypress.com/go/psoc
cypress.com/go/touch
psoc.cypress.com/solutions
PSoC 1 | PSoC 3 | PSoC 4 | PSoC 5LP
Cypress Developer Community
Community | Forums | Blogs | Video | Training
Technical Support
cypress.com/go/support
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© Cypress Semiconductor Corporation, 2011-2015. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document Number: 001-65526 Rev. *D
Revised April 15, 2015
All products and company names mentioned in this document may be the trademarks of their respective holders.
Page 14 of 14
