CY62128ELL-55SXET

CY62128E MoBL® 1-Mbit (128 K × 8) Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description ■ Very high speed: 45 ns The CY62128E is a high performance CMOS static RAM organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (CE1 HIGH or CE2 LOW). The eight input and output pins (I/O0 through I/O7) are placed in a high impedance state when the device is deselected (CE1 HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or a write operation is in progress (CE1 LOW and CE2 HIGH and WE LOW). ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C ❐ Automotive-E: –40 °C to +125 °C ■ Voltage range: 4.5 V to 5.5 V ■ Pin compatible with CY62128B ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 4 A (Industrial) ■ Ultra low active power ❐ Typical active current: 1.3 mA at f = 1 MHz ■ Easy memory expansion with CE1, CE2, and OE features ■ Automatic power down when deselected ■ Complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Offered in standard Pb-free 32-pin STSOP, 32-pin SOIC, and 32-pin thin small outline package (TSOP) Type I packages To write to the device, take Chip Enable (CE1 LOW and CE2 HIGH) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A16). To read from the device, take Chip Enable (CE1 LOW and CE2 HIGH) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the I/O pins. The CY62128E device is suitable for interfacing with processors that have TTL I/P levels. It is not suitable for processors that require CMOS I/P levels. Please see Electrical Characteristics on page 5 for more details and suggested alternatives. For a complete list of related resources, click here. Logic Block Diagram 0 I/O I/O1 SENSE AMPS ROW DECODER 1 128K x 8 ARRAY I/O I/O22 I/O I/O33 I/O4 I/O I/O5 I/O I/O 6 I/O 6 • POWER DOWN I/O 7 I/O 7 A16 A14 A12 OE A15 COLUMN DECODER WE Cypress Semiconductor Corporation Document Number: 38-05485 Rev. *P I/O I/O0 INPUT BUFFER A13 CE1 CE2 A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised May 4, 2017 CY62128E MoBL® Contents Pin Configuration ............................................................. 3 Product Portfolio .............................................................. 4 Maximum Ratings ............................................................. 5 Operating Range ............................................................... 5 Electrical Characteristics ................................................. 5 Capacitance ...................................................................... 6 Thermal Resistance .......................................................... 6 AC Test Loads and Waveforms ....................................... 6 Data Retention Characteristics ....................................... 7 Data Retention Waveform ................................................ 7 Switching Characteristics ................................................ 8 Switching Waveforms ...................................................... 9 Truth Table ...................................................................... 12 Document Number: 38-05485 Rev. *P Ordering Information ...................................................... 13 Ordering Code Definitions ......................................... 13 Package Diagrams .......................................................... 14 Acronyms ........................................................................ 17 Document Conventions ................................................. 17 Units of Measure ....................................................... 17 Document History Page ................................................. 18 Sales, Solutions, and Legal Information ...................... 20 Worldwide Sales and Design Support ....................... 20 Products .................................................................... 20 PSoC® Solutions ...................................................... 20 Cypress Developer Community ................................. 20 Technical Support ..................................................... 20 Page 2 of 20 CY62128E MoBL® Pin Configuration 4 A3 A2 A1 A0 /O0 /O1 O2 VSS 8 9 10 11 12 13 14 15 16 25 24 23 22 21 20 19 18 17 A11 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 Figure 1. 32-pin STSOP pinout [1] A11 A9 A8 A13 WE CE2 A15 VCC NC A16 A14 A12 A7 A6 A5 A4 25 26 26 27 28 29 30 31 32 1 2 3 4 5 6 7 8 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 STSOP Top View (not to scale) OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3 Figure 2. 32-pin TSOP I pinout [1] 32-Pin SOIC Top View C 1 16 14 12 A7 A6 A5 2 3 4 A 5 6 7 32 31 30 29 28 27 26 VCC A15 CE2 WE A13 A8 A9 A A11 A9 A8 A13 WE CE2 A15 VCC NC A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 TSOP I Top View (not to scale) Figure 3. 32-pin SOIC pinout [1] Top View Top View NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 CE2 WE A13 A8 A9 A11 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3 A8 A13 WE CE2 A15 VCC NC A16 A14 A12 A7 A6 A5 A4 A11 A9 A8 A13 WE CE2 A15 VCC NC A16 A14 3 4 5 6 7 8 9 10 11 12 13 14 15 16 25 26 27 26 28 29 30 31 32 1 2 3 TSOP I Top View (not to scale) STSOP Top View (not to scale) Note 1. NC pins are not connected on the die. Document Number: 38-05485 Rev. *P Page 3 of 20 CY62128E MoBL® Product Portfolio Power Dissipation Product VCC Range (V) Range Min Typ [2] Speed (ns) Max CY62128ELL Industrial / Automotive-A 4.5 5.0 5.5 CY62128ELL Automotive-E 4.5 5.0 5.5 45 [3] 55 Operating ICC (mA) f = 1MHz f = fmax Standby ISB2 (µA) Typ [2] Max Typ [2] Max Typ [2] Max 1.3 2 11 16 1 4 1.3 4 11 35 1 30 Notes 2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C. 3. When used with a 100 pF capacitive load and resistive loads as shown on page 4, access times of 55 ns (tAA, tACE) and 25 ns (tDOE) are guaranteed. Document Number: 38-05485 Rev. *P Page 4 of 20 CY62128E MoBL® Maximum Ratings Output current into outputs (LOW) ............................. 20 mA Exceeding maximum ratings may shorten the useful life of the device. User guidelines are not tested. Storage temperature ................................ –65 °C to +150 °C Ambient temperature with power applied ................................... –55 °C to +125 °C Supply voltage to ground potential [4, 5] ... –0.5 V to 6.0 V (VCC(max) + 0.5 V) DC voltage applied to outputs in High Z State [4, 5] ......... –0.5 V to 6.0 V (VCC(max) + 0.5 V) Static discharge voltage (MIL-STD-883, Method 3015) ................................. > 2001 V Latch up current ..................................................... > 200 mA Operating Range Device CY62128ELL Ambient Temperature Range VCC[6] Industrial / –40 °C to +85 °C 4.5 V to 5.5 V Automotive-A Automotive-E –40 °C to +125 °C DC input voltage[4, 5] ........ –0.5 V to 6.0 V (VCC(max) + 0.5 V) Electrical Characteristics Over the Operating Range Parameter VOH Description Output HIGH voltage Test Conditions VCC = 4.5 V VCC = 5.5 V IOH = –1 mA Min Typ [7] 2.4 – Max – Min Typ [7] 2.4 [8] – Unit Max – – – – – 0.4 – – 0.4 V VCC = 4.5 V to 5.5 V 2.2 – VCC + 0.5 2.2 – VCC + 0.5 V Input LOW voltage VCC = 4.5 V to 5.5 V –0.5 – 0.8 –0.5 – 0.8 V GND < VI < VCC IOL = 2.1 mA VIH Input HIGH voltage VIL 3.4 V [8] – Output LOW voltage 3.4 55 ns (Automotive-E) – VOL IOH = –0.1 mA 45 ns (Industrial/ Automotive-A) IIX Input leakage current –1 – +1 –4 – +4 A IOZ Output leakage current GND < VO < VCC, Output Disabled –1 – +1 –4 – +4 A ICC VCC Operating supply current VCC = VCC(max) IOUT = 0 mA CMOS levels – 11 16 – 11 35 mA – 1.3 2 – 1.3 4 Automatic CE CE1 > VCC – 0.2 V or CE2 < 0.2 V, power-down VIN > VCC – 0.2 V or VIN < 0.2 V, Current—CMOS inputs f = 0, VCC = VCC(max) – 1 4 – 1 30 ISB2 [9] f = fmax = 1/tRC f = 1 MHz A Notes 4. VIL(min) = –2.0 V for pulse durations less than 20 ns. 5. VIH(max) = VCC + 0.75 V for pulse durations less than 20 ns. 6. Full device AC operation assumes a 100 s ramp time from 0 to VCC(min) and 200 s wait time after VCC stabilization. 7. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C. 8. Please note that the maximum VOH limit does not exceed minimum CMOS VIH of 3.5 V. If you are interfacing this SRAM with 5 V legacy processors that require a minimum VIH of 3.5 V, please refer to Application Note AN6081 for technical details and options you may consider. 9. Only chip enables (CE1 and CE2) must be at CMOS level to meet the ISB2 / ICCDR spec. Other inputs can be left floating. Document Number: 38-05485 Rev. *P Page 5 of 20 CY62128E MoBL® Capacitance Parameter [10] Description CIN Input capacitance COUT Output capacitance Test Conditions TA = 25 °C, f = 1 MHz, VCC = VCC(typ) Max Unit 10 pF 10 pF Thermal Resistance Parameter [10] Test Conditions 32-pin SOIC Package 32-pin STSOP Package 32-pin TSOP Package Unit Still Air, soldered on a 3 × 4.5 inch, two-layer printed circuit board 48.67 32.56 33.01 C/W 25.86 3.59 3.42 C/W Description JA Thermal resistance (junction to ambient) JC Thermal resistance (junction to case) AC Test Loads and Waveforms Figure 4. AC Test Loads and Waveforms R1 VCC OUTPUT ALL INPUT PULSES 3.0 V 30 pF R2 INCLUDING JIG AND SCOPE 90% 10% GND Rise Time = 1 V/ns Equivalent to: 90% 10% Fall Time = 1 V/ns THEVENIN EQUIVALENT OUTPUT RTH Parameters Value Unit R1 1800  R2 990  RTH 639  VTH 1.77 V V Note 10. Tested initially and after any design or process changes that may affect these parameters. Document Number: 38-05485 Rev. *P Page 6 of 20 CY62128E MoBL® Data Retention Characteristics Over the Operating Range Parameter VDR ICCDR Description Min Typ [11] Max Unit 2 – – V Industrial / Automotive-A – – 4 Automotive-E – – 30 0 – – ns CY62128ELL-45 45 – – ns CY62128ELL-55 55 – – Conditions VCC for data retention [12] Data retention current VCC = VDR, CE1 > VCC 0.2 V or CE2 < 0.2 V, VIN > VCC – 0.2 V or VIN < 0.2 V tCDR [13] Chip deselect to data retention time tR [14] Operation recovery time A A Data Retention Waveform Figure 5. Data Retention Waveform [15] DATA RETENTION MODE VCC VCC(min) tCDR VDR > 2.0 V VCC(min) tR CE Notes 11. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C. 12. Only chip enables (CE1 and CE2) must be at CMOS level to meet the ISB2 / ICCDR spec. Other inputs can be left floating. 13. Tested initially and after any design or process changes that may affect these parameters. 14. Full device AC operation requires linear VCC ramp from VDR to VCC(min) > 100 µs or stable at VCC(min) > 100 µs. 15. CE is the logical combination of CE1 and CE2. When CE1 is LOW and CE2 is HIGH, CE is LOW; when CE1 is HIGH or CE2 is LOW, CE is HIGH. Document Number: 38-05485 Rev. *P Page 7 of 20 CY62128E MoBL® Switching Characteristics Over the Operating Range Parameter [16] Description 45 ns (Industrial / Automotive-A) Min 55 ns (Automotive-E) Max Min Unit Max Read Cycle tRC Read cycle time 45 – 55 – ns tAA Address to data valid – 45 – 55 ns tOHA Data hold from address change 10 – 10 – ns tACE CE1 LOW and CE2 HIGH to data valid – 45 – 55 ns tDOE OE LOW to data valid – 22 – 25 ns tLZOE OE LOW to Low Z[17] 5 – 5 – ns tHZOE tLZCE OE HIGH to High Z[17, 18] – 18 – 20 ns Z[17] 10 – 10 – ns Z[17, 18] CE1 LOW and CE2 HIGH to Low tHZCE CE1 HIGH or CE2 LOW to High – 18 – 20 ns tPU CE1 LOW and CE2 HIGH to power-up 0 – 0 – ns CE1 HIGH or CE2 LOW to power-down – 45 – 55 ns tPD Write Cycle [19, 20] tWC Write cycle time 45 – 55 – ns tSCE CE1 LOW and CE2 HIGH to write end 35 – 40 – ns tAW Address setup to write end 35 – 40 – ns tHA Address hold from write end 0 – 0 – ns tSA Address setup to write start 0 – 0 – ns tPWE WE pulse width 35 – 40 – ns tSD Data setup to write end 25 – 25 – ns tHD Data hold from write end 0 – 0 – ns – 18 – 20 ns 10 – 10 – ns tHZWE tLZWE WE LOW to High Z WE HIGH to Low [17, 18] Z[17] Notes 16. Test conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns (1 V/ns) or less, timing reference levels of 1.5 V, input pulse levels of 0 to 3 V, and output loading of the specified IOL/IOH as shown in the Figure 4 on page 6. 17. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 18. tHZOE, tHZCE, and tHZWE transitions are measured when the outputs enter a high impedance state. 19. The internal Write time of the memory is defined by the overlap of WE, CE = VIL. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write. 20. The minimum write cycle pulse width for Write Cycle No. 3 (WE Controlled, OE LOW) should be equal to sum of tSD and tHZWE. Document Number: 38-05485 Rev. *P Page 8 of 20 CY62128E MoBL® Switching Waveforms Figure 6. Read Cycle 1 (Address Transition Controlled) [21, 22] tRC RC ADDRESS tOHA DATA OUT tAA PREVIOUS DATA VALID DATA VALID Figure 7. Read Cycle No. 2 (OE Controlled) [22, 23, 24] ADDRESS tRC CE tACE OE tHZOE tDOE tLZOE HIGH IMPEDANCE DATA OUT VCC SUPPLY CURRENT tLZCE tHZCE HIGH IMPEDANCE DATA VALID tPD tPU 50% 50% ICC ISB Notes 21. The device is continuously selected. OE, CE1 = VIL, CE2 = VIH. 22. WE is HIGH for read cycle. 23. Address valid before or similar to CE1 transition LOW and CE2 transition HIGH. 24. CE is the logical combination of CE1 and CE2. When CE1 is LOW and CE2 is HIGH, CE is LOW; when CE1 is HIGH or CE2 is LOW, CE is HIGH. Document Number: 38-05485 Rev. *P Page 9 of 20 CY62128E MoBL® Switching Waveforms (continued) Figure 8. Write Cycle No. 1 (WE Controlled) [25, 26, 27, 28] tWC ADDRESS tSCE CE tAW tSA tHA tPWE WE OE tSD DATA I/O NOTE 29 tHD DATA VALID tHZOE Notes 25. CE is the logical combination of CE1 and CE2. When CE1 is LOW and CE2 is HIGH, CE is LOW; when CE1 is HIGH or CE2 is LOW, CE is HIGH. 26. The internal Write time of the memory is defined by the overlap of WE, CE = VIL. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write. 27. Data I/O is high impedance if OE = VIH. 28. If CE1 goes HIGH or CE2 goes LOW simultaneously with WE HIGH, the output remains in high impedance state. 29. During this period, the I/Os are in output state and input signals must not be applied. Document Number: 38-05485 Rev. *P Page 10 of 20 CY62128E MoBL® Switching Waveforms (continued) Figure 9. Write Cycle No. 2 (CE1 or CE2 Controlled) [30, 31, 32, 33] tWC ADDRESS tSCE CE tSA tAW tHA tPWE WE tSD DATA I/O tHD DATA VALID Figure 10. Write Cycle No. 3 (WE Controlled, OE LOW) [30, 33, 34] tWC ADDRESS tSCE CE tAW tSA tHA tPWE WE tSD DATA I/O NOTE 35 tHD DATA VALID tHZWE tLZWE Notes 30. CE is the logical combination of CE1 and CE2. When CE1 is LOW and CE2 is HIGH, CE is LOW; when CE1 is HIGH or CE2 is LOW, CE is HIGH. 31. The internal Write time of the memory is defined by the overlap of WE, CE = VIL. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write. 32. Data I/O is high impedance if OE = VIH. 33. If CE1 goes HIGH or CE2 goes LOW simultaneously with WE HIGH, the output remains in high impedance state. 34. The minimum write cycle pulse width should be equal to sum of tSD and tHZWE. 35. During this period, the I/Os are in output state and input signals must not be applied. Document Number: 38-05485 Rev. *P Page 11 of 20 CY62128E MoBL® Truth Table CE1 WE OE [36] X X High Z Deselect/Power down Standby (ISB) [36] L X X High Z Deselect/Power down Standby (ISB) L H H L Data Out Read Active (ICC) L H L X Data In Write Active (ICC) L H H H High Z Selected, outputs disabled Active (ICC) H X CE2 X Inputs/Outputs Mode Power Note 36. The ‘X’ (Don’t care) state for the Chip enables in the truth table refer to the logic state (either HIGH or LOW). Intermediate voltage levels on these pins is not permitted. Document Number: 38-05485 Rev. *P Page 12 of 20 CY62128E MoBL® Ordering Information Speed (ns) 45 55 Ordering Code Package Diagram Package Type CY62128ELL-45SXI 51-85081 32-pin 450-Mil SOIC (Pb-free) CY62128ELL-45ZAXI 51-85094 32-pin STSOP (Pb-free) CY62128ELL-45ZXI 51-85056 32-pin TSOP Type I (Pb-free) CY62128ELL-45SXA 51-85081 32-pin 450-Mil SOIC (Pb-free) CY62128ELL-45ZXA 51-85056 32-pin TSOP Type I (Pb-free) CY62128ELL-55SXE 51-85081 32-pin 450-Mil SOIC (Pb-free) CY62128ELL-55ZAXE 51-85094 32-pin STSOP (Pb-free) Operating Range Industrial Automotive-A Automotive-E Contact your local Cypress sales representative for availability of these parts. Ordering Code Definitions CY 621 2 8 E LL - XX XX X X Temperature Grade: X = I or A or E I = Industrial; A = Automotive-A; E = Automotive-E Pb-free Package Type: XX = S or ZA or Z S = 32-pin SOIC ZA = 32-pin STSOP Z = 32-pin TSOP Type I Speed Grade: XX = 45 ns or 55 ns LL = Low Power Process Technology: E = 90 nm Technology Bus width = × 8 Density = 1-Mbit Family Code: MoBL SRAM family Company ID: CY = Cypress Document Number: 38-05485 Rev. *P Page 13 of 20 CY62128E MoBL® Package Diagrams Figure 11. 32-pin Molded SOIC (450 Mil) S32.45/SZ32.45 Package Outline, 51-85081 51-85081 *E Document Number: 38-05485 Rev. *P Page 14 of 20 CY62128E MoBL® Package Diagrams (continued) Figure 12. 32-pin Small TSOP (8 × 13.4 × 1.2 mm) ZA32 Package Outline, 51-85094 51-85094 *G Document Number: 38-05485 Rev. *P Page 15 of 20 CY62128E MoBL® Package Diagrams (continued) Figure 13. 32-pin TSOP I (8 × 20 × 1.0 mm) Z32R Package Outline, 51-85056 51-85056 *G Document Number: 38-05485 Rev. *P Page 16 of 20 CY62128E MoBL® Acronyms Acronym Document Conventions Description Units of Measure CE Chip Enable CMOS Complementary Metal Oxide Semiconductor °C degree Celsius I/O Input/Output MHz megahertz OE Output Enable A microampere SRAM Static Random Access Memory s microsecond SOIC Small Outline Integrated Circuit mA milliampere STSOP Small Thin Small Outline Package mm millimeter TSOP Thin Small Outline Package ns nanosecond WE Write Enable  ohm % percent pF picofarad V volt W watt Document Number: 38-05485 Rev. *P Symbol Unit of Measure Page 17 of 20 CY62128E MoBL® Document History Page Document Title: CY62128E MoBL®, 1-Mbit (128 K × 8) Static RAM Document Number: 38-05485 Rev. ECN No. Submission Date Orig. of Change ** 203120 See ECN AJU New data sheet *A 299472 See ECN SYT Converted from Advance Information to Preliminary Changed tOHA from 6 ns to 10 ns for both 35 ns and 45 ns, respectively Changed tDOE from 15 ns to 18 ns for 35 ns speed bin Changed tHZOE, tHZWE from 12 and 15 ns to 15 and 18 ns for the 35 and 45 ns speed bins, respectively Changed tHZCE from 12 and 15 ns to 18 and 22 ns for the 35 and 45 ns speed bins, respectively Changed tSCE from 25 and 40 ns to 30 and 35 ns for the 35 and 45 ns speed bins, respectively Changed tSD from 15 and 20 ns to 18 and 22 ns for the 35 and 45 ns speed bins, respectively Added Pb-free package information Added footnote #9 Changed operating range for SOIC package from Commercial to Industrial Modified signal transition time from 5 ns to 3 ns in footnote #11 Changed max of ISB1, ISB2 and ICCDR from 1.0 A to 1.5 A *B 461631 See ECN NXR Converted from Preliminary to Final Included Automotive Range and 55 ns speed bin Removed 35 ns speed bin Removed “L” version of CY62128E Removed Reverse TSOP I package from Product offering Changed ICC (Typ) from 8 mA to 11 mA and ICC (max) from 12 mA to 16 mA for f = fmax Changed ICC (max) from 1.5 mA to 2.0 mA for f = 1 MHz Removed ISB1 DC Specs from Electrical characteristics table Changed ISB2 (max) from 1.5 A to 4 A Changed ISB2 (Typ) from 0.5 A to 1 A Changed ICCDR (max) from 1.5 A to 4 A Changed the AC Test load Capacitance value from 100 pF to 30 pF Changed tLZOE from 3 to 5 ns Changed tLZCE from 6 to 10 ns Changed tHZCE from 22 to 18 ns Changed tPWE from 30 to 35 ns Changed tSD from 22 to 25 ns Changed tLZWE from 6 to 10 ns Updated the Ordering Information Table Description of Change *C 464721 See ECN NXR Updated the Block Diagram on page # 1 *D 563144 See ECN AJU Added footnote 4 on page 2 *E 1024520 See ECN VKN Added Automotive-A information Converted Automotive-E specs to final Added footnote #9 related to ISB2 and ICCDR Updated Ordering Information table *F 2548575 08/05/08 NXR Corrected typo error in Ordering Information table *G 2934396 06/03/10 VKN Added footnote #22 related to chip enable Updated package diagrams Updated template *H 3113780 12/17/2010 PRAS Document Number: 38-05485 Rev. *P Updated Logic Block Diagram. Added Ordering Code Definitions. Page 18 of 20 CY62128E MoBL® Document History Page (continued) Document Title: CY62128E MoBL®, 1-Mbit (128 K × 8) Static RAM Document Number: 38-05485 Rev. ECN No. Submission Date Orig. of Change *I 3223635 04/12/2011 RAME Removed V30 value from Ordering Code Definition. Updated Package diagram 51-85056 from *E to *F and 51-85094 *E to *F Added Acronyms and Units of Measure. Updated to new template. *J 3292276 06/24/2011 RAME Updated Data Retention Characteristics (Changed the conditions and minimum value of tR parameter). Updated to new template. *K 4018425 06/03/2013 MEMJ Updated Functional Description. Description of Change Updated Electrical Characteristics: Added one more Test Condition “VCC = 5.5 V, IOH = –0.1 mA” for VOH parameter and added maximum value corresponding to that Test Condition. Added Note 8 and referred the same note in maximum value for VOH parameter corresponding to Test Condition “VCC = 5.5 V, IOH = –0.1 mA”. Updated Package Diagrams: spec 51-85081 – Changed revision from *C to *E. Completing Sunset Review. *L 4410948 06/17/2014 VINI Updated Switching Characteristics: Added Note 20 and referred the same note in “Write Cycle”. Updated Switching Waveforms: Added Note 34 and referred the same note in Figure 10. Updated Package Diagrams: spec 51-85094 – Changed revision from *F to *G. spec 51-85056 – Changed revision from *F to *G. Updated to new template. Completing Sunset Review. *M 4478332 08/19/2014 BMAH Updated Truth Table: Fixed typo (Replaced WE with WE and OE with OE in the header row). *N 4581542 11/27/2014 VINI Updated Functional Description: Added “For a complete list of related resources, click here.” at the end. Updated Maximum Ratings: Referred Notes 4, 5 in “Supply voltage to ground potential”. *O 4797476 06/15/2015 *P 5726469 05/04/2017 Document Number: 38-05485 Rev. *P VINI Updated to new template. Completing Sunset Review. AESATMP7 Updated Cypress Logo and Copyright. Page 19 of 20 CY62128E MoBL® Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. PSoC® Solutions Products Automotive Clocks & Buffers Interface Lighting & Power Control Memory cypress.com/go/automotive cypress.com/go/clocks cypress.com/go/interface cypress.com/go/powerpsoc cypress.com/go/memory PSoC cypress.com/go/psoc Touch Sensing cypress.com/go/touch USB Controllers Wireless/RF psoc.cypress.com/solutions PSoC 1 | PSoC 3 | PSoC 4 | PSoC 5LP| PSoC 6 Cypress Developer Community Community | Forums | Blogs | Video | Training Technical Support cypress.com/go/support cypress.com/go/USB cypress.com/go/wireless © Cypress Semiconductor Corporation, 2004-2017. This document is the property of Cypress Semiconductor Corporation and its subsidiaries, including Spansion LLC ("Cypress"). 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You shall indemnify and hold Cypress harmless from and against all claims, costs, damages, and other liabilities, including claims for personal injury or death, arising from or related to any Unintended Uses of Cypress products. Cypress, the Cypress logo, Spansion, the Spansion logo, and combinations thereof, WICED, PSoC, CapSense, EZ-USB, F-RAM, and Traveo are trademarks or registered trademarks of Cypress in the United States and other countries. For a more complete list of Cypress trademarks, visit cypress.com. Other names and brands may be claimed as property of their respective owners. Document Number: 38-05485 Rev. *P Revised May 4, 2017 Page 20 of 20