CY62136VNLL-70BAI

CY62136VN MoBL® 2-Mbit (128K x 16) Static RAM Features • Temperature Ranges — Industrial: –40°C to 85°C — Automotive-A: –40°C to 85°C — Automotive-E: –40°C to 125°C • High speed: 55 ns • Wide voltage range: 2.7V–3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected • CMOS for optimum speed/power • Available in standard Pb-free 44-pin TSOP Type II, Pb-free and non Pb-free 48-ball FBGA packages portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A16). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A16). Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O8 to I/O15. See the Truth Table at the back of this data sheet for a complete description of read and write modes. Functional Description[1] The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in Logic Block Diagram DATA IN DRIVERS A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 PinConfigurations[3] TSOP II (Forward) Top View 128K x 16 RAM Array I/O0 – I/O7 I/O8 – I/O15 COLUMN DECODER BHE WE CE OE BLE A4 A3 A2 A1 A0 CE I/O 0 I/O 1 I/O 2 I/O 3 VCC VSS I/O 4 I/O 5 I/O 6 I/O 7 WE A 16 A 15 A 14 A 13 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE BHE BLE I/O 15 I/O 14 I/O 13 I/O 12 VSS VCC I/O 11 I/O 10 I/O 9 I/O 8 NC A8 A9 A 10 A 11 NC ROW DECODER A11 A12 A13 Note: 1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com. A14 A15 A16 SENSE AMPS Cypress Semiconductor Corporation Document #: 001-06510 Rev. *A • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised August 3, 2006 [+] [+] Feedback CY62136VN MoBL® Product Portfolio Power Dissipation VCC Range (V) Product CY62136VNLL Min 2.7 Typ.[2] 3.0 Max 3.6 Speed 55 55 70 70 70 Ranges Industrial Automotive-A Industrial Automotive-A Automotive-E Operating, ICC (mA) Typ.[2] 7 7 7 7 7 Maximum 20 20 15 15 20 Standby, ISB2 (µA) Typ.[2] 1 1 1 1 1 Maximum 15 15 15 15 20 Pin Configurations[3] FBGA 1 BLE I/O8 I/O9 VSS VCC I/O14 I/O15 NC 2 OE BHE I/O10 I/O11 I/O12 I/O13 NC A8 Top View 4 3 A0 A3 A5 NC NC A14 A12 A9 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE I/O1 I/O3 I/O4 I/O5 WE A11 6 NC I/O0 I/O2 VCC VSS I/O6 I/O7 NC A B C D E F G H Notes: 2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC Typ, TA = 25°C. 3. NC pins are not connected on the die. Document #: 001-06510 Rev. *A Page 2 of 12 [+] [+] Feedback CY62136VN MoBL® Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature .................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage to Ground Potential ............... –0.5V to +4.6V DC Voltage Applied to Outputs in High-Z State[4] ....................................–0.5V to VCC + 0.5V DC Input Voltage[4] .................................–0.5V to VCC + 0.5V Output Current into Outputs (LOW)............................ 20 mA Static Discharge Voltage........................................... > 2001V (per MIL-STD-883, Method 3015) Latch-up Current..................................................... > 200 mA Operating Range Range Industrial Automotive-A Automotive-E Ambient Temperature [TA][5] −40°C to +85°C –40°C to +85°C –40°C to +125°C VCC 2.7V to 3.6V Electrical Characteristics Over the Operating Range -55 Parameter VOH VOL VIH VIL IIX Description Test Conditions Min. 2.4 0.4 2.2 –0.5 Ind’l Auto-A Auto-E IOZ Output Leakage Current GND < VO < VCC, Output Disabled Ind’l Auto-A Auto-E ICC VCC Operating Supply Current f = fMAX = 1/tRC VCC = 3.6V, Ind’l IOUT = 0 mA, Auto-A CMOS Levels Auto-E Ind’l Auto-A Auto-E ISB1 Automatic CE Power-down Current— CMOS Inputs Automatic CE Power-down Current— CMOS Inputs CE > VCC − 0.3V, VIN > VCC − 0.3V or VIN < 0.3V, f = fMAX CE > VCC − 0.3V VIN > VCC − 0.3V or VIN < 0.3V, f = 0 Ind’l Auto-A Auto-E Ind’l Auto-A Auto-E 1 1 15 15 1 1 1 100 100 7 7 1 1 20 20 2 2 –1 –1 +1 +1 –1 –1 VCC + 0.5V 0.8 +1 +1 2.2 –0.5 –1 –1 –10 –1 –1 –10 7 7 7 1 1 1 Typ.[2] Max. Output HIGH Voltage VCC = 2.7V, IOH = −1.0 mA Output LOW Voltage VCC = 2.7V, IOL = 2.1 mA Input HIGH Voltage Input LOW Voltage Input Leakage Current VCC = 3.6V VCC = 2.7V GND < VI < VCC 2.4 0.4 VCC + 0.5V 0.8 +1 +1 +10 +1 +1 +10 15 15 20 2 2 2 100 100 100 15 15 20 µA µA µA µA mA -70 Min. Typ.[2] Max. Unit V V V V µA µA µA µA µA µA mA f = 1 MHz ISB2 Capacitance[6] Parameter CIN COUT Description Input Capacitance Output Capacitance Test Conditions TA = 25°C, f = 1 MHz, VCC = VCC(typ) Max. 6 8 Unit pF pF Notes: 4. VIL(min) = –2.0V for pulse durations less than 20 ns. 5. TA is the “Instant-On” case temperature. 6. Tested initially and after any design or process changes that may affect these parameters. Document #: 001-06510 Rev. *A Page 3 of 12 [+] [+] Feedback CY62136VN MoBL® Thermal Resistance[6] Parameter ΘJA ΘJC Description Thermal Resistance (Junction to Ambient) Thermal Resistance (Junction to Case) Test Conditions Still Air, soldered on a 4.25 x 1.125 inch, 4-layer printed circuit board TSOPII 60 22 FBGA 55 16 Unit °C/W °C/W AC Test Loads and Waveforms R1 VCC OUTPUT 30 pF INCLUDING JIG AND SCOPE R2 VCC OUTPUT GND 5 pF INCLUDING JIG AND SCOPE R2 Rise Time: 1 V/ns R1 VCC Typ 10% ALL INPUT PULSES 90% 90% 10% Fall Time: 1 V/ns (c) (b) Equivalent to: THÉVENIN EQUIVALENT RTH (a) OUTPUT V Parameters R1 R2 RTH VTH Value 1105 1550 645 1.75 Unit Ohms Ohms Ohms Volts Data Retention Characteristics (Over the Operating Range) Parameter VDR ICCDR tCDR[6] tR[7] Description VCC for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time VCC = 1.0V, CE > VCC − 0.3V, VIN > VCC − 0.3V or VIN < 0.3V, 0 70 Conditions[9] Min. 1.0 0.5 7.5 Typ.[2] Max. Unit V µA ns ns Data Retention Waveform DATA RETENTION MODE VCC VCC(min.) tCDR VDR > 1.0 V VCC(min.) tR CE Note: 7. Full device operation requires linear VCC ramp from VDR to VCC(min) > 100 ms or stable at VCC(min) > 100 ms. 8. No input may exceed VCC + 0.3V Document #: 001-06510 Rev. *A Page 4 of 12 [+] [+] Feedback CY62136VN MoBL® Switching Characteristics Over the Operating Range [9] 55 ns Parameter Read Cycle tRC tAA tOHA tACE tDOE tLZOE tHZOE tLZCE tHZCE tPU tPD tDBE tLZBE tHZBE Write Cycle[12, 13] tWC tSCE tAW tHA tSA tPWE tBW tSD tHD tHZWE tLZWE Write Cycle Time CE LOW to Write End Address Set-up to Write End Address Hold from Write End Address Set-up to Write Start WE Pulse Width BLE / BHE LOW to Write End Data Set-up to Write End Data Hold from Write End WE LOW to High-Z[10, 11] [10] 70 ns Max. Min. 70 55 70 10 55 25 70 35 5 25 25 10 25 25 0 55 25 70 35 5 25 25 70 60 60 0 0 50 60 30 0 20 25 10 Max. Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Description Read Cycle Time Address to Data Valid Data Hold from Address Change CE LOW to Data Valid OE LOW to Data Valid OE LOW to Low-Z [10] Min. 55 10 5 10 0 OE HIGH to High-Z[10, 11] CE LOW to Low-Z[10] CE HIGH to High-Z[10, 11] CE LOW to Power-up CE HIGH to Power-down BLE / BHE LOW to Data Valid BLE / BHE LOW to BLE / BHE HIGH to Low-Z[10, 11] High-Z[12] 55 45 45 0 0 40 50 25 0 5 5 WE HIGH to Low-Z Notes: 9. Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to VCC typ., and output loading of the specified IOL/IOH and 30-pF load capacitance. 10. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 11. tHZOE, tHZCE, and tHZWE are specified with CL = 5 pF as in (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage. 12. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write. 13. The minimum write cycle time for write cycle 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD. Document #: 001-06510 Rev. *A Page 5 of 12 [+] [+] Feedback CY62136VN MoBL® Switching Waveforms Read Cycle No. 1[14, 15] tRC ADDRESS tOHA DATA OUT PREVIOUS DATA VALID tAA DATA VALID Read Cycle No. 2[15, 16] tRC tPD tHZCE CE tACE OE tDOE BHE/BLE tLZOE tHZOE tHZBE tDBE tLZBE DATA OUT HIGH IMPEDANCE tLZCE VCC SUPPLY CURRENT tPU 50% 50% ISB ICC DATA VALID HIGH IMPEDANCE Notes: 14. Device is continuously selected. OE, CE = VIL. 15. WE is HIGH for read cycle. 16. Address valid prior to or coincident with CE transition LOW. Document #: 001-06510 Rev. *A Page 6 of 12 [+] [+] Feedback CY62136VN MoBL® Switching Waveforms (continued) Write Cycle No. 1 (WE Controlled)[12, 17, 18] tWC ADDRESS CE tAW WE tSA tPWE tHA BHE/BLE tBW OE tSD DATA I/O NOTE 19 tHZOE DATAIN VALID tHD Write Cycle No. 2 (CE Controlled)[12, 17, 18] tWC ADDRESS CE tSA tAW tHA tSCE BHE/BLE tBW WE tPWE tSD tHD DATA I/O DATA VALID IN Notes: 17. Data I/O is high impedance if OE = VIH. 18. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state. 19. During this period, the I/Os are in output state and input signals should not be applied. Document #: 001-06510 Rev. *A Page 7 of 12 [+] [+] Feedback CY62136VN MoBL® Switching Waveforms (continued) Write Cycle No. 3 (WE Controlled, OE LOW)[13, 18] tWC ADDRESS CE tAW tBW tSA tHA BHE/BLE WE tSD DATA I/O NOTE 19 tHZWE DATA VALID IN tHD tLZWE Write Cycle No. 4 (BHE/BLE Controlled, OE LOW)[19] tWC ADDRESS CE tAW tBW tSA WE tSD DATA I/O tHD tHA BHE/BLE NOTE 19 tHZWE DATA VALID IN tLZWE Document #: 001-06510 Rev. *A Page 8 of 12 [+] [+] Feedback CY62136VN MoBL® Typical DC and AC Characteristics Normalized Operating Current vs. Supply Voltage Standby Current vs. Supply Voltage 35 MoBL 30 25 ISB (µA) 20 15 10 5 0 2.2 2.7 3.2 SUPPLY VOLTAGE (V) 3.7 1.0 2.7 2.8 3.7 1.9 SUPPLY VOLTAGE (V) 1.4 1.2 MoBL 1.0 ICC 0.8 0.6 0.4 0.2 0.0 1.7 Access Time vs. Supply Voltage 80 70 60 50 TAA (ns) 40 30 20 10 1.0 1.9 2.7 2.8 3.7 MoBL SUPPLY VOLTAGE (V) Truth Table CE H L L L L L L L L L L WE X H H H H H H H L L L OE X L L L L H H H X X X BHE X L H L H L H L L H L BLE X L L H H L L H L L H Inputs/Outputs High-Z Data Out (I/O0–I/O15) Data Out (I/O0–I/O7); I/O8–I/O15 in High-Z Data Out (I/O8–I/O15); I/O0–I/O7 in High-Z High-Z High-Z High-Z High-Z Data In (I/O0–I/O15) Data In (I/O0–I/O7); I/O8–I/O15 in High-Z Data In (I/O8–I/O15); I/O0 –I/O7 in High-Z Mode Deselect/Power-down Read Read Read Deselect/Output Disabled Deselect/Output Disabled Deselect/Output Disabled Deselect/Output Disabled Write Write Write Power Standby (ISB) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Document #: 001-06510 Rev. *A Page 9 of 12 [+] [+] Feedback CY62136VN MoBL® Ordering Information Speed (ns) 55 Ordering Code CY62136VNLL-55ZXI CY62136VNLL-55BAI CY62136VNLL-55ZSXA 70 CY62136VNLL-70ZXI CY62136VNLL-70BAI CY62136VNLL-70BAXA CY62136VNLL-70ZSXA CY62136VNLL-70ZSXE Package Diagram Package Type Operating Range Industrial Automotive-A Industrial Automotive-A Automotive-E 51-85087 44-pin TSOP II (Pb-Free) 51-85096 48-Ball (7.00 mm x 7.00 mm) FBGA 51-85087 44-pin TSOP II (Pb-Free) 51-85087 44-pin TSOP II (Pb-Free) 51-85096 48-Ball (7.00 mm x 7.00 mm) FBGA 51-85096 48-Ball (7.00 mm x 7.00 mm) FBGA (Pb-Free) 51-85087 44-pin TSOP II (Pb-Free) 51-85087 44-pin TSOP II (Pb-Free) Please contact your local Cypress sales representative for availability of these parts Package Diagrams 44-pin TSOP II (51-85087) 51-85087-*A Document #: 001-06510 Rev. *A Page 10 of 12 [+] [+] Feedback CY62136VN MoBL® Package Diagrams (continued) 48-Ball (7.00 mm x 7.00 mm) FBGA (51-85096) BOTTOM VIEW PIN 1 CORNER Ø0.05 M C PIN 1 CORNER (LASER MARK) 12 A B C 7.00±0.10 5.25 D E F G H 7.00±0.10 0.75 3 4 5 6 Ø0.25 M C A B Ø0.30±0.05(48X) 6 5 4 3 2 1 A B C D E 2.625 F G H TOP VIEW A A 1.875 0.75 B 7.00±0.10 3.75 B 7.00±0.10 0.53±0.05 0.25 C 0.15(4X) 0.21±0.05 0.10 C 51-85096-*F SEATING PLANE 0.36 C 1.20 MAX. MoBL is a registered trademark, and More Battery Life is a trademark, of Cypress Semiconductor Corporation. All product and company names mentioned in this document are the products of their respective holders. Document #: 001-06510 Rev. *A Page 11 of 12 © Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. [+] [+] Feedback CY62136VN MoBL® Document History Page Document Title: CY62136VN MoBL® 2-Mbit (128K x 16) Static RAM Document Number: 001-06510 REV. ** *A ECN NO. 426503 488954 Issue Date See ECN See ECN Orig. of Change RXU NXR New Data Sheet Added Automotive product Updated ordering Information table Description of Change Document #: 001-06510 Rev. *A Page 12 of 12 [+] [+] Feedback