CY7C09569V-100AXC

25/0251 CY7C09569V CY7C09579V 3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location • Two Flow-Through/Pipelined devices — 16K x 36 organization (CY7C09569V) — 32K x 36 organization (CY7C09579V) • 0.25-micron CMOS for optimum speed/power • Three modes — Flow-Through • 3.3V Low operating power — Active = 250 mA (typical) — Standby = 10 µA (typical) • Fully synchronous interface for ease of use • Burst counters increment addresses internally — Shorten cycle times — Minimize bus noise • • • • • — Pipelined — Burst • Bus-Matching Capabilities on Right Port (x36 to x18 or x9) • Byte-Select Capabilities on Left Port • 100-MHz Pipelined Operation • High-speed clock to data access 5/6/8 ns — Supported in Flow-Through and Pipelined modes Counter Address Read Back via I/O lines Single Chip Enable Automatic power-down Commercial and Industrial Temperature Ranges Compact package — 144-Pin TQFP (20 x 20 x 1.4 mm) — 172-Ball BGA (1.0-mm pitch) (15 x 15 x 0.51 mm) Logic Block Diagram R/WL R/WR OEL Left Port Control Logic B0–B3 CEL Right Port Control Logic OER CER FT/PipeR FT/PipeL BE 9 9 I/O0L–I/O8L 9 I/O9L–I/O17L 9 9 I/O Control I/O Control 9 Bus Match 9/18/36 I/OR I/O18L–I/O26L 9 9 BM SIZE I/O27L–I/O35L [1] A0–A13/14L CLKL ADSL CNTENL CNTRSTL 14/15 14/15 Counter/ Address Register Decode True Dual-Ported RAM Array Counter/ Address Register Decode [1] A0–A13/14R CLKR ADSR CNTENR CNTRSTR Note: 1. A0–A13 for 16K; A0–A14 for 32K devices. For the most recent information, visit the Cypress web site at www.cypress.com Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600 Document #: 38-06054 Rev. *A Revised December 27, 2002 CY7C09569V CY7C09579V Functional Description The CY7C09569V and CY7C09579V are high-speed 3.3V synchronous CMOS 16K and 32K x 36 dual-port static RAMs. Two ports are provided, permitting independent, simultaneous access for reads and writes to any location in memory. Registers on control, address, and data lines allow for minimal setup and hold times. In pipelined output mode, data is registered for decreased cycle time. Clock to data valid tCD2 = 5 ns (pipelined). Flow-through mode can also be used to bypass the pipelined output register to eliminate access latency. In flowthrough mode data will be available tCD1 = 12.5 ns after the address is clocked into the device. Pipelined output or flowthrough mode is selected via the FT/Pipe pin. Each port contains a burst counter on the input address register. The internal write pulse width is independent of the external R/W LOW duration. The internal write pulse is self-timed to allow the shortest possible cycle times. Document #: 38-06054 Rev. *A A HIGH on CE for one clock cycle will power down the internal circuitry to reduce the static power consumption. In the pipelined mode, one cycle is required with CE LOW to reactivate the outputs. Counter Enable Inputs are provided to stall the operation of the address input and utilize the internal address generated by the internal counter for fast interleaved memory applications. A port’s burst counter is loaded with the port’s Address Strobe (ADS). When the port’s Count Enable (CNTEN) is asserted, the address counter will increment on each LOW-to-HIGH transition of that port’s clock signal. This will read/write one word from/into each successive address location until CNTEN is deasserted. The counter can address the entire memory array and will loop back to the start. Counter Reset (CNTRST) is used to reset the burst counter. All parts are available in 144-Pin Thin Quad Plastic Flatpack (TQFP) and 172-Ball Ball Grid Array (BGA) packages. Page 2 of 30 CY7C09569V CY7C09579V Pin Configurations 144-Pin Thin Quad Flatpack (TQFP) I/O33L I/O34L I/O35L A0L A1L A2L A3L A4L A5L A6L A7L B0 B1 B2 B3 OEL R/WL VDD VSS VSS CEL CLKL ADSL CNTRSTL CNTENL FT/PIPEL A8L A9L A10L A11L A12L A13L NC [2] CY7C09569V (16K x 36) CY7C09579V (32K x 36) 108 107 106 105 104 103 102 101 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76 75 74 73 I/O33R I/O34R I/O35R A0R A1R A2R A3R A4R A5R A6R A7R BM SIZE BE vss OER R/WR VDD VSS VSS CER CLKR ADSR CNTRSTR CNTENR FT/PIPER A8R A9R A10R A11R A12R A13R [3] NC I/O26R I/O25R I/O24R I/O8R VDD I/O18R I/O19R I/O20R I/O21R VSS I/O22R I/O23R I/O5R I/O6R I/O7R I/O5L VSS I/O4L I/O3L I/O2L I/O1L I/O0L I/O0R I/O1R I/O2R I/O3R I/O4R VSS I/O21L I/O20L I/O19L I/O18L VDD I/O8L I/O7L I/O6L I/O23L I/O22L VSS 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 I/O26L I/O25L I/O24L 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 144 143 142 141 140 139 138 137 136 135 134 133 132 131 130 129 128 127 126 125 124 123 122 121 120 119 118 117 116 115 114 113 112 111 110 109 I/O32L I/O31L VSS I/O30L I/O29L I/O28L I/O27L VDD I/O17L I/O16L I/O15L I/O14L VSS I/O13L I/O12L I/O11L I/O10L I/O9L I/O9R I/O10R I/O11R I/O12R I/O13R VSS I/O14R I/O15R I/O16R I/O17R VDD I/O27R I/O28R I/O29R I/O30R VSS I/O31R I/O32R Top View Notes: 2. This pin is A14L for CY7C09579V. 3. This pin is A14R for CY7C09579V. Document #: 38-06054 Rev. *A Page 3 of 30 CY7C09569V CY7C09579V Pin Configurations (continued) 172-Ball Ball Grid Array (BGA) Top View 1 A 2 I/O32L I/O30L 3 4 5 6 NC VSS I/O13L VDD B A0L C NC A1L I/O31L I/O27L D A2L A3L I/O35L I/O34L I/O28L I/O16L E A4L A5L NC B0L NC F VDD A6L A7L B1L NC G OEL B2L B3L H VSS R/WL J A9L K 7 9 10 I/O11L I/O11R VDD I/O13R I/O33L I/O29 I/O17L I/O14L I/O12L I/O9L NC 8 12 VSS NC 13 A0R I/O27R I/O31R A1R NC VSS I/O16R I/O28R I/O34R I/O35R A3R A2R NC NC BM NC A5R A4R NC SIZE A7R A6R VDD CEL CER VSS BE OER A8L CLKL CLKR A8R R/WR VSS A10L VSS ADSL NC NC ADSR VSS A10R A9R A11L A12L NC CNTRSTL NC NC CNTRSTR NC A12R A11R L FT/PIPEL A13L CNTENL CNTENR A13R FT/PIPER M NC NC I/O26L I/O25L I/O19L NC[2] I/O22L I/O18L NC NC 14 I/O30R I/O32R I/O9R I/O12R I/O14R I/O17R I/O29R I/O33R I/O15L I/O10L I/O10R I/O15R VSS 11 NC VSS VSS I/O19R I/O25R I/O26R NC I/O7L I/O2L I/O2R I/O7R NC I/O18R I/O22R NC[3] NC N I/O24L I/O20L I/O8L I/O6L I/O5L I/O3L I/O0L I/O0R I/3R I/O5R I/O6R I/O8R I/O20R I/O24R P I/O23L I/O21L VSS I/O4L VDD I/O1L I/O1R VDD I/O4R Document #: 38-06054 Rev. *A NC VSS NC I/O21R I/O23R Page 4 of 30 CY7C09569V CY7C09579V Selection Guide CY7C09569V CY7C09579V -100 CY7C09569V CY7C09579V -83 CY7C09569V CY7C09579V -67 100 83 67 5 6 8 Typical Operating Current ICC (mA) 250 240 230 Typical Standby Current for ISB1 (mA) (Both Ports TTL Level) 30 25 25 Typical Standby Current for ISB3 (µA) (Both Ports CMOS Level) 10 µA 10 µA 10 µA fMAX2 (MHz) (Pipelined) Max. Access Time (ns) (Clock to Data, Pipelined) Pin Definitions Left Port Right Port A0L–A13/14L A0R–A13/14R Address Inputs (A0–A13 for 16K, A0–A14 for 32K devices). ADSL ADSR Address Strobe Input. Used as an address qualifier. This signal should be asserted LOW to assert the part using the externally supplied address on Address Pins. To load this address into the Burst Address Counter both ADS and CNTEN have to be LOW. ADS is disabled if CNTRST is asserted LOW CEL CER Chip Enable Input. CLKL CLKR Clock Signal. This input can be free-running or strobed. Maximum clock input rate is fMAX. CNTENL CNTENR Counter Enable Input. Asserting this signal LOW increments the burst address counter of its respective port on each rising edge of CLK. CNTEN is disabled if CNTRST is asserted LOW. CNTRSTL CNTRSTR Counter Reset Input. Asserting this signal LOW resets the burst address counter of its respective port to zero. CNTRST is not disabled by asserting ADS or CNTEN. I/O0L–I/O35L I/O0R–I/O35R Data Bus Input/Output. OEL OER Output Enable Input. This signal must be asserted LOW to enable the I/O data pins during read operations. R/WL R/WR Read/Write Enable Input. This signal is asserted LOW to write to the dual port memory array. For read operations, assert this pin HIGH. FT/PIPEL FT/PIPER Flow-Through/Pipelined Select Input. For flow-through mode operation, assert this pin LOW. For pipelined mode operation, assert this pin HIGH. B0L–B3L Description Byte Select Inputs. Asserting these signals enable read and write operations to the corresponding bytes of the memory array. BM, SIZE Select Pins for Bus Matching. See Bus Matching for details. BE Big Endian Pin. See Bus Matching for details. VSS Ground Input. VDD Power Input. Document #: 38-06054 Rev. *A Page 5 of 30 CY7C09569V CY7C09579V Maximum Ratings [4] Output Current into Outputs (LOW)............................. 20 mA (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied.............................................–55°C to +125°C Supply Voltage to Ground Potential ............... –0.5V to +4.6V DC Voltage Applied to Outputs in High Z State ...........................–0.5V to VDD+0.5V Static Discharge Voltage ........................................... >2001V Latch-Up Current..................................................... >200 mA Operating Range Range Commercial Industrial Ambient Temperature VDD 0°C to +70°C 3.3V ± 165 mV –40°C to +85°C 3.3V ± 165 mV DC Input Voltage...................................–0.5V to VDD+0.5V[5] Electrical Characteristics Over the Operating Range CY7C09569V CY7C09579V -100 Parameter Description VOH Output HIGH Voltage (VDD = Min., IOH = –4.0 mA) VOL Output LOW Voltage (VDD = Min., IOL= +4.0 mA) VIH Input HIGH Voltage VIL Input LOW Voltage IOZ Output Leakage Current ICC Operating Current (VDD = Max., IOUT = 0 mA) Outputs Disabled ISB1 ISB2 ISB3 ISB4 -83 -67 Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Unit 2.4 2.4 2.4 0.4 2.0 0.4 2.0 Commercial 10 250 385 Industrial Standby Current (Both Ports TTL Commercial Level) CEL & CER ≥ VIH, f = fMAX Industrial 30 Standby Current (One Port TTL Level) CEL | CER ≥ VIH, f = fMAX Commercial 170 Standby Current (Both Ports CMOS Level) CEL & CER ≥ VDD – 0.2V, f = 0 Commercial Standby Current (One Port CMOS Level) CEL | CER ≥ VIH, f = fMAX Commercial 75 220 Industrial 0.01 1 Industrial 150 200 Industrial 0.4 2.0 0.8 –10 V V 0.8 –10 10 240 360 270 385 25 70 35 85 160 210 170 235 0.01 1 0.01 1 140 190 150 200 V –10 230 0.8 V 10 µA 340 mA mA 25 65 mA mA 150 200 mA mA 0.01 1 mA mA 130 180 mA mA Capacitance Parameter Description CIN Input Capacitance COUT Output Capacitance Test Conditions TA = 25°C, f = 1 MHz, VDD = 3.3V Max. Unit 10 pF 10 pF Note: 4. The voltage on any input or I/O pin can not exceed the power pin during power-up. 5. Pulse width < 20 ns. Document #: 38-06054 Rev. *A Page 6 of 30 CY7C09569V CY7C09579V AC Test Load and Waveforms Z0 = 50Ω 3.3V R = 50Ω OUTPUT R1 = 590Ω C [6] OUTPUT VTH = 1.5V C = 5 pF (b) Three-State Delay (Load 2) (a) Normal Load (Load 1) 3.0V ALL INPUT PULSES R2 = 435Ω VSS 10% 90% 10% 90% ≤ 3 ns ≤ 3 ns 7 6 ∆ for tCD2 (ns) 5 4 3 2 1 20[7] 30 60 80 100 200 Capacitance (pF) (b) Load Derating Curve Notes: 6. External AC Test Load Capacitance = 10 pF. 7. (Internal I/O pad Capacitance = 10 pF) + AC Test Load. Document #: 38-06054 Rev. *A Page 7 of 30 CY7C09569V CY7C09579V Switching Characteristics Over the Operating Range CY7C09569V CY7C09579V -100 Parameter Description Min. -83 Max. Min. -67 Max. Unit fMAX1 fMax Flow-Through 67 Max. 45 Min. 40 MHz fMAX2 fMax Pipelined 100 83 67 MHz tCYC1 Clock Cycle Time - Flow-Through 15 22 25 ns tCYC2 Clock Cycle Time - Pipelined 10 12 15 ns tCH1 Clock HIGH Time - Flow-Through 6.5 7.5 8.5 ns tCL1 Clock LOW Time - Flow-Through 6.5 7.5 8.5 ns tCH2 Clock HIGH Time - Pipelined 4 5 6.5 ns tCL2 Clock LOW Time - Pipelined 4 5 6.5 ns tR Clock Rise Time tF Clock Fall Time tSA Address Set-Up Time 3.5 4 4 ns tHA Address Hold Time 0.5 0.5 0.5 ns tSB Byte Select Set-Up Time 3.5 4 4 ns tHB Byte Select Hold Time 0.5 0.5 0.5 ns tSC Chip Enable Set-Up Time 3.5 4 4 ns tHC Chip Enable Hold Time 0.5 0.5 0.5 ns tSW R/W Set-Up Time 3.5 4 4 ns tHW R/W Hold Time 0.5 0.5 0.5 ns tSD Input Data Set-Up Time 3.5 4 4 ns tHD Input Data Hold Time 0.5 0.5 0.5 ns tSAD ADS Set-Up Time 3.5 4 4 ns tHAD ADS Hold Time 0.5 0.5 0.5 ns tSCN CNTEN Set-Up Time 3.5 4 4 ns tHCN CNTEN Hold Time 0.5 0.5 0.5 ns tSRST CNTRST Set-Up Time 3.5 4 4 ns tHRST CNTRST Hold Time 0.5 0.5 0.5 ns tOE Output Enable to Data Valid tOLZ 3 3 3 8 [8, 9] OE to Low Z 2 [8, 9] OE to High Z 1 tOHZ 3 tCD1 Clock to Data Valid - Flow-Through tCD2 Clock to Data Valid - Pipelined tCA1 Clock to Counter Address Valid Flow-Through tCA2 Clock to Counter Address Valid - Pipelined tDC Data Output Hold After Clock HIGH 2 tCKHZ[8, 9] Clock HIGH to Output High Z 2 tCKLZ[8, 9] Clock HIGH to Output Low Z 2 9 2 7 1 3 ns 3 ns 10 2 7 ns 7 ns 12.5 18 20 ns 5 6 8 ns 12.5 18 20 ns 9 10 11 ns 8 ns 2 6 2 2 1 ns 2 7 2 2 ns ns Notes: 8. This parameter is guaranteed by design, but it is not production tested. 9. Test conditions used are Load 2. Document #: 38-06054 Rev. *A Page 8 of 30 CY7C09569V CY7C09579V Switching Characteristics Over the Operating Range (continued) CY7C09569V CY7C09579V -100 Parameter Description Min. -83 Max. Min. -67 Max. Min. Max. Unit Port to Port Delays tCWDD Write Port Clock HIGH to Read Data Delay 30 35 35 ns tCCS Clock to Clock Set-Up Time 9 10 12 ns Document #: 38-06054 Rev. *A Page 9 of 30 CY7C09569V CY7C09579V Switching Waveforms Read Cycle for Flow-Through Output (FT/PIPE = VIL)[10, 11, 12, 13] tCH1 tCYC1 tCL1 CLK CE tSC tHC tSW tSA tHW tHA tSB tSC tHB tHC B0-3 R/W An ADDRESS An+1 An+2 An+3 tCKHZ tDC tCD1 DATAOUT Qn Qn+1 Qn+2 tDC tCKLZ tOHZ tOLZ OE tOE Read Cycle for Pipelined Operation (FT/PIPE = VIH)[10, 11, 12, 13] tCH2 tCYC2 tCL2 CLK CE tSC tHC tSW tSA tHW tHA tSC tSB tHC tHB B0-3 R/W ADDRESS An DATAOUT An+1 1 Latency An+2 tDC tCD2 Qn tCKLZ An+3 Qn+1 tOHZ Qn+2 tOLZ OE tOE Notes: 10. OE is asynchronously controlled; all other inputs are synchronous to the rising clock edge. 11. ADS = VIL, CNTEN = VIL and CNTRST = VIH. 12. The output is disabled (high-impedance state) by CE=VIH following the next rising edge of the clock. 13. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK. Numbers are for reference only. Document #: 38-06054 Rev. *A Page 10 of 30 CY7C09569V CY7C09579V Switching Waveforms (continued) Bus Match Read Cycle for Flow-Through Output (FT/PIPE = VIL)[10, 12, 14, 15, 16] tCYC1 tCH1 tCL1 CLK CE tSC tHC tSW tSA tHW tHA ADS R/W An ADDRESS An tCD1 DATAOUT tCKLZ OE An+1 An+1 tDC Qn Qn Qn+1 Qn+1 1st Cycle 2nd Cycle 1st Cycle 2nd Cycle tDC LOW Bus Match Read Cycle for Pipelined Operation (FT/PIPE = VIH)[10, 12, 14, 15, 16] tCYC2 tCH2 tCL2 CLK CE tHC tSC R/W tSW tHW ADS ADDRESS An An+1 An tSA tHA tCD2 tCD2 tCD2 tCLKZ DATAOUT Qn Qn 1 Latency OE An+1 LOW tDC 1st Cycle Qn+1 tDC 2nd Cycle tDC 1st Cycle Notes: 14. Timing shown is for x18 bus matching; x9 bus matching is similar with 4 cycles between address inputs. 15. See table “Right Port Operation“for data output on first and subsequent cycles. 16. CNTEN = VIL. In x9 and x18 Bus Matching Burst Mode operations (Write or Read), ADS can toggle on the rising edge of every clock cycle or it can be at VIH level all the time except when loading the initial external address (i.e. ADS = VIL only required when reading or writing the first Byte or Word). Document #: 38-06054 Rev. *A Page 11 of 30 CY7C09569V CY7C09579V Switching Waveforms (continued) Bank Select Pipelined Read[17, 18] tCYC2 tCH2 tCL2 CLKL tHA tSA ADDRESS(B1) A0 A1 A3 A2 A4 A5 tHC tSC CE(B1) tCD2 tHC tSC tCD2 tHA tSA tDC A0 ADDRESS(B2) A1 tDC tSC tCKLZ A3 A2 tCKHZ Q3 Q1 Q0 DATAOUT(B1) tCD2 tCKHZ A4 A5 tHC CE(B2) tSC tCD2 tHC DATAOUT(B2) tCKHZ tCD2 Q4 Q2 tCKLZ tCKLZ Left Port Write to Flow-Through Right Port Read[18, 19, 20, 21, 22] CLKL tSW tHW tSA tHA R/WL ADDRESSL NO MATCH MATCH tHD tSD DATAINL VALID tCCS CLKR R/WR tCD1 tSW tSA ADDRESSR tHW tHA NO MATCH MATCH tCWDD DATAOUTR tCD1 VALID tDC VALID tDC Notes: 17. In this depth expansion example, B1 represents Bank #1 and B2 is Bank #2; Each Bank consists of one Cypress dual-port device from this data sheet. ADDRESS(B1) = ADDRESS(B2). 18. B0 = B1 = B2 = B3 = BM = SIZE = ADS = CNTEN = VIL, CNTRST = VIH. 19. The same waveforms apply for a right port write to flow-through left port read. 20. CE = B0 = B1 = B2 = B3 = ADS = CNTEN=VIL; CNTRST= VIH. 21. OE = VIL for the right port, which is being read from. OE = VIH for the left port, which is being written to. 22. If tCCS ≤ maximum specified, then data from right port READ is not valid until the maximum specified for tCWDD. If tCCS>maximum specified, then data is not valid until tCCS + tCD1 (tCWDD does not apply in this case). Document #: 38-06054 Rev. *A Page 12 of 30 CY7C09569V CY7C09579V Switching Waveforms (continued) Pipelined Read-to-Write-to-Read (OE = VIL)[13, 23, 24, 25] tCH2 tCYC2 tCL2 CLK CE tSC tHC tSW tHW R/W tSW tHW An ADDRESS tSA An+1 An+2 An+3 An+4 tSD tHD tHA DATAIN An+2 tCD2 tCKHZ Dn+2 tCD2 tCKLZ Qn DATAOUT READ Qn+3 NO OPERATION WRITE READ Notes: 23. Output state (HIGH, LOW, or High-Impedance) is determined by the previous cycle control signals. 24. CE = ADS = CNTEN = VIL; CNTRST = VIH. 25. During “No Operation,” data in memory at the selected address may be corrupted and should be rewritten to ensure data integrity. Document #: 38-06054 Rev. *A Page 13 of 30 CY7C09569V CY7C09579V Switching Waveforms (continued) Pipelined Read-to-Write-to-Read (OE Controlled)[11, 23, 24, 25] tCH2 tCYC2 tCL2 CLK CE tSC tHC tSW tHW R/W tSW tHW An An+1 An+2 An+3 An+4 An+5 ADDRESS tSA tHA tSD tHD Dn+2 DATAIN Dn+3 tCD2 DATAOUT tCKLZ tCD2 Qn Qn+4 tOHZ OE READ Document #: 38-06054 Rev. *A WRITE READ Page 14 of 30 CY7C09569V CY7C09579V Switching Waveforms (continued) Bus Match Pipelined Read-to-Write-to-Read (OE = VIL)[11, 14, 15, 16, 24, 25, 26] tCYC2 CLK tCH2 tCL2 CE tSC tHC tSW tHW R/W ADDRESS tSA An+1 An An An+2 An+1 An+3 An+2 An+4 An+3 An+4 tHA ADS 1st Word 1st Word 2nd Word Qn+3 Qn+3 Qn Qn DATAOUT tCKLZ 2nd Word tCKHZ tCD2 tCD2 1st Word 2nd Word Dn+2 Dn+2 DATAIN READ READ 1st Cycle READ 2nd Cycle tSD tHD No Operation WRITE WRITE 1st Cycle 2nd Cycle tCD2 READ READ 1st Cycle tDC READ 2nd Cycle Note: 26. BM, SIZE, and BE must be reconfigured 1 cycle before operation is guaranteed. BM, SIZE, and BE should remain static for any particular port configuration. Document #: 38-06054 Rev. *A Page 15 of 30 CY7C09569V CY7C09579V Switching Waveforms (continued) Flow-Through Read-to-Write-to-Read (OE = VIL)[11, 13, 14, 15, 24, 25] tCH1 tCYC1 tCL1 CLK CE tSW tHW R/W tSW tHW An ADDRESS An+1 tSA DATAIN An+2 An+2 tSD tHA An+3 tHD Dn+2 tCD1 tCD1 DATAOUT An+4 tCD1 Qn Qn+1 tDC tCKHZ READ tCD1 Qn+3 tCKLZ NO OPERATION WRITE tDC READ Flow-Through Read-to-Write-to-Read (OE Controlled)[11, 13, 23, 24, 25] tCH1 tCYC1 tCL1 CLK CE tSW tHW R/W tSW tHW An An+1 An+2 An+3 An+4 An+5 ADDRESS tSA DATAIN tSD tHA DATAOUT Dn+2 tDC tCD1 tHD Dn+3 tOE tCD1 Qn tCD1 Qn+4 tOHZ tCKLZ tDC OE READ Document #: 38-06054 Rev. *A WRITE READ Page 16 of 30 CY7C09569V CY7C09579V Switching Waveforms (continued) Bus Match Flow-Through Read-to-Write-to-Read (OE = VIL)[11, 14, 15, 16, 24, 25, 26] tCYC1 tCH1 tCL1 CLK tSC tHC CE tSW tHW tSW tHW R/W tSA ADDRESS tHA An An An+1 An+1 An+1 An+1 An+2 An+1 ADS tSD DATAIN Dn+1 tCD1 tCKHZ tDC tCD1 Qn DATAOUT Document #: 38-06054 Rev. *A Dn+1 1st Word 2nd Word tCD1 tCD1 2nd Word READ 2nd Cycle Qn+1 Qn+1 Qn 1st Word READ 1st Cycle tHD No Operation WRITE 1st Cycle WRITE 2nd Cycle tCKLZ tDC READ 1st Cycle READ 2nd Cycle Page 17 of 30 CY7C09569V CY7C09579V Switching Waveforms (continued) Pipelined Read with Address Counter Advance[27] tCH2 tCYC2 tCL2 CLK tSA ADDRESS tHA An tSAD tHAD ADS tSAD tHAD tSCN tHCN CNTEN tSCN DATAOUT tHCN Qx–1 tCD2 Qx READ EXTERNAL ADDRESS Qn tDC READ WITH COUNTER Qn+1 Qn+2 COUNTER HOLD Qn+3 READ WITH COUNTER Flow-Through Read with Address Counter Advance[27] tCH1 tCYC1 tCL1 CLK tSA tHA An ADDRESS tSAD tHAD ADS tSAD tHAD tSCN tHCN CNTEN tSCN DATAOUT tHCN tCD1 Qx Qn Qn+1 tDC READ EXTERNAL ADDRESS Qn+2 Qn+3 Qn+4 COUNTER HOLD READ WITH COUNTER tDC tCD1 READ tDC WITH tCD1 COUNTER Note: 27. CE = OE = VIL; R/W = CNTRST = VIH. Document #: 38-06054 Rev. *A Page 18 of 30 CY7C09569V CY7C09579V Switching Waveforms (continued) Write with Address Counter Advance (Flow-Through or Pipelined Outputs)[28, 29] tCH2 tCYC2 tCL2 CLK tSA tHA An ADDRESS INTERNAL ADDRESS An tSAD tHAD tSCN tHCN An+1 An+2 An+3 An+4 ADS CNTEN Dn DATAIN tSD tHD WRITE EXTERNAL ADDRESS Dn+1 Dn+1 WRITE WITH COUNTER Dn+2 WRITE COUNTER HOLD Dn+3 Dn+4 WRITE WITH COUNTER Notes: 28. CE= B0 = B1 = B2 = B3 = R/W = VIL; CNTRST = VIH. 29. The “Internal Address” is equal to the “External Address” when ADS = CNTEN = VILand CNTRST=VIH. Document #: 38-06054 Rev. *A Page 19 of 30 CY7C09569V CY7C09579V Switching Waveforms (continued) Counter Reset (Pipelined Outputs)[11, 23, 30, 31, 32] tCYC2 tCH2 tCL2 CLK tSA INTERNAL ADDRESS Ax tSW An 1 0 Ap Am An ADDRESS tHA Ap Am tHW R/W ADS CNTEN tSRST tHRST CNTRST tSD tHD DATAIN D0 tCD2 tCD2 [32] DATAOUT Q0 Qn Q1 tCKLZ COUNTER RESET WRITE ADDRESS 0 READ ADDRESS 0 READ ADDRESS 1 READ ADDRESS An READ ADDRESS Am Notes: 30. CE = B0 = B1 = B2 = B3 = VIL. 31. No dead cycle exists during counter reset. A READ or WRITE cycle may be coincidental with the counter reset. 32. Output state (HIGH, LOW, or High-Impedance) is determined by the previous cycle control signals. Ideally, DATAOUT should be in the High-Impedance state during a valid WRITE cycle. Document #: 38-06054 Rev. *A Page 20 of 30 CY7C09569V CY7C09579V Switching Waveforms (continued) Counter Reset (Flow-Through Outputs)[23, 25, 30, 31, 32] tCH2 tCYC2 tCL2 CLK tSA An ADDRESS INTERNAL ADDRESS tHA AX 0 tSW tHW tSD tHD An+1 An 1 An+1 R/W ADS CNTEN tSRST tHRST CNTRST D0 DATAIN tCD1 DATAOUT Q0 COUNTER RESET Document #: 38-06054 Rev. *A WRITE ADDRESS 0 READ ADDRESS 0 Qn Q1 READ ADDRESS 1 READ ADDRESS n Page 21 of 30 CY7C09569V CY7C09579V Switching Waveforms (continued) Pipelined Read of State of Address Counter [33, 34, 35] tCYC2 tCH2 tCL2 CLK tSA tHA ADDRESS An INTERNAL ADDRESS An An+2 An+1 tSAD tHAD ADS tSAD tSCN tHCN tHAD CNTEN tSCN tHCN DATAOUT Qx-1 Qx-2 LOAD EXTERNAL ADDRESS tSCN tHCN tCA2 Qn An READ WITH COUNTER tDC READ COUNTER ADDRESS Flow-Through Read of State of Address Counter Qn+1 COUNTER HOLD Qn+2 READ WITH COUNTER [33, 34, 36] tCYC1 tCH1 tCL1 CLK tSA tHA ADDRESS An INTERNAL ADDRESS An An+1 An+3 An+2 tSAD tHAD ADS tSCN tHCN tSCN tSAD tHCN tHAD CNTEN tCA1 DATAOUT Qn Qx tSCN An tDC LOAD EXTERNAL ADDRESS READ COUNTER ADDRESS Qn+1 Qn+2 tHCN Qn+3 READ WITH COUNTER COUNTER HOLD READ WITH COUNTER Notes: 33. CE = OE = VIL; R/W = CNTRST = VIH. 34. When reading ADDRESSOUT in x9 Bus Match mode, readout of AN is extended by 1 cycle. 35. For Pipelined address counter read, signals from address counter operation table from must be valid for 2 consecutive cycles for x36 and x18 mode and for 3 consecutive cycles for x9 mode. 36. For flow-through address counter read, signals from address counter operation table must be valid for consecutive cycles for x36. Document #: 38-06054 Rev. *A Page 22 of 30 CY7C09569V CY7C09579V Read/Write and Enable Operation[37, 38, 39] Inputs OE CLK Outputs CE R/W I/O0–I/O35 X H X High-Z X L L DIN L L H DOUT Read[40] L X High-Z Outputs Disabled H X Operation Deselected[40] Write Address Counter Control Operation[37, 41] Address Previous Address X CLK OE R/W ADS CNTEN CNTRST Mode Operation X X X X X L Reset Counter Reset An X X X L L H Load Address Load into Counter An An L H L H H Hold + Read External Address Blocked Counter Address Readout X An X X H H H Hold External Address Blocked Counter Disabled X An X X H L H Increment Counter Increment Notes: 37. “X” = “Don’t Care,” “H” = VIH, “L” = VIL. 38. ADS, CNTEN, CNTRST = “Don’t Care.” 39. OE is an asynchronous input signal. 40. When CE changes state In the pipelined mode, deselection and read happen in the following clock cycle. 41. Counter operation is independent of CE. Document #: 38-06054 Rev. *A Page 23 of 30 CY7C09569V CY7C09579V Right Port Configuration[26, 42] BM SIZE Configuration I/O Pins used 0 0 x36 I/O0R–35R 1 0 x18 I/O0R–17R 1 1 x9 I/O0R–8R Right Port Operation[43] Configuration BE Data on 1st Cycle Data on 2nd Cycle Data on 3rd Cycle Data on 4th Cycle x18 0 DQ0R–17R DQ18R–35R - - x18 1 DQ18R–35R DQ0R–17R - - x9 0 DQ0R–8R DQ9R–17R DQ18R–26R DQ27R–35R x9 1 DQ27R–35R DQ18R–26R DQ9R–17R DQ0R–8R Readout of Internal Address Counter[44] Configuration Address on 1st Cycle I/O Pins used on 1st Cycle Address on 2nd Cycle I/O Pins used on 2nd Cycle Left Port x36 A0L–14L I/O3L–17L - - Right Port x36 A0R–14R I/O3R–17R - - Right Port x18 WA, A0R–14R I/O2R–17R - - Right Port x9 A6R–14R I/O0R–8R BA, WA, A0R–5R I/O1R–8R Left Port Operation Control Pin Effect B0 I/O0–8 Byte Control B1 I/O9–17 Byte Control B2 I/O18–26 Byte Control B3 I/O27–35 Byte Control Notes: 42. In x36 mode, BE input is a “Don’t Care.” 43. DQ represents data output of the chip. 44. x18 and x9 configuration apply to right port only. Document #: 38-06054 Rev. *A Page 24 of 30 CY7C09569V CY7C09579V The CY7C09569V/09579V Dual-Port RAM (DPRAM) contains on-chip address counters (one for each port) for the synchronous members of the product family. Besides the main x36 format, the right port allows bus matching (x18 or x9, userselectable). An internal sub-counter provides the extra addresses required to sequence out the 36-bit word in 18-bit or 9-bit increments. The sub-counter counts up in the “Little Endian” mode, and counts down if the user has chosen the “Big Endian” mode. The address counter is required to be in increment mode in order for the sub-counter to sequence out the second word (in x18 mode) or the remaining three bytes (in x9 mode). word, or 9-bit byte format for data I/O. The data lines are divided into four lanes, each consisting of 9 bits (byte-size data lines). BE x36 / CY7C09569V CY7C09579V 16K/32Kx36 Dual Port 9 / 9 / 9 / US MODE Counter Operation x9, x18, x36 / 9 / For a x36 format (the only active format on the left port), each address counter in the CY7C09579V uses addresses (A0–14). BM SIZE For the right port (allowing for the bus-matching feature), a maximum of two address bits (out of a 2-bit sub-counter) are added. Figure 2. Bus Match Operation Diagram 1. ADSL/R (pin #23/86) is a port’s address strobe, allowing the loading of that port’s burst counters if the corresponding CNTENL/R pin is active as well. The Bus Match Select (BM) pin works with Bus Size Select (SIZE) and Big Endian Select (BE) to select the bus width (long-word, word, or byte) and data sequencing arrangement for the right port of the dual-port device. A logic “0” applied to both the Bus Match Select (BM) pin and to the Bus Size Select (SIZE) pin will select long-word (36-bit) operation. A logic “1” level applied to the Bus Match Select (BM) pin will enable whether byte or word bus width operation on the right port I/Os depending on the logic level applied to the SIZE pin. The level of Bus Match Select (BM) must be static throughout normal device operation. 2. CNTENL/R (pin #25/84) is a port’s count enable, provided to stall the operation of the address input and utilize the internal address generated by the internal counter for fast interleaved memory applications; when asserted, the address counter will increment on each positive transition of that port’s clock signal. 3. CNTRSTL/R (pin #24/85) is a port’s burst counter reset. Address Read-Back A new read-back (Hold+Read Mode) feature has been added, which is different between the left and right port due to the bus matching feature provided only for the right port. In read-back mode the internal address of the counter will be read from the data I/Os as shown in Figure 1. _______ ______________ CY7C09569V CY7C09579V RAM ARRAY ____________ Figure 1. Counter Operation Diagram Bus Match Operation The right port of the CY7C09569V/09579V 16K/32Kx36 dualport SRAM can be configured in a 36-bit long-word, 18-bit The Bus Size Select (SIZE) pin selects either a byte or word data arrangement on the right port when the Bus Match Select (BM) pin is HIGH. A logic “1” on the SIZE pin when the BM pin is HIGH selects a byte bus (9-bit) data arrangement. A logic “0” on the SIZE pin when the BM pin is HIGH selects a word bus (18-bit) data arrangement. The level of the Bus Size Select (SIZE) must also be static throughout normal device operation. The Big Endian Select (BE) pin is a multiple-function pin during word or byte bus selection (BM = 1). BE is used in Big Endian Select mode to determine the order by which bytes (or words) of data are transferred through the right data port. A logic “0” on the BE pin will select Little Endian data sequencing arrangement and a logic “1” on the BE pin will select a Big Endian data sequencing arrangement. Under these circumstances, the level on the BE pin should be static throughout dualport operation. Long-Word (36-bit) Operation Bus Match Select (BM) and Bus Size Select (SIZE) set to a logic “0” will enable standard cycle long-word (36-bit) operation. In this mode, the right port’s I/O operates essentially in an identical fashion to the left port of the dual-port SRAM. However no Byte Select control is available. All 36 bits of the longword are shifted into and out of the right port’s I/O buffer stages. All read and write timing parameters may be identical with respect to the two data ports. When the right port is configured for a long-word size, Big- Endian Select (BE) pin has no application and their inputs are “Don’t Care”[45] for the external user. Note: 45. Even though a logic level applied to a “Don’t Care” input will not change the logical operation of the dual-port, inputs that are temporarily a “Don’t Care” (along with unused inputs) must not be allowed to float. They must be forced either HIGH or LOW. Document #: 38-06054 Rev. *A Page 25 of 30 CY7C09569V CY7C09579V Word (18-bit) Operation Word (18-bit) bus sizing operation is enabled when Bus Match Select (BM) is set to a logic “1” and the Bus Size Select (SIZE) pin is set to a logic “0.” In this mode, 18 bits of data are ported through I/O0R–17R. The level applied to the Big Endian (BE) pin determines the right port data I/O sequencing order (Big Endian or Little Endian). During word (18-bit) bus size operation, a logic LOW applied to the BE pin will select Little Endian operation. In this case, the least significant data word is read from the right port first or written to the right port first. A logic “1” on the BE pin during word (18-bit) bus size operation will select Big Endian operation resulting in the most significant data word being transferred through the right port first. Internally, the data will be stored in the appropriate 36-bit LSB or MSB I/O memory location. Device operation requires a minimum of two clock cycles to read or write during word (18-bit) bus size operation. An internal sub-counter automatically increments the right port multiplexer control when Little or Big Endian operation is in effect. pin is set to a logic “1.” In this mode, 9 bits of data are ported through I/O0R–8R. Big Endian and Little Endian data sequencing is available for dual-port operation. The level applied to the Big Endian pin (BE) under these circumstances will determine the right port data I/O sequencing order (Big or Little Endian). A logic LOW applied to the BE pin during byte (9-bit) bus size operation will select Little Endian operation. In this case, the least significant data byte is read from the right port first or written to the right port first. A logic “1” on the BE pin during byte (9-bit) bus size operation will select Big Endian operation resulting in the most significant data word to be transferred through the right port first. Internally, the data will be stored in the appropriate 36-bit LSB or MSB I/O memory location. Device operation requires a minimum of four clock cycles to read or write during byte (9bit) bus size operation. An internal sub-counter automatically increments the right port multiplexer control when Little or Big Endian operation is in effect. When transferring data in byte (9bit) bus match format, the unused I/O pins (I/O9RQ–35R) are three-stated. Byte (9-bit) Operation Byte (9-bit) bus sizing operation is enabled when Bus Match Select (BM) is set to a logic “1” and the Bus Size Select (SIZE) Document #: 38-06054 Rev. *A Page 26 of 30 CY7C09569V CY7C09579V Ordering Information 16K x36 3.3V Synchronous Dual-Port SRAM Speed (MHz) Ordering Code 100 CY7C09569V-100AC 83 CY7C09569V-83AC CY7C09569V-100BBC CY7C09569V-83BBC 67 CY7C09569V-67AC CY7C09569V-67BBC Package Name A144 BB172 A144 BB172 A144 BB172 Package Type 144-Pin Thin Quad Flat Pack Operating Range Commercial 172-Ball Ball Grid Array (BGA) Commercial 144-Pin Thin Quad Flat Pack Commercial 172-Ball Ball Grid Array (BGA) Commercial 144-Pin Thin Quad Flat Pack Commercial 172-Ball Ball Grid Array (BGA) Commercial 32K x36 3.3V Synchronous Dual-Port SRAM Speed (MHz) 100 Ordering Code CY7C09579V-100AC CY7C09579V-100BBC 83 67 Package Name A144 BB172 Package Type Operating Range 144-Pin Thin Quad Flat Pack Commercial 172-Ball Ball Grid Array (BGA) Commercial CY7C09579V-83AC A144 144-Pin Thin Quad Flat Pack Commercial CY7C09579V-83AI A144 144-Pin Thin Quad Flat Pack Industrial CY7C09579V-83BBC BB172 172-Ball Ball Grid Array (BGA) Commercial CY7C09579V-83BBI BB172 172-Ball Ball Grid Array (BGA) Industrial 144-Pin Thin Quad Flat Pack Commercial 172-Ball Ball Grid Array (BGA) Commercial CY7C09579V-67AC CY7C09579V-67BBC Document #: 38-06054 Rev. *A A144 BB172 Page 27 of 30 CY7C09569V CY7C09579V Package Diagrams 144-Pin Plastic Thin Quad Flat Pack (TQFP) A144 51-85047-A Document #: 38-06054 Rev. *A Page 28 of 30 CY7C09569V CY7C09579V Package Diagrams (continued) 172-Ball BGA BB172 51-85114 Document #: 38-06054 Rev. *A Page 29 of 30 © Cypress Semiconductor Corporation, 2001. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. CY7C09569V CY7C09579V Document Title: CY7C09569V/CY7C09579V 3.3 16K/ 32K x 36 FLEx36™ Synchronous Dual-Port Static RAM Document Number: 38-06054 ECN NO. Issue Date Orig. of Change ** 110213 12/16/01 SZV Change from Spec number: 38-00743 to 38-06054 *A 122304 12/27/02 RBI Power up requirements added to Maximum Ratings Information REV. Document #: 38-06054 Rev. *A Description of Change Page 30 of 30