CY7C1011BV33-12ZC

CY7C1011BV33 128K x 16 Static RAM Features • 3.0 – 3.6V Operation • High speed — tAA = 12, 15 ns • CMOS for optimum speed/power • Low active power — 684 mW (Max.) • Automatic power-down when deselected • Independent control of upper and lower bits • Available in 44-pin TSOP II (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0 through A15). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O9 through I/O16) is written into the location specified on the address pins (A0 through A16). Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O1 to I/O8. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O9 to I/O16. See the truth table at the back of this data sheet for a complete description of read and write modes. The input/output pins (I/O1 through I/O16) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). The CY7C1011BV33 is available in standard 44-pin TSOP Type II package. Functional Description The CY7C1011BV33 is a high-performance CMOS static RAM organized as 131,072 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable Logic Block Diagram DATA IN DRIVERS A7 A6 A5 A4 A3 A2 A1 A0 ROW DECODER 128K x 16 RAM Array 512 X 2048 SENSE AMPS I/O1–I/O8 I/O9–I/O16 COLUMN DECODER BHE WE CE OE BLE 1011B-1 Cypress Semiconductor Corporation Document #: 38-05021 Rev. *A A8 A9 A10 A11 A12 A13 A14 A15 A16 • 3901 North First Street • San Jose • CA 95134 • 408-943-2600 Revised June 6, 2001 CY7C1011BV33 Pin Configuration TSOP II Top View A4 A3 A2 A1 A0 CE I/O1 I/O2 I/O3 I/O4 VCC VSS I/O5 I/O6 I/O7 I/O8 WE A16 A15 A14 A13 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE BHE BLE I/O16 I/O15 I/O14 I/O13 VSS VCC I/O12 I/O11 I/O10 I/O9 NC A8 A9 A10 A11 NC 1011B-2 Selection Guide 1011BV33-12 Maximum Access Time (ns) Maximum Operating Current (mA) Maximum CMOS Standby Current (mA) Commercial Commercial Commercial 12 190 10 1011BV33-15 15 170 10 Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage on VCC to Relative GND[1] .... –0.5V to +7.0V DC Voltage Applied to Outputs in High Z State[1] ...................................... –0.5V to VCC+0.5V DC Input Voltage[1] .................................. –0.5V to VCC+0.5V Current into Outputs (LOW) ........................................ 20 mA Static Discharge Voltage ........................................... >2001V (per MIL-STD-883, Method 3015) Latch-Up Current..................................................... >200 mA Operating Range Range Commercial Industrial Ambient Temperature[2] 0°C to +70°C –40°C to +85°C VCC 3.3V ± 10% 3.3V ± 10% Electrical Characteristics Over the Operating Range Parameter VOH VOL Description Test Conditions 1011BV33-12 Min. 2.4 0.4 Max. 1011BV33-15 Min. 2.4 0.4 Max. Unit V V Output HIGH Voltage VCC = Min., IOH = –4.0 mA Output LOW Voltage VCC = Min., IOL = 8.0 mA Document #: 38-05021 Rev. *A Page 2 of 10 CY7C1011BV33 Electrical Characteristics Over the Operating Range (continued) Parameter VIH VIL IIX IOZ Description Input HIGH Voltage Input LOW Voltage Input Load Current Output Leakage Current Output Short Circuit Current[3] VCC Operating Supply Current Automatic CE Power-Down Current — TTL Inputs [1] Test Conditions 1011BV33-12 Min. 2.2 –0.3 0.8 +1 +1 Max. 1011BV33-15 Min. 2.2 –0.3 –1 –1 0.8 +1 +1 Max. Unit V V µA µA GND < VI < VCC GND < VI < VCC, Output Disabled VCC = Max., VOUT = GND VCC = Max., IOUT = 0 mA, f = fMAX = 1/tRC Max. VCC, CE > VIH VIN > VIH or VIN < VIL, f = fMAX Max. VCC, CE > VCC – 0.3V, VIN L > VCC – 0.3V, or VIN < 0.3V, f = 0 –1 –1 IOS –300 –300 mA ICC 190 170 mA ISB1 40 40 mA ISB2 Automatic CE Power-Down Current — CMOS Inputs 10 0.5 10 0.5 mA Capacitance[4] Parameter CIN COUT Description Input Capacitance Output Capacitance Test Conditions TA = 25°C, f = 1 MHz, VCC = 5.0V Max. 8 8 Unit pF pF AC Test Loads and Waveforms 5V OUTPUT 30 pF INCLUDING JIG AND SCOPE (a) OUTPUT Equivalent to: THÉVENIN EQUIVALENT R2 255Ω R 481 Ω R 481 Ω 5V OUTPUT 5 pF INCLUDING JIG AND SCOPE 167 1.73V 30 pF R2 255Ω GND 3.0V 90% 10% ALL INPUT PULSES 90% 10% (b) Rise Time: 1 V/ns 1011B-3 Fall Time:1 V/ns 1011B-4 Notes: 1. VIL (min.) = –2.0V for pulse durations of less than 20 ns. 2. TA is the “instant on” case temperature. 3. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds. Document #: 38-05021 Rev. *A Page 3 of 10 CY7C1011BV33 Switching Characteristics[5] Over the Operating Range 1011BV33-12 Parameter READ CYCLE tRC tAA tOHA tACE tDOE tLZOE tHZOE tLZCE tHZCE tPU tPD tDBE tLZBE tHZBE Read Cycle Time Address to Data Valid Data Hold from Address Change CE LOW to Data Valid OE LOW to Data Valid OE LOW to Low Z[6] OE HIGH to High Z CE HIGH to High Z [6, 7] 1011BV33-15 Min. 15 Max. Unit ns 15 3 15 7 0 7 3 7 0 15 7 0 7 ns ns ns ns ns ns ns ns ns ns ns ns ns Description Min. 12 Max. 12 3 12 6 0 6 3 6 0 12 6 0 6 CE LOW to Low Z[6] [6, 7] CE LOW to Power-Up CE HIGH to Power-Down Byte Enable to Data Valid Byte Enable to Low Z Byte Disable to High Z Notes: 4. Tested initially and after any design or process changes that may affect these parameters. 5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 30-pF load capacitance. 6. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 7. tHZOE, tHZBE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage. Document #: 38-05021 Rev. *A Page 4 of 10 CY7C1011BV33 Switching Characteristics[5] Over the Operating Range 1011BV33-12 Parameter WRITE CYCLE tWC tSCE tAW tHA tSA tPWE tSD tHD tLZWE tHZWE tBW [8] 1011BV33-15 Min. 15 12 12 0 0 12 8 0 3 Max. Unit ns ns ns ns ns ns ns ns ns 7 12 ns ns Description Write Cycle Time CE LOW to Write End Address Set-Up to Write End Address Hold from Write End Address Set-Up to Write Start WE Pulse Width Data Set-Up to Write End Data Hold from Write End WE HIGH to Low Z[6] WE LOW to High Z [6, 7] Min. 12 10 10 0 0 10 7 0 3 Max. 6 10 Byte Enable to End of Write Switching Waveforms Read Cycle No. 1 [9, 10] tRC ADDRESS tAA tOHA DATA OUT PREVIOUS DATA VALID DATA VALID 1011B-5 Note: 8. The internal write time of the memory is defined by the overlap of CE LOW, WE LOW and BHE / BLE LOW. CE, WE and BHE / BLE must be LOW to initiate a write, and the transition of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. 9. Device is continuously selected. OE, CE, BHE and/or BHE = VIL. 10. WE is HIGH for read cycle. Document #: 38-05021 Rev. *A Page 5 of 10 CY7C1011BV33 Switching Waveforms (continued) Read Cycle No. 2 (OE Controlled)[10, 11] ADDRESS tRC CE tACE OE BHE, BLE tDOE tLZOE tDBE tLZBE HIGH IMPEDANCE tLZCE VCC SUPPLY CURRENT tPU 50% tHZCE tHZBE DATA VALID tPD 50% IISB SB 1011B-6 tHZOE HIGH IMPEDANCE DATA OUT IICC CC Write Cycle No. 1 (CE Controlled) [12, 13] tWC ADDRESS CE tSA tSCE tAW tPWE WE tBW BHE, BLE tSD DATA I/O tHD tHA 1011B-7 Notes: 11. Address valid prior to or coincident with CE transition LOW. 12. Data I/O is high impedance if OE or BHE and/or BLE= VIH. 13. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. Document #: 38-05021 Rev. *A Page 6 of 10 CY7C1011BV33 Switching Waveforms (continued) Write Cycle No. 2 (BLE or BHE Controlled) tWC ADDRESS BHE, BLE tSA tBW tAW tPWE WE tSCE CE tSD DATA I/O tHD tHA 1011B-8 Write Cycle No. 3 (WE Controlled, OE LOW) tWC ADDRESS CE tSCE tAW tSA tPWE tHA WE tBW BHE, BLE tHZWE DATA I/O tLZWE tSD tHD 1011B-10 Document #: 38-05021 Rev. *A Page 7 of 10 CY7C1011BV33 Truth Table CE H L OE X L WE X H BLE X L L H L X L L L H L L H X H X X H BHE X L H L L H L X H I/O1–I/O8 High Z Data Out Data Out High Z Data In Data In High Z High Z High Z I/O9–I/O16 High Z Data Out High Z Data Out Data In High Z Data In High Z High Z Power-Down Read - All bits Read - Lower bits only Read - Upper bits only Write - All bits Write - Lower bits only Write - Upper bits only Selected, Outputs Disabled Selected, Outputs Disabled Mode Power Standby (ISB) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Document #: 38-05021 Rev. *A Page 8 of 10 CY7C1011BV33 Ordering Information Speed (ns) 12 15 Ordering Code CY7C1011BV33-12ZI CY7C1011BV33-12ZC CY7C1011BV33-15ZC CY7C1011BV33-15ZI Package Name Z44 Z44 Z44 Z44 Package Type 44-Lead TSOP Type II 44-Lead TSOP Type II 44-Lead TSOP Type II 44-Lead TSOP Type II Operating Range Industrial Commercial Commercial Industrial Package Diagrams 44-Pin TSOP II Z44 51-85087-A Document #: 38-05021 Rev. *A Page 9 of 10 © Cypress Semiconductor Corporation, 2001. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. CY7C1011BV33 Document Title: CY7C1011BV33 128K X 16 Static RAM Document Number: 38-05021 REV. ** *A ECN NO. 106652 107728 Issue Date 04/26/01 07/11/01 Orig. of Change MPR DFP New Data Sheet Remove SOJ TQFP Packages. Remove 8, 10 ns. changed Low Active Power to 684. Change words/array/ added 2 addresses. Description of Change Document #: 38-05021 Rev. *A Page 10 of 10