CY7C1012DV33-10BGXI

CY7C1012DV33 12-Mbit (512K X 24) Static RAM Features ■ Functional Description The CY7C1012DV33 is a high performance CMOS static RAM organized as 512K words by 24 bits. Each data byte is separately controlled by the individual chip selects (CE1, CE2, and CE3). CE1 controls the data on the I/O0 – I/O7, while CE2 controls the data on I/O8 – I/O15, and CE3 controls the data on the data pins I/O16 – I/O23. This device has an automatic power down feature that significantly reduces power consumption when deselected. Writing the data bytes into the SRAM is accomplished when the chip select controlling that byte is LOW and the write enable input (WE) input is LOW. Data on the respective input and output (I/O) pins is then written into the location specified on the address pins (A0 – A18). Asserting all of the chip selects LOW and write enable LOW writes all 24 bits of data into the SRAM. Output enable (OE) is ignored while in WRITE mode. Data bytes are also individually read from the device. Reading a byte is accomplished when the chip select controlling that byte is LOW and write enable (WE) HIGH, while output enable (OE) remains LOW. Under these conditions, the contents of the memory location specified on the address pins appear on the specified data input and output (I/O) pins. Asserting all the chip selects LOW reads all 24 bits of data from the SRAM. The 24 I/O pins (I/O0 – I/O23) are placed in a high impedance state when all the chip selects are HIGH or when the output enable (OE) is HIGH during a READ mode. For more information, see the Truth Table on page 8. High speed ❐ tAA = 10 ns Low active power ❐ ICC = 175 mA at 10 ns Low CMOS standby power ❐ ISB2 = 25 mA Operating voltages of 3.3 ± 0.3V 2.0V data retention Automatic power down when deselected TTL compatible inputs and outputs Available in Pb-free standard 119-ball PBGA ■ ■ ■ ■ ■ ■ ■ Logic Block Diagram INPUT BUFFER ROW DECODER A(9:0) 512K x 24 ARRAY SENSE AMPS I/O0 – I/O7 I/O8 – I/O15 I/O16 – I/O23 COLUMN DECODER CONTROL LOGIC CE1, CE2, CE3 WE OE A(18:10) Cypress Semiconductor Corporation Document Number: 38-05610 Rev. *D • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised November 6, 2008 [+] Feedback CY7C1012DV33 Selection Guide Description Maximum Access Time Maximum Operating Current Maximum CMOS Standby Current –10 10 175 25 Unit ns mA mA Pin Configuration Figure 1. 119-Ball PBGA (Top View) [1] 1 A B C D E F G H J K L M N P R T U NC NC I/O12 I/O13 I/O14 I/O15 I/O16 I/O17 NC I/O18 I/O19 I/O20 I/O21 I/O22 I/O23 NC NC 2 A A NC VDD VSS VDD VSS VDD VSS VDD VSS VDD VSS VDD A A A 3 A A CE2 VSS VDD VSS VDD VSS VDD VSS VDD VSS VDD VSS NC A A 4 A CE1 NC VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC WE OE 5 A A CE3 VSS VDD VSS VDD VSS VDD VSS VDD VSS VDD VSS NC A A 6 A A NC VDD VSS VDD VSS VDD VSS VDD VSS VDD VSS VDD A A A 7 NC NC I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 NC I/O6 I/O7 I/O8 I/O9 I/O10 I/O11 NC NC Note 1. NC pins are not connected on the die. Document Number: 38-05610 Rev. *D Page 2 of 11 [+] Feedback CY7C1012DV33 Maximum Ratings Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested. Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied ............................................ –55°C to +125°C Supply Voltage on VCC Relative to GND [2] ....–0.5V to +4.6V DC Voltage Applied to Outputs in High-Z State [2] .................................. –0.5V to VCC + 0.5V DC Input Voltage [2] Current into Outputs (LOW) ........................................ 20 mA Static Discharge Voltage............. ...............................>2001V (MIL-STD-883, Method 3015) Latch Up Current ..................................................... >200 mA Operating Range Range Industrial Ambient Temperature –40°C to +85°C VCC 3.3V ± 0.3V ............................... –0.5V to VCC + 0.5V DC Electrical Characteristics Over the Operating Range Parameter VOH VOL VIH VIL[2] IIX IOZ ICC ISB1 ISB2 Description Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Leakage Current Output Leakage Current VCC Operating Supply Current GND < VI < VCC GND < VOUT < VCC, output disabled VCC = Max, f = fMAX = 1/tRC IOUT = 0 mA CMOS levels Test Conditions [3] VCC = Min, IOH = –4.0 mA VCC = Min, IOL = 8.0 mA 2.0 –0.3 –1 –1 –10 Min 2.4 0.4 VCC + 0.3 0.8 +1 +1 175 30 25 Max Unit V V V V μA μA mA mA mA Automatic CE Power Down Max VCC, CE > VIH VIN > VIH or VIN < VIL, f = fMAX Current —TTL Inputs Automatic CE Power Down Max VCC, CE > VCC – 0.3V, Current —CMOS Inputs VIN > VCC – 0.3V, or VIN < 0.3V, f = 0 Notes 2. VIL (min) = –2.0V and VIH(max) = VCC + 2V for pulse durations of less than 20 ns. 3. CE indicates a combination of all three chip enables. When active LOW, CE indicates the CE1 or CE2 , or CE3 is LOW. When HIGH, CE indicates the CE1 , CE2 , and CE3 are HIGH. Document Number: 38-05610 Rev. *D Page 3 of 11 [+] Feedback CY7C1012DV33 Capacitance Tested initially and after any design or process changes that may affect these parameters. Parameter CIN COUT Description Input Capacitance I/O Capacitance Test Conditions TA = 25°C, f = 1 MHz, VCC = 3.3V Max 8 10 Unit pF pF Thermal Resistance Tested initially and after any design or process changes that may affect these parameters. Parameter ΘJA ΘJC Description Thermal Resistance (junction to ambient) Thermal Resistance (junction to case) Figure 2. AC Test Loads and Waveforms[4] Test Conditions Still air, soldered on a 3 × 4.5 inch, four layer printed circuit board 119-Ball PBGA 20.31 8.35 Unit °C/W °C/W 50Ω OUTPUT Z0 = 50Ω 30 pF* VTH = 1.5V 3.3V OUTPUT 5 pF* R1 317 Ω R2 351Ω (a) *Capacitive Load consists of all components of the test environment *Including jig and scope (b) All input pulses 3.0V GND 90% 10% (c) 90% 10% Fall Time:> 1V/ns Rise Time > 1V/ns Note 4. Valid SRAM operation does not occur until the power supplies have reached the minimum operating VDD (3.0V). 100μs (tpower) after reaching the minimum operating VDD, normal SRAM operation begins including reduction in VDD to the data retention (VCCDR, 2.0V) voltage. Document Number: 38-05610 Rev. *D Page 4 of 11 [+] Feedback CY7C1012DV33 AC Switching Characteristics Over the Operating Range [5] Parameter Read Cycle tpower [6] tRC tAA tOHA tACE tDOE tLZOE tHZOE tLZCE tHZCE tPU tPD Write Cycle [9, 10] tWC tSCE tAW tHA tSA tPWE tSD tHD tLZWE tHZWE Write Cycle Time CE Active LOW to Write End Address Setup to Write End Address Hold from Write End Address Setup to Write Start WE Pulse Width Data Setup to Write End Data Hold from Write End WE HIGH to Low Z WE LOW to High Z [7] [7] [3] Description –10 Min 100 10 10 3 10 5 1 5 3 5 0 Max Unit VCC(Typical) to the First Access Read Cycle Time Address to Data Valid Data Hold from Address Change CE Active LOW to Data Valid [3] OE LOW to Data Valid OE LOW to Low Z [7] [7] μs ns ns ns ns ns ns ns ns ns ns 10 ns ns ns ns ns ns ns ns ns ns 5 ns OE HIGH to High Z CE Active LOW to Low Z [3, 7] CE Deselect HIGH to High Z CE Active LOW to Power Up [3, 7] [3, 8] [3, 8] CE Deselect HIGH to Power Down 10 7 7 0 0 7 5.5 0 3 Notes 5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, and input pulse levels of 0 to 3.0V. Test conditions for the read cycle use output loading as shown in part a) of Figure 2, unless specified otherwise. 6. tPOWER gives the minimum amount of time that the power supply is at typical VCC values until the first memory access is performed. 7. tHZOE, tHZCE, tHZWE, tLZOE, tLZCE, and tLZWE are specified with a load capacitance of 5 pF as in part (b) of Figure 2. Transition is measured ±200 mV from steady state voltage. 8. These parameters are guaranteed by design and are not tested. 9. The internal write time of the memory is defined by the overlap of CE1 or CE2 or CE3 LOW and WE LOW. Chip enables must be active and WE must be LOW to initiate a write. The transition of any of these signals terminate the write. The input data setup and hold timing are referenced to the leading edge of the signal that terminates the write. 10. The minimum write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD. Document Number: 38-05610 Rev. *D Page 5 of 11 [+] Feedback CY7C1012DV33 Data Retention Characteristics Over the Operating Range Parameter VDR ICCDR tCDR [11] tR [12] Description VCC for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time VCC = 2V, CE > VCC – 0.2V, VIN > VCC – 0.2V or VIN < 0.2V 0 tRC Conditions [3] Min 2 25 Typ Max Unit V mA ns ns Data Retention Waveform DATA RETENTION MODE VCC CE 3.0V tCDR VDR > 2V 3.0V tR Switching Waveforms Figure 3. Read Cycle No. 1 [13, 14] tRC RC ADDRESS tAA tOHA DATA OUT PREVIOUS DATA VALID DATA VALID Figure 4. Read Cycle No. 2 (OE Controlled) [3, 14, 15] ADDRESS tRC CE tACE OE tDOE tLZOE DATA OUT HIGH IMPEDANCE tLZCE tPU VCC SUPPLY CURRENT 50% DATA VALID tPD 50% ICC ISB tHZOE tHZCE HIGH IMPEDANCE Notes 11. Tested initially and after any design or process changes that may affect these parameters. 12. Full device operation requires linear VCC ramp from VDR to VCC(min) > 50 μs or stable at VCC(min) > 50 μs. 13. Device is continuously selected. OE, CE = VIL. 14. WE is HIGH for read cycle. 15. Address valid before or similar to CE transition LOW. Document Number: 38-05610 Rev. *D Page 6 of 11 [+] Feedback CY7C1012DV33 Switching Waveforms (continued) Figure 5. Write Cycle No. 1 (CE Controlled) [3, 16, 17] tWC ADDRESS tSCE CE tSA tAW WE tPWE tSD DATA I/O DATA VALID tHD tSCE tHA Figure 6. Write Cycle No. 2 (WE Controlled, OE HIGH During Write) [3, 16, 17] tWC ADDRESS tSCE CE tAW tSA WE tPWE tHA OE tHZOE DATA I/O NOTE 18 tSD DATAIN VALID tHD Figure 7. Write Cycle No. 3 (WE Controlled, OE LOW) [3, 17] tWC ADDRESS tSCE CE tAW tSA WE tSD DATA I/O NOTE 18 tHZWE Notes 16. Data I/O is high impedance if OE = VIH. 17. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state. 18. During this period, the I/Os are in output state. Do not apply input signals. tHA tPWE tHD DATA VALID tLZWE Document Number: 38-05610 Rev. *D Page 7 of 11 [+] Feedback CY7C1012DV33 Truth Table CE1 H L H H L L H H L L CE2 H H L H L H L H L L CE3 H H H L L H H L L L OE X L L L L X X X X H WE X H H H H L L L L H I/O0 – I/O7 High Z Data Out High Z High Z Full Data Out Data In High Z High Z Full Data In High Z I/O8 – I/O15 High Z High Z Data Out High Z Full Data Out High Z Data In High Z Full Data In High Z I/O16 – I/O23 High Z High Z High Z Data Out Full Data Out High Z High Z Data In Full Data In High Z Mode Power Down Read Read Read Read Write Write Write Write Power Standby (ISB) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Selected, Active (ICC) Outputs Disabled Document Number: 38-05610 Rev. *D Page 8 of 11 [+] Feedback CY7C1012DV33 Ordering Information Speed (ns) 10 Ordering Code CY7C1012DV33-10BGXI Package Name 51-85115 Package Type 119-Ball Plastic Ball Grid Array (14 x 22 x 2.4 mm) (Pb-Free) Operating Range Industrial Package Diagram Figure 8. 119-Ball PBGA (14 x 22 x 2.4 mm) 51-85115-*B Document Number: 38-05610 Rev. *D Page 9 of 11 [+] Feedback CY7C1012DV33 Document History Page Document Title: CY7C1012DV33 12-Mbit (512K X 24) Static RAM Document Number: 38-05610 Rev. ** *A ECN No. 250650 469517 Orig. of Change SYT NXR Submission Date See ECN See ECN New data sheet Converted from Advance Information to Preliminary Corrected typo in the Document Title Removed –10 and –12 speed bins from product offering Changed J7 Ball of BGA from DNU to NC Removed Industrial Operating range from product offering Included the Maximum ratings for Static Discharge Voltage and Latch Up Current on page 3 Changed ICC(Max) from 220 mA to 150 mA Changed ISB1(Max) from 70 mA to 30 mA Changed ISB2(Max) from 40 mA to 25 mA Specified the Overshoot specification in footnote 1 Updated the Truth Table Updated the Ordering Information table Added note 1 for NC pins Changed ICC specification from 150 mA to 185 mA Updated Test Condition for ICC in DC Electrical Characteristics table Added note for tACE, tLZCE, tHZCE, tPU, tPD, and tSCE in AC Switching Characteristics Table on page 4 Converted from preliminary to final Updated block diagram Changed ICC specification from 185 mA to 225 mA Updated thermal specs Removed Commercial operating range, Added Industrial operating range Removed 8 ns speed bin, Added 10 ns speed bin, Modified footnote# 3 Description of Change *B 499604 NXR See ECN *C 1462585 VKN See ECN *D 2604677 VKN/PYRS 11/12/08 Document Number: 38-05610 Rev. *D Page 10 of 11 [+] Feedback CY7C1012DV33 Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. 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Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document Number: 38-05610 Rev. *D Revised November 6, 2008 Page 11 of 11 All product and company names mentioned in this document are the trademarks of their respective holders. [+] Feedback