CY7C1020B-12ZXC

CY7C1020B 32K x 16 Static RAM Features • High speed — tAA = 12, 15 ns • CMOS for optimum speed/power • Low active power — 825 mW (max.) • Low CMOS standby power — 16.5 mW (max.) • Automatic power-down when deselected • Independent control of upper and lower bits • Available in lead-free and non-lead-free 44-pin TSOP II and 44-pin (400-mil) SOJ packages Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0 through A14). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O9 through I/O16) is written into the location specified on the address pins (A0 through A14). Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O1 to I/O8. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O9 to I/O16. See the truth table at the back of this data sheet for a complete description of read and write modes. The input/output pins (I/O1 through I/O16) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). The CY7C1020B is available in standard 44-pin TSOP Type II and 44-pin 400-mil-wide SOJ packages. Functional Description The CY7C1020B is a high-performance CMOS static RAM organized as 32,768 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Logic Block Diagram DATA IN DRIVERS Pin Configuration SOJ / TSOP II Pinout Top View NC A3 A2 A1 A0 CE I/O1 I/O2 I/O3 I/O4 VCC VSS I/O5 I/O6 I/O7 I/O8 WE A4 A14 A13 A12 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A7 A6 A5 A4 A3 A2 A1 A0 32K x 16 RAM Array I/O1–I/O8 I/O9–I/O16 COLUMN DECODER BHE WE CE OE BLE A5 A6 A7 OE BHE BLE I/O16 I/O15 I/O14 I/O13 VSS VCC I/O12 I/O11 I/O10 I/O9 NC A8 A9 A10 A11 NC ROW DECODER Selection Guide CY7C1020B-12 Maximum Access Time (ns) Maximum Operating Current (mA) Maximum CMOS Standby Current (mA) 12 140 3 CY7C1020B-15 15 130 3 A8 A9 A10 A11 A12 A13 A14 SENSE AMPS Cypress Semiconductor Corporation Document #: 38-05171 Rev. *C • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised May 26, 2006 [+] [+] Feedback CY7C1020B Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage on VCC Relative to GND[1] .... –0.5V to +7.0V DC Voltage Applied to Outputs in High Z State[1] ....................................–0.5V to VCC + 0.5V DC Input Voltage[1] .................................–0.5V to VCC + 0.5V Current into Outputs (LOW)......................................... 20 mA Static Discharge Voltage............................................ >2001V (per MIL-STD-883, Method 3015) Latch-Up Current ..................................................... >200 mA Operating Range Range Commercial Ambient Temperature[2] 0°C to +70°C VCC 5V ± 10% Electrical Characteristics Over the Operating Range Parameter VOH VOL VIH VIL IIX IOZ IOS ICC ISB1 ISB2 Description Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage[1] GND < VI < VCC GND < VI < VCC, Output Disabled VCC = Max., IOUT = 0 mA, f = fMAX = 1/tRC Max. VCC, CE > VIH VIN > VIH or VIN < VIL, f = fMAX Max. VCC, CE > VCC – 0.3V, VIN > VCC – 0.3V, or VIN < 0.3V, f = 0 Input Leakage Current Output Leakage Current VCC Operating Supply Current Automatic CE Power-Down Current—TTL Inputs Automatic CE Power-Down Current—CMOS Inputs Test Conditions VCC = Min., IOH = –4.0 mA VCC = Min., IOL = 8.0 mA 2.2 –0.5 –1 –1 CY7C1020B-12 Min. 2.4 0.4 6.0 0.8 +1 +1 –300 140 20 3 2.2 –0.5 –1 –1 Max. CY7C1020B-15 Min. 2.4 0.4 6.0 0.8 +1 +1 –300 130 20 3 Max. Unit V V V V µA µA mA mA mA mA Output Short Circuit Current[3] VCC = Max., VOUT = GND Capacitance[4] Parameter CIN COUT Description Input Capacitance Output Capacitance Test Conditions TA = 25°C, f = 1 MHz, VCC = 5.0V Max. 8 8 Unit pF pF Thermal Resistance[4] Parameter ΘJA ΘJC Description Thermal Resistance (Junction to Ambient) Thermal Resistance (Junction to Case) Test Conditions Still Air, soldered on a 3 × 4.5 inch, four-layer printed circuit board TSOP II Package 50.55 15.8 SOJ Package 56.31 32.9 Unit °C/W °C/W Notes: 1. VIL (min.) = –2.0V for pulse durations of less than 20 ns. 2. TA is the case temperature. 3. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds. 4. Tested initially and after any design or process changes that may affect these parameters. Document #: 38-05171 Rev. *C Page 2 of 9 [+] [+] Feedback CY7C1020B AC Test Loads and Waveforms 5V OUTPUT 30 pF INCLUDING JIG AND SCOPE (a) OUTPUT Equivalent to: THÉVENIN EQUIVALENT R2 255Ω R 481 Ω 5V OUTPUT 5 pF INCLUDING JIG AND SCOPE (b) 167 30 pF R2 255Ω GND R 481Ω 3.0V 90% 10% ALL INPUT PULSES 90% 10% Rise Time: 1 V/ns Fall Time: 1 V/ns 1.73V Switching Characteristics[5] Over the Operating Range CY7C1020B-12 Parameter Read Cycle tRC tAA tOHA tACE tDOE tLZOE tHZOE tLZCE tHZCE tPU tPD tDBE tLZBE tHZBE Write tWC tSCE tAW tHA tSA tPWE tSD tHD tLZWE tHZWE tBW Cycle[8] Write Cycle Time CE LOW to Write End Address Set-Up to Write End Address Hold from Write End Address Set-Up to Write Start WE Pulse Width Data Set-Up to Write End Data Hold from Write End WE HIGH to Low WE LOW to High Z[6] Z[6, 7] 8 12 9 8 0 0 8 6 0 3 6 9 15 10 10 0 0 10 8 0 3 7 ns ns ns ns ns ns ns ns ns ns ns Read Cycle Time Address to Data Valid Data Hold from Address Change CE LOW to Data Valid OE LOW to Data Valid OE LOW to Low CE LOW to Low Z[6] Z[6, 7] 3 6 0 12 6 0 6 0 7 0 15 7 Z[6, 7] Z[6] 0 6 3 7 OE HIGH to High CE HIGH to High 3 12 6 0 7 12 12 3 15 7 15 15 ns ns ns ns ns ns ns ns ns ns ns ns ns ns Description Min. Max. CY7C1020B-15 Min. Max. Unit CE LOW to Power-Up CE HIGH to Power-Down Byte Enable to Data Valid Byte Enable to Low Z Byte Disable to High Z Byte Enable to End of Write Notes: 5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 30-pF load capacitance. 6. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 7. tHZOE, tHZBE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage. 8. The internal write time of the memory is defined by the overlap of CE LOW, WE LOW and BHE / BLE LOW. CE, WE and BHE / BLE must be LOW to initiate a write, and the transition of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. Document #: 38-05171 Rev. *C Page 3 of 9 [+] [+] Feedback CY7C1020B Switching Waveforms Read Cycle No. 1[9, 10] tRC ADDRESS tAA tOHA DATA OUT PREVIOUS DATA VALID DATA VALID Read Cycle No. 2 (OE Controlled)[10, 11] ADDRESS tRC CE tACE OE BHE, BLE tDOE tLZOE tDBE tLZBE HIGH IMPEDANCE tLZCE VCC SUPPLY CURRENT tPU 50% tHZCE tHZBE DATA VALID tPD 50% IISB SB IICC CC tHZOE HIGH IMPEDANCE DATA OUT Notes: 9. Device is continuously selected. OE, CE, BHE and/or BHE = VIL. 10. WE is HIGH for read cycle. 11. Address valid prior to or coincident with CE transition LOW. Document #: 38-05171 Rev. *C Page 4 of 9 [+] [+] Feedback CY7C1020B Switching Waveforms (continued) Write Cycle No. 1 (CE Controlled)[12, 13] tWC ADDRESS CE tSA tSCE tAW tPWE WE tBW BHE, BLE tSD DATA I/O tHD tHA Write Cycle No. 2 (BLE or BHE Controlled) tWC ADDRESS BHE, BLE tSA tBW tAW tPWE WE tSCE CE tSD DATA I/O tHD tHA Notes: 12. Data I/O is high impedance if OE or BHE and/or BLE = VIH. 13. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. Document #: 38-05171 Rev. *C Page 5 of 9 [+] [+] Feedback CY7C1020B Switching Waveforms (continued) Write Cycle No. 3 (WE Controlled, OE LOW) tWC ADDRESS CE tSCE tAW tSA tPWE tHA WE tBW BHE, BLE tHZWE DATA I/O tLZWE tSD tHD Truth Table CE H L OE X L WE X H BLE X L L H L X L L L H L L H X H X X H BHE X L H L L H L X H I/O1–I/O8 High Z Data Out Data Out High Z Data In Data In High Z High Z High Z I/O9–I/O16 High Z Data Out High Z Data Out Data In High Z Data In High Z High Z Power-Down Read – All bits Read – Lower bits only Read – Upper bits only Write – All bits Write – Lower bits only Write – Upper bits only Selected, Outputs Disabled Selected, Outputs Disabled Mode Power Standby (ISB) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Document #: 38-05171 Rev. *C Page 6 of 9 [+] [+] Feedback CY7C1020B Ordering Information Speed (ns) 12 Ordering Code CY7C1020B-12VC CY7C1020B-12VXC CY7C1020B-12ZC CY7C1020B-12ZXC 15 CY7C1020B-15ZC CY7C1020B-15ZXC 51-85087 51-85087 Package Diagram 51-85082 Package Type 44-pin (400-Mil) Molded SOJ 44-pin (400-Mil) Molded SOJ (Pb-free) 44-pin TSOP Type II 44-pin TSOP Type II (Pb-free) 44-pin TSOP Type II 44-pin TSOP Type II (Pb-free) Operating Range Commercial Package Diagrams 44-pin (400-Mil) Molded SOJ (51-85082) 51-85082-*B Document #: 38-05171 Rev. *C Page 7 of 9 [+] [+] Feedback CY7C1020B Package Diagrams (continued) 44-pin TSOP II (51-85087) 51-85087-*A All product and company names mentioned in this document may be the trademarks of their respective holders. Document #: 38-05171 Rev. *C Page 8 of 9 © Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. [+] [+] Feedback CY7C1020B Document History Page Document Title: CY7C1020B 32K x 16 Static RAM Document #: 38-05171 REV. ** *A *B ECN NO. 115439 116869 426747 Issue Date 05/09/02 08/21/02 See ECN Orig. of Change DSG DFP ZSD Description of Change New Data Sheet Added L-Power Specifications. Changed the address of Cypress Semiconductor Corporation on Page #1 from “3901 North First Street” to “198 Champion Court”. Added thermal resistance table. Updated the ordering information table and replaced the Package Name column with Package Diagram. Corrected typo in Pin Configuration (Changed A15 to A4) Removed L-Power Specifications Updated the Ordering Information table *C 465909 See ECN NXR Document #: 38-05171 Rev. *C Page 9 of 9 [+] [+] Feedback