CY7C1021BN-15VXEKJ

021V CY7C1021V 64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lower bits • Available in 44-pin TSOP II and 400-mil SOJ • Available in a 48-Ball Mini BGA package Functional Description The CY7C1021V is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8 ), is written into the location specified on the address pins (A0 through A15 ). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O9 through I/O16 ) is written into the location specified on the address pins (A0 through A15 ). Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O1 to I/O8. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O9 to I/O16. See the truth table at the back of this data sheet for a complete description of read and write modes. The input/output pins (I/O1 through I/O16) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). The CY7C1021V is available in 400-mil-wide SOJ, standard 44-pin TSOP Type II, and in 48-ball mini BGA packages. Logic Block Diagram Pin Configuration SOJ / TSOP II Top View SENSE AMPS A7 A6 A5 A4 A3 A2 A1 A0 ROW DECODER DATA IN DRIVERS 64K x 16 RAM Array 512 X 2048 I/O1 – I/O8 I/O9 – I/O16 COLUMN DECODER A8 A9 A10 A11 A12 A13 A14 A15 BHE WE CE OE BLE A4 A3 A2 A1 A0 CE I/O1 I/O2 I/O3 I/O4 VCC VSS I/O5 I/O6 I/O7 I/O8 WE A15 A14 A13 A12 NC 1 44 2 3 43 42 4 41 40 39 38 5 6 7 8 9 10 11 12 37 36 35 34 33 32 31 30 29 28 27 13 14 15 16 17 18 19 20 21 22 26 25 24 23 A5 A6 A7 OE BHE BLE I/O16 I/O15 I/O14 I/O13 VSS VCC I/O12 I/O11 I/O10 I/O9 NC A8 A9 A10 A11 NC 1021V-2 1021V-1 Selection Guide 7C1021V-10 Maximum Access Time (ns) Maximum Operating Current (mA) Commercial Maximum CMOS Standby Current (mA) Commercial L L Cypress Semiconductor Corporation Document #: 38-05060 Rev. ** • 3901 North First Street • 7C1021V-12 7C1021V-15 10 12 15 210 200 190 160 150 140 5 5 5 0.500 0.500 0.500 San Jose • CA 95134 • 408-943-2600 Revised August 31, 2001 CY7C1021V Pin Configurations (continued) Mini BGA (Top View) 1 2 3 4 5 6 BLE OE A0 A1 A2 NC A I/O9 BHE A3 A4 CE I/O1 B I/O10 I/O11 A5 A6 I/O2 I/O3 C VSS I/O12 NC A7 I/O4 VCC D VCC I/O13 NC NC I/O5 VSS E I/O15 I/O14 A14 A15 I/O6 I/O7 F I/O16 NC NC A8 A12 A13 WE I/O8 G A9 A10 A11 H Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage on VCC to Relative GND[1] .... –0.5V to +4.6V DC Voltage Applied to Outputs in High Z State[1] ......................................–0.5V to VCC+0.5V DC Input Voltage[1] ..................................–0.5V to VCC+0.5V NC Current into Outputs (LOW) ........................................ 20 mA Static Discharge Voltage ........................................... >2001V (per MIL-STD-883, Method 3015) Latch-Up Current..................................................... >200 mA Operating Range Range Commercial Industrial Ambient Temperature[2] VCC 0°C to +70°C 3.3V ± 10% –40°C to +85°C 3.3V ± 10% Notes: 1. VIL (min.) = –2.0V for pulse durations of less than 20 ns. 2. TA is the “instant on” case temperature. Document #: 38-05060 Rev. ** Page 2 of 11 CY7C1021V Electrical Characteristics Over the Operating Range Parameter Description Test Conditions 7C1021V-10 7C1021V-12 7C1021V-15 Min. Min. Min. Max. Max. 2.4 Max. Unit VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA 0.4 V VIH Input HIGH Voltage 2.2 VCC+ 0.3V 2.2 VCC+ 0.3V 2.2 VCC+ 0.3V V VIL Input LOW Voltage[1] −0.3 0.8 –0.3 0.8 –0.3 0.8 V IIX Input Load Current GND < VI < VCC −1 +1 –1 +1 –1 +1 µA IOZ Output Leakage Current GND < VI < VCC, Output Disabled −1 +1 –1 +1 –1 +1 µA ICC VCC Operating Supply Current VCC = Max., IOUT = 0 mA, f = fMAX = 1/tRC ISB1 Automatic CE Power-Down Current —TTL Inputs ISB2 Automatic CE Power-Down Current —CMOS Inputs 2.4 2.4 0.4 V 0.4 210 200 190 mA 160 150 140 mA Max. VCC, CE > VIH VIN > VIH or VIN < VIL, f = fMAX 40 40 40 mA Max. VCC, CE > VCC – 0.3V, VIN > VCC – 0.3V, or VIN < 0.3V, f = 0 5 5 5 mA 500 500 500 µA L L Capacitance[3] Parameter Description CIN Input Capacitance COUT Output Capacitance Test Conditions Max. Unit 6 pF 8 pF TA = 25°C, f = 1 MHz Note: 3. Tested initially and after any design or process changes that may affect these parameters. AC Test Loads and Waveforms R 317 Ω R 317 Ω 3.3V ALL INPUT PULSES 3.3V OUTPUT 3.0V 90% OUTPUT 30 pF R2 351Ω INCLUDING JIG AND SCOPE (a) R2 351Ω 5 pF INCLUDING JIG AND SCOPE GND VCC – 0.3V or VIN < 0.3V Unit V 100 µA 0 ns tRC ns Notes: 4. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 30-pF load capacitance. 5. tHZOE, tHZBE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage. 6. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 7. The internal write time of the memory is defined by the overlap of CE LOW, WE LOW and BHE / BLE LOW. CE, WE and BHE / BLE must be LOW to initiate a write, and the transition of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. 8. Tested initially and after any design or process changes that may affect these parameters. 9. tr < 3 ns for the -12 and -15 speeds. tr < 5 ns for the -20 and slower speeds. 10. No input may exceed VCC + 0.5V. Document #: 38-05060 Rev. ** Page 4 of 11 CY7C1021V Data Retention Waveform DATA RETENTION MODE 3.0V VCC VDR > 2V 3.0V tR tCDR CE 1021V–5 Switching Waveforms Read Cycle No. 1 [11, 12] tRC ADDRESS tAA tOHA DATA OUT PREVIOUS DATA VALID DATA VALID 1021V-6 Read Cycle No. 2 (OE Controlled) [12, 13] ADDRESS tRC CE tACE OE tHZOE tDOE BHE, BLE tLZOE tHZCE tDBE tLZBE DATA OUT HIGH IMPEDANCE tLZCE VCC SUPPLY CURRENT tHZBE HIGH IMPEDANCE DATA VALID tPD tPU 50% IICC CC 50% IISB SB 1021V-7 Notes: 11. Device is continuously selected. OE, CE, BHE and/or BHE = VIL. 12. WE is HIGH for read cycle. 13. Address valid prior to or coincident with CE transition LOW. Document #: 38-05060 Rev. ** Page 5 of 11 CY7C1021V Switching Waveforms (continued) Write Cycle No. 1 (CE Controlled) [14, 15] tWC ADDRESS CE tSA tSCE tAW tHA tPWE WE tBW BHE, BLE tSD tHD DATA I/O 1021V-8 Write Cycle No. 2 (BLE or BHE Controlled) tWC ADDRESS BHE, BLE tSA tBW tAW tHA tPWE WE tSCE CE tSD tHD DATA I/O 1021V-9 Notes: 14. Data I/O is high impedance if OE or BHE and/or BLE= VIH. 15. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. Document #: 38-05060 Rev. ** Page 6 of 11 CY7C1021V Switching Waveforms (continued) Write Cycle No. 3 (WE Controlled, LOW) tWC ADDRESS tSCE CE tAW tHA tSA tPWE WE tBW BHE, BLE tHZWE tSD tHD DATA I/O tLZWE 1021V-10 Truth Table CE OE H X L L L X WE BLE BHE X X X High Z High Z Power-Down Standby (ISB) H L L Data Out Data Out Read - All bits Active (ICC) L H Data Out High Z Read - Lower bits only Active (ICC) H L High Z Data Out Read - Upper bits only Active (ICC) L L Data In Data In Write - All bits Active (ICC) L H Data In High Z Write - Lower bits only Active (ICC) H L High Z Data In Write - Upper bits only Active (ICC) L I/O1–I/O8 I/O9–I/O16 Mode Power L H H X X High Z High Z Selected, Outputs Disabled Active (ICC) L X X H H High Z High Z Selected, Outputs Disabled Active (ICC) Document #: 38-05060 Rev. ** Page 7 of 11 CY7C1021V Ordering Information Speed (ns) 10 12 Ordering Code CY7C1021V33-10BAC BA48 Package Type 48-Ball Mini Ball Grid Array (7.00 mm x 7.00 mm) CY7C1021V33-10VC V34 CY7C1021V33L-10VC V34 44-Lead (400-Mil) Molded SOJ CY7C1021V33-10ZC Z44 44-Lead TSOP Type II CY7C1021V33L-10ZC Z44 44-Lead TSOP Type II CY7C1021V33-12BAC BA48 48-Ball Mini Ball Grid Array (7.00 mm x 7.00 mm) V34 44-Lead (400-Mil) Molded SOJ CY7C1021V33L-12VC V34 44-Lead (400-Mil) Molded SOJ CY7C1021V33-12ZC Z44 44-Lead TSOP Type II CY7C1021V33L-12ZC Z44 44-Lead TSOP Type II CY7C1021V33-12BAI BA48 V34 Commercial 48-Ball Mini Ball Grid Array (7.00 mm x 7.00 mm) Commercial Industrial 44-Lead (400-Mil) Molded SOJ CY7C1021V33-15BAC BA48 48-Ball Mini Ball Grid Array (7.00 mm x 7.00 mm) CY7C1021V33L-15BAC BA48 48-Ball Mini Ball Grid Array (7.00 mm x 7.00 mm) CY7C1021V33-15VC V34 44-Lead (400-Mil) Molded SOJ CY7C1021V33L-15VC V34 44-Lead (400-Mil) Molded SOJ CY7C1021V33-15ZC Z44 44-Lead TSOP Type II CY7C1021V33L-15VC Z44 44-Lead TSOP Type II CY7C1021V33-15BAI BA48 48-Ball Mini Ball Grid Array (7.00 mm x 7.00 mm) CY7C1021V33L-15BAI BA48 48-Ball Mini Ball Grid Array (7.00 mm x 7.00 mm) CY7C1021V33-15VI V34 44-Lead (400-Mil) Molded SOJ CY7C1021V33L-15ZI Z44 44-Lead TSOP Type II Document #: 38-05060 Rev. ** Operating Range 44-Lead (400-Mil) Molded SOJ CY7C1021V33-12VC CY7C1021V33-12VI 15 Package Name Commercial Industrial Page 8 of 11 CY7C1021V Package Diagrams 48-Ball (7.00 mm x 7.00 mm) FBGA BA48 51-85096-C Document #: 38-05060 Rev. ** Page 9 of 11 CY7C1021V Package Diagrams (continued) 44-Lead (400-Mil) Molded SOJ V34 51-85082-B 44-Pin TSOP II Z44 51-85087-A Document #: 38-05060 Rev. ** Page 10 of 11 © Cypress Semiconductor Corporation, 2001. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. CY7C1021V Document Title: CY7C1021V 64K x 16 Static RAM Document Number: 38-05060 REV. ECN NO. Issue Date Orig. of Change Description of Change ** 107251 09/10/01 SZV Change from Spec number: 38-00544 to 38-05060 Document #: 38-05060 Rev. ** Page 11 of 11