CY7C1021BN
1-Mbit (64 K × 16) Static RAM
1-Mbit (64 K × 16) Static RAM
Features
■
Functional Description
Temperature ranges
❐ Commercial: 0 °C to 70 °C
❐ Industrial: –40 °C to 85 °C
❐ Automotive-A: –40 °C to 85 °C
❐ Automotive-E: –40 °C to 125 °C
The CY7C1021BN is a high performance CMOS static RAM
organized as 65,536 words by 16 bits. This device has an
automatic power down feature that significantly reduces power
consumption when deselected.
■
High speed
❐ tAA = 15 ns (Automotive)
■
Complementary metal oxide semiconductor (CMOS) for
optimum speed/power
■
Low active power
❐ 825 mW (maximum)
■
Automatic power down when deselected
■
Independent control of upper and lower bits
■
Available in Pb-free and non Pb-free 44-pin TSOP II and 44-pin
400-mil-wide SOJ
Writing to the device is accomplished by taking Chip Enable (CE)
and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is
LOW, then data from the input/output (I/O) pins (I/O1 through
I/O8), is written into the location specified on the address pins (A0
through A15). If Byte High Enable (BHE) is LOW, then data from
I/O pins (I/O9 through I/O16) is written into the location specified
on the address pins (A0 through A15).
Reading from the device is accomplished by taking CE and
Output Enable (OE) LOW while forcing WE HIGH. If BLE is LOW,
then data from the memory location specified by the address pins
appears on I/O1 to I/O8. If BHE is LOW, then data from memory
appears on I/O9 to I/O16. See the Truth Table on page 11 for a
complete description of read and write modes.
The I/O pins (I/O1 through I/O16) are placed in a high impedance
state when the device is deselected (CE HIGH), the outputs are
disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE
HIGH), or during a write operation (CE LOW, WE LOW).
The CY7C1021BN is available in standard 44-pin TSOP type II
and 44-pin 400-mil-wide SOJ packages. Use part number
CY7C1021BN when ordering 15 ns tAA.
For a complete list of related resources, click here.
Logic Block Diagram
64K x 16
RAM Array
512 X 2048
Sense Amps
A7
A6
A5
A4
A3
A2
A1
A0
Row Decoder
Data In Drivers
I/O1–I/O8
I/O9–I/O16
Column Decoder
A8
A9
A10
A11
A12
A13
A14
A15
BHE
WE
CE
OE
BLE
Cypress Semiconductor Corporation
Document Number: 001-06494 Rev. *J
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised November 29, 2017
CY7C1021BN
Contents
Selection Guide ................................................................ 3
Pin Configuration ............................................................. 3
Pin Definitions .................................................................. 4
Maximum Ratings ............................................................. 5
Operating Range ............................................................... 5
Electrical Characteristics ................................................. 5
Capacitance ...................................................................... 6
Thermal Resistance .......................................................... 6
AC Test Loads and Waveforms ....................................... 6
Switching Characteristics ................................................ 7
Switching Waveforms ...................................................... 8
Truth Table ...................................................................... 11
Ordering Information ...................................................... 12
Ordering Code Definitions ......................................... 12
Document Number: 001-06494 Rev. *J
Package Diagrams .......................................................... 13
Acronyms ........................................................................ 14
Document Conventions ................................................. 14
Units of Measure ....................................................... 14
Document History Page ................................................. 15
Sales, Solutions, and Legal Information ...................... 16
Worldwide Sales and Design Support ....................... 16
Products .................................................................... 16
PSoC® Solutions ...................................................... 16
Cypress Developer Community ................................. 16
Technical Support ..................................................... 16
Page 2 of 16
CY7C1021BN
Selection Guide
Description
CY7C1021B-15
Maximum access time (ns)
Maximum operating current (mA)
Maximum CMOS standby current (mA)
15
Commercial/Industrial
130
Automotive-A
130
Automotive-E
130
Commercial/Industrial
10
Commercial/Industrial (L version)
0.5
Automotive-A (L version)
0.5
Automotive-E
15
Pin Configuration
Figure 1. 44-pin SOJ/TSOP II pinout (Top View)
A4
A3
A2
A1
A0
CE
I/O1
I/O2
I/O3
I/O4
VCC
VSS
I/O5
I/O6
I/O7
I/O8
WE
A15
A14
A13
A12
NC
Document Number: 001-06494 Rev. *J
1
44
2
3
43
42
4
41
40
39
38
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
BHE
BLE
I/O16
I/O15
I/O14
I/O13
VSS
VCC
I/O12
I/O11
I/O10
I/O9
NC
A8
A9
A10
A11
NC
Page 3 of 16
CY7C1021BN
Pin Definitions
Pin Name
Pin Number
I/O Type
A0–A15
1–5,18–21,
24–27, 42–44
Input
Description
Address inputs used to select one of the address locations.
I/O1–I/O16 7–10, 13–16, Input/Output Bidirectional data I/O lines. Used as input or output lines depending on operation.
29–32, 35–38
NC
22, 23, 28
WE
17
Input/Control Write enable input, active LOW. When selected LOW, a write is conducted. When
deselected HIGH, a read is conducted.
No Connect Not connected to the die.
CE
6
Input/Control Chip enable input, active LOW. When LOW, selects the chip. When HIGH, deselects the
chip.
BHE, BLE
40, 39
Input/Control Byte enable select inputs, active LOW. BHE controls I/O16–I/O9, BLE controls I/O8–I/O1.
OE
41
VSS
12, 34
VCC
11, 33
Input/Control Output enable, active LOW. Controls the direction of the I/O pins. When LOW, the I/O
pins are allowed to behave as outputs. When deasserted HIGH, I/O pins are tristated,
and act as input data pins.
Ground
Ground for the device. Should be connected to ground of the system.
Power Supply Power supply inputs to the device.
Document Number: 001-06494 Rev. *J
Page 4 of 16
CY7C1021BN
Maximum Ratings
Current into outputs (LOW) ........................................ 20 mA
Static discharge voltage
(per MIL-STD-883, Method 3015) .......................... > 2001 V
Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 C to +150 C
Latch-up current .................................................... > 200 mA
Ambient temperature with
power applied .......................................... –55C to +125 C
Operating Range
Range
Supply voltage on
VCC relative to GND [1] ................................–0.5 V to +7.0 V
Ambient Temperature (TA)[2]
VCC
0 C to +70 C
5 V 10%
Commercial
DC voltage applied to outputs
in High Z state [1] ................................ –0.5 V to VCC + 0.5 V
Industrial
DC input voltage [1] ............................. –0.5 V to VCC + 0.5 V
–40 C to +85 C
Automotive-A
–40 C to +85 C
Automotive-E
–40 C to +125 C
Electrical Characteristics
Over the operating range
Parameter
Description
Test Conditions
VOH
Output HIGH voltage
VCC = Min, IOH = –4.0 mA
VOL
Output LOW voltage
VCC = Min, IOL = 8.0 mA
VIH
Input HIGH voltage
voltage[1]
VIL
Input LOW
IIX
Input leakage current
IOZ
ICC
ISB1
ISB2
Output leakage current
VCC operating supply current
Automatic CE power down
current – TTL inputs
Automatic CE power down
current – CMOS inputs
GND < VI < VCC
GND < VI < VCC,
Output Disabled
VCC = Max,
IOUT = 0 mA,
f = fMAX = 1/tRC
-15
Min
Max
Unit
2.4
–
V
–
0.4
V
2.2
6.0
V
–0.5
0.8
V
Commercial / Industrial
–1
+1
A
Automotive-A
–1
+1
A
Automotive-E
–4
+4
A
Commercial / Industrial
–1
+1
A
Automotive-A
–1
+1
A
Automotive-E
–4
+4
A
Commercial / Industrial
–
130
mA
Automotive-A
–
130
–
130
Max VCC, CE > VIH,
Commercial / Industrial
VIN > VIH or VIN < VIL,
Automotive-A
f = fMAX
Automotive-E
Automotive-E
–
40
–
40
–
50
Max VCC,
CE > VCC – 0.3 V,
VIN > VCC – 0.3 V,
or VIN < 0.3 V, f = 0
Commercial / Industrial
–
10
Commercial / Industrial (L)
–
0.5
Automotive-A (L)
–
0.5
Automotive-E
–
15
mA
mA
Notes
1. VIL (min.) = –2.0 V and VIH(max) = VCC + 0.5 V for pulse durations of less than 20 ns.
2. TA is the “Instant On” case temperature.
Document Number: 001-06494 Rev. *J
Page 5 of 16
CY7C1021BN
Capacitance
Parameter [3]
Description
Test Conditions
TA = 25 C, f = 1 MHz, VCC = 5.0 V
CIN
Input capacitance
COUT
Output capacitance
Max
Unit
8
pF
8
pF
Thermal Resistance
Parameter [3]
Description
JA
Thermal resistance
(junction to ambient)
JC
Thermal resistance
(junction to case)
Test Conditions
44-pin SOJ
44-pin TSOP II Unit
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA / JESD51.
64.32
76.89
C/W
31.03
14.28
C/W
AC Test Loads and Waveforms
Figure 2. AC Test Loads and Waveforms
R 481
5V
OUTPUT
R 481
5V
3.0 V
OUTPUT
30 pF
R2
255
INCLUDING
JIG AND
SCOPE
(a)
OUTPUT
Equivalent to: THÉVENIN
EQUIVALENT
5 pF
R2
GND
255
INCLUDING
JIG AND
SCOPE
(b)
167
Rise Time: 1 V/ns
ALL INPUT PULSES
90%
10%
90%
10%
Fall Time: 1 V/ns
1.73 V
30 pF
Note
3. Tested initially and after any design or process changes that may affect these parameters.
Document Number: 001-06494 Rev. *J
Page 6 of 16
CY7C1021BN
Switching Characteristics
Over the operating range
Parameter [4]
Description
-15
Min
Max
Unit
Read Cycle
tRC
Read cycle time
15
–
ns
tAA
Address to data valid
–
15
ns
tOHA
Data hold from address change
3
–
ns
tACE
CE LOW to data valid
–
15
ns
tDOE
OE LOW to data valid
–
7
ns
[4]
0
–
ns
Z[5, 6]
–
7
ns
tLZOE
tHZOE
OE LOW to low Z
OE HIGH to high
Z[5]
tLZCE
CE LOW to low
3
–
ns
tHZCE
CE HIGH to high Z[5, 6]
–
7
ns
tPU
CE LOW to power up
0
–
ns
tPD
CE HIGH to power down
–
15
ns
tDBE
Byte enable to data valid
–
7
ns
tLZBE
Byte enable to low Z[5]
0
–
ns
–
7
ns
tHZBE
Write Cycle
Byte disable to high
Z[5, 6]
[7, 8]
tWC
Write cycle time
15
–
ns
tSCE
CE LOW to write end
10
–
ns
tAW
Address setup to write end
10
–
ns
tHA
Address hold from write end
0
–
ns
tSA
Address setup to write start
0
–
ns
tPWE
WE pulse width
12
–
ns
tSD
Data setup to write end
8
–
ns
tHD
Data hold from write end
0
–
ns
Z[5]
tLZWE
WE HIGH to low
3
–
ns
tHZWE
WE LOW to high Z[5, 6]
–
7
ns
tBW
Byte enable to write end
9
–
ns
Notes
4. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5 V, input pulse levels of 0 to 3.0 V, and output loading of the specified IOL/IOH
and 30 pF load capacitance.
5. At any temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, tHZBE is less than tLZBE, and tHZWE is less than tLZWE for any device.
6. tHZOE, tHZBE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (b) of Figure 2 on page 6. Transition is measured 500 mV from steady-state
voltage.
7. The internal write time of the memory is defined by the overlap of CE LOW, WE LOW, and BHE / BLE LOW. CE, WE, and BHE / BLE must be LOW to initiate a write,
and the transition of these signals can terminate the write. The input data setup and hold timing should be referenced to the leading edge of the signal that terminates
the write.
8. The minimum write cycle pulse width for the Write Cycle No. 3 (WE Controlled, OE LOW) should be equal to sum of tSD and tHZWE.
Document Number: 001-06494 Rev. *J
Page 7 of 16
CY7C1021BN
Switching Waveforms
Figure 3. Read Cycle No. 1 [9, 10]
tRC
ADDRESS
tOHA
DATA OUT
tAA
PREVIOUS DATA VALID
DATA VALID
Figure 4. Read Cycle No. 2 (OE Controlled) [10, 11]
ADDRESS
tRC
CE
tACE
OE
tHZOE
tDOE
BHE, BLE
tLZOE
tHZCE
tDBE
tLZBE
DATA OUT
HIGH IMPEDANCE
tLZCE
VCC
SUPPLY
CURRENT
tHZBE
DATA VALID
HIGH
IMPEDANCE
tPD
tPU
50%
50%
IICC
CC
IISB
SB
Notes
9. Device is continuously selected. OE, CE, BHE, and BHE = VIL.
10. WE is HIGH for read cycle.
11. Address valid prior to or coincident with CE transition LOW.
Document Number: 001-06494 Rev. *J
Page 8 of 16
CY7C1021BN
Switching Waveforms (continued)
Figure 5. Write Cycle No. 1 (CE Controlled) [12, 13]
tWC
ADDRESS
CE
tSA
tSCE
tAW
tHA
tPWE
WE
tBW
BHE, BLE
tSD
tHD
DATA I/O
Figure 6. Write Cycle No. 2 (BLE or BHE Controlled)
tWC
ADDRESS
BHE, BLE
tSA
tBW
tAW
tHA
tPWE
WE
tSCE
CE
tSD
tHD
DATA I/O
Notes
12. Data I/O is high impedance if OE or BHE and/or BLE= VIH.
13. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state.
Document Number: 001-06494 Rev. *J
Page 9 of 16
CY7C1021BN
Switching Waveforms (continued)
Figure 7. Write Cycle No. 3 (WE Controlled, OE LOW)
tWC
ADDRESS
tSCE
CE
tAW
tHA
tSA
tPWE
WE
tBW
BHE, BLE
tHZWE
tSD
tHD
DATA I/O
tLZWE
Document Number: 001-06494 Rev. *J
Page 10 of 16
CY7C1021BN
Truth Table
CE
OE
WE
BLE
BHE
I/O1–I/O8
I/O9–I/O16
H
X
X
X
X
High Z
High Z
L
L
H
L
L
Data out
Data out
L
H
Data out
H
L
L
L
X
L
Mode
Power down
Power
Standby (ISB)
Read - All bits
Active (ICC)
High Z
Read - Lower bits only
Active (ICC)
High Z
Data out
Read - Upper bits only
Active (ICC)
L
Data In
Data In
Write - All bits
Active (ICC)
L
H
Data In
High Z
Write - Lower bits only
Active (ICC)
H
L
High Z
Data In
Write - Upper bits only
Active (ICC)
L
H
H
X
X
High Z
High Z
Selected, outputs disabled
Active (ICC)
L
X
X
H
H
High Z
High Z
Selected, outputs disabled
Active (ICC)
Document Number: 001-06494 Rev. *J
Page 11 of 16
CY7C1021BN
Ordering Information
Cypress offers other versions of this product type in many different configurations and features. The following table contains only the
list of parts that are currently available. For a complete listing of all options, refer to the product summary page at
http://www.cypress.com/products or contact your local sales representative.
Cypress maintains a worldwide network of offices, solution centers, manufacturers’ representatives and distributors. To find the office
closest to you, visit us at http://www.cypress.com/go/datasheet/offices.
Speed
(ns)
15
Ordering Code
Package
Diagram
Package Type
Operating
Range
CY7C1021BNL-15VXC
51-85082 44-pin (400-mil) Molded SOJ (Pb-free)
Commercial
CY7C1021BNL-15ZXI
51-85087 44-pin TSOP Type II (Pb-free)
Industrial
CY7C1021BNL-15ZSXA
51-85087 44-pin TSOP Type II (Pb-free)
Automotive-A
Automotive-E
CY7C1021BN-15ZSXE
Ordering Code Definitions
CY 7 C 1 02 1
X
BN L - 15 XX X X
Temperature Range: X = C or I or A or E
C = Commercial; I = Industrial; A = Automotive-A; E = Automotive-E
Pb-free
Package Type: XX = V or Z or ZS
V = 44-pin (400-mil) Molded SOJ
Z or ZS = 44-pin TSOP Type II
Speed: 15 ns
Low Power
BN = 250 nm Technology
X = blank or 1
blank = 12 ns or 15 ns; 1 = 10 ns
Bus Width: × 16 bits
02 = 2-Mbit density
1 = Fast Asynchronous SRAM family
Technology Code: C = CMOS
Marketing Code: 7 = SRAM
Company ID: CY = Cypress
Document Number: 001-06494 Rev. *J
Page 12 of 16
CY7C1021BN
Package Diagrams
Figure 8. 44-pin SOJ (400 Mils) V44.4 Package Outline, 51-85082
51-85082 *E
Figure 9. 44-pin TSOP Z44-II Package Outline, 51-85087
51-85087 *E
Document Number: 001-06494 Rev. *J
Page 13 of 16
CY7C1021BN
Acronyms
Acronym
Document Conventions
Description
Units of Measure
BHE
Byte High Enable
BLE
Byte Low Enable
°C
degree Celsius
CE
Chip Enable
MHz
megahertz
CMOS
Complementary Metal Oxide Semiconductor
A
microampere
I/O
Input/Output
mA
milliampere
OE
Output Enable
mm
millimeter
SOJ
Small Outline J-lead
mW
milliwatt
SRAM
Static Random Access Memory
ns
nanosecond
TSOP
Thin Small Outline Package
ohm
TTL
Transistor-Transistor Logic
%
percent
WE
Write Enable
pF
picofarad
V
volt
W
watt
Document Number: 001-06494 Rev. *J
Symbol
Unit of Measure
Page 14 of 16
CY7C1021BN
Document History Page
Document Title: CY7C1021BN, 1-Mbit (64 K × 16) Static RAM
Document Number: 001-06494
Rev.
ECN No.
Submission
Date
Orig. of
Change
Description of Change
**
423877
See ECN
NXR
New data sheet.
*A
505726
See ECN
NXR
Removed IOS parameter from DC Electrical Characteristics table.
Updated Ordering Information (Added Automotive products).
*B
2897061
03/22/10
AJU
Updated Ordering Information (Removed obsolete parts).
Updated Package Diagrams.
*C
2947254
06/08/10
RAME
Updated Pin Definitions (Replaced “Byte write select inputs” with “Byte Enable
select inputs” in description of pin BHE, BLE).
Updated AC Test Loads and Waveforms (Updated Figure 2 (Added ohm ()
symbol in Thevenin equivalent circuit)).
Updated Switching Characteristics (Updated Note 5 (Included tHZBE and tLZBE
in the note)).
Updated Ordering Information (Included operating range for
CY7C1021BNL-15ZXI in ordering information table).
*D
3328634
26/07/2011
AJU
Updated Features (Removed the information associated with speed bins -10
and -12).
Removed the note “For best practice recommendations, refer to the Cypress
application note, SRAM System Design Guidelines-AN1064.” in page 1 and its
reference in Functional Description.
Updated Functional Description (Removed the information associated with
speed bins -10 and -12).
Updated Selection Guide (Removed the information associated with speed
bins -10 and -12).
Updated Electrical Characteristics (Removed the information associated with
speed bins -10 and -12).
Updated Switching Characteristics (Removed the information associated with
speed bins -10 and -12).
Updated Ordering Information.
Added Acronyms and Units of Measure.
Updated to new template.
*E
4125119
09/16/2013
VINI
Updated Package Diagrams:
spec 51-85082 – Changed revision from *C to *E.
spec 51-85087 – Changed revision from *C to *E.
Updated to new template.
Completing Sunset Review.
*F
4545523
10/20/2014
VINI
Updated Document Title to read as “CY7C1021BN, 1-Mbit (64 K × 16) Static RAM”.
Removed CY7C10211BN related information in all instances across the document.
Updated Switching Characteristics:
Removed “CY7C1021B” and retained “-15” in column heading “CY7C1021B-15”.
Added Note 8 and referred the same note in “Write Cycle”.
Added tPWE parameter and its details.
Completing Sunset Review.
*G
4557296
10/31/2014
VINI
Updated Switching Characteristics:
Updated minimum and maximum values of tPWE parameter.
*H
4578500
12/16/2014
VINI
Updated Ordering Information:
Removed the prune part number CY7C1021BN-15VXE.
*I
4984333
10/23/2015
NILE
Updated to new template.
Completing Sunset Review.
*J
5979549
11/29/2017
Document Number: 001-06494 Rev. *J
AESATMP9 Updated logo and copyright.
Page 15 of 16
CY7C1021BN
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at Cypress Locations.
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© Cypress Semiconductor Corporation, 2006-2017. This document is the property of Cypress Semiconductor Corporation and its subsidiaries, including Spansion LLC ("Cypress"). This document,
including any software or firmware included or referenced in this document ("Software"), is owned by Cypress under the intellectual property laws and treaties of the United States and other countries
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TO THE EXTENT PERMITTED BY APPLICABLE LAW, CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS DOCUMENT OR ANY SOFTWARE
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the responsibility of the user of this document to properly design, program, and test the functionality and safety of any application made of this information and any resulting product. Cypress products
are not designed, intended, or authorized for use as critical components in systems designed or intended for the operation of weapons, weapons systems, nuclear installations, life-support devices or
systems, other medical devices or systems (including resuscitation equipment and surgical implants), pollution control or hazardous substances management, or other uses where the failure of the
device or system could cause personal injury, death, or property damage ("Unintended Uses"). A critical component is any component of a device or system whose failure to perform can be reasonably
expected to cause the failure of the device or system, or to affect its safety or effectiveness. Cypress is not liable, in whole or in part, and you shall and hereby do release Cypress from any claim,
damage, or other liability arising from or related to all Unintended Uses of Cypress products. You shall indemnify and hold Cypress harmless from and against all claims, costs, damages, and other
liabilities, including claims for personal injury or death, arising from or related to any Unintended Uses of Cypress products.
Cypress, the Cypress logo, Spansion, the Spansion logo, and combinations thereof, WICED, PSoC, CapSense, EZ-USB, F-RAM, and Traveo are trademarks or registered trademarks of Cypress in
the United States and other countries. For a more complete list of Cypress trademarks, visit cypress.com. Other names and brands may be claimed as property of their respective owners.
Document Number: 001-06494 Rev. *J
Revised November 29, 2017
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