CY7C1021D-10VXI

CY7C1021D 1-Mbit (64K x 16) Static RAM Features • Pin-and function-compatible with CY7C1021B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS Standby Power — ISB2 = 3 mA • 2.0V Data Retention • Automatic power-down when deselected • CMOS for optimum speed/power • Independent control of upper and lower bits • Available in Pb-free 44-pin 400-Mil wide Molded SOJ and 44-pin TSOP II packages Functional Description [1] The CY7C1021D is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. The input/output pins (IO0 through IO15) are placed in a high-impedance state when: • • • • Deselected (CE HIGH) Outputs are disabled (OE HIGH) BHE and BLE are disabled (BHE, BLE HIGH) When the write operation is active (CE LOW, and WE LOW) Write to the device by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from IO pins (IO0 through IO7), is written into the location specified on the address pins (A0 through A15). If Byte High Enable (BHE) is LOW, then data from IO pins (IO8 through IO15) is written into the location specified on the address pins (A0 through A15). Read from the device by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appears on IO0 to IO7. If Byte High Enable (BHE) is LOW, then data from memory appears on IO8 to IO15. See the “Truth Table” on page 8 for a complete description of read and write modes. Logic Block Diagram DATA IN DRIVERS A7 A6 A5 A4 A3 A2 A1 A0 ROW DECODER 64K x 16 RAM Array SENSE AMPS IO0–IO7 IO8–IO15 COLUMN DECODER BHE WE CE OE BLE Note 1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com. A8 A9 A10 A11 A12 A13 A14 A15 Cypress Semiconductor Corporation Document #: 38-05462 Rev. *E • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised February 22, 2007 [+] [+] Feedback CY7C1021D Pin Configuration [2] SOJ/TSOP II Top View A4 A3 A2 A1 A0 CE IO0 IO1 IO2 IO3 VCC VSS IO4 IO5 IO6 IO7 WE A15 A14 A13 A12 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE BHE BLE IO15 IO14 IO13 IO12 VSS VCC IO11 IO10 IO9 IO8 NC A8 A9 A10 A11 NC Selection Guide –10 (Industrial) Maximum Access Time Maximum Operating Current Maximum CMOS Standby Current 10 80 3 –12 (Automotive) [3] 12 120 15 Unit ns mA mA Notes 2. NC pins are not connected on the die. 3. Automotive Product Information is Preliminary. Document #: 38-05462 Rev. *E Page 2 of 11 [+] [+] Feedback CY7C1021D Maximum Ratings Exceeding the maximum ratings may impair the useful life of the device. These user guidelines are not tested. Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage on VCC to Relative GND [4] ... –0.5V to +6.0V DC Voltage Applied to Outputs in High-Z State [4] .....................................–0.5V to VCC+0.5V DC Input Voltage [4]..................................–0.5V to VCC+0.5V Current into Outputs (LOW) ........................................ 20 mA Static Discharge Voltage........................................... > 2001V (per MIL-STD-883, Method 3015) Latch-up Current .................................................... > 200 mA Operating Range Range Industrial Automotive Ambient Temperature –40°C to +85°C –40°C to +125°C VCC 5V ± 10% Speed 10 ns 12 ns Electrical Characteristics (Over the Operating Range) Parameter VOH VOL VIH VIL IIX IOZ ICC Description Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage [4] Input Leakage Current Output Leakage Current VCC Operating Supply Current GND < VI < VCC GND < VI < VCC, Output Disabled VCC = Max, IOUT = 0 mA, f = fmax = 1/tRC 100 MHz 83 MHz 66 MHz 40 MHz ISB1 ISB2 Automatic CE Power-down Current —TTL Inputs Automatic CE Power-down Current —CMOS Inputs Max VCC, CE > VIH VIN > VIH or VIN < VIL, f = fmax Max VCC, CE > VCC – 0.3V, VIN > VCC – 0.3V, or VIN < 0.3V, f = 0 Test Conditions IOH = –4.0 mA IOL = 8.0 mA 2.2 −0.5 −1 −1 –10 (Industrial) Min 2.4 0.4 VCC + 0.5V 0.8 +1 +1 80 72 58 37 10 3 2.0 –0.5 –5 –5 Max –12 (Automotive) Min 2.4 0.4 VCC + 0.5V 0.8 +5 +5 120 100 63 50 15 Max Unit V V V V µA µA mA mA mA mA mA mA Note 4. VIL (min) = –2.0V and VIH(max) = VCC + 1V for pulse durations of less than 5 ns. Document #: 38-05462 Rev. *E Page 3 of 11 [+] [+] Feedback CY7C1021D Capacitance [5] Parameter CIN COUT Description Input Capacitance Output Capacitance Test Conditions TA = 25°C, f = 1 MHz, VCC = 5.0V Max 8 8 Unit pF pF Thermal Resistance [5] Parameter ΘJA ΘJC Description Thermal Resistance (Junction to Ambient) Thermal Resistance (Junction to Case) Test Conditions Still Air, soldered on a 3 × 4.5 inch, four-layer printed circuit board SOJ 59.52 36.75 TSOP II 53.91 21.24 Unit °C/W °C/W AC Test Loads and Waveforms [6] ALL INPUT PULSES 90% 10% 90% 10% Z = 50Ω OUTPUT 50 Ω * CAPACITIVE LOAD CONSISTS OF ALL COMPONENTS OF THE TEST ENVIRONMENT 1.5V 3.0V 30 pF* GND Rise Time: ≤ 3 ns (a) (b) Fall Time: ≤ 3 ns High-Z characteristics: 5V OUTPUT INCLUDING JIG AND SCOPE 5 pF R2 255Ω R1 480Ω (c) Notes 5. Tested initially and after any design or process changes that may affect these parameters. 6. AC characteristics (except High-Z) are tested using the load conditions shown in Figure (a). High-Z characteristics are tested for all speeds using the test load shown in Figure (c). Document #: 38-05462 Rev. *E Page 4 of 11 [+] [+] Feedback CY7C1021D Switching Characteristics (Over the Operating Range) [7] Parameter Read Cycle tpower [8] tRC tAA tOHA tACE tDOE tLZOE tHZOE tLZCE tHZCE tPU tPD tDBE tLZBE tHZBE Write Cycle tWC tSCE tAW tHA tSA tPWE tSD tHD tLZWE tHZWE tBW [12] Description –10 (Industrial) Min 100 10 10 3 10 5 0 5 3 5 0 10 5 0 5 10 7 7 0 0 7 6 0 3 5 7 Max –12 (Automotive) Min 100 12 12 3 12 6 0 6 3 6 0 12 6 0 6 12 10 10 0 0 10 7 0 3 6 10 Max Unit VCC(typical) to the first access Read Cycle Time Address to Data Valid Data Hold from Address Change CE LOW to Data Valid OE LOW to Data Valid OE LOW to Low Z CE LOW to Low Z [9] [9, 10] µs ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns OE HIGH to High Z CE HIGH to High Z [9] [9, 10] CE LOW to Power-Up CE HIGH to Power-Down Byte Enable to Data Valid Byte Enable to Low Z Byte Disable to High Z Write Cycle Time CE LOW to Write End Address Set-Up to Write End Address Hold from Write End Address Set-Up to Write Start WE Pulse Width Data Set-Up to Write End Data Hold from Write End WE HIGH to Low Z WE LOW to High Z [9] [9, 10] Byte Enable to End of Write Notes 7. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5 V, input pulse levels of 0 to 3.0 V, and output loading of the specified IOL/IOH and 30-pF load capacitance. 8. tPOWER gives the minimum amount of time that the power supply should be at typical VCC values until the first memory access can be performed. 9. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 10. tHZOE, tHZBE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in (c) of “AC Test Loads and Waveforms [6]” on page 4. Transition is measured when the outputs enter a high impedance state. 11. This parameter is guaranteed by design and is not tested. 12. The internal write time of the memory is defined by the overlap of CE LOW, WE LOW and BHE/BLE LOW. CE, WE and BHE/BLE must be LOW to initiate a write, and the transition of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. Document #: 38-05462 Rev. *E Page 5 of 11 [+] [+] Feedback CY7C1021D Data Retention Characteristics (Over the Operating Range) Parameter VDR ICCDR tCDR tR [4] Description VCC for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time Conditions VCC = VDR = 2.0 V, CE > VCC – 0.3 V, Industrial VIN > VCC – 0.3 V or VIN < 0.3 V Automotive Min 2.0 Max 3 15 Unit V mA mA ns ns 0 tRC [13] Data Retention Waveform DATA RETENTION MODE VCC CE 4.5V tCDR VDR > 2V 4.5V tR Switching Waveforms Read Cycle No. 1 (Address Transition Controlled) [14, 15] tRC RC ADDRESS tOHA DATA OUT PREVIOUS DATA VALID tAA DATA VALID Read Cycle No. 2 (OE Controlled) [15, 16] ADDRESS tRC CE tACE OE tDOE BHE, BLE tLZOE tDBE tLZBE DATA OUT VCC SUPPLY CURRENT HIGH IMPEDANCE tLZCE tPU 50% DATA VALID tPD 50% tHZCE tHZBE tHZOE HIGH IMPEDANCE ICC ISB Notes 13. Full device operation requires linear VCC ramp from VDR to VCC(min) > 50 µs or stable at VCC(min) > 50 µs. 14. Device is continuously selected. OE, CE, BHE and/or BLE = VIL. 15. WE is HIGH for read cycle. 16. Address valid prior to or coincident with CE transition LOW. Document #: 38-05462 Rev. *E Page 6 of 11 [+] [+] Feedback CY7C1021D Switching Waveforms (continued) Write Cycle No. 1 (CE Controlled) [17, 18] tWC ADDRESS tSA CE tAW tSCE tHA tPWE WE t BW BHE, BLE tSD DATA IO tHD Write Cycle No. 2 (BLE or BHE Controlled) tWC ADDRESS BHE, BLE tSA tBW tAW tPWE WE tSCE CE tSD DATA IO tHD tHA Notes 17. Data IO is high impedance if OE or BHE and/or BLE = VIH. 18. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. Document #: 38-05462 Rev. *E Page 7 of 11 [+] [+] Feedback CY7C1021D Switching Waveforms (continued) Write Cycle No. 3 (WE Controlled, OE LOW) tWC ADDRESS tSCE CE tAW tSA WE tBW BHE, BLE tPWE tHA tHZWE DATA IO tSD tHD tLZWE Truth Table CE H L OE X L WE X H BLE X L L H L X L L L H L L H X H X X H BHE X L H L L H L X H IO0–IO7 High Z Data Out Data Out High Z Data In Data In High Z High Z High Z IO8–IO15 High Z Data Out High Z Data Out Data In High Z Data In High Z High Z Power-Down Read – All bits Read – Lower bits only Read – Upper bits only Write – All bits Write – Lower bits only Write – Upper bits only Selected, Outputs Disabled Selected, Outputs Disabled Mode Power Standby (ISB) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Ordering Information Speed (ns) 10 12 Ordering Code CY7C1021D-10VXI CY7C1021D-10ZSXI CY7C1021D-10ZSXE Package Diagram 51-85082 51-85087 51-85087 Package Type 44-pin (400-Mil) Molded SOJ (Pb-free) 44-pin TSOP Type II (Pb-free) 44-pin TSOP Type II (Pb-free) Automotive Operating Range Industrial Shaded areas contain advance information. Please contact your local Cypress sales representative for availability of these parts. Document #: 38-05462 Rev. *E Page 8 of 11 [+] [+] Feedback CY7C1021D Package Diagrams Figure 1. 44-pin (400-Mil) Molded SOJ, 51-85082 51-85082-*B Document #: 38-05462 Rev. *E Page 9 of 11 [+] [+] Feedback CY7C1021D Package Diagrams (continued) Figure 2. 44-Pin Thin Small Outline Package Type II, 51-85087 51-85087-*A All product and company names mentioned in this document may be the trademarks of their respective holders. Document #: 38-05462 Rev. *E Page 10 of 11 © Cypress Semiconductor Corporation, 2006-2007. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. [+] [+] Feedback CY7C1021D Document History Page Document Title: CY7C1021D, 1-Mbit (64K x 16) Static RAM Document Number: 38-05462 REV. ** *A *B ECN NO. Issue Date 201560 233695 263769 See ECN See ECN See ECN Orig. of Change SWI RKF RKF Description of Change Advance Information data sheet for C9 IPP DC parameters modified as per EROS (Spec # 01-02165) Pb-free Offering in the Ordering Information Added Data Retention Characteristics Table Added Tpower Spec in Switching Characteristics Table Shaded Ordering Information Reduced Speed bins to –10 and –12 ns Converted from Preliminary to Final Removed Commercial Operating range Added ICC values for the frequencies 83MHz, 66MHz and 40MHz Updated Thermal Resistance table Added Automotive Product Information Updated Ordering Information Table Changed Overshoot spec from VCC+2V to VCC+1V in footnote #4 Changed Commercial operating range ICC spec from 60 mA to 80 mA for 100MHz, 55 mA to 72 mA for 83MHz, 45 mA to 58 mA for 66MHz, 30 mA to 37 mA for 40MHz Changed Automotive operating range ICC spec from 100 mA to 120 mA for 83MHz, 90 mA to 100 mA for 66MHz, 60 mA to 63 mA for 40MHz *C *D 307601 520647 See ECN See ECN RKF VKN *E 802877 See ECN VKN Document #: 38-05462 Rev. *E Page 11 of 11 [+] [+] Feedback