CY7C1034DV33

PRELIMINARY CY7C1034DV33 6-Mbit (256K X 24) Static RAM Features • High speed — tAA = 8 ns • Low active power — ICC = 185 mA @ 8 ns • Low CMOS standby power — ISB2 = 25 mA • Operating voltages of 3.3 ± 0.3V • 2.0V data retention • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE1, CE2 and CE3 features • Available in Pb-Free Standard 119-ball PBGA Functional Description The CY7C1034DV33 is a high-performance CMOS static RAM organized as 256K words by 24 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. To write to the device, enable the chip (CE1 LOW, CE2 HIGH and CE3 LOW) while forcing the Write Enable (WE) input LOW. To read from the device, enable the chip by taking CE1 LOW CE2 HIGH and CE3 LOW while forcing the Output Enable (OE) LOW and the Write Enable (WE) HIGH. See the truth table at the back of this data sheet for a complete description of Read and Write modes. The 24 I/O pins (I/O0–I/O23) are placed in a high-impedance state when the device is deselected (CE1 HIGH/CE2 LOW/CE3 HIGH) or when the output enable (OE) is HIGH during a Write operation. (CE1 LOW, CE2 HIGH, CE3 LOW and WE LOW). Functional Block Diagram INPUT BUFFER A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 ROW DECODER 256K x 24 ARRAY SENSE AMPS I/O0–I/O23 COLUMN DECODER CONTROL LOGIC CE1, CE2, CE3 WE OE Selection Guide –8 Maximum Access Time Maximum Operating Current Maximum CMOS Standby Current 8 185 25 Unit ns mA mA A10 A11 A 12 A 13 A 14 A15 A16 A17 Cypress Semiconductor Corporation Document #: 001-08351 Rev. *A • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised September 4, 2006 [+] [+] Feedback PRELIMINARY Pin Configurations[1] 119 PBGA Top View CY7C1034DV33 1 A B C D E F G H J K L M N P R T U NC NC I/O12 I/O13 I/O14 I/O15 I/O16 I/O17 NC I/O18 I/O19 I/O20 I/O21 I/O22 I/O23 NC NC 2 A A NC VDD VSS VDD VSS VDD VSS VDD VSS VDD VSS VDD NC A A 3 A A CE2 VSS VDD VSS VDD VSS VDD VSS VDD VSS VDD VSS NC A A 4 A CE1 A VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC WE OE 5 A A CE3 VSS VDD VSS VDD VSS VDD VSS VDD VSS VDD VSS NC A A 6 A A NC VDD VSS VDD VSS VDD VSS VDD VSS VDD VSS VDD NC A A 7 NC NC I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 NC I/O6 I/O7 I/O8 I/O9 I/O10 I/O11 NC NC Note: 1. NC pins are not connected on the die Document #: 001-08351 Rev. *A Page 2 of 8 [+] [+] Feedback PRELIMINARY Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage on VCC Relative to GND[2] .... –0.5V to +4.6V DC Voltage Applied to Outputs in High-Z State[2] .................................... –0.5V to VCC + 0.5V DC Input Voltage[2] ................................–0.5V to VCC + 0.5V Range Commercial CY7C1034DV33 Current into Outputs (LOW) ........................................ 20 mA Static Discharge Voltage ............ ...............................>2001V (per MIL-STD-883, Method 3015) Latch-up Current ..................................................... >200 mA Operating Range Ambient Temperature 0°C to +70°C VCC 3.3V ± 0.3V DC Electrical Characteristics Over the Operating Range –8 Parameter VOH VOL VIH VIL[2] IIX IOZ ICC ISB1 ISB2 Description Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Leakage Current Output Leakage Current VCC Operating Supply Current Automatic CE Power-down Current —TTL Inputs Automatic CE Power-down Current —CMOS Inputs GND < VI < VCC GND < VOUT < VCC, Output Disabled VCC = Max., f = fMAX = 1/tRC, IOUT = 0 mA CMOS levels Max. VCC, CE > VIH VIN > VIH or VIN < VIL, f = fMAX Max. VCC, CE > VCC – 0.3V, VIN > VCC – 0.3V, or VIN < 0.3V, f = 0 Test Conditions[7] Min. 2.4 0.4 2.0 –0.3 –1 –1 VCC + 0.3 0.8 +1 +1 185 30 25 Max. Unit V V V V µA µA mA mA mA VCC = Min., IOH = –4.0 mA VCC = Min., IOL = 8.0 mA Capacitance[3] Parameter CIN COUT Description Input Capacitance I/O Capacitance Test Conditions TA = 25°C, f = 1 MHz, VCC = 3.3V Max. 8 10 Unit pF pF Thermal Resistance[3] Parameter ΘJA ΘJC Description Test Conditions PBGA TBD TBD Unit °C/W °C/W Thermal Resistance (Junction to Ambient) Still Air, soldered on a 3 × 4.5 inch, four-layer printed circuit board Thermal Resistance (Junction to Case) AC Test Loads and Waveforms[4] 50Ω OUTPUT Z0 = 50Ω VTH = 1.5V 30 pF* * Capacitive Load consists of all components of the test environment. 3.0V GND Rise time > 1 V/ns ALL INPUT PULSES 90% 10% 90% 10% 3.3V OUTPUT 5 pF INCLUDING JIG AND SCOPE R2 351Ω R1 317Ω (a) (b) (c) Fall time: > 1 V/ns Notes: 2. VIL (min.) = –2.0V and VIH(max) = VCC + 2V for pulse durations of less than 20 ns. 3. Tested initially and after any design or process changes that may affect these parameters. 4. Valid SRAM operation does not occur until the power supplies have reached the minimum operating VDD (3.0V). 100 µs (tpower) after reaching the minimum operating VDD, normal SRAM operation can begin including reduction in VDD to the data retention (VCCDR, 2.0V) voltage. Document #: 001-08351 Rev. *A Page 3 of 8 [+] [+] Feedback PRELIMINARY AC Switching Characteristics Over the Operating Range Parameter Read Cycle tpower[6] tRC tAA tOHA tACE tDOE tLZOE tHZOE tLZCE tHZCE tPU tPD Write Cycle tWC tSCE tAW tHA tSA tPWE tSD tHD tLZWE tHZWE [10, 11] [5] CY7C1034DV33 –8 Description VCC(typical) to the first access Read Cycle Time Address to Data Valid Data Hold from Address Change CE active LOW to Data Valid OE LOW to Data Valid OE LOW to Low-Z[8] OE HIGH to High-Z[8] Low-Z[7, 8] High-Z[7, 8] 0 8 8 6 6 0 0 6 5 0 3 5 Power-down[7, 9] 3 5 CE active LOW to 1 5 [7] Min. 100 8 Max. Unit µs ns 8 3 8 5 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns CE deselect HIGH to CE deselect HIGH to Write Cycle Time CE active LOW to Power-up[7, 9] CE active LOW to Write End[7] Address Set-up to Write End Address Hold from Write End Address Set-up to Write Start WE Pulse Width Data Set-up to Write End Data Hold from Write End WE HIGH to Low-Z[8] WE LOW to High-Z[8] Notes: 5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V. Test conditions for the read cycle use output loading as shown in part a) of the AC test loads, unless specified otherwise. 6. tPOWER gives the minimum amount of time that the power supply should be at typical VCC values until the first memory access is performed. 7. CE refers to a combination of CE1, CE2, and CE3. CE is active LOW when CE1 is LOW and CE2 is HIGH and CE3 is LOW. CE is deselect HIGH when CE1 is HIGH or CE2 is LOW or CE3 is HIGH 8. tHZOE, tHZCE, tHZWE, and tLZOE, tLZCE, tLZWE, are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±200 mV from steady-state voltage. 9. These parameters are guaranteed by design and are not tested. 10. The internal write time of the memory is defined by the overlap of CE1 LOW and CE2 HIGH and CE3 LOW and WE LOW. The chip enables must be active and WE must be LOW to initiate a write, and the transition of any of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. 11. The minimum write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD. Document #: 001-08351 Rev. *A Page 4 of 8 [+] [+] Feedback PRELIMINARY Data Retention Characteristics (Over the Operating Range) Parameter VDR ICCDR tCDR[3] tR[12] Description VCC for Data Retention Data Retention Current VCC = 2V , CE1 > VCC – 0.2V, CE2 < 0.2V, VIN > VCC – 0.2V or VIN < 0.2V 0 tRC Conditions Min. 2 CY7C1034DV33 Typ. Max. 25 Unit V mA Chip Deselect to Data Retention Time Operation Recovery Time ns ns Data Retention Waveform DATA RETENTION MODE VCC 3V tCDR CE VDR > 2V 3V tR Switching Waveforms Read Cycle No. 1[13, 14] tRC ADDRESS tAA tOHA DATA OUT PREVIOUS DATA VALID DATA VALID Read Cycle No. 2 (OE Controlled)[7, 14, 15] ADDRESS tRC CE tACE OE tDOE DATA OUT VCC SUPPLY CURRENT tLZOE HIGH IMPEDANCE tLZCE tPU 50% tHZOE tHZCE DATA VALID tPD 50% ISB ICC HIGH IMPEDANCE Notes: 12. Full device operation requires linear VCC ramp from VDR to VCC(min.) > 50 µs or stable at VCC(min.) > 50 µs 13. Device is continuously selected. OE, CE = VIL. 14. WE is HIGH for read cycle. 15. Address valid prior to or coincident with CE transition LOW. Document #: 001-08351 Rev. *A Page 5 of 8 [+] [+] Feedback PRELIMINARY Switching Waveforms (continued) Write Cycle No. 1 (CE Controlled)[7, 16, 17] tWC ADDRESS tSCE CE tSA tAW tPWE WE tSD DATA I/O DATA VALID tHD tSCE tHA CY7C1034DV33 Write Cycle No. 2 (WE Controlled, OE HIGH During Write)[16, 17] tWC ADDRESS tSCE CE tAW tSA WE tPWE tHA OE tSD DATA I/O NOTE 18 tHZOE DATAIN VALID tHD Write Cycle No. 3 (WE Controlled, OE LOW)[7, 17] tWC ADDRESS tSCE CE tAW tSA WE tSD DATA I/O NOTE 18 tHZWE Notes: 16. Data I/O is high impedance if OE = VIH. 17. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. 18. During this period the I/Os are in the output state and input signals should not be applied. tHA tPWE tHD DATA VALID tLZWE Document #: 001-08351 Rev. *A Page 6 of 8 [+] [+] Feedback PRELIMINARY Truth Table CE1 H X X L L L CE2 X L X H H H CE3 X X H L L L OE X X X L X H WE X X X H L H High-Z High-Z High-Z Full Data Out Full Data In High-Z I/O0–I/O23 Power-down Power-down Power-down Read Write Mode CY7C1034DV33 Power Standby (ISB) Standby (ISB) Standby (ISB) Active (ICC) Active (ICC) Active (ICC) Selected, Outputs Disabled Ordering Information Speed (ns) 8 Ordering Code CY7C1034DV33-8BGXC Package Name 51-85115 Package Type Operating Range 119-ball Plastic Ball Grid Array (14 x 22 x 2.4 mm) (Pb-free) Commercial Package Diagram 119-ball PBGA (14 x 22 x 2.4 mm) (51-85115) 51-85115-*B All product and company names mentioned in this document may be the trademarks of their respective holders. Document #: 001-08351 Rev. *A Page 7 of 8 © Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. [+] [+] Feedback PRELIMINARY Document History Page Document Title: CY7C1034DV33 6-Mbit (256K X 24) Static RAM Document Number: 001-08351 REV. ** *A ECN NO. 469517 499604 Issue Date See ECN See ECN Orig. of Change NXR NXR New Data Sheet CY7C1034DV33 Description of Change Added note# 1 for NC pins Changed ICC spec from 150 mA to 185 mA Updated Test Condition for ICC in DC Electrical Characteristics table Added note for tACE, tLZCE, tHZCE, tPU, tPD, tSCE in AC Switching Characteristics Table on page# 4 Document #: 001-08351 Rev. *A Page 8 of 8 [+] [+] Feedback