CY7C1041CV33-20ZI

CY7C1041CV33 4-Mbit (256K x 16) Static RAM Functional Description[1] Features • Pin equivalent to CY7C1041BV33 The CY7C1041CV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. • Temperature Ranges Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte LOW Enable (BLE) is LOW, then data from I/O pins (I/O0–I/O7), is written into the location specified on the address pins (A0–A17). If Byte HIGH Enable (BHE) is LOW, then data from I/O pins (I/O8–I/O15) is written into the location specified on the address pins (A0–A17). — Commercial: 0°C to 70°C — Industrial: –40°C to 85°C — Automotive: –40°C to 125°C • High speed — tAA = 10 ns • Low active power — 324 mW (max.) • 2.0V data retention • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE and OE features Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte LOW Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O0 – I/O7. If Byte HIGH Enable (BHE) is LOW, then data from memory will appear on I/O8 to I/O15. See the truth table at the back of this data sheet for a complete description of Read and Write modes. The input/output pins (I/O0–I/O15) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a Write operation (CE LOW, and WE LOW). The CY7C1041CV33 is available in a standard 44-pin 400-mil-wide body width SOJ and 44-pin TSOP II package with center power and ground (revolutionary) pinout, as well as a 48-ball fine-pitch ball grid array (FBGA) package. Logic Block Diagram Pin Configuration SOJ TSOP II Top View 256K × 16 ARRAY 1024 x 4096 SENSE AMPS A0 A1 A2 A3 A4 A5 A6 A7 A8 ROW DECODER INPUT BUFFER I/O0–I/O7 I/O8–I/O15 A9 A10 A 11 A 12 A 13 A14 A15 A16 A17 COLUMN DECODER BHE WE CE OE BLE A0 A1 A2 A3 A4 CE I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 WE A5 A6 A7 A8 A9 1 44 2 3 43 42 4 41 40 39 38 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A17 A16 A15 OE BHE BLE I/O15 I/O14 I/O13 I/O12 VSS VCC I/O11 I/O10 I/O9 I/O8 NC A14 A13 A12 A11 A10 Notes: 1. For guidelines on SRAM system design, please refer to the “System Design Guidelines” Cypress application note, available on the internet at www.cypress.com. Cypress Semiconductor Corporation Document #: 38-05134 Rev. *G • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised March 15, 2006 CY7C1041CV33 Selection Guide -10 -12 -15 -20 Unit 10 12 15 20 ns Commercial 90 85 80 75 mA Industrial 100 95 90 85 mA Maximum Access Time Maximum Operating Current Maximum CMOS Standby Current Automotive - - - 90 mA Commercial/ Industrial 10 10 10 10 mA Automotive - - - 15 mA Pin Configurations 48-ball Mini FBGA (Top View) Document #: 38-05134 Rev. *G 1 2 3 4 5 6 BLE OE A0 A1 A2 NC A I/O0 BHE A3 A4 CE I/O8 B I/O1 I/O 2 A5 A6 I/O10 I/O9 C VSS I/O3 A17 A7 I/O11 VCC D VCC I/O4 NC A16 I/O12 VSS E I/O6 I/O5 A14 A15 I/O13 I/O14 F I/O7 NC A12 A13 WE I/O15 G NC A8 A9 A10 A11 NC H Page 2 of 12 CY7C1041CV33 Pin Definitions Pin Name 44-SOJ, 44-TSOP Pin Number 48-ball FBGA Pin Number I/O Type Description Input Address Inputs used to select one of the address locations. A0–A17 1–5, 18–27, 42–44 A3, A4, A5, B3, B4, C3, C4, D4, H2, H3, H4, H5, G3, G4, F3, F4, E4, D3 I/O0–I/O15 7–10,13–16, 29–32, 35–38 B1, C1, C2, D2, E2, F2, F1, G1, B6, C6, C5, D5, E5, F5, F6, G6 Input/Output Bidirectional Data I/O lines. Used as input or output lines depending on operation NC[2] 28 A6, E3, G2, H1, H6 No Connect WE 17 G5 Input/Control Write Enable Input, active LOW. When selected LOW, a WRITE is conducted. When selected HIGH, a READ is conducted. CE 6 B5 Input/Control Chip Enable Input, active LOW. When LOW, selects the chip. When HIGH, deselects the chip. BHE, BLE 40, 39 B2, A1 Input/Control Byte Write Select Inputs, active LOW. BHE controls I/O15–I/O8, BLE controls I/O7–I/O0 OE 41 A2 Input/Control Output Enable, active LOW. Controls the direction of the I/O pins. When LOW, the I/O pins are allowed to behave as outputs. When deasserted HIGH, I/O pins are three-stated, and act as input data pins. VSS 12, 34 D1, E6 VCC 11, 33 D6, E1 Ground No Connects. This pin is not connected to the die Ground for the device. Should be connected to ground of the system. Power Supply Power Supply inputs to the device. Note: 2. NC pins are not connected on the die. Document #: 38-05134 Rev. *G Page 3 of 12 CY7C1041CV33 Maximum Ratings Static Discharge Voltage............. ...............................>2001V (Above which the useful life may be impaired. For user guidelines, not tested.) (per MIL-STD-883, Method 3015) Storage Temperature ................................. –65°C to +150°C Latch-up Current...................................................... >200 mA Ambient Temperature with Power Applied............................................. –55°C to +125°C Operating Range Supply Voltage on VCC to Relative GND[3] .... –0.5V to +4.6V DC Voltage Applied to Outputs in High-Z State[3] ....................................–0.5V to VCC + 0.5V Range Ambient Temperature VCC Commercial 0°C to +70°C 3.3V ± 0.3V DC Input Voltage[3] .................................–0.5V to VCC + 0.5V Industrial –40°C to +85°C Current into Outputs (LOW) .........................................20 mA Automotive –40°C to +125°C DC Electrical Characteristics Over the Operating Range -10 Parameter Description Test Conditions -12 Min. Max. Min. Max. 2.4 Min. -20 Max. VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA VIH Input HIGH Voltage 2.0 VCC + 0.3 2.0 VCC + 0.3 2.0 VCC + 0.3 VIL[3] Input LOW Voltage –0.3 0.8 –0.3 0.8 –0.3 IIX Input Leakage Current GND < VI < VCC Com’l/Ind’l –1 +1 –1 +1 IOZ Output Leakage Current Com’l/Ind’l GND < VOUT < VCC, Automotive Output Disabled –1 +1 –1 +1 VCC Operating Supply Current VCC = Max., f = fMAX = 1/tRC ICC 2.4 -15 2.4 0.4 Min. Max. Unit 2.4 0.4 V 0.4 0.4 V 2.0 VCC + 0.3 V 0.8 –0.3 0.8 V –1 +1 –1 +1 µA –20 +20 µA –1 +1 –1 +1 µA –20 +20 µA Automotive Com’l 90 85 80 75 mA Ind’l 100 95 90 85 mA 90 mA Automatic CE Max. VCC, Com’l/Ind’l Power-down Current CE > VIH Automotive —TTL Inputs VIN > VIH or VIN < VIL, f = fMAX 40 40 40 40 mA 45 mA Automatic CE Max. VCC, Com’l/Ind’l Power-down Current CE > VCC – 0.3V, Automotive —CMOS Inputs VIN > VCC – 0.3V, or VIN < 0.3V, f = 0 10 10 mA 15 mA Automotive ISB1 ISB2 10 10 Capacitance[4] Parameter Description CIN Input Capacitance COUT I/O Capacitance Test Conditions Max. TA = 25°C, f = 1 MHz, VCC = 3.3V Unit 8 pF 8 pF Thermal Resistance[4] Parameter ΘJA ΘJC Description Test Conditions 44-pin TSOP-II 48-FBGA 44-SOJ Unit 42.96 38.15 25.99 °C/W 10.75 9.15 18.8 °C/W Thermal Resistance Test conditions follow standard (Junction to Ambient) test methods and procedures for Thermal Resistance measuring thermal impedance, per EIA / JESD51. (Junction to Case) Notes: 3. VIL (min.) = –2.0V and VIH(max) = VCC + 0.5V for pulse durations of less than 20 ns. 4. Tested initially and after any design or process changes that may affect these parameters. Document #: 38-05134 Rev. *G Page 4 of 12 CY7C1041CV33 AC Test Loads and Waveforms[5] 12-, 15-, 20-ns Devices 10-ns Devices Z = 50Ω R 317Ω 3.3V OUTPUT 50 Ω * CAPACITIVE LOAD CONSISTS OF ALL COMPONENTS OF THE TEST ENVIRONMENT OUTPUT 30 pF* R2 351Ω 30 pF 1.5V (b) (a) High-Z Characteristics R 317Ω 3.3V ALL INPUT PULSES 3.0V 90% 90% GND (c) Rise Time: 1 V/ns OUTPUT 10% 10% R2 351Ω 5 pF Fall Time: 1 V/ns (d) AC Switching Characteristics[6] Over the Operating Range -10 Parameter Description Min. -12 Max. Min. -15 Max. Min. -20 Max. Min. Max. Unit Read Cycle tpower[7] VCC(typical) to the first access 1 1 1 1 µs tRC Read Cycle Time 10 12 15 20 ns tAA Address to Data Valid tOHA Data Hold from Address Change tACE CE LOW to Data Valid 10 12 15 20 ns tDOE OE LOW to Data Valid 5 6 7 8 ns tLZOE OE LOW to Low-Z tHZOE OE HIGH to High-Z[8, 9] 8 ns tLZCE CE LOW to Low-Z[9] tHZCE CE HIGH to 10 3 12 3 0 0 5 3 High-Z[8, 9] 5 6 ns 3 7 ns 8 ns tPU CE LOW to Power-Up tPD CE HIGH to Power-Down 10 12 15 20 ns tDBE Byte Enable to Data Valid 5 6 7 8 ns tLZBE Byte Enable to Low-Z tHZBE Byte Disable to High-Z 0 0 ns ns 0 7 3 0 20 3 0 6 3 0 15 3 0 6 0 0 6 ns 0 7 ns 8 ns Write Cycle[10, 11] tWC Write Cycle Time 10 12 15 20 ns tSCE CE LOW to Write End 7 8 10 10 ns tAW Address Set-Up to Write End 7 8 10 10 ns Shaded areas contain advance information. Notes: 5. AC characteristics (except High-Z) for 10-ns parts are tested using the load conditions shown in Figure (a). All other speeds are tested using the Thevenin load shown in Figure (b). High-Z characteristics are tested for all speeds using the test load shown in Figure (d). 6. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V. 7. tPOWER gives the minimum amount of time that the power supply should be at typical VCC values until the first memory access can be performed. 8. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (d) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage. 9. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 10. The internal Write time of the memory is defined by the overlap of CE LOW, and WE LOW. CE and WE must be LOW to initiate a Write, and the transition of either of these signals can terminate the Write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the Write. 11. The minimum Write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD. Document #: 38-05134 Rev. *G Page 5 of 12 CY7C1041CV33 AC Switching Characteristics[6] Over the Operating Range (continued) -10 Parameter Description Min. -12 Max. Min. -15 Max. Min. -20 Max. Min. Max. Unit tHA Address Hold from Write End 0 0 0 0 ns tSA Address Set-Up to Write Start 0 0 0 0 ns tPWE WE Pulse Width 7 8 10 10 ns tSD Data Set-Up to Write End 5 6 7 8 ns tHD Data Hold from Write End 0 0 0 0 ns tLZWE WE HIGH to Low-Z[9] 3 3 3 3 ns [8, 9] tHZWE WE LOW to High-Z 5 tBW Byte Enable to End of Write 7 6 8 7 10 8 10 ns ns Switching Waveforms Read Cycle No. 1[12, 13] tRC ADDRESS tAA tOHA DATA OUT PREVIOUS DATA VALID DATA VALID Read Cycle No. 2 (OE Controlled)[13, 14] ADDRESS tRC CE tACE OE tHZOE tDOE BHE, BLE tLZOE tHZCE tDBE tLZBE DATA OUT HIGH IMPEDANCE tLZCE VCC SUPPLY CURRENT tHZBE HIGH IMPEDANCE DATA VALID tPD tPU 50% IICC CC 50% IISB SB Notes: 12. Device is continuously selected. OE, CE, BHE and/or BHE = VIL. 13. WE is HIGH for Read cycle. 14. Address valid prior to or coincident with CE transition LOW. Document #: 38-05134 Rev. *G Page 6 of 12 CY7C1041CV33 Switching Waveforms (continued) Write Cycle No. 1 (CE Controlled)[15, 16] tWC ADDRESS CE tSA tSCE tAW tHA tPWE WE tBW BHE, BLE tSD tHD DATA I/O Write Cycle No. 2 (BLE or BHE Controlled) tWC ADDRESS BHE, BLE tSA tBW tAW tHA tPWE WE tSCE CE tSD tHD DATA I/O Notes: 15. Data I/O is high-impedance if OE or BHE and/or BLE = VIH. 16. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. Document #: 38-05134 Rev. *G Page 7 of 12 CY7C1041CV33 Switching Waveforms (continued) Write Cycle No. 2 (WE Controlled, OE LOW) tWC ADDRESS tSCE CE tAW tHA tSA tPWE WE tBW BHE, BLE tHZWE tSD tHD DATA I/O tLZWE Truth Table CE OE WE BLE BHE H X X X X High-Z High-Z Power-down Standby (ISB) L L H L L Data Out Data Out Read All Bits Active (ICC) L L H L H Data Out High-Z Read Lower Bits Only Active (ICC) L L H H L High-Z Data Out Read Upper Bits Only Active (ICC) L X L L L Data In Data In Write All Bits Active (ICC) L X L L H Data In High-Z Write Lower Bits Only Active (ICC) L X L H L High-Z Data In Write Upper Bits Only Active (ICC) L H H X X High-Z High-Z Selected, Outputs Disabled Active (ICC) Document #: 38-05134 Rev. *G I/O0–I/O7 I/O8–I/O15 Mode Power Page 8 of 12 CY7C1041CV33 Ordering Information Speed (ns) 10 12 15 20 Ordering Code Package Diagram Package Type CY7C1041CV33-10BAC 51-85106 48-ball Fine Pitch BGA CY7C1041CV33-10BAXC 51-85106 48-ball Fine Pitch BGA (Pb-Free) CY7C1041CV33-10VC 51-85082 44-lead (400-mil) Molded SOJ CY7C1041CV33-10VXC 51-85082 44-lead (400-mil) Molded SOJ (Pb-Free) CY7C1041CV33-10ZC 51-85087 44-pin TSOP II Z44 CY7C1041CV33-10ZXC 51-85087 44-pin TSOP II Z44 (Pb-Free) CY7C1041CV33-10BAI 51-85106 48-ball Fine Pitch BGA CY7C1041CV33-10BAXI 51-85106 48-ball Fine Pitch BGA (Pb-Free) CY7C1041CV33-10ZI 51-85087 44-pin TSOP II Z44 CY7C1041CV33-10ZXI 51-85087 44-pin TSOP II Z44 (Pb-Free) CY7C1041CV33-12VC 51-85082 44-lead (400-mil) Molded SOJ CY7C1041CV33-12VXC 51-85082 44-lead (400-mil) Molded SOJ (Pb-Free) CY7C1041CV33-12ZC 51-85087 44-pin TSOP II Z44 CY7C1041CV33-12ZXC 51-85087 44-pin TSOP II Z44 (Pb-Free) CY7C1041CV33-12BAXI 51-85106 48-ball Fine Pitch BGA (Pb-Free) CY7C1041CV33-12VXI 51-85082 44-lead (400-mil) Molded SOJ (Pb-Free) CY7C1041CV33-12ZI 51-85087 44-pin TSOP II Z44 CY7C1041CV33-12ZXI 51-85087 44-pin TSOP II Z44 (Pb-Free) CY7C1041CV33-15VC 51-85082 44-lead (400-mil) Molded SOJ CY7C1041CV33-15VXC 51-85082 44-lead (400-mil) Molded SOJ (Pb-Free) CY7C1041CV33-15ZC 51-85087 44-pin TSOP II Z44 CY7C1041CV33-15ZXC 51-85087 44-pin TSOP II Z44 (Pb-Free) CY7C1041CV33-15VI 51-85082 44-lead (400-mil) Molded SOJ CY7C1041CV33-15VXI 51-85082 44-lead (400-mil) Molded SOJ (Pb-Free) CY7C1041CV33-15ZI 51-85087 44-pin TSOP II Z44 CY7C1041CV33-15ZXI 51-85087 44-pin TSOP II Z44 (Pb-Free) CY7C1041CV33-20VXC 51-85082 44-lead (400-mil) Molded SOJ (Pb-Free) CY7C1041CV33-20ZC 51-85087 44-pin TSOP II Z44 CY7C1041CV33-20ZXC 51-85087 44-pin TSOP II Z44 (Pb-Free) CY7C1041CV33-20ZI 51-85087 44-pin TSOP II Z44 CY7C1041CV33-20ZXI 51-85087 44-pin TSOP II Z44 (Pb-Free) CY7C1041CV33-20BAE 51-85106 48-ball Fine Pitch BGA CY7C1041CV33-20BAXE 51-85106 48-ball Fine Pitch BGA (Pb-Free) CY7C1041CV33-20VE 51-85082 44-lead (400-mil) Molded SOJ CY7C1041CV33-20VXE 51-85082 44-lead (400-mil) Molded SOJ (Pb-Free) CY7C1041CV33-20ZE 51-85087 44-pin TSOP II Z44 CY7C1041CV33-20ZXE 51-85087 44-pin TSOP II Z44 (Pb-Free) CY7C1041CV33-20ZSXE 51-85087 44-pin TSOP II Z44 (Pb-Free) Operating Range Commercial Industrial Commercial Industrial Commercial Industrial Commercial Industrial Automotive Please contact your local Cypress sales representative for availability of these parts Document #: 38-05134 Rev. *G Page 9 of 12 CY7C1041CV33 Package Diagrams 48-Ball (7.00 mm x 8.5 mm x 1.2 mm) FBGA (51-85106) BOTTOM VIEW TOP VIEW A1 CORNER Ø0.05 M C Ø0.25 M C A B A1 CORNER Ø0.30±0.05(48X) 1 2 3 4 5 6 6 4 3 2 1 C C F G D E 2.625 8.50±0.10 E 0.75 A B 5.25 A B D 8.50±0.10 5 F G H H 1.875 A A B 0.75 7.00±0.10 3.75 7.00±0.10 0.15 C 0.21±0.05 0.53±0.05 0.25 C B 0.15(4X) 51-85106-*E Document #: 38-05134 Rev. *G 1.20 MAX. 0.36 SEATING PLANE C Page 10 of 12 CY7C1041CV33 Package Diagrams (continued) 44-lead (400-mil) Molded SOJ (51-85082) 51-85082-*B 44-pin TSOP II (51-85087) 51-85087-*A All products and company names mentioned in this document may be the trademarks of their respective holders. Document #: 38-05134 Rev. *G Page 11 of 12 © Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. CY7C1041CV33 Document History Page Document Title: CY7C1041CV33 4-Mbit (256K x 16) Static RAM Document Number: 38-05134 REV. ECN NO. Issue Date Orig. of Change Description of Change ** 109513 12/13/01 HGK New Data Sheet *A 112440 12/20/01 BSS Updated 51-85106 from revision *A to *C *B 112859 03/25/02 DFP Added CY7C1042CV33 in BGA package Removed 1042 BGA option pin ACC Final Data Sheet *C 116477 09/16/02 CEA Add applications foot note to data sheet *D 119797 10/21/02 DFP Added 20-ns speed bin *E 262949 See ECN RKF 1) Added Lead (Pb)-Free parts in the Ordering info (Page #9) 2) Added Automotive Specs to Datasheet *F 361795 See ECN SYT Added Pb-Free offerings in the Ordering Information *G 435387 See ECN NXR Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901 North First Street” to “198 Champion Court” Removed -8 Speed bin from Product offering. Corrected typo in description for BHE/BLE in pin definitions table on Page# 3 corrected ther Pin name from OE2 to OE. Included the Maximum Ratings for Static Discharge Voltage and Latch up Current. Changed the description of IIX current from Input Load Current to Input Leakage Current Updated the Ordering Information table and replaced the Package Name column with Package Diagram. Document #: 38-05134 Rev. *G Page 12 of 12