CY7C1049CV33-12ZSXA

CY7C1049CV33 Automotive 4-Mbit (512 K × 8) Static RAM 4-Mbit (512 K × 8) Static RAM Features ■ Functional Description The CY7C1049CV33 Automotive is a high performance CMOS Static RAM organized as 524,288 words by eight bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A18). Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the I/O pins. The eight input and output pins (I/O0 through I/O7) are placed in a high impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE LOW, and WE LOW). The CY7C1049CV33 Automotive is available in standard 400-mil-wide 36-pin SOJ package and 44-pin TSOP II package with center power and ground (revolutionary) pinout. For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines. Temperature ranges ❐ Automotive -A: –40 °C to 85 °C ❐ Automotive-E: –40 °C to 125 °C High speed ❐ tAA = 10 ns Low active power ❐ 360 mW (max) 2.0 V data retention Automatic power down when deselected TTL-compatible inputs and outputs Easy memory expansion with CE and OE features ■ ■ ■ ■ ■ ■ Logic Block Diagram A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 CE WE OE INPUT BUFFER ROW DECODER IO0 IO1 SENSE AMPS IO2 IO3 IO4 IO5 IO6 512K x 8 ARRAY COLUMN DECODER POWER DOWN IO7 A13 A14 A15 A16 A17 A18 Cypress Semiconductor Corporation Document #: 001-67511 Rev. ** • 198 Champion Court • San Jose, CA 95134-1709 •408-943-2600 Revised February 16, 2011 [+] Feedback CY7C1049CV33 Automotive Contents Selection Guide ................................................................ 3 Pin Configuration ............................................................. 3 Pin Definitions .................................................................. 3 Maximum Ratings ............................................................. 4 Operating Range ............................................................... 4 Electrical Characteristics ................................................. 4 Capacitance ...................................................................... 4 Thermal Resistance .......................................................... 4 AC Switching Characteristics ......................................... 6 Switching Waveforms ...................................................... 7 Truth Table ........................................................................ 8 Ordering Information ....................................................... 9 Ordering Code Definitions ........................................... 9 Package Diagrams ......................................................... 10 Acronyms ........................................................................ 11 Document Conventions ................................................. 11 Units of Measure ....................................................... 11 Document History Page ................................................. 12 Sales, Solutions, and Legal Information ...................... 13 Worldwide Sales and Design Support ....................... 13 Products .................................................................... 13 PSoC Solutions ......................................................... 13 Document #: 001-67511 Rev. ** Page 2 of 13 [+] Feedback CY7C1049CV33 Automotive Selection Guide Description Maximum Access Time Maximum Operating Current Maximum CMOS Standby Current Automotive-A Automotive-E Automotive-A Automotive-E -10 10 100 – 10 – -12 12 95 – 10 – -15 15 – 95 – 15 Unit ns mA mA mA mA Pin Configuration Figure 1. 36-pin SOJ (Top View) A0 A1 A2 A3 A4 CE I/O0 I/O1 VCC GND I/O2 I/O3 WE A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 NC A18 A17 A16 A15 OE I/O7 I/O6 GND VCC I/O5 I/O4 A14 A13 A12 A11 A10 NC Figure 2. 44-pin TSOP II (Top View) NC NC A0 A1 A2 A3 A4 CE I/O0 I/O1 VCC VSS I/O2 I/O3 WE A5 A6 A7 A8 A9 NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 NC NC NC A18 A17 A16 A15 OE I/O7 I/O6 VSS VCC I/O5 I/O4 A14 A13 A12 A11 A10 NC NC NC Pin Definitions Pin Name A0–A18 I/O0–I/O7 NC[1] 36 SOJ Pin Number 44 TSOP II Pin Number I/O Type Input Description Address inputs used to select one of the address locations. 1–5, 14–18, 3–7, 16–20, 20–24, 32–35 26–30, 38–41 7, 8, 11, 12, 9, 10, 13, 14, 25, 26, 29, 30 31, 32, 35, 36 19, 36 1, 2, 21, 22, 23, 24, 25, 42, 43, 44 15 8 37 Input/Output Bidirectional data I/O lines. Used as input or output lines depending on operation No Connect No connects. This pin is not connected to the die WE CE OE 13 6 31 Input/Control Write Enable input, active LOW. When selected LOW, a WRITE is conducted. When selected HIGH, a READ is conducted. Input/Control Chip Enable input, active LOW. When LOW, selects the chip. When HIGH, deselects the chip. Input/Control Output Enable, active LOW. Controls the direction of the I/O pins. When LOW, the I/O pins are allowed to behave as outputs. When deasserted HIGH, I/O pins are three-stated, and act as input data pins. Ground Ground for the device. Should be connected to ground of the system. Power Supply Power supply inputs to the device. VSS, GND VCC 10, 28 9, 27 12, 34 11, 33 Note 1. NC pins are not connected on the die. Document #: 001-67511 Rev. ** Page 3 of 13 [+] Feedback CY7C1049CV33 Automotive Maximum Ratings Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested. Storage Temperature ............................... –65 C to +150C Ambient Temperature with Power Applied .......................................... –55 C to +125 C Supply Voltage on VCC to Relative GND[2]–0.5 V to +4.6 VDC Voltage Applied to Outputs in High Z State[2] .................................. –0.5 V to VCC + 0.5 V Input Voltage[2] .................................... –0.5 V to VCC + 0.5 V Current into Outputs (LOW) ........................................ 20 mA Operating Range Range Automotive-A Automotive-E Ambient Temperature –40 C to +85 C –40 C to +125 C VCC 3.3 V  0.3 V Electrical Characteristics Over the Operating Range Parameter VOH VOL VIH VIL IIX ICC ISB1 ISB2 Description Test Conditions -10 Min 2.4 – 2.0 –0.3 GND < VI < VCC VCC = Max, f = fMAX = 1/tRC Auto-A Auto-E VCC Operating Supply Current Auto-A Auto-E Auto-A Auto-E Auto-A Auto-E –1 – – – – – – – Max – 0.4 VCC + 0.3 0.8 +1 – 100 – 40 – 10 – 2.4 – 2.0 –0.3 –1 – – – – – – – -12 Min Max – 0.4 VCC + 0.3 0.8 +1 – 95 – 40 – 10 – 2.4 – 2.0 –0.3 – –20 – – – – – – -15 Min Max – 0.4 VCC + 0.3 0.8 – +20 – 95 – 45 – 15 mA mA mA mA mA Unit V V V V A Output HIGH Voltage VCC = Min; IOH = –4.0 mA Output LOW Voltage VCC = Min; IOL = 8.0 mA Input HIGH Voltage Input LOW Voltage[2] Input Load Current Automatic CE Max. VCC, CE > VIH; Power Down Current VIN > VIH or VIN < VIL, f = fMAX —TTL Inputs Max. VCC, CE > VCC – 0.3 V, Automatic CE Power Down Current VIN > VCC – 0.3 V, or VIN < 0.3 V, —CMOS Inputs f=0 Capacitance Tested initially and after any design or process changes that may affect these parameters. Parameter[3] CIN COUT Description Input Capacitance I/O Capacitance Test Conditions TA = 25 C, f = 1 MHz, VCC = 3.3 V Max 8 8 Unit pF pF Thermal Resistance Tested initially and after any design or process changes that may affect these parameters. Parameter[3] Description Thermal Resistance (Junction to Ambient) Thermal Resistance (Junction to Case) Test Conditions Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA / JESD51. 36-pin SOJ 46.51 18.8 44-pin TSOP-II 41.66 10.56 Unit °C/W °C/W JA JC Notes 2. VIL (min) = –2.0 V and VIH(max) = VCC + 0.5 V for pulse durations of less than 20 ns. 3. Tested initially and after any design or process changes that may affect these parameters. Document #: 001-67511 Rev. ** Page 4 of 13 [+] Feedback CY7C1049CV33 Automotive Figure 3. AC Test Loads and Waveforms [4] 10-ns devices: OUTPUT 50 * CAPACITIVE LOAD CONSISTS OF ALL COMPONENTS OF THE TEST ENVIRONMENT 1.5 V 12-, 15-ns devices: 3.3 V OUTPUT 30 pF R2 351 R 317  Z = 50  30 pF* (a) High Z characteristics: 3.3 V 90% 10% OUTPUT 5 pF (b) R 317  3.0 V GND Rise Time: 1 V/ns ALL INPUT PULSES 90% 10% R2 351 (c) Fall Time: 1 V/ns (d) Notes 4. AC characteristics (except High Z) for 10 ns parts are tested using the load conditions shown in Figure 3 (a). All other speeds are tested using the Thevenin load shown in Figure 3 (b). High Z characteristics are tested for all speeds using the test load shown in Figure 3 (d). Document #: 001-67511 Rev. ** Page 5 of 13 [+] Feedback CY7C1049CV33 Automotive AC Switching Characteristics Over the Operating Range [5] -10 Parameter Read Cycle tpower[6] tRC tAA tOHA tACE tDOE tLZOE tHZOE tLZCE tHZCE tPU tPD tWC tSCE tAW tHA tSA tPWE tSD tHD tLZWE tHZWE VCC(typical) to the first access Read Cycle Time Address to Data Valid Data Hold from Address Change CE LOW to Data Valid OE LOW to Data Valid OE LOW to Low Z OE HIGH to High CE HIGH to High Z[7, 8] Z[7, 8] CE LOW to Low Z[8] CE LOW to Power Up CE HIGH to Power Down Write Cycle Time CE LOW to Write End Address Setup to Write End Address Hold from Write End Address Setup to Write Start WE Pulse Width Data Setup to Write End Data Hold from Write End WE HIGH to Low Z[8] WE LOW to High Z[7, 8] 100 10 – 3 – – 0 – 3 – 0 – 10 7 7 0 0 7 5 0 3 – – – 10 – 10 5 – 5 – 5 – 10 – – – – – – – – – 5 100 12 – 3 – – 0 – 3 – 0 – 12 8 8 0 0 8 6 0 3 – – – 12 – 12 6 – 6 – 6 – 12 – – – – – – – – – 6 100 15 – – – – 0 – 3 – 0 – 15 10 10 0 0 10 7 0 3 – – – 15 3 15 7 – 7 – 7 – 15 – – – – – – – – – 7 s ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Description Min Max Min -12 Max Min -15 Max Unit Write Cycle [9, 10] Notes 5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5 V, input pulse levels of 0 to 3.0 V. 6. tPOWER gives the minimum amount of time that the power supply should be at stable, typical VCC values until the first memory access can be performed. 7. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (d) ofFigure 3 on page 5. Transition is measured ±500 mV from steady-state voltage. 8. At any temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any device. 9. The internal Write time of the memory is defined by the overlap of CE LOW, and WE LOW. CE and WE must be LOW to initiate a Write, and the transition of either of these signals can terminate the Write. The input data setup and hold timing should be referenced to the leading edge of the signal that terminates the Write. 10. The minimum Write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD. Document #: 001-67511 Rev. ** Page 6 of 13 [+] Feedback CY7C1049CV33 Automotive Switching Waveforms Figure 4. Read Cycle No. 1 (Address Transition Controlled) [11, 12] tRC RC ADDRESS tOHA DATA OUT PREVIOUS DATA VALID tAA DATA VALID Figure 5. Read Cycle No. 2 (OE Controlled) [12, 13] ADDRESS tRC CE tACE OE tDOE tLZOE HIGH IMPEDANCE DATA OUT VCC SUPPLY CURRENT tPU 50% tLZCE DATA VALID tPD 50% tHZOE tHZCE HIGH IMPEDANCE ICC ISB Figure 6. Write Cycle No. 1 (WE Controlled, OE HIGH During Write) [14, 15] tWC ADDRESS tSCE CE tAW tSA WE tPWE tHA OE tSD DATA I/O NOTE 16 tHZOE Notes 11. Device is continuously selected. OE, CE = VIL. 12. WE is HIGH for read cycles. 13. Address valid before or similar to CE transition LOW. 14. Data I/O is high impedance if OE = VIH. 15. If CE goes HIGH simultaneously with WE HIGH, the output remains in high impedance state. 16. During this period, the I/Os are in output state. Do not apply input signals. tHD DATA VALID Document #: 001-67511 Rev. ** Page 7 of 13 [+] Feedback CY7C1049CV33 Automotive Switching Waveforms (continued) Figure 7. Write Cycle No. 2 (WE Controlled, OE LOW) [17] tWC ADDRESS tSCE CE tAW tSA WE tSD DATA I/O NOTE 18 tHZWE DATA VALID tPWE tHA tHD tLZWE Truth Table CE H L L L OE X L X H WE X H L H High Z Data Out Data In High Z I/O0–I/O7 Power Down Read Write Selected, Outputs Disabled Mode Power Standby (ISB) Active (ICC) Active (ICC) Active (ICC) Notes 17. If CE goes HIGH simultaneously with WE HIGH, the output remains in high impedance state. 18. During this period, the I/Os are in output state. Do not apply input signals. Document #: 001-67511 Rev. ** Page 8 of 13 [+] Feedback CY7C1049CV33 Automotive Ordering Information Speed (ns) 10 12 15 Ordering Code CY7C1049CV33-10VXA CY7C1049CV33-12ZSXA CY7C1049CV33-15VXE CY7C1049CV33-15ZSXE Package Diagram 51-85090 51-85087 51-85090 51-85087 Package Type 36-pin (400-Mil) Molded SOJ (Pb-free) 44-pin TSOP II (Pb-free) 36-pin (400-Mil) Molded SOJ (Pb-free) 44-pin TSOP II (Pb-free) Operating Range Automotive-A Automotive-A Automotive-E Automotive-E Ordering Code Definitions CY 7C 1 04 9 C V33 - XX XX X X Temperature Range: X = A or E A = Automotive-A or E = Automotive-E X = Pb-free; X Absent = Leaded Package Type: XX = V or ZS V = 36-pin Molded SOJ ZS = 44-pin TSOP II Speed Grade: XX = 10 ns or 12 ns or 15 ns V33 = 3.0 V to 3.6 V Process Technology: C  150 nm Data width: × 8-bits 4-Mbit density Fast Asynchronous SRAM Marketing Code: 7C = SRAMs Company ID: CY = Cypress Document #: 001-67511 Rev. ** Page 9 of 13 [+] Feedback CY7C1049CV33 Automotive Package Diagrams Figure 8. 36-pin (400-Mil) Molded SOJ, 51-85090 51-85090 *E Figure 9. 44-pin TSOP II, 51-85087 51-85087 *C Document #: 001-67511 Rev. ** Page 10 of 13 [+] Feedback CY7C1049CV33 Automotive Acronyms Acronym CMOS CE OE RAM I/O SOJ TTL TSOP WE Chip Enable Output Enable Random Access Memory Input/Output small outline J-lead transistor-transistor logic thin small outline package Write Enable Description complementary metal oxide semiconductor Document Conventions Units of Measure Symbol  ns V µs µA mA mm ms MHz pF % mW W °C ohms nano seconds Volts micro seconds micro Amperes milli Amperes milli meter milli seconds Mega Hertz pico Farad percent milli Watts Watts degree Celcius Unit of Measure Document #: 001-67511 Rev. ** Page 11 of 13 [+] Feedback CY7C1049CV33 Automotive Document History Page Document Title: CY7C1049CV33 Automotive 4-Mbit (512 K × 8) Static RAM Document Number: 001-67511 Rev. ** ECN 3186792 Orig. of Change PRAS Submission Date Description of Change 03/03/2011 Separation of the automotive datasheet from CY7C1049CV33 spec no. 38-05006 Rev. *J. Further rev of 38-05006 would include only industrial / commercial parts. Document #: 001-67511 Rev. ** Page 12 of 13 [+] Feedback CY7C1049CV33 Automotive Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. Products Automotive Clocks & Buffers Interface Lighting & Power Control Memory Optical & Image Sensing PSoC Touch Sensing USB Controllers Wireless/RF cypress.com/go/automotive cypress.com/go/clocks cypress.com/go/interface cypress.com/go/powerpsoc cypress.com/go/plc cypress.com/go/memory cypress.com/go/image cypress.com/go/psoc cypress.com/go/touch cypress.com/go/USB cypress.com/go/wireless PSoC Solutions psoc.cypress.com/solutions PSoC 1 | PSoC 3 | PSoC 5 © Cypress Semiconductor Corporation, 2002-2011. The information contained herein is subject to change without notice. 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Document #: 001-67511 Rev. ** Revised February 16, 2011 Page 13 of 13 All products and company names mentioned in this document may be the trademarks of their respective holders. [+] Feedback