CY7C1049GN
4-Mbit (512K words × 8-bit) Static RAM
4-Mbit (512K words × 8-bit) Static RAM
Features
Functional Description
■
High speed
❐ tAA = 10 ns
CY7C1049GN is a high-performance CMOS fast static RAM
device organized as 512K words by 8-bits.
■
Low active and standby currents
❐ Active current: ICC = 38 mA typical
❐ Standby current: ISB2 = 6 mA typical
Data writes are performed by asserting the Chip Enable (CE) and
Write Enable (WE) inputs LOW, while providing the data on I/O0
through I/O7 and address on A0 through A18 pins.
■
Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and
4.5 V to 5.5 V
■
1.0 V data retention
■
TTL-compatible inputs and outputs
■
Pb-free 36-pin SOJ and 44-pin TSOP II packages
Data reads are performed by asserting the Chip Enable (CE) and
Output Enable (OE) inputs LOW and providing the required
address on the address lines. Read data is accessible on the I/O
lines (I/O0 through I/O7).
All I/Os (I/O0 through I/O7) are placed in a high-impedance state
during the following events:
■
The device is deselected (CE HIGH)
■
The control signal OE is de-asserted
The logic block diagram is on page 2.
Product Portfolio
Product
CY7C1049GN18
Range
VCC Range (V)
Industrial
Power Dissipation
Speed
(ns)
Operating ICC, (mA)
10/15
f = fmax
Typ[1]
Standby, ISB2 (mA)
Max
Typ[1]
Max
6
8
1.65 V–2.2 V
15
–
40
CY7C1049GN30
2.2 V–3.6 V
10
38
45
CY7C1049GN
4.5 V–5.5 V
10
38
45
Note
1. Typical values are included only for reference and are not guaranteed or tested. Typical values are measured at VCC = 1.8 V (for a VCC range of 1.65 V–2.2 V),
VCC = 3 V (for a VCC range of 2.2 V–3.6 V), and VCC = 5 V (for a VCC range of 4.5 V–5.5 V), TA = 25 °C.
Cypress Semiconductor Corporation
Document Number: 002-10613 Rev. *C
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised November 14, 2017
CY7C1049GN
Logic Block Diagram – CY7C1049GN
512K x 8
RAM ARRAY
SENSE
AMPLIFIERS
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
ROW DECODER
INPUT BUFFER
I/O0‐I/O7
A10
A11
A12
A13
A14
A15
A16
A17
A18
COLUMN
DECODER
Document Number: 002-10613 Rev. *C
WE
OE
CE
Page 2 of 17
CY7C1049GN
Contents
Pin Configurations ........................................................... 4
Maximum Ratings ............................................................. 5
Operating Range ............................................................... 5
DC Electrical Characteristics .......................................... 5
Capacitance ...................................................................... 6
Thermal Resistance .......................................................... 6
AC Test Loads and Waveforms ....................................... 6
Data Retention Characteristics ....................................... 7
Data Retention Waveform ................................................ 7
AC Switching Characteristics ......................................... 8
Switching Waveforms ...................................................... 9
Truth Table ...................................................................... 12
Ordering Information ...................................................... 13
Ordering Code Definitions ......................................... 13
Document Number: 002-10613 Rev. *C
Package Diagrams .......................................................... 14
Acronyms ........................................................................ 15
Document Conventions ................................................. 15
Units of Measure ....................................................... 15
Document History Page ................................................. 16
Sales, Solutions, and Legal Information ...................... 17
Worldwide Sales and Design Support ....................... 17
Products .................................................................... 17
PSoC® Solutions ...................................................... 17
Cypress Developer Community ................................. 17
Technical Support ..................................................... 17
Page 3 of 17
CY7C1049GN
Pin Configurations
Figure 1. 36-pin SOJ pinout [2]
A0
A1
A2
A3
A4
CE
I/O0
I/O1
VCC
GND
I/O2
I/O3
WE
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
SOJ
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
NC
A18
A17
A16
A15
OE
I/O7
I/O6
GND
VCC
I/O5
I/O4
A14
A13
A12
A11
A10
NC
Figure 2. 44-pin TSOP II pinout, Single Chip Enable [2]
NC
NC
A0
A1
A2
A3
A4
/CE
I/O0
I/O1
VCC
VSS
I/O2
I/O3
/WE
A5
A6
A7
A8
A9
NC
NC
1
44
2
43
3
42
4
41
5
40
6
39
7
38
8
37
9
44-pin TSOP II 36
10
35
11
34
12
33
13
32
14
31
15
30
16
29
17
28
18
27
19
26
20
25
21
24
22
23
NC
NC
NC
A18
A17
A16
A15
/OE
I/O7
I/O6
VSS
VCC
I/O5
I/O4
A14
A13
A12
A11
A10
NC
NC
NC
Note
2. NC pins are not connected internally to the die.
Document Number: 002-10613 Rev. *C
Page 4 of 17
CY7C1049GN
DC input voltage [3] .............................. –0.5 V to VCC + 0.5 V
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 C to +150 C
Ambient temperature
with power applied ................................... –55 C to +125 C
Current into outputs (in LOW state) ............................ 20 mA
Static discharge voltage
(MIL-STD-883, Method 3015) ................................. > 2001 V
Latch-up current .................................................... > 140 mA
Operating Range
Supply voltage
on VCC relative to GND [3] ..................... –0.5 to VCC + 0.5 V
DC voltage applied to outputs
in HI-Z State [3] ................................... –0.5 V to VCC + 0.5 V
Grade
Industrial
Ambient Temperature
–40 C to +85 C
VCC
1.65 V to 2.2 V,
2.2 V to 3.6 V,
4.5 V to 5.5 V
DC Electrical Characteristics
Over the operating range of –40 C to 85 C
Parameter
VOH
Description
Output HIGH
voltage
1.65 V to 2.2 V VCC = Min, IOH = –0.1 mA
Output LOW
voltage
VIH
VIL
Input LOW
voltage
Typ [4]
Max
1.4
–
–
VCC = Min, IOH = –1.0 mA
2
–
–
2.7 V to 3.0 V
VCC = Min, IOH = –4.0 mA
2.2
–
–
3.0 V to 3.6 V
VCC = Min, IOH = –4.0 mA
2.4
–
–
4.5 V to 5.5 V
VCC = Min, IOH = –4.0 mA
2.4
–
–
–
–
VCC = Min, IOH = –0.1mA
VCC –
0.5[5]
Unit
V
1.65 V to 2.2 V VCC = Min, IOL = 0.1 mA
–
–
0.2
2.2 V to 2.7 V
VCC = Min, IOL = 2 mA
–
–
0.4
2.7 V to 3.6 V
VCC = Min, IOL = 8 mA
–
–
0.4
4.5 V to 5.5 V
VCC = Min, IOL = 8 mA
–
–
0.4
1.4
–
VCC + 0.2[3]
0.3[3]
1.65 V to 2.2 V –
Input HIGH
voltage
10 ns/15 ns
Min
2.2 V to 2.7 V
4.5 V to 5.5 V
VOL
Test Conditions
2.2 V to 2.7 V
–
2
–
VCC +
2.7 V to 3.6 V
–
2
–
VCC + 0.3[3]
4.5 V to 5.5 V
–
2
–
VCC + 0.5[3]
1.65 V to 2.2 V –
–0.2[3]
–
0.4
2.2 V to 2.7 V
–
–0.3[3]
–
0.6
2.7 V to 3.6 V
–
–0.3[3]
–
0.8
4.5 V to 5.5 V
–
–0.5[3]
–
0.8
–
+1
V
V
V
A
IIX
Input leakage current
GND < VIN < VCC
–1
IOZ
Output leakage current
GND < VOUT < VCC, Output disabled
–1
–
+1
A
ICC
Operating supply current
Max VCC, IOUT = 0 mA, f = 100 MHz
CMOS levels
f = 66.7 MHz
–
38
45
mA
–
–
40
ISB1
Automatic CE power-down
current – TTL inputs
Max VCC, CE > VIH,
VIN > VIH or VIN < VIL, f = fMAX
–
–
15
mA
ISB2
Automatic CE power-down
current – CMOS inputs
Max VCC, CE > VCC – 0.2 V,
VIN > VCC – 0.2 V or VIN < 0.2 V, f = 0
–
6
8
mA
Notes
3. VIL(min) = –2.0 V and VIH(max) = VCC + 2 V for pulse durations of less than 20 ns.
4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = 1.8 V (for VCC range of 1.65 V – 2.2 V),
VCC = 3 V (for VCC range of 2.2V – 3.6 V), and VCC = 5 V (for VCC range of 4.5 V – 5.5 V), TA = 25 °C.
5. This parameter is guaranteed by design and not tested.
Document Number: 002-10613 Rev. *C
Page 5 of 17
CY7C1049GN
Capacitance
Parameter [6]
Description
CIN
Input capacitance
COUT
I/O capacitance
Test Conditions
36-pin SOJ
TA = 25 C, f = 1 MHz,
VCC = VCC(typ)
44-pin TSOP II Unit
10
10
pF
10
10
pF
Thermal Resistance
Parameter [6]
Description
JA
Thermal resistance
(junction to ambient)
JC
Thermal resistance
(junction to case)
Test Conditions
36-pin SOJ
Still air, soldered on a 3 × 4.5 inch,
four-layer printed circuit board
44-pin TSOP II Unit
59.52
68.85
C/W
31.48
15.97
C/W
AC Test Loads and Waveforms
Figure 3. AC Test Loads and Waveforms [7]
High-Z Characteristics:
VCC
50
Output
VTH
Z0 = 50
R1
Output
30 pF*
* Including
jig and
scope
(a)
* Capacitive load consists
of all components of the
test environment
(b)
All Input Pulses
VHIGH
GND
R2
5 pF*
90%
90%
10%
Rise Time:
> 1 V/ns
10%
Fall Time:
> 1 V/ns
(c)
Parameters
1.8 V
3.0 V
5.0 V
Unit
R1
1667
317
317
R2
1538
351
351
VTH
0.9
1.5
1.5
V
VHIGH
1.8
3
3
V
Notes
6. Tested initially and after any design or process changes that may affect these parameters.
7. Full-device AC operation assumes a 100-µs ramp time from 0 to VCC(min) and a 100-µs wait time after VCC stabilization.
Document Number: 002-10613 Rev. *C
Page 6 of 17
CY7C1049GN
Data Retention Characteristics
Over the operating range of –40 C to 85 C
Parameter
VDR
Description
Conditions
Min
Max
Unit
1
–
V
–
8
mA
0
–
ns
VCC > 2.2 V
10
–
ns
VCC < 2.2 V
15
–
ns
VCC for data retention
[8]
ICCDR
Data retention current
tCDR[9]
Chip deselect to data retention
time
tR[8, 9]
Operation recovery time
VCC = 1.2 V, CE > VCC – 0.2 V ,
VIN > VCC – 0.2 V, or VIN < 0.2 V
Data Retention Waveform
Figure 4. Data Retention Waveform [8]
VCC
VCC(min)
DATA RETENTION MODE
VDR = 1.0 V
tCDR
VCC(min)
tR
CE
Notes
8. Full-device operation requires linear VCC ramp from VDR to VCC(min) > 100 s or stable at VCC (min) > 100 s.
9. These parameters are guaranteed by design.
Document Number: 002-10613 Rev. *C
Page 7 of 17
CY7C1049GN
AC Switching Characteristics
Over the operating range of –40 C to 85 C
Parameter [10]
Description
10 ns
15 ns
Min
Max
Min
Max
Unit
Read Cycle
tRC
Read cycle time
10
–
15
–
ns
tAA
Address to data
–
10
–
15
ns
tOHA
Data hold from address change
3
–
3
–
ns
tACE
CE LOW to data
–
10
–
15
ns
tDOE
OE LOW to data
–
4.5
–
8
ns
0
–
0
–
ns
–
5
–
8
ns
3
–
3
–
ns
–
5
–
8
ns
0
–
0
–
ns
–
10
–
15
ns
tLZOE
tHZOE
OE LOW to low impedance
OE HIGH to High-Z
[11]
tLZCE
CE LOW to low impedance
tHZCE
CE HIGH to High-Z [11]
tPU
tPD
Write Cycle
[11]
CE LOW to power-up
[11]
[12, 13]
CE HIGH to power-down
[12, 13]
[13, 14]
tWC
Write cycle time
10
–
15
–
ns
tSCE
CE LOW to write end
7
–
12
–
ns
tAW
Address setup to write end
7
–
12
–
ns
tHA
Address hold from write end
0
–
0
–
ns
tSA
Address setup to write start
0
–
0
–
ns
tPWE
WE pulse width
7
–
12
–
ns
tSD
Data setup to write end
5
–
8
–
ns
tHD
Data hold from write end
0
–
0
–
ns
tLZWE
WE HIGH to low impedance [11]
3
–
3
–
ns
–
5
–
8
ns
tHZWE
WE LOW to High-Z
[11]
Notes
10. Test conditions assume a signal transition time (rise/fall) of 3 ns or less, timing reference levels of 1.5 V (for VCC > 3 V) and VCC/2 (for VCC < 3 V), and input pulse
levels of 0 to 3 V (for VCC > 3 V) and 0 to VCC (for VCC < 3 V). Test conditions for the read cycle use output loading, as shown in part (a) of Figure 3 on page 6, unless specified otherwise.
11. tHZOE, tHZCE, tHZWE, tLZOE, tLZCE, and tLZWE are specified with a load capacitance of 5 pF, as shown in part (b) of Figure 3 on page 6. Transition is measured 200 mV from steady state
voltage.
12. These parameters are guaranteed by design and are not tested.
13. The internal write time of the memory is defined by the overlap of WE = VIL, CE = VIL. These signals must be LOW to initiate a write, and the HIGH transition of any
of these signals can terminate the operation. The input data setup and hold timing should be referenced to the edge of the signal that terminates the write.
14. The minimum write cycle pulse width in Write Cycle No. 2 (WE Controlled, OE LOW) should be equal to sum of tDS and tHZWE.
Document Number: 002-10613 Rev. *C
Page 8 of 17
CY7C1049GN
Switching Waveforms
Figure 5. Read Cycle No. 1 (Address Transition Controlled) [15, 16]
tRC
ADDRESS
tAA
tOHA
DATA I/O
PREVIOUS DATAOUT
VALID
DATAOUT VALID
Figure 6. Read Cycle No. 2 (OE Controlled) [15, 16]
ADDRESS
tRC
CE
tPD
tHZCE
tACE
OE
t HZOE
tDOE
tLZOE
DATA I/O
HIGH IMPEDANCE
DATAOUT VALID
HIGH
IMPEDANCE
tLZCE
tPU
VCC
SUPPLY
CURRENT
ISB
Notes
15. WE is HIGH for the read cycle.
16. Address valid prior to or coincident with CE LOW transition.
Document Number: 002-10613 Rev. *C
Page 9 of 17
CY7C1049GN
Switching Waveforms (continued)
Figure 7. Write Cycle No. 1 (CE Controlled) [17, 18]
tW
C
ADDRESS
tS A
tSC E
CE
tA W
tPW
tH A
E
W E
OE
tHZOE
tH D
tS D
D A T A I /O
D A T AI N V A L I D
Figure 8. Write Cycle No. 2 (WE Controlled, OE LOW) [17, 18, 19]
tW C
ADDRESS
tSCE
CE
tS A
tAW
tH A
tPW E
WE
t LZW E
t HZW E
D A T A I /O
tS D
DATA
tH D
IN
V A L ID
Notes
17. The internal write time of the memory is defined by the overlap of WE = VIL, CE = VIL. These signals must be LOW to initiate a write, and the HIGH transition of any
of these signals can terminate the operation. The input data setup and hold timing should be referenced to the edge of the signal that terminates the write.
18. Data I/O is in HI-Z state if CE = VIH, or OE = VIH.
19. The minimum write cycle pulse width should be equal to sum of tSD and tHZWE.
Document Number: 002-10613 Rev. *C
Page 10 of 17
CY7C1049GN
Switching Waveforms (continued)
Figure 9. Write Cycle No. 3 (WE Controlled) [20, 21, 22]
tWC
ADDRESS
tSCE
CE1
CE2
tAW
tSA
WE
tHA
tPWE
OE
tHD
tSD
DATA I/O
NOTE 23
DATA IN VALID
tHZOE
Notes
20. The internal write time of the memory is defined by the overlap of WE = VIL, CE = VIL. These signals must be LOW to initiate a write, and the HIGH transition of any
of these signals can terminate the operation. The input data setup and hold timing should be referenced to the edge of the signal that terminates the write.
21. Data I/O is in HI-Z state if CE = VIH, or OE = VIH.
22. Data I/O is high impedance if OE = VIH.
23. During this period the I/Os are in output state. Do not apply input signals.
Document Number: 002-10613 Rev. *C
Page 11 of 17
CY7C1049GN
Truth Table
CE
H
OE
[24]
X
WE
I/O0–I/O7
Mode
Power
[24]
HI-Z
Power down
Standby (ISB)
X
L
L
H
Data out
Read all bits
Active (ICC)
L
X
L
Data in
Write all bits
Active (ICC)
L
H
H
HI-Z
Selected, outputs disabled
Active (ICC)
Note
24. The input voltage levels on these pins should be either at VIH or VIL.
Document Number: 002-10613 Rev. *C
Page 12 of 17
CY7C1049GN
Ordering Information
Speed
(ns)
10
Voltage
Range
Package
Diagram
Ordering Code
2.2 V–3.6 V CY7C1049GN30-10ZSXI
Package Type (all Pb-free)
51-85087 44-pin TSOP II
CY7C1049GN30-10ZSXIT
51-85087 44-pin TSOP II, Tape and Reel
CY7C1049GN30-10VXI
51-85090 36-pin Molded SOJ
CY7C1049GN30-10VXIT
51-85090 36-pin Molded SOJ, Tape and Reel
4.5 V–5.5 V CY7C1049GN-10VXI
Operating
Range
Industrial
51-85090 36-pin Molded SOJ
CY7C1049GN-10VXIT
51-85090 36-pin Molded SOJ, Tape and Reel
Ordering Code Definitions
CY 7 C 1 04 9 GN
XX - XX
XX
X
I
X
X = blank or T
blank = Bulk; T = Tape and Reel
Temperature Range: I = Industrial
Pb-free
Package Type: XX = ZS or V
ZS = 44-pin TSOP II; V= 36-pin Molded SOJ
Speed: XX = 10 ns
Voltage Range: XX = 30 or blank
30 = 2.2 V–3.6 V; no character = 4.5 V–5.5 V
Process Technology: GN = 65 nm
Data Width: 9 = × 8-bits
Density: 04 = 4-Mbit
Family Code: 1 = Fast Asynchronous SRAM family
Technology Code: C = CMOS
Marketing Code: 7 = SRAM
Company ID: CY = Cypress
Document Number: 002-10613 Rev. *C
Page 13 of 17
CY7C1049GN
Package Diagrams
Figure 10. 44-pin TSOP Z44-II Package Outline, 51-85087
51-85087 *E
Figure 11. 36-pin SOJ V36.4 (Molded) Package Outline, 51-85090
51-85090 *G
Document Number: 002-10613 Rev. *C
Page 14 of 17
CY7C1049GN
Acronyms
Acronym
Document Conventions
Description
Units of Measure
BHE
byte high enable
BLE
byte low enable
°C
Degrees Celsius
CE
chip enable
MHz
megahertz
CMOS
complementary metal oxide semiconductor
A
microamperes
I/O
input/output
s
microseconds
OE
output enable
mA
milliamperes
SRAM
static random access memory
mm
millimeter
TSOP
thin small outline package
ns
nanoseconds
TTL
transistor-transistor logic
ohms
VFBGA
very fine-pitch ball grid array
%
percent
WE
write enable
pF
picofarads
V
volts
W
watts
Document Number: 002-10613 Rev. *C
Symbol
Unit of Measure
Page 15 of 17
CY7C1049GN
Document History Page
Document Title: CY7C1049GN, 4-Mbit (512K words × 8-bit) Static RAM
Document Number: 002-10613
Rev.
ECN No.
Orig. of
Change
Submission
Date
**
5074703
NILE
01/06/2016
New data sheet.
*A
5082587
NILE
01/12/2016
Updated Logic Block Diagram – CY7C1049GN.
Updated Ordering Information:
Updated part numbers.
*B
5437570
NILE
09/15/2016
Updated DC Electrical Characteristics:
Removed details of VOH parameter corresponding to “2.7 V to 3.6 V” and
Test Condition “VCC = Min, IOH = –4.0 mA”.
Added details of VOH parameter corresponding to “2.7 V to 3.0 V” and
Test Condition “VCC = Min, IOH = –4.0 mA”.
Added details of VOH parameter corresponding to “3.0 V to 3.6 V” and
Test Condition “VCC = Min, IOH = –4.0 mA”.
Changed minimum value of VIH parameter corresponding to “4.5 V to 5.5 V”
from 2.2 V to 2 V.
Updated Note 3 (Replaced “2 ns” with “20 ns”).
Updated Ordering Information:
Updated part numbers.
Updated to new template.
*C
5966829
NILE
11/14/2017
Updated Switching Waveforms:
Updated Figure 6.
Updated Figure 7.
Updated Figure 8.
Updated Figure 9.
Updated to new template.
Completing Sunset Review.
Document Number: 002-10613 Rev. *C
Description of Change
Page 16 of 17
CY7C1049GN
Sales, Solutions, and Legal Information
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© Cypress Semiconductor Corporation, 2016-2017. This document is the property of Cypress Semiconductor Corporation and its subsidiaries, including Spansion LLC ("Cypress"). This document,
including any software or firmware included or referenced in this document ("Software"), is owned by Cypress under the intellectual property laws and treaties of the United States and other countries
worldwide. Cypress reserves all rights under such laws and treaties and does not, except as specifically stated in this paragraph, grant any license under its patents, copyrights, trademarks, or other
intellectual property rights. If the Software is not accompanied by a license agreement and you do not otherwise have a written agreement with Cypress governing the use of the Software, then Cypress
hereby grants you a personal, non-exclusive, nontransferable license (without the right to sublicense) (1) under its copyright rights in the Software (a) for Software provided in source code form, to
modify and reproduce the Software solely for use with Cypress hardware products, only internally within your organization, and (b) to distribute the Software in binary code form externally to end users
(either directly or indirectly through resellers and distributors), solely for use on Cypress hardware product units, and (2) under those claims of Cypress's patents that are infringed by the Software (as
provided by Cypress, unmodified) to make, use, distribute, and import the Software solely for use with Cypress hardware products. Any other use, reproduction, modification, translation, or compilation
of the Software is prohibited.
TO THE EXTENT PERMITTED BY APPLICABLE LAW, CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS DOCUMENT OR ANY SOFTWARE
OR ACCOMPANYING HARDWARE, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. To the extent
permitted by applicable law, Cypress reserves the right to make changes to this document without further notice. Cypress does not assume any liability arising out of the application or use of any
product or circuit described in this document. Any information provided in this document, including any sample design information or programming code, is provided only for reference purposes. It is
the responsibility of the user of this document to properly design, program, and test the functionality and safety of any application made of this information and any resulting product. Cypress products
are not designed, intended, or authorized for use as critical components in systems designed or intended for the operation of weapons, weapons systems, nuclear installations, life-support devices or
systems, other medical devices or systems (including resuscitation equipment and surgical implants), pollution control or hazardous substances management, or other uses where the failure of the
device or system could cause personal injury, death, or property damage ("Unintended Uses"). A critical component is any component of a device or system whose failure to perform can be reasonably
expected to cause the failure of the device or system, or to affect its safety or effectiveness. Cypress is not liable, in whole or in part, and you shall and hereby do release Cypress from any claim,
damage, or other liability arising from or related to all Unintended Uses of Cypress products. You shall indemnify and hold Cypress harmless from and against all claims, costs, damages, and other
liabilities, including claims for personal injury or death, arising from or related to any Unintended Uses of Cypress products.
Cypress, the Cypress logo, Spansion, the Spansion logo, and combinations thereof, WICED, PSoC, CapSense, EZ-USB, F-RAM, and Traveo are trademarks or registered trademarks of Cypress in
the United States and other countries. For a more complete list of Cypress trademarks, visit cypress.com. Other names and brands may be claimed as property of their respective owners.
Document Number: 002-10613 Rev. *C
Revised November 14, 2017
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