CY7C1059DV33_09

CY7C1059DV33 8-Mbit (1M x 8) Static RAM Features ■ Functional Description The CY7C1059DV33[1] is a high performance CMOS Static RAM organized as 1M words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. To write to the device, take Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight IO pins (IO0 through IO7) is then written into the location specified on the address pins (A0 through A19). To read from the device, take Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the IO pins. The eight input or output pins (IO0 through IO7) are placed in a high impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or a write operation is in progress (CE LOW and WE LOW). The CY7C1059DV33 is available in 36-ball FBGA and 44-pin TSOP II packages with center power and ground (revolutionary) pinout. High speed ❐ tAA = 10 ns Low active power ❐ ICC = 110 mA at 10 ns Low CMOS standby power ❐ ISB2 = 20 mA 2.0V data retention Automatic power down when deselected TTL-compatible inputs and outputs Easy memory expansion with CE and OE features Available in Pb-free 44-pin TSOP II package Offered in standard and high reliability (Q) grades ■ ■ ■ ■ ■ ■ ■ ■ Logic Block Diagram A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 CE WE OE INPUT BUFFER ROW DECODER IO0 IO1 SENSE AMPS IO2 IO3 IO4 IO5 IO6 1M x 8 ARRAY COLUMN DECODER POWER DOWN IO7 Note 1. For guidelines about SRAM system design, refer to the Cypress application note AN1064, SRAM System Guidelines available at www.cypress.com. A11 A12 A13 A14 A15 A16 A17 A18 A19 Cypress Semiconductor Corporation Document #: 001-00061 Rev. *D • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised October 20, 2008 [+] Feedback CY7C1059DV33 Pin Configuration Figure 1. 44-Pin TSOP II Top View NC NC A0 A1 A2 A3 A4 CE IO0 IO1 VCC VSS IO2 IO3 WE A5 A6 A7 A8 A9 NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 NC NC NC A18 A17 A16 A15 OE IO 7 IO 6 VSS VCC IO 5 IO 4 A14 A13 A12 A11 A10 A19 NC NC Selection Guide Description Maximum Access Time Maximum Operating Current Maximum CMOS Standby Current –10 10 110 20 –12 12 100 20 Unit ns mA mA Document #: 001-00061 Rev. *D Page 2 of 10 [+] Feedback CY7C1059DV33 Maximum Ratings Exceeding the maximum ratings may impair the useful life of the device. These user guidelines are not tested. Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied ............................................ –55°C to +125°C Supply Voltage on VCC to Relative GND[2] ....–0.5V to + 4.6V DC Voltage Applied to Outputs in High-Z State[2] .................................... –0.3V to VCC + 0.3V DC Input Voltage[2] ................................ –0.3V to VCC + 0.3V Current into Outputs (LOW)......................................... 20 mA Static Discharge Voltage............. ...............................>2001V (MIL-STD-883, Method 3015) Latch up Current...................................................... >200 mA Operating Range Range Industrial Ambient Temperature –40°C to +85°C VCC 3.3V ± 0.3V Electrical Characteristics Over the Operating Range Parameter VOH VOL VIH VIL IIX IOZ ICC ISB1 ISB2 Description Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage[2] GND < VI < VCC GND < VOUT < VCC, Output Disabled VCC = Max., f = fMAX = 1/tRC Max. VCC, CE > VIH VIN > VIH or VIN < VIL, f = fMAX Max. VCC, CE > VCC – 0.3V, VIN > VCC – 0.3V, or VIN < 0.3V, f = 0 Input Leakage Current Output Leakage Current VCC Operating Supply Current Automatic CE Power Down Current —TTL Inputs Automatic CE Power Down Current —CMOS Inputs Test Conditions VCC = Min., IOH = –4.0 mA VCC = Min., IOL = 8.0 mA 2.0 –0.3 –1 –1 –10 Min 2.4 0.4 VCC + 0.3 0.8 +1 +1 110 40 20 2.0 –0.3 –1 –1 Max Min 2.4 0.4 VCC + 0.3 0.8 +1 +1 100 35 20 –12 Max Unit V V V V μA μA mA mA mA Capacitance Tested initially and after any design or process changes that may affect these parameters.] Parameter CIN COUT Description Input Capacitance IO Capacitance Test Conditions TA = 25°C, f = 1 MHz, VCC = 3.3V Max 12 12 Unit pF pF Thermal Resistance Tested initially and after any design or process changes that may affect these parameters. Parameter ΘJA ΘJC Description Thermal Resistance (Junction to Ambient) Thermal Resistance (Junction to Case) Test Conditions Still Air, soldered on a 3 × 4.5 inch, four-layer printed circuit board TSOP II 51.43 15.8 Unit °C/W °C/W Notes 2. VIL(min) = –2.0V and VIH(max) = VCC + 2V for pulse durations of less than 20 ns. 3. Tested initially and after any design or process changes that may affect these parameters. Document #: 001-00061 Rev. *D Page 3 of 10 [+] Feedback CY7C1059DV33 AC Test Loads and Waveforms AC characteristics (except High-Z) are tested using the load conditions shown in Figure 2 (a). High-Z characteristics are tested for all speeds using the test load shown in Figure 2 (c). Figure 2. AC Test Loads and Waveforms Z = 50Ω OUTPUT 50Ω * CAPACITIVE LOAD CONSISTS OF ALL COMPONENTS OF THE TEST ENVIRONMENT 3.0V 30 pF* GND ALL INPUT PULSES 90% 10% 90% 10% 1.5V (a) Rise Time: 1 V/ns R 317 Ω (b) Fall Time: 1 V/ns High-Z characteristics: 3.3V OUTPUT 5 pF (c) R2 351Ω Data Retention Characteristics Over the Operating Range Parameter VDR ICCDR tCDR[3] tR[5] Description VCC for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time Figure 3. Data Retention Waveform DATA RETENTION MODE VCC CE 3.0V tCDR VDR > 2V 3.0V tR Conditions[4] VCC = VDR = 2.0V, CE > VCC – 0.3V, VIN > VCC – 0.3V or VIN < 0.3V Min 2.0 Max 20 Unit V mA ns ns 0 tRC Notes 4. No inputs may exceed VCC + 0.3V. 5. Full device operation requires linear VCC ramp from VDR to VCC(min) > 50 μs or stable at VCC(min) > 50 μs. Document #: 001-00061 Rev. *D Page 4 of 10 [+] Feedback CY7C1059DV33 AC Switching Characteristics Over the Operating Range[6] Parameter Read Cycle tpower[7] tRC tAA tOHA tACE tDOE tLZOE tHZOE tLZCE tHZCE tPU tPD Write Cycle tWC tSCE tAW tHA tSA tPWE tSD tHD tLZWE tHZWE VCC(typical) to the First Access Read Cycle Time Address to Data Valid Data Hold from Address Change CE LOW to Data Valid OE LOW to Data Valid OE LOW to Low-Z OE HIGH to CE LOW to High-Z[8, 9] 3 5 0 10 10 7 7 0 0 7 5 0 3 5 12 8 8 0 0 8 6 0 3 6 0 12 Low-Z[9] 0 5 3 6 2.5 10 5 0 6 100 10 10 2.5 12 6 100 12 12 μs ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Description –10 Min Max Min –12 Max Unit CE HIGH to High-Z[8, 9] CE LOW to Power up CE HIGH to Power down [10, 11] Write Cycle Time CE LOW to Write End Address Setup to Write End Address Hold from Write End Address Setup to Write Start WE Pulse Width Data Setup to Write End Data Hold from Write End WE HIGH to Low-Z[9] WE LOW to High-Z[8, 9] Notes 6. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V. 7. tPOWER is the minimum amount of time that the power supply must be at stable, typical VCC values until the first memory access can be performed. 8. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (d) of “AC Test Loads and Waveforms” on page 4. Transition is measured when the outputs enter a high impedance state. 9. At any temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any device. 10. The internal write time of the memory is defined by the overlap of CE LOW, and WE LOW. CE and WE must be LOW to initiate a write, and the transition of either of these signals can terminate the write. The input data setup and hold timing must refer to the leading edge of the signal that terminates the Write. 11. The minimum write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD. Document #: 001-00061 Rev. *D Page 5 of 10 [+] Feedback CY7C1059DV33 Switching Waveforms Figure 4. Read Cycle No. 1 (Address Transition Controlled)[12, 13] tRC ADDRESS tOHA DATA OUT PREVIOUS DATA VALID tAA DATA VALID Figure 5. Read Cycle No. 2 (OE Controlled)[13, 14] ADDRESS tRC CE tACE OE tDOE DATA OUT VCC SUPPLY CURRENT tLZOE HIGH IMPEDANCE tLZCE tPU 50% DATA VALID tPD 50% tHZOE tHZCE HIGH IMPEDANCE ICC ISB Notes 12. Device is continuously selected. OE, CE = VIL. 13. WE is HIGH for Read cycle. 14. Address valid before or coincident with CE transition LOW. Document #: 001-00061 Rev. *D Page 6 of 10 [+] Feedback CY7C1059DV33 Switching Waveforms(continued) Figure 6. Write Cycle No. 1 (WE Controlled, OE High During Write)[15, 16] tWC ADDRESS tSCE CE tAW tSA WE tPWE tHA OE tSD DATA I/O NOTE 17 tHZOE DATAIN VALID tHD Figure 7. Write Cycle No. 2 (WE Controlled, OE Low)[16] tWC ADDRESS tSCE CE tAW tSA WE tSD DATA I/O NOTE 17 tHZWE DATA VALID tPWE tHA tHD tLZWE Notes 15. Data IO is high-impedance if OE = VIH. 16. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. 17. During this period the IOs are in the output state and input signals must not be applied. Document #: 001-00061 Rev. *D Page 7 of 10 [+] Feedback CY7C1059DV33 Truth Table CE H L L L OE X L X H WE X H L H IO0–IO7 High-Z Data Out Data In High-Z Mode Power Down Read Write Selected, Outputs Disabled Power Standby (ISB) Active (ICC) Active (ICC) Active (ICC) Ordering Information Speed (ns) 10 Ordering Code CY7C1059DV33-10ZSXI CY7C1059DV33-12ZSXQ 12 CY7C1059DV33-12ZSXI Package Diagram 51-85087 51-85087 51-85087 Package Type 44-pin TSOP II (Pb-Free) 44-pin TSOP II (Pb-Free) 44-pin TSOP II (Pb-Free) Operating Range Industrial Industrial Industrial Grade Standard High reliability (< 100 ppm) Standard Contact your local Cypress sales representative for availability of these parts. Package Diagrams Figure 8. 44-Pin TSOP II (51-85087) 51-85087-*A Document #: 001-00061 Rev. *D Page 8 of 10 [+] Feedback CY7C1059DV33 Document History Page Document Title: CY7C1059DV33, 8-Mbit (1M x 8) Static RAM Document Number: 001-00061 REV. ** *A ECN NO. 342195 380574 Orig. of Change PCI SYT Submission Date See ECN See ECN New Data Sheet Redefined ICC values for Com’l and Ind’l temperature ranges ICC (Com’l): Changed from 110, 90 and 80 mA to 110, 100 and 95 mA for 8, 10 and 12 ns speed bins respectively ICC (Ind’l): Changed from 110, 90 and 80 mA to 120, 110 and 105 mA for 8, 10 and 12 ns speed bins respectively Changed the Capacitance values from 8 pF to 10 pF on Page # 3 Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901 North First Street” to “198 Champion Court” Removed -8 and -12 Speed bins from product offering, Removed Commercial Operating Range option, Modified Maximum Ratings for DC input voltage from -0.5V to -0.3V and VCC + 0.5V to VCC + 0.3V Updated footnote #7 on High-Z parameter measurement Added footnote #11 Changed the Description of IIX from Input Load Current to Input Leakage Current. Updated the Ordering Information table and Replaced Package Name column with Package Diagram. Converted from preliminary to final Added 12 ns speed bin Changed CIN and COUT specs from 16 pF to 12 pF Changed tOHA spec from 3 ns to 2.5 ns Updated Ordering information table Added Q-Grade part Description of Change *B 485796 NXR See ECN *C 1513285 VKN/AESA See ECN *D 2594352 NXR/PYRS 10/21/08 Document #: 001-00061 Rev. *D Page 9 of 10 [+] Feedback CY7C1059DV33 Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at cypress.com/sales. Products PSoC Clocks & Buffers Wireless Memories Image Sensors psoc.cypress.com clocks.cypress.com wireless.cypress.com memory.cypress.com image.cypress.com PSoC Solutions General Low Power/Low Voltage Precision Analog LCD Drive CAN 2.0b USB psoc.cypress.com/solutions psoc.cypress.com/low-power psoc.cypress.com/precision-analog psoc.cypress.com/lcd-drive psoc.cypress.com/can psoc.cypress.com/usb © Cypress Semiconductor Corporation, 2005-2008. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress. Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document #: 001-00061 Rev. *D Revised October 20, 2008 Page 10 of 10 All products and company names mentioned in this document may be the trademarks of their respective holders. [+] Feedback