CY7C1061AV33-12ZXC

CY7C1061AV33 16-Mbit (1 M × 16) Static RAM 16-Mbit (1 M × 16) Static RAM Features Functional Description ■ High speed ❐ tAA = 10 ns The CY7C1061AV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. ■ Low active power ❐ 990 mW (max) ■ Operating voltages of 3.3 ± 0.3 V ■ 2.0 V data retention ■ Automatic power down when deselected ■ TTL compatible inputs and outputs To write to the device, enable the chip (CE1 LOW and CE2 HIGH) while forcing the Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A19). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19). ■ Easy memory expansion with CE1 and CE2 features ■ Available in Pb-free and non Pb-free 54-pin TSOP II package and non Pb-free 60-ball fine-pitch ball grid array (FBGA) package To read from the device, enable the chip by taking CE1 LOW and CE2 HIGH while forcing the Output Enable (OE) LOW and the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O8 to I/O15. See Truth Table on page 8 for a complete description of Read and Write modes. The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when the device is deselected (CE1 HIGH/CE2 LOW), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or a Write operation is in progress (CE1 LOW, CE2 HIGH, and WE LOW). Logic Block Diagram 1M x 16 ARRAY SENSE AMPS A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 ROW DECODER INPUT BUFFER I/O0–I/O7 I/O8–I/O15 A10 A11 A 12 A 13 A 14 A15 A16 A17 A18 A19 COLUMN DECODER BHE WE OE BLE Cypress Semiconductor Corporation Document #: 38-05256 Rev. *K • 198 Champion Court • CE2 CE1 San Jose, CA 95134-1709 • 408-943-2600 Revised April 11, 2011 [+] Feedback CY7C1061AV33 Contents Selection Guide ................................................................ 3 Pin Configurations ........................................................... 3 Maximum Ratings ............................................................. 4 Operating Range ............................................................... 4 DC Electrical Characteristics .......................................... 4 Capacitance ...................................................................... 4 AC Test Loads and Waveforms ....................................... 4 AC Switching Characteristics ......................................... 5 Data Retention Waveform ................................................ 6 Switching Waveforms ...................................................... 6 Read Cycle No. 1 (Address Transition Controlled) ...... 6 Read Cycle No. 2 (OE Controlled) .............................. 6 Write Cycle No. 1 (CE1 or CE2 Controlled) ................ 7 Write Cycle No. 2 (WE Controlled, OE LOW) ............. 7 Write Cycle No. 3 (BHE/BLE Controlled) .................... 8 Document #: 38-05256 Rev. *K Truth Table ........................................................................ 8 Ordering Information ........................................................ 9 Ordering Code Definitions ........................................... 9 Package Diagrams .......................................................... 10 Acronyms ........................................................................ 12 Document Conventions ................................................. 12 Units of Measure ....................................................... 12 Document History Page ................................................. 13 Sales, Solutions, and Legal Information ...................... 14 Worldwide Sales and Design Support ....................... 14 Products .................................................................... 14 PSoC Solutions ......................................................... 14 Page 2 of 14 [+] Feedback CY7C1061AV33 Selection Guide –10 Unit 10 ns Commercial 275 mA Industrial 275 Commercial/Industrial 50 Maximum Access Time Maximum Operating Current Maximum CMOS Standby Current mA Pin Configurations [1, 2] 1 NC 2 60-ball FBGA Top View 4 3 5 54-pin TSOP II (Top View) 6 NC NC NC NC BLE OE A0 A1 A2 CE2 I/O 8 BHE A3 A4 CE1 I/O0 B I/O9 I/O10 A5 A6 I/O1 I/O2 C VSS I/O11 A17 A7 I/O 3 VCC D VCC I/O12 NC A16 I/O4 VSS E I/O14 I/O13 A14 A15 I/O5 I/O6 F I/O15 DNU A12 A13 WE I/O7 G A9 A10 A11 A19 H A18 A8 A I/O12 VCC I/O13 I/O14 VSS I/O15 A4 A3 A2 A1 A0 BHE CE1 VCC WE CE2 A19 A18 A17 A16 A15 I/O0 VCC I/O1 I/O2 VSS I/O3 1 2 3 54 53 4 52 51 5 6 50 49 7 8 9 10 11 12 48 47 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 I/O11 VSS I/O10 I/O9 VCC I/O8 A5 A6 A7 A8 A9 NC OE VSS DNU BLE A10 A11 A12 A13 A14 I/O7 VSS I/O6 I/O5 VCC I/O4 NC NC NC NC NC NC NC Notes 1. NC pins are not connected on the die. 2. DNU (Do Not Use) pins have to be left floating or tied to VSS to ensure proper operation. Document #: 38-05256 Rev. *K Page 3 of 14 [+] Feedback CY7C1061AV33 Maximum Ratings DC Input Voltage [3] ............................. –0.5 V to VCC + 0.5 V Exceeding maximum ratings may shorten the useful life of the device. These user guidelines are not tested. Current into Outputs (LOW)......................................... 20 mA Operating Range Storage Temperature ............................... –65 C to +150 C Ambient Temperature with Power Applied .......................................... –55 C to +125 C Range Supply Voltage on VCC to Relative GND [3] ..–0.5 V to +4.6 V Commercial VCC 0 C to +70 C 3.3 V  0.3 V –40 C to +85 C Industrial DC Voltage Applied to Outputs in High Z State [3] ................................. –0.5 V to VCC + 0.5 V Ambient Temperature DC Electrical Characteristics (Over the Operating Range) Parameter Description –10 Test Conditions VOH Output HIGH Voltage IOH = –4.0 mA IOL = 8.0 mA VOL Output LOW Voltage VIH Input HIGH Voltage VIL Input LOW Voltage [3] IIX Input Leakage Current GND < VI < VCC IOZ Output Leakage Current GND < VO < VCC, Output Disabled ICC VCC Operating Supply Current VCC = max, f = fmax = 1/tRC Min Max 2.4 – Unit V – 0.4 V 2.0 VCC + 0.3 V –0.3 0.8 V –1 +1 A –1 +1 A Commercial – 275 mA Industrial – 275 mA – 70 mA – 50 mA ISB1 Automatic CE Power-down Current —TTL Inputs CE2 < VIL, Max VCC, CE > VIH, VIN > VIH or VIN < VIL, f = fmax ISB2 Automatic CE Power-down Current —CMOS Inputs CE2 < 0.3 V, Max VCC, CE > VCC – 0.3 V, VIN > VCC – 0.3 V, or VIN < 0.3 V, f = 0 Commercial/ Industrial Capacitance [4] Parameter Description CIN Input Capacitance COUT I/O Capacitance Test Conditions TSOP II TA = 25 C, f = 1 MHz, VCC = 3.3 V FBGA Unit 6 8 pF 8 10 pF AC Test Loads and Waveforms [5] 50  VTH = 1.5 V OUTPUT Z0 = 50  (a) 30 pF* * Capacitive Load consists of all components of the test environment. 3.3 V GND R1 317  3.3 V OUTPUT 5 pF* ALL INPUT PULSES 90% 90% R2 351 INCLUDING JIG AND SCOPE (b) 10% 10% Rise time > 1 V/ns (c) Fall time: > 1 V/ns Notes 3. VIL (min) = –2.0 V for pulse durations of less than 20 ns. 4. Tested initially and after any design or process changes that may affect these parameters. 5. Valid SRAM operation does not occur until the power supplies have reached the minimum operating VDD (3.0 V). As soon as 1 ms (Tpower) after reaching the minimum operating VDD, normal SRAM operation can begin including reduction in VDD to the data retention (VCCDR, 2.0 V) voltage. Document #: 38-05256 Rev. *K Page 4 of 14 [+] Feedback CY7C1061AV33 AC Switching Characteristics (Over the Operating Range) [6] Parameter –10 Description Min Max Unit Read Cycle tpower VCC(typical) to the first access [7] 1 – ms tRC Read Cycle Time 10 – ns tAA Address to Data Valid – 10 ns tOHA Data Hold from Address Change 3 – ns tACE CE1 LOW/CE2 HIGH to Data Valid – 10 ns tDOE OE LOW to Data Valid – 5 ns tLZOE OE LOW to Low Z 1 – ns tHZOE OE HIGH to High Z [8] – 5 ns tLZCE CE1 LOW/CE2 HIGH to Low Z [8] 3 – ns tHZCE CE1 HIGH/CE2 LOW to High Z [8] – 5 ns 0 – ns – 10 ns tPU CE1 LOW/CE2 HIGH to Power Up [9] [9] tPD CE1 HIGH/CE2 LOW to Power Down tDBE Byte Enable to Data Valid – 5 ns tLZBE Byte Enable to Low Z 1 – ns Byte Disable to High Z – 5 ns tWC Write Cycle Time 10 – ns tSCE CE1 LOW/CE2 HIGH to Write End 7 – ns tAW Address Setup to Write End 7 – ns tHA Address Hold from Write End 0 – ns tSA Address Setup to Write Start 0 – ns tPWE WE Pulse Width 7 – ns tSD Data Setup to Write End 5.5 – ns tHD Data Hold from Write End tHZBE Write Cycle [10, 11] 0 – ns tLZWE WE HIGH to Low Z [8] 3 – ns tHZWE WE LOW to High Z [8] – 5 ns tBW Byte Enable to End of Write 7 – ns Notes 6. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5 V, input pulse levels of 0 to 3.0 V, and output loading of the specified IOL/IOH and specified transmission line loads. Test conditions for the Read cycle use output loading shown in (a) of the AC Test Loads and Waveforms [5] on page 4, unless specified otherwise. 7. This part has a voltage regulator that steps down the voltage from 3 V to 2 V internally. tpower time must be provided initially before a Read/Write operation is started. 8. tHZOE, tHZCE, tHZWE, tHZBE and tLZOE, tLZCE, t\LZWE, tLZBE are specified with a load capacitance of 5 pF as in (b) of AC Test Loads and Waveforms [5] on page 4. Transition is measured 200 mV from steady-state voltage. 9. These parameters are guaranteed by design and are not tested. 10. The internal Write time of the memory is defined by the overlap of CE1 LOW (CE2 HIGH) and WE LOW. Chip enables must be active and WE and byte enables must be LOW to initiate a Write, and the transition of any of these signals can terminate the Write. The input data setup and hold timing should be referenced to the leading edge of the signal that terminates the Write. 11. The minimum Write cycle time for Write Cycle No. 2 (WE controlled, OE LOW) is the sum of tHZWE and tSD. Document #: 38-05256 Rev. *K Page 5 of 14 [+] Feedback CY7C1061AV33 Data Retention Waveform DATA RETENTION MODE 3.0 V VCC 3.0 V VDR > 2 V tR tCDR CE Switching Waveforms Read Cycle No. 1 (Address Transition Controlled) [12, 13] tRC RC ADDRESS tOHA DATA OUT tAA PREVIOUS DATA VALID DATA VALID Read Cycle No. 2 (OE Controlled) [13, 14] ADDRESS tRC CE1 tPD tHZCE CE2 tACE BHE/BLE tDBE tHZBE tLZBE OE tHZOE tDOE DATA OUT tLZOE HIGH IMPEDANCE HIGH IMPEDANCE DATA VALID tLZCE VCC SUPPLY CURRENT tPU 50% 50% ICC ISB Notes 12. Device is continuously selected. OE, CE, BHE or BHE, or both = VIL. CE2 = VIH. 13. WE is HIGH for Read cycle. 14. Address valid prior to or coincident with CE1 transition LOW and CE2 transition HIGH. Document #: 38-05256 Rev. *K Page 6 of 14 [+] Feedback CY7C1061AV33 Switching Waveforms (continued) Write Cycle No. 1 (CE1 or CE2 Controlled) [15, 16] tWC ADDRESS tSCE CE1 CE2 tSA tAW tHA tPWE WE tBW BHE/BLE OE tHD tSD DATA IO NOTE 17 VALID DATA tHZOE Write Cycle No. 2 (WE Controlled, OE LOW) [15, 16] tWC ADDRESS tSCE CE1 CE2 tBW BHE/BLE tAW tSA tHA tPWE WE tSD DATA IO NOTE 17 tHD VALID DATA tHZWE tLZWE Notes 15. Data IO is high impedance if OE, or BHE or BLE or both = VIH. 16. If CE1 goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state. 17. During this period, the IOs are in output state and input signals should not be applied. Document #: 38-05256 Rev. *K Page 7 of 14 [+] Feedback CY7C1061AV33 Switching Waveforms (continued) Write Cycle No. 3 (BHE/BLE Controlled) tWC ADDRESS CE1 CE2 tSCE tAW tHA tBW BHE/BLE tSA tPWE WE tSD NOTE 18 DATA IO tHD VALID DATA Truth Table CE1 CE2 OE WE BLE BHE H X X X X X High Z I/O0–I/O7 High Z I/O8–I/O15 Power Down Mode Standby (ISB) Power X L X X X X High Z High Z Power Down Standby (ISB) L H L H L L Data Out Data Out Read All Bits Active (ICC) L H L H L H Data Out High Z Read Lower Bits Only Active (ICC) L H L H H L High Z Data Out Read Upper Bits Only Active (ICC) L H X L L L Data In Data In Write All Bits Active (ICC) L H X L L H Data In High Z Write Lower Bits Only Active (ICC) L H X L H L High Z Data In Write Upper Bits Only Active (ICC) L H H H X X High Z High Z Selected, Outputs Disabled Active (ICC) Note 18. During this period, the IOs are in output state and input signals should not be applied. Document #: 38-05256 Rev. *K Page 8 of 14 [+] Feedback CY7C1061AV33 Ordering Information The following table lists the CY7C1061AV33 key package features and ordering codes. The table contains only the parts that are currently available. If you do not see what you are looking for, contact your local sales representative. For more information, visit the Cypress website at www.cypress.com and refer to the product summary page at http://www.cypress.com/products. Speed (ns) 10 Ordering Code CY7C1061AV33-10ZXC Package Diagram 51-85160 Package Type Operating Range 54-pin TSOP II (Pb-free) Commercial Industrial CY7C1061AV33-10ZXI 51-85160 54-pin TSOP II (Pb-free) CY7C1061AV33-10BAXI 51-85162 60-ball FBGA (Pb-free) Ordering Code Definitions CY 7 C 1 06 1 A V33 - 10 XXX X Temperature Range: X = C or I C = Commercial; I = Industrial Package Type: XXX = ZX or BAX ZX = 54-pin TSOP II (Pb-free) BAX = 60-ball FBGA (Pb-free) Speed: 10 ns V33 = Voltage range (3 V to 3.6 V) A = 0.16 µm Technology 1 = Data width × 16-bits 06 = 16-Mbit density 1 = Fast Asynchronous SRAM family Technology Code: C = CMOS 7 = SRAM CY = Cypress Document #: 38-05256 Rev. *K Page 9 of 14 [+] Feedback CY7C1061AV33 Package Diagrams Figure 1. 54-pin TSOP II (22.4 × 11.84 × 1.0 mm), 51-85160 51-85160 *A Document #: 38-05256 Rev. *K Page 10 of 14 [+] Feedback CY7C1061AV33 Package Diagrams (continued) Figure 2. 60-ball FBGA (8 × 20 × 1.2 mm), 51-85162 51-85162 *E Document #: 38-05256 Rev. *K Page 11 of 14 [+] Feedback CY7C1061AV33 Acronyms Document Conventions Acronym Description Units of Measure CMOS complementary metal oxide semiconductor FBGA fine-pitch ball grid array ns nano seconds I/O input/output V Volts OE output enable µA micro Amperes SRAM static random access memory mA milli Amperes TSOP thin small-outline package mm milli meter TTL transistor-transistor logic ms milli seconds WE Write Enable MHz Mega Hertz Document #: 38-05256 Rev. *K Symbol Unit of Measure pF pico Farad mW milli Watts W Watts °C degree Celcius  ohms % percent Page 12 of 14 [+] Feedback CY7C1061AV33 Document History Page Document Title: CY7C1061AV33 16-Mbit (1 M × 16) Static RAM Document Number: 38-05256 Revision ECN Submission Date Orig. of Change Description of Change ** 113725 03/28/02 NSL New Data Sheet *A 117058 07/31/02 DFP Removed 15-ns bin *B 117989 08/30/02 DFP Added 8-ns bin Changed Icc for 8, 10, 12 bins tpower changed from 1 s to 1 ms. Load Cap Comment changed (for Tx line load) tSD changed to 5.5 ns for the 10-ns bin Changed some 8-ns bin numbers (tHZ, tDOE, tDBE) Removed hz