CY7C107BN
1M x 1 Static RAM
Features
Functional Description
■
High speed
❐ tAA = 15 ns
■
CMOS for optimum speed/power
■
Automatic power down when deselected
■
TTL-compatible inputs and outputs
The CY7C107BN is a high performance CMOS static RAMs
organized as 1,048,576 words by 1 bit. Easy memory expansion
is provided by an active LOW Chip Enable (CE) and tristate
drivers. The devices has an automatic power down feature that
reduces power consumption by more than 65% when
deselected.
Writing to the devices is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. Data on the input pin
(DIN) is written into the memory location specified on the address
pins (A0 through A19).
Reading from the devices is accomplished by taking Chip Enable
(CE) LOW while Write Enable (WE) remains HIGH. Under these
conditions, the contents of the memory location specified by the
address pins appear on the data output (DOUT) pin.
The output pin (DOUT) is placed in a high impedance state when
the device is deselected (CE HIGH) or during a write operation
(CE and WE LOW).
The CY7C107BN is available in a standard 400-mil-wide SOJ.
Logic Block Diagram
DIN
512 x 2048
ARRAY
DOUT
POWER
DOWN
CE
WE
A9
A 10
A 11
A 12
A 13
A 14
A 15
A 16
A 17
A 18
A 19
COLUMN
DECODER
SENSE AMPS
ROW DECODER
INPUT BUFFER
A0
A1
A2
A3
A4
A5
A6
A7
A8
Cypress Semiconductor Corporation
Document #: 001-06426 Rev. *A
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised March 15, 2010
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CY7C107BN
Pin Configuration
Figure 1. 28-Pin SOJ (Top View)
A10
A11
A12
A13
A14
A15
NC
A16
A17
A18
A19
DOUT
WE
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
A9
A8
A7
A6
A5
A4
NC
A3
A2
A1
A0
DIN
CE
Selection Guide
Description
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum CMOS Standby Current ISB2 (mA)
Document #: 001-06426 Rev. *A
7C107BN-15
15
80
2
Page 2 of 8
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CY7C107BN
DC Input Voltage[1]..................................-0.5V to VCC + 0.5V
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature .................................. -65°C to +150°C
Ambient Temperature with
Power Applied ............................................. -55°C to +125°C
Supply Voltage on VCC Relative to GND[1] ..... -0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1] .....................................-0.5V to VCC + 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
Latch Up Current ..................................................... >200 mA
Operating Range
Range
Commercial
Ambient Temperature[2]
0°C to +70°C
VCC
5V ± 10%
Electrical Characteristics Over the Operating Range
Parameter
Description
Test Conditions
VOH
Output HIGH Voltage
VCC = Min, IOH = –4.0 mA
VOL
Output LOW Voltage
VCC = Min, IOL = 8.0 mA
VIH
Input HIGH Voltage
Voltage[1]
7C107BN-15
Min
Max
Unit
2.4
V
0.4
V
2.2
VCC + 0.3
V
-0.3
0.8
V
VIL
Input LOW
IIX
Input Leakage Current
GND < VI < VCC
-1
+1
mA
IOZ
Output Leakage Current
GND < VI < VCC,
Output Disabled
–5
+5
mA
IOS
Output Short Circuit
Current[3]
VCC = Max, VOUT = GND
-300
mA
ICC
VCC Operating Supply
Current
VCC = Max, IOUT = 0 mA,
f = fMAX = 1/tRC
80
mA
ISB1
Automatic CE Power Down
Current— TTL Inputs
Max VCC, CE > VIH, VIN >VIH or
VIN < VIL, f = f MAX
20
mA
ISB2
Automatic CE Power Down
Current — CMOS Inputs
Max VCC, CE > VCC – 0.3V,
VIN > VCC – 0.3V or VIN < 0.3V, f = 0
2
mA
Capacitance[4]
Parameter
CIN: Addresses
Description
Input Capacitance
CIN: Controls
COUT
Test Conditions
TA = 25 × C, f = 1 MHz,
VCC = 5.0V
Output Capacitance
Max
Unit
7
pF
10
pF
10
pF
Notes
1. VIL (min.) = –2.0V for pulse durations of less than 20 ns.
2. TA is the “Instant On” case temperature.
3. Not more than 1 output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
4. Tested initially and after any design or process changes that may affect these parameters.
Document #: 001-06426 Rev. *A
Page 3 of 8
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CY7C107BN
Figure 2. AC Test Loads and Waveforms
R1 480Ω
5V
R1 480Ω
5V
OUTPUT
R2
255Ω
30 pF
INCLUDING
JIG AND
SCOPE
(a)
Equivalent to:
OUTPUT
ALL INPUT PULSES
3.0V
OUTPUT
5 pF
R2
255Ω
INCLUDING
JIG AND
SCOPE (b)
10%
GND
90%
90%
10%
≤ 3 ns
≤ 3 ns
THÉVENIN EQUIVALENT
167Ω
1.73V
Switching Characteristics[5] Over the Operating Range
Parameter
Description
7C107BN-15
Min
Max
Unit
READ CYCLE
tRC
Read Cycle Time
tAA
Address to Data Valid
tOHA
Data Hold from Address Change
tACE
CE LOW to Data Valid
tLZCE
CE LOW to Low
15
Z[6]
CE HIGH to High
tPU
CE LOW to Power Up
tPD
WRITE
15
3
3
ns
ns
7
0
CE HIGH to Power Down
ns
ns
15
Z[6, 7]
tHZCE
ns
ns
ns
15
ns
CYCLE[8]
tWC
Write Cycle Time
15
ns
tSCE
CE LOW to Write End
12
ns
tAW
Address Setup to Write End
12
ns
tHA
Address Hold from Write End
0
ns
tSA
Address Setup to Write Start
0
ns
tPWE
WE Pulse Width
12
ns
tSD
Data Setup to Write End
8
ns
tHD
Data Hold from Write End
0
ns
Z[6]
tLZWE
WE HIGH to Low
tHZWE
WE LOW to High Z[6, 7]
3
ns
7
ns
Notes
5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
IOL/IOH and 30-pF load capacitance.
6. At any given temperature and voltage condition, tHZCE is less than tLZCE and tHZWE is less than tLZWE for any given device.
7. tHZCE and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.
8. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. CE and WE must be LOW to initiate a write, and the transition of any
of these signals can terminate the write. The input data setup and hold timing should be referenced to the leading edge of the signal that terminates the write.
Document #: 001-06426 Rev. *A
Page 4 of 8
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CY7C107BN
Switching Waveforms
Figure 3. Read Cycle No. 1[10, 11]
tRC
ADDRESS
tAA
tOHA
DATA OUT
PREVIOUS DATA VALID
DATA VALID
Figure 4. Read Cycle No. 2[11, 12]
ADDRESS
tRC
CE
tACE
tHZCE
tLZCE
DATA OUT
VCC
SUPPLY
CURRENT
HIGH IMPEDANCE
HIGH
IMPEDANCE
DATA VALID
tPD
tPU
50%
50%
ICC
ISB
Figure 5. Write Cycle No. 1 (CE Controlled)[13]
tWC
ADDRESS
tSA
tSCE
CE
tHA
tAW
tPWE
WE
tSD
DATA IN
DATA OUT
tHD
DATA VALID
HIGH IMPEDANCE
Notes
9. No input may exceed VCC + 0.5V.
10. Device is continuously selected, CE = VIL.
11. WE is HIGH for read cycle.
12. Address valid prior to or coincident with CE transition LOW.
13. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state.
Document #: 001-06426 Rev. *A
Page 5 of 8
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CY7C107BN
Switching Waveforms (continued)
Figure 6. Write Cycle No. 2 (WE Controlled)[13]
tWC
ADDRESS
tSCE
CE
tAW
tSA
tHA
tPWE
WE
tSD
DATA IN
tHD
DATA VALID
tHZWE
DATA OUT
tLZWE
HIGH IMPEDANCE
DATA UNDEFINED
Truth Table
CE
WE
DOUT
Mode
Power
H
X
High Z
Power Down
Standby (ISB)
L
H
Data Out
Read
Active (ICC)
L
L
High Z
Write
Active (ICC)
Ordering Information
Speed
(ns)
15
Ordering Code
CY7C107BN-15VC
Package
Diagram
51-85032
Package Type
28-Pin (400-Mil) Molded SOJ
Operating
Range
Commercial
Contact your local sales representative regarding availability of these parts
Document #: 001-06426 Rev. *A
Page 6 of 8
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CY7C107BN
Package Diagrams
Figure 7. 28-Pin (400 Mil) Molded SOJ (51-85032)
PIN 1 I.D
14
1
.435
.445
.395
.405
15
DIMENSIONS IN INCHES
MIN.
MAX.
28
.720
.730
SEATING PLANE
NO CHAMFER
.128
.148
.026
.032
.050
TYP.
.015
.020
0.004
.025 MIN.
.007
.013
.360
.380
NOTES :
1. PACKAGE WEIGHT : 1.24g
2. JEDEC REFERENCE : MS-027
Document #: 001-06426 Rev. *A
51-85032.*D
Page 7 of 8
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CY7C107BN
Document History Page
Document Title: CY7C107BN 1M x 1 Static RAM
Document Number: 001-06426
REV.
ECN NO.
Submission
Date
Orig. of
Change
Description of Change
**
423847
See ECN
NXR
New Data Sheet
*A
2891262
03/12/2010
VKN
Removed CY7C1007BN from the datasheet,
Removed Industrial operating grade,
Removed 28-Pin (300-Mil) Molded SOJ package,
Updated 28-Pin (400-Mil) Molded SOJ POD
Updated Ordering Infomation table
Updated URLs in Sales, Solutions, and Legal Information
Sales, Solutions, and Legal Information
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assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document #: 001-06426 Rev. *A
Revised March 15, 2010
Page 8 of 8
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