CY7C1312CV18-250BZC

CY7C1312CV18 CY7C1314CV18 18-Mbit QDR® II SRAM 2-Word Burst Architecture Features Configurations ■ Separate independent Read and Write Data Ports ❐ Supports concurrent transactions CY7C1312CV18 – 1M x 18 CY7C1314CV18 – 512K x 36 ■ 250 MHz Clock for High Bandwidth Functional Description ■ 2-word Burst on all Accesses ■ Double Data Rate (DDR) Interfaces on both Read and Write Ports (data transferred at 500 MHz) at 250 MHz ■ Two Input Clocks (K and K) for precise DDR Timing ❐ SRAM uses rising edges only ■ Two Input Clocks for Output Data (C and C) to minimize Clock Skew and Flight Time mismatches ■ Echo Clocks (CQ and CQ) simplify Data Capture in High Speed Systems ■ Single Multiplexed Address Input Bus latches Address Inputs for both Read and Write Ports ■ Separate Port Selects for Depth Expansion ■ Synchronous internally Self-timed Writes ■ QDR® II operates with 1.5 Cycle Read Latency when Delay Lock Loop (DLL) is enabled ■ Operates similar to a QDR I Device with one Cycle Read Latency in DLL Off Mode ■ Available in x18, and x36 Configurations ■ Full Data Coherency, providing Most Current Data ■ Core VDD = 1.8V (±0.1V); IO VDDQ = 1.4V to VDD ■ Available in 165-Ball FBGA Package (13 x 15 x 1.4 mm) ■ Offered in both Pb-free and non Pb-free Packages ■ Variable Drive HSTL Output Buffers ■ JTAG 1149.1 compatible Test Access Port ■ Delay Lock Loop (DLL) for accurate Data Placement The CY7C1312CV18, and CY7C1314CV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture. QDR II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has data outputs to support read operations and the write port has data inputs to support write operations. QDR II architecture has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus required with common I/O devices. Access to each port is accomplished through a common address bus. The read address is latched on the rising edge of the K clock and the write address is latched on the rising edge of the K clock. Accesses to the QDR II read and write ports are completely independent of one another. To maximize data throughput, both read and write ports are provided with DDR interfaces. Each address location is associated with two 18-bit words (CY7C1312CV18), or 36-bit words (CY7C1314CV18) that burst sequentially into or out of the device. Because data can be transferred into and out of the device on every rising edge of both input clocks (K and K and C and C), memory bandwidth is maximized while simplifying system design by eliminating bus “turn-arounds”. Depth expansion is accomplished with port selects, which enables each port to operate independently. All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the C or C (or K or K in a single clock domain) input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry. Selection Guide Description 250 MHz 200 MHz 167 MHz Unit 250 200 167 MHz x18 800 675 600 mA x36 900 750 650 Maximum Operating Frequency Maximum Operating Current Cypress Semiconductor Corporation Document #: 001-07164 Rev. *G • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised December 07, 2009 [+] Feedback CY7C1312CV18 CY7C1314CV18 Logic Block Diagram (CY7C1312CV18) K CLK Gen. DOFF 19 Address Register Read Add. Decode K Write Reg 512K x 18 Array Address Register Write Reg 512K x 18 Array A(18:0) 19 18 Write Add. Decode D[17:0] A(18:0) RPS Control Logic C Read Data Reg. C CQ 36 VREF WPS 18 Control Logic 18 BWS[1:0] Reg. Reg. 18 Reg. 18 CQ 18 Q[17:0] Logic Block Diagram (CY7C1314CV18) K CLK Gen. DOFF 18 Address Register Read Add. Decode K Write Reg 256K x 36 Array Address Register Write Reg 256K x 36 Array A(17:0) 18 36 Write Add. Decode D[35:0] A(17:0) RPS Control Logic C Read Data Reg. C CQ 72 VREF WPS 36 Control Logic BWS[3:0] Document #: 001-07164 Rev. *G 36 Reg. Reg. 36 Reg. 36 CQ 36 Q[35:0] Page 2 of 25 [+] Feedback CY7C1312CV18 CY7C1314CV18 Contents Features .............................................................................. 1 Configurations .................................................................... 1 Functional Description ....................................................... 1 Selection Guide .................................................................. 1 Logic Block Diagram (CY7C1312CV18) ............................ 2 Logic Block Diagram (CY7C1314CV18) ............................ 2 Contents .............................................................................. 3 Pin Configuration ............................................................... 4 165-Ball FBGA (13 x 15 x 1.4 mm) Pinout .................... 4 Pin Definitions .................................................................... 5 Functional Overview .......................................................... 7 Read Operations ........................................................... 7 Write Operations ........................................................... 7 Byte Write Operations ................................................... 7 Single Clock Mode ........................................................ 7 Concurrent Transactions ............................................... 7 Depth Expansion ........................................................... 7 Programmable Impedance ............................................ 8 Echo Clocks .................................................................. 8 DLL ................................................................................ 8 Application Example .......................................................... 8 Truth Table .......................................................................... 9 Write Cycle Descriptions ................................................... 9 Write Cycle Descriptions ................................................. 10 IEEE 1149.1 Serial Boundary Scan (JTAG) .................... 11 Disabling the JTAG Feature ........................................ 11 Test Access Port—Test Clock ..................................... 11 Test Mode Select (TMS) ............................................. 11 Test Data-In (TDI) ....................................................... 11 Test Data-Out (TDO) ................................................... 11 Performing a TAP Reset ............................................. 11 TAP Registers ............................................................. 11 TAP Instruction Set ..................................................... 11 Document #: 001-07164 Rev. *G TAP Controller State Diagram ......................................... 13 TAP Controller Block Diagram ........................................ 14 TAP Electrical Characteristics ........................................ 14 TAP AC Switching Characteristics ................................. 15 TAP Timing and Test Conditions .................................... 15 Identification Register Definitions .................................. 16 Scan Register Sizes ......................................................... 16 Instruction Codes ............................................................. 16 Boundary Scan Order ...................................................... 17 Power Up Sequence in QDR II SRAM ............................. 18 Power Up Sequence ................................................... 18 DLL Constraints .......................................................... 18 Maximum Ratings ............................................................. 19 Operating Range .............................................................. 19 Neutron Soft Error Immunity ........................................... 19 Electrical Characteristics ................................................ 19 DC Electrical Characteristics ....................................... 19 AC Electrical Characteristics ....................................... 20 Capacitance ...................................................................... 20 Thermal Resistance ......................................................... 20 Switching Characteristics ............................................... 21 Switching Waveforms ...................................................... 22 Ordering Information ....................................................... 23 Package Diagram ............................................................. 24 Sales, Solutions, and Legal Information ........................ 25 Worldwide Sales and Design Support ......................... 25 Document History Page ................................................... 25 Products ...................................................................... 25 Page 3 of 25 [+] Feedback CY7C1312CV18 CY7C1314CV18 Pin Configuration The pin configuration for CY7C1312CV18 and CY7C1314CV18 follow.[1] 165-Ball FBGA (13 x 15 x 1.4 mm) Pinout CY7C1312CV18 (1M x 18) 1 2 3 4 5 6 7 8 9 10 11 WPS BWS1 K NC/288M RPS A NC/72M CQ D9 A NC K BWS0 A NC NC Q8 A CQ NC/144M NC/36M B NC C NC NC D10 VSS A A A VSS NC Q7 D8 D NC D11 Q10 VSS VSS VSS VSS VSS NC NC D7 E NC NC Q11 VDDQ VSS VSS VSS VDDQ NC D6 Q6 F NC Q12 D12 VDDQ VDD VSS VDD VDDQ NC NC Q5 Q9 G NC D13 Q13 VDDQ VDD VSS VDD VDDQ NC NC D5 H DOFF VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J NC NC D14 VDDQ VDD VSS VDD VDDQ NC Q4 D4 K NC NC Q14 VDDQ VDD VSS VDD VDDQ NC D3 Q3 L NC Q15 D15 VDDQ VSS VSS VSS VDDQ NC NC Q2 M NC NC D16 VSS VSS VSS VSS VSS NC Q1 D2 N NC D17 Q16 VSS A A A VSS NC NC D1 P NC NC Q17 A A C A A NC D0 Q0 R TDO TCK A A A C A A A TMS TDI 7 8 9 10 11 CY7C1314CV18 (512K x 36) 1 2 3 NC/288M NC/72M 4 5 6 A CQ WPS BWS2 K BWS1 RPS B Q27 Q18 D18 A BWS3 K BWS0 A NC/36M NC/144M D17 Q17 CQ Q8 C D27 Q28 D19 VSS A A A VSS D16 Q7 D8 D D28 D20 Q19 VSS VSS VSS VSS VSS Q16 D15 D7 E Q29 D29 Q20 VDDQ VSS VSS VSS VDDQ Q15 D6 Q6 F Q30 Q21 D21 VDDQ VDD VSS VDD VDDQ D14 Q14 Q5 G D30 D22 Q22 VDDQ VDD VSS VDD VDDQ Q13 D13 D5 H DOFF VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J D31 Q31 D23 VDDQ VDD VSS VDD VDDQ D12 Q4 D4 K Q32 D32 Q23 VDDQ VDD VSS VDD VDDQ Q12 D3 Q3 L Q33 Q24 D24 VDDQ VSS VSS VSS VDDQ D11 Q11 Q2 M D33 Q34 D25 VSS VSS VSS VSS VSS D10 Q1 D2 N D34 D26 Q25 VSS A A A VSS Q10 D9 D1 P Q35 D35 Q26 A A C A A Q9 D0 Q0 R TDO TCK A A A C A A A TMS TDI Note 1. NC/36M, NC/72M, NC/144M, and NC/288M are not connected to the die and can be tied to any voltage level. Document #: 001-07164 Rev. *G Page 4 of 25 [+] Feedback CY7C1312CV18 CY7C1314CV18 Pin Definitions Pin Name I/O Pin Description D[x:0] InputData Input Signals. Sampled on the rising edge of K and K clocks during valid write operations. Synchronous CY7C1312CV18 - D[17:0] CY7C1314CV18 - D[35:0] WPS InputWrite Port Select − Active LOW. Sampled on the rising edge of the K clock. When asserted active, a Synchronous write operation is initiated. Deasserting deselects the write port. Deselecting the write port ignores D[x:0]. BWS0, BWS1, BWS2, BWS3 InputByte Write Select 0, 1, 2, and 3 − Active LOW. Sampled on the rising edge of the K and K clocks during Synchronous write operations. Used to select which byte is written into the device during the current portion of the write operations. Bytes not written remain unaltered. CY7C1312CV18 − BWS0 controls D[8:0], BWS1 controls D[17:9]. CY7C1314CV18 − BWS0 controls D[8:0], BWS1 controls D[17:9],BWS2 controls D[26:18] and BWS3 controls D[35:27]. All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select ignores the corresponding byte of data and it is not written into the device. A InputAddress Inputs. Sampled on the rising edge of the K (Read address) and K (Write address) clocks during Synchronous active read and write operations. These address inputs are multiplexed for both read and write operations. Internally, the device is organized as 1M x 18 (2 arrays each of 512K x 18) for CY7C1312CV18 and 512K x 36 (2 arrays each of 256K x 36) for CY7C1314CV18. Therefore, only 19 address inputs are needed to access the entire memory array of CY7C1312CV18 and 18 address inputs for CY7C1314CV18. These inputs are ignored when the appropriate port is deselected. Q[x:0] OutputsData Output Signals. These pins drive out the requested data during a read operation. Valid data is Synchronous driven out on the rising edge of both the C and C clocks during read operations, or K and K when in single clock mode. When the read port is deselected, Q[x:0] are automatically tristated. CY7C1312CV18 − Q[17:0] CY7C1314CV18 − Q[35:0] RPS InputRead Port Select − Active LOW. Sampled on the rising edge of positive input clock (K). When active, a Synchronous read operation is initiated. Deasserting deselects the read port. When deselected, the pending access is allowed to complete and the output drivers are automatically tristated following the next rising edge of the C clock. Each read access consists of a burst of two sequential transfers. C Input Clock Positive Input Clock for Output Data. C is used in conjunction with C to clock out the read data from the device. C and C can be used together to deskew the flight times of various devices on the board back to the controller. See Application Example on page 8 for further details. C Input Clock Negative Input Clock for Output Data. C is used in conjunction with C to clock out the read data from the device. C and C can be used together to deskew the flight times of various devices on the board back to the controller. See Application Example on page 8 for further details. K Input Clock Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device and to drive out data through Q[x:0] when in single clock mode. All accesses are initiated on the rising edge of K. K Input Clock Negative Input Clock Input. K is used to capture synchronous inputs being presented to the device and to drive out data through Q[x:0] when in single clock mode. CQ Echo Clock CQ Referenced with Respect to C. This is a free - running clock and is synchronized to the Input clock for output data (C) of the QDR II. In the single clock mode, CQ is generated with respect to K. The timings for the echo clocks is shown in the Switching Characteristics on page 21. CQ Echo Clock CQ Referenced with Respect to C. This is a free - running clock and is synchronized to the Input clock for output data (C) of the QDR II. In the single clock mode, CQ is generated with respect to K. The timings for the echo clocks is shown in the Switching Characteristics on page 21. ZQ Input Output Impedance Matching Input. This input is used to tune the device outputs to the system data bus impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 x RQ, where RQ is a resistor connected between ZQ and ground. Alternatively, this pin can be connected directly to VDDQ, which enables the minimum impedance mode. This pin cannot be connected directly to GND or left unconnected. Document #: 001-07164 Rev. *G Page 5 of 25 [+] Feedback CY7C1312CV18 CY7C1314CV18 Pin Definitions Pin Name DOFF (continued) I/O Pin Description Input DLL Turn Off − Active LOW. Connecting this pin to ground turns off the DLL inside the device. The timing in the DLL turned off operation differs from those listed in this data sheet. For normal operation, this pin can be connected to a pull up through a 10 KΩ or less pull up resistor. The device behaves in DDR-I mode when the DLL is turned off. In this mode, the device can be operated at a frequency of up to 167 MHz with QDR I timing. TDO Output TCK Input TDO for JTAG. TCK Pin for JTAG. TDI Input TDI Pin for JTAG. TMS Input TMS Pin for JTAG. NC N/A Not Connected to the Die. Can be tied to any voltage level. NC/36M N/A Not Connected to the Die. Can be tied to any voltage level. NC/72M N/A Not Connected to the Die. Can be tied to any voltage level. NC/144M N/A Not Connected to the Die. Can be tied to any voltage level. N/A Not Connected to the Die. Can be tied to any voltage level. NC/288M VREF VDD VSS VDDQ InputReference Reference Voltage Input. Static input used to set the reference level for HSTL inputs, Outputs, and AC measurement points. Power Supply Power Supply Inputs to the Core of the Device. Ground Ground for the Device. Power Supply Power Supply Inputs for the Outputs of the Device. Document #: 001-07164 Rev. *G Page 6 of 25 [+] Feedback CY7C1312CV18 CY7C1314CV18 Functional Overview The CY7C1312CV18, and CY7C1314CV18 are synchronous pipelined Burst SRAMs equipped with a read port and a write port. The read port is dedicated to read operations and the write port is dedicated to write operations. Data flows into the SRAM through the write port and flows out through the read port. These devices multiplex the address inputs to minimize the number of address pins required. By having separate read and write ports, the QDR II completely eliminates the need to “turn-around” the data bus and avoids any possible data contention, thereby simplifying system design. Each access consists of two 18-bit data transfers in the case of CY7C1312CV18, and two 36-bit data transfers in the case of CY7C1314CV18 in one clock cycle. This device operates with a read latency of one and half cycles when DOFF pin is tied HIGH. When DOFF pin is set LOW or connected to VSS then the device behaves in QDR I mode with a read latency of one clock cycle. Accesses for both ports are initiated on the rising edge of the positive input clock (K). All synchronous input timing is referenced from the rising edge of the input clocks (K and K) and all output timing is referenced to the rising edge of the output clocks (C and C, or K and K when in single clock mode). All synchronous data inputs (D[x:0]) pass through input registers controlled by the input clocks (K and K). All synchronous data outputs (Q[x:0]) pass through output registers controlled by the rising edge of the output clocks (C and C, or K and K when in single clock mode). All synchronous control (RPS, WPS, BWS[x:0]) inputs pass through input registers controlled by the rising edge of the input clocks (K and K). CY7C1312CV18 is described in the following sections. The same basic descriptions apply to CY7C1314CV18. Read Operations The CY7C1312CV18 is organized internally as two arrays of 512K x 18. Accesses are completed in a burst of two sequential 18-bit data words. Read operations are initiated by asserting RPS active at the rising edge of the positive input clock (K). The address is latched on the rising edge of the K clock. The address presented to the address inputs is stored in the read address register. Following the next K clock rise the corresponding lowest order 18-bit word of data is driven onto the Q[17:0] using C as the output timing reference. On the subsequent rising edge of C, the next 18-bit data word is driven onto the Q[17:0]. The requested data is valid 0.45 ns from the rising edge of the output clock (C and C or K and K when in single clock mode). Synchronous internal circuitry automatically tristates the outputs following the next rising edge of the output clocks (C/C). This allows for a seamless transition between devices without the insertion of wait states in a depth expanded memory. Document #: 001-07164 Rev. *G Write Operations Write operations are initiated by asserting WPS active at the rising edge of the positive input clock (K). On the same K clock rise, the data presented to D[17:0] is latched and stored into the lower 18-bit write data register, provided BWS[1:0] are both asserted active. On the subsequent rising edge of the negative input clock (K), the address is latched and the information presented to D[17:0] is stored into the write data register, provided BWS[1:0] are both asserted active. The 36 bits of data are then written into the memory array at the specified location. When deselected, the write port ignores all inputs after completion of pending write operations. Byte Write Operations Byte write operations are supported by the CY7C1312CV18. A write operation is initiated as described in the Write Operations section. The bytes that are written are determined by BWS0 and BWS1, which are sampled with each 18-bit data word. Asserting the appropriate Byte Write Select input during the data portion of a write latches the data being presented and writes it into the device. Deasserting the Byte Write Select input during the data portion of a write allows the data stored in the device for that byte to remain unaltered. This feature can be used to simplify read, modify, or write operations to a byte write operation. Single Clock Mode The CY7C1312CV18 can be used with a single clock that controls both the input and output registers. In this mode, the device recognizes only a single pair of input clocks (K and K) that control both the input and output registers. This operation is identical to the operation if the device had zero skew between the K/K and C/C clocks. All timing parameters remain the same in this mode. To use this mode of operation, the user must tie C and C HIGH at power on. This function is a strap option and not alterable during device operation. Concurrent Transactions The read and write ports on the CY7C1312CV18 operate independently of one another. As each port latches the address inputs on different clock edges, the user can read or write to any location, regardless of the transaction on the other port. The user can start reads and writes in the same clock cycle. If the ports access the same location at the same time, the SRAM delivers the most recent information associated with the specified address location. This includes forwarding data from a write cycle that was initiated on the previous K clock rise. Depth Expansion The CY7C1312CV18 has a port select input for each port. This enables for easy depth expansion. Both port selects are sampled on the rising edge of the positive input clock only (K). Each port select input can deselect the specified port. Deselecting a port does not affect the other port. All pending transactions (read and write) are completed prior to the device being deselected. Page 7 of 25 [+] Feedback CY7C1312CV18 CY7C1314CV18 Programmable Impedance DLL An external resistor, RQ, must be connected between the ZQ pin on the SRAM and VSS to allow the SRAM to adjust its output driver impedance. The value of RQ must be 5x the value of the intended line impedance driven by the SRAM. The allowable range of RQ to guarantee impedance matching with a tolerance of ±15% is between 175Ω and 350Ω, with VDDQ = 1.5V. The output impedance is adjusted every 1024 cycles upon power up to account for drifts in supply voltage and temperature. These chips use a Delay Lock Loop (DLL) that is designed to function between 120 MHz and the specified maximum clock frequency. During power up, when the DOFF is tied HIGH, the DLL is locked after 1024 cycles of stable clock. The DLL can also be reset by slowing or stopping the input clock K and K for a minimum of 30 ns. However, it is not necessary to reset the DLL to lock to the desired frequency. The DLL automatically locks 1024 clock cycles after a stable clock is presented. The DLL may be disabled by applying ground to the DOFF pin. When the DLL is turned off, the device behaves in QDR I mode (with one cycle latency and a longer access time). For information refer to the application note DLL Considerations in QDRII/DDRII. Echo Clocks Echo clocks are provided on the QDR II to simplify data capture on high-speed systems. Two echo clocks are generated by the QDR II. CQ is referenced with respect to C and CQ is referenced with respect to C. These are free running clocks and are synchronized to the output clock (C/C) of the QDR II. In single clock mode, CQ is generated with respect to K and CQ is generated with respect to K. The timing for the echo clocks is shown in the Switching Characteristics on page 21. Application Example Figure 1 shows two QDR II used in an application. Figure 1. Application Example SRAM #1 Vt R D A R P S # W P S # B W S # ZQ CQ/CQ# Q C C# K K# DATA IN DATA OUT Address RPS# BUS WPS# MASTER BWS# (CPU CLKIN/CLKIN# or Source K ASIC) Source K# R = 250ohms SRAM #2 R P S # D A R W P S # B W S # ZQ R = 250ohms CQ/CQ# Q C C# K K# Vt Vt Delayed K Delayed K# R Document #: 001-07164 Rev. *G R = 50ohms Vt = Vddq/2 Page 8 of 25 [+] Feedback CY7C1312CV18 CY7C1314CV18 Truth Table The truth table for CY7C1312CV18, and CY7C1314CV18 follows.[2, 3, 4, 5, 6, 7] Operation K RPS WPS DQ DQ Write Cycle: Load address on the rising edge of K; input write data on K and K rising edges. L-H X L D(A + 0) at K(t) ↑ Read Cycle: Load address on the rising edge of K; wait one and a half cycle; read data on C and C rising edges. L-H L X Q(A + 0) at C(t + 1) ↑ Q(A + 1) at C(t + 2) ↑ NOP: No Operation L-H H H D=X Q = High-Z D=X Q = High-Z Stopped X X Previous State Previous State Standby: Clock Stopped D(A + 1) at K(t) ↑ Write Cycle Descriptions The write cycle description table for CY7C1312CV18 follows.[2, 8] BWS0 BWS1 K L L L–H L L – L H L–H L H – H L L–H H L – H H L–H H H – K – Comments During the data portion of a write sequence : Both bytes (D[17:0]) are written into the device. L-H During the data portion of a write sequence : Both bytes (D[17:0]) are written into the device. – During the data portion of a write sequence : Only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered. L–H During the data portion of a write sequence : Only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered. – During the data portion of a write sequence : Only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered. L–H During the data portion of a write sequence : Only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered. – No data is written into the devices during this portion of a write operation. L–H No data is written into the devices during this portion of a write operation. Notes 2. X = “Don't Care,” H = Logic HIGH, L = Logic LOW, ↑represents rising edge. 3. Device powers up deselected with the outputs in a tristate condition. 4. “A” represents address location latched by the devices when transaction was initiated. A + 0, A + 1 represents the internal address sequence in the burst. 5. “t” represents the cycle at which a Read/Write operation is started. t + 1, and t + 2 are the first, and second clock cycles respectively succeeding the “t” clock cycle. 6. Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode. 7. It is recommended that K = K and C = C = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically. 8. Is based on a write cycle that was initiated in accordance with the Write Cycle Descriptions table. BWS0, BWS1, BWS2, and BWS3 can be altered on different portions of a write cycle, as long as the setup and hold requirements are achieved. Document #: 001-07164 Rev. *G Page 9 of 25 [+] Feedback CY7C1312CV18 CY7C1314CV18 Write Cycle Descriptions The write cycle description table for CY7C1314CV18 follows. [2, 8] BWS0 BWS1 BWS2 BWS3 K K Comments L L L L L–H – During the data portion of a write sequence, all four bytes (D[35:0]) are written into the device. L L L L – L H H H L–H L H H H – H L H H L–H H L H H – H H L H L–H H H L H – H H H L L–H H H H L – H H H H L–H H H H H – Document #: 001-07164 Rev. *G L–H During the data portion of a write sequence, all four bytes (D[35:0]) are written into the device. – During the data portion of a write sequence, only the lower byte (D[8:0]) is written into the device. D[35:9] remains unaltered. L–H During the data portion of a write sequence, only the lower byte (D[8:0]) is written into the device. D[35:9] remains unaltered. – During the data portion of a write sequence, only the byte (D[17:9]) is written into the device. D[8:0] and D[35:18] remains unaltered. L–H During the data portion of a write sequence, only the byte (D[17:9]) is written into the device. D[8:0] and D[35:18] remains unaltered. – During the data portion of a write sequence, only the byte (D[26:18]) is written into the device. D[17:0] and D[35:27] remains unaltered. L–H During the data portion of a write sequence, only the byte (D[26:18]) is written into the device. D[17:0] and D[35:27] remains unaltered. – During the data portion of a write sequence, only the byte (D[35:27]) is written into the device. D[26:0] remains unaltered. L–H During the data portion of a write sequence, only the byte (D[35:27]) is written into the device. D[26:0] remains unaltered. – No data is written into the device during this portion of a write operation. L–H No data is written into the device during this portion of a write operation. Page 10 of 25 [+] Feedback CY7C1312CV18 CY7C1314CV18 IEEE 1149.1 Serial Boundary Scan (JTAG) These SRAMs incorporate a serial boundary scan Test Access Port (TAP) in the FBGA package. This part is fully compliant with IEEE Standard #1149.1-2001. The TAP operates using JEDEC standard 1.8V IO logic levels. Disabling the JTAG Feature It is possible to operate the SRAM without using the JTAG feature. To disable the TAP controller, TCK must be tied LOW (VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternatively be connected to VDD through a pull up resistor. TDO must be left unconnected. Upon power up, the device comes up in a reset state, which does not interfere with the operation of the device. Test Access Port—Test Clock The test clock is used only with the TAP controller. All inputs are captured on the rising edge of TCK. All outputs are driven from the falling edge of TCK. Test Mode Select (TMS) The TMS input is used to give commands to the TAP controller and is sampled on the rising edge of TCK. This pin may be left unconnected if the TAP is not used. The pin is pulled up internally, resulting in a logic HIGH level. Test Data-In (TDI) The TDI pin is used to serially input information into the registers and can be connected to the input of any of the registers. The register between TDI and TDO is chosen by the instruction that is loaded into the TAP instruction register. For information on loading the instruction register, see the TAP Controller State Diagram on page 13. TDI is internally pulled up and can be unconnected if the TAP is unused in an application. TDI is connected to the most significant bit (MSB) on any register. Instruction Register Three-bit instructions can be serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO pins, as shown in TAP Controller Block Diagram on page 14. Upon power up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state, as described in the previous section. When the TAP controller is in the Capture-IR state, the two least significant bits are loaded with a binary “01” pattern to allow for fault isolation of the board level serial test path. Bypass Register To save time when serially shifting data through registers, it is sometimes advantageous to skip certain chips. The bypass register is a single-bit register that can be placed between TDI and TDO pins. This enables shifting of data through the SRAM with minimal delay. The bypass register is set LOW (VSS) when the BYPASS instruction is executed. Boundary Scan Register The boundary scan register is connected to all of the input and output pins on the SRAM. Several No Connect (NC) pins are also included in the scan register to reserve pins for higher density devices. The boundary scan register is loaded with the contents of the RAM input and output ring when the TAP controller is in the Capture-DR state and is then placed between the TDI and TDO pins when the controller is moved to the Shift-DR state. The EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions can be used to capture the contents of the input and output ring. The Boundary Scan Order on page 17 shows the order in which the bits are connected. Each bit corresponds to one of the bumps on the SRAM package. The MSB of the register is connected to TDI, and the LSB is connected to TDO. Test Data-Out (TDO) Identification (ID) Register The TDO output pin is used to serially clock data out from the registers. The output is active, depending upon the current state of the TAP state machine (see Instruction Codes on page 16). The output changes on the falling edge of TCK. TDO is connected to the least significant bit (LSB) of any register. The ID register is loaded with a vendor-specific, 32-bit code during the Capture-DR state when the IDCODE command is loaded in the instruction register. The IDCODE is hardwired into the SRAM and can be shifted out when the TAP controller is in the Shift-DR state. The ID register has a vendor code and other information described in Identification Register Definitions on page 16. Performing a TAP Reset A Reset is performed by forcing TMS HIGH (VDD) for five rising edges of TCK. This Reset does not affect the operation of the SRAM and can be performed while the SRAM is operating. At power up, the TAP is reset internally to ensure that TDO comes up in a high-Z state. TAP Registers Registers are connected between the TDI and TDO pins to scan the data in and out of the SRAM test circuitry. Only one register can be selected at a time through the instruction registers. Data is serially loaded into the TDI pin on the rising edge of TCK. Data is output on the TDO pin on the falling edge of TCK. Document #: 001-07164 Rev. *G TAP Instruction Set Eight different instructions are possible with the three-bit instruction register. All combinations are listed in Instruction Codes on page 16. Three of these instructions are listed as RESERVED and must not be used. The other five instructions are described in this section in detail. Instructions are loaded into the TAP controller during the Shift-IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted through the instruction register through the TDI and TDO pins. To execute the instruction after it is shifted in, the TAP controller must be moved into the Update-IR state. Page 11 of 25 [+] Feedback CY7C1312CV18 CY7C1314CV18 IDCODE BYPASS The IDCODE instruction loads a vendor-specific, 32-bit code into the instruction register. It also places the instruction register between the TDI and TDO pins and shifts the IDCODE out of the device when the TAP controller enters the Shift-DR state. The IDCODE instruction is loaded into the instruction register at power up or whenever the TAP controller is supplied a Test-Logic-Reset state. When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a Shift-DR state, the bypass register is placed between the TDI and TDO pins. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. SAMPLE Z The SAMPLE Z instruction connects the boundary scan register between the TDI and TDO pins when the TAP controller is in a Shift-DR state. The SAMPLE Z command puts the output bus into a High-Z state until the next command is supplied during the Update IR state. SAMPLE/PRELOAD SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When the SAMPLE/PRELOAD instructions are loaded into the instruction register and the TAP controller is in the Capture-DR state, a snapshot of data on the input and output pins is captured in the boundary scan register. The user must be aware that the TAP controller clock can only operate at a frequency up to 20 MHz, while the SRAM clock operates more than an order of magnitude faster. Because there is a large difference in the clock frequencies, it is possible that during the Capture-DR state, an input or output undergoes a transition. The TAP may then try to capture a signal while in transition (metastable state). This does not harm the device, but there is no guarantee as to the value that is captured. Repeatable results may not be possible. To guarantee that the boundary scan register captures the correct value of a signal, the SRAM signal must be stabilized long enough to meet the TAP controller's capture setup plus hold times (tCS and tCH). The SRAM clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a SAMPLE/PRELOAD instruction. If this is an issue, it is still possible to capture all other signals and simply ignore the value of the CK and CK captured in the boundary scan register. EXTEST The EXTEST instruction drives the preloaded data out through the system output pins. This instruction also connects the boundary scan register for serial access between the TDI and TDO in the Shift-DR controller state. EXTEST OUTPUT BUS TRISTATE IEEE Standard 1149.1 mandates that the TAP controller be able to put the output bus into a tristate mode. The boundary scan register has a special bit located at bit #47. When this scan cell, called the “extest output bus tristate,” is latched into the preload register during the Update-DR state in the TAP controller, it directly controls the state of the output (Q-bus) pins, when the EXTEST is entered as the current instruction. When HIGH, it enables the output buffers to drive the output bus. When LOW, this bit places the output bus into a High-Z condition. This bit can be set by entering the SAMPLE/PRELOAD or EXTEST command, and then shifting the desired bit into that cell, during the Shift-DR state. During Update-DR, the value loaded into that shift-register cell latches into the preload register. When the EXTEST instruction is entered, this bit directly controls the output Q-bus pins. Note that this bit is pre-set LOW to enable the output when the device is powered up, and also when the TAP controller is in the Test-Logic-Reset state. Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions. After the data is captured, it is possible to shift out the data by putting the TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO pins. PRELOAD places an initial data pattern at the latched parallel outputs of the boundary scan register cells before the selection of another boundary scan test operation. The shifting of data for the SAMPLE and PRELOAD phases can occur concurrently when required, that is, while the data captured is shifted out, the preloaded data can be shifted in. Document #: 001-07164 Rev. *G Page 12 of 25 [+] Feedback CY7C1312CV18 CY7C1314CV18 TAP Controller State Diagram The state diagram for the TAP controller follows.[9] 1 TEST-LOGIC RESET 0 0 TEST-LOGIC/ IDLE 1 SELECT DR-SCAN 1 1 SELECT IR-SCAN 0 0 1 1 CAPTURE-DR CAPTURE-IR 0 0 SHIFT-DR 0 SHIFT-IR 1 1 EXIT1-DR 1 EXIT1-IR 0 1 0 PAUSE-DR 0 PAUSE-IR 1 0 1 0 EXIT2-DR 0 EXIT2-IR 1 1 UPDATE-IR UPDATE-DR 1 0 0 1 0 Note 9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document #: 001-07164 Rev. *G Page 13 of 25 [+] Feedback CY7C1312CV18 CY7C1314CV18 TAP Controller Block Diagram 0 Bypass Register 2 Selection Circuitry TDI 1 0 Selection Circuitry Instruction Register 31 30 29 . . 2 1 0 1 0 TDO Identification Register 106 . . . . 2 Boundary Scan Register TCK TAP Controller TMS TAP Electrical Characteristics Over the Operating Range[10, 11, 12] Parameter Description VOH1 Output HIGH Voltage Test Conditions 1.4 1.6 VOH2 Output HIGH Voltage IOH = −100 μA VOL1 Output LOW Voltage IOL = 2.0 mA IOL = 100 μA VOL2 Output LOW Voltage VIH Input HIGH Voltage VIL Input LOW Voltage IX Input and Output Load Current Min IOH = −2.0 mA Max Unit V V 0.4 V 0.2 V 0.65VDD VDD + 0.3 –0.3 0.35VDD GND ≤ VI ≤ VDD –5 5 V V μA Notes 10. These characteristics pertain to the TAP inputs (TMS, TCK, TDI, and TDO). Parallel load levels are specified in the Electrical Characteristics table. 11. Overshoot: VIH(AC) < VDDQ + 0.85V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > −1.5V (Pulse width less than tCYC/2). 12. All Voltage referenced to Ground. Document #: 001-07164 Rev. *G Page 14 of 25 [+] Feedback CY7C1312CV18 CY7C1314CV18 TAP AC Switching Characteristics Over the Operating Range[13, 14] Parameter tTCYC tTF tTH tTL Setup Times tTMSS tTDIS tCS Hold Times tTMSH tTDIH tCH Output Times tTDOV tTDOX Description Min 50 20 20 Unit ns MHz ns ns TMS Setup to TCK Clock Rise TDI Setup to TCK Clock Rise Capture Setup to TCK Rise 5 5 5 ns ns ns TMS Hold after TCK Clock Rise TDI Hold after Clock Rise Capture Hold after Clock Rise 5 5 5 ns ns ns TCK Clock LOW to TDO Valid TCK Clock LOW to TDO Invalid 0 TCK Clock Cycle Time TCK Clock Frequency TCK Clock HIGH TCK Clock LOW Max 20 10 ns ns TAP Timing and Test Conditions Figure 2 shows the TAP timing and test conditions.[14] Figure 2. TAP Timing and Test Conditions 0.9V ALL INPUT PULSES 1.8V 50Ω 0.9V TDO 0V Z0 = 50Ω (a) CL = 20 pF tTH GND tTL Test Clock TCK tTCYC tTMSH tTMSS Test Mode Select TMS tTDIS tTDIH Test Data In TDI Test Data Out TDO tTDOV tTDOX Notes 13. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register. 14. Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns. Document #: 001-07164 Rev. *G Page 15 of 25 [+] Feedback CY7C1312CV18 CY7C1314CV18 Identification Register Definitions Value Instruction Field CY7C1312CV18 CY7C1314CV18 000 000 Cypress Device ID (28:12) 11010011010010101 11010011010100101 Cypress JEDEC ID (11:1) 00000110100 00000110100 ID Register Presence (0) 1 1 Revision Number (31:29) Description Version number. Defines the type of SRAM. Allows unique identification of SRAM vendor. Indicates the presence of an ID register. Scan Register Sizes Register Name Bit Size Instruction 3 Bypass 1 ID 32 Boundary Scan 107 Instruction Codes Instruction Code Description EXTEST 000 Captures the input and output ring contents. IDCODE 001 Loads the ID register with the vendor ID code and places the register between TDI and TDO. This operation does not affect SRAM operation. SAMPLE Z 010 Captures the input and output contents. Places the boundary scan register between TDI and TDO. Forces all SRAM output drivers to a High-Z state. RESERVED 011 Do Not Use: This instruction is reserved for future use. SAMPLE/PRELOAD 100 Captures the input and output ring contents. Places the boundary scan register between TDI and TDO. Does not affect the SRAM operation. RESERVED 101 Do Not Use: This instruction is reserved for future use. RESERVED 110 Do Not Use: This instruction is reserved for future use. BYPASS 111 Places the bypass register between TDI and TDO. This operation does not affect SRAM operation. Document #: 001-07164 Rev. *G Page 16 of 25 [+] Feedback CY7C1312CV18 CY7C1314CV18 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bump ID 0 6R 28 10G 56 6A 84 2J 1 6P 29 9G 57 5B 85 3K 2 6N 30 11F 58 5A 86 3J 3 7P 31 11G 59 4A 87 2K 4 7N 32 9F 60 5C 88 1K 5 7R 33 10F 61 4B 89 2L 6 8R 34 11E 62 3A 90 3L 7 8P 35 10E 63 1H 91 1M 8 9R 36 10D 64 1A 92 1L 9 11P 37 9E 65 2B 93 3N 10 10P 38 10C 66 3B 94 3M 11 10N 39 11D 67 1C 95 1N 12 9P 40 9C 68 1B 96 2M 13 10M 41 9D 69 3D 97 3P 14 11N 42 11B 70 3C 98 2N 15 9M 43 11C 71 1D 99 2P 16 9N 44 9B 72 2C 100 1P 17 11L 45 10B 73 3E 101 3R 18 11M 46 11A 74 2D 102 4R 19 9L 47 Internal 75 2E 103 4P 20 10L 48 9A 76 1E 104 5P 21 11K 49 8B 77 2F 105 5N 22 10K 50 7C 78 3F 106 5R 1G 23 9J 51 6C 79 24 9K 52 8A 80 1F 25 10J 53 7A 81 3G 26 11J 54 7B 82 2G 27 11H 55 6B 83 1J Document #: 001-07164 Rev. *G Page 17 of 25 [+] Feedback CY7C1312CV18 CY7C1314CV18 Power Up Sequence in QDR II SRAM QDR II SRAMs must be powered up and initialized in a predefined manner to prevent undefined operations. Power Up Sequence ■ Apply power and drive DOFF either HIGH or LOW (all other inputs can be HIGH or LOW). ❐ Apply VDD before VDDQ. ❐ Apply VDDQ before VREF or at the same time as VREF. ❐ Drive DOFF HIGH. ■ Provide stable DOFF (HIGH), power, and clock (K, K) for 1024 cycles to lock the DLL. DLL Constraints ■ DLL uses K clock as its synchronizing input. The input must have low phase jitter, which is specified as tKC Var. ■ The DLL functions at frequencies down to 120 MHz. ■ If the input clock is unstable and the DLL is enabled, then the DLL may lock onto an incorrect frequency, causing unstable SRAM behavior. To avoid this, provide1024 cycles stable clock to relock to the desired clock frequency. ~ ~ Figure 3. Power Up Waveforms K K ~ ~ Unstable Clock > 1024 Stable clock Start Normal Operation Clock Start (Clock Starts after V DD / V DDQ Stable) VDD / VDDQ DOFF Document #: 001-07164 Rev. *G V DD / V DDQ Stable (< +/- 0.1V DC per 50ns ) Fix High (or tie to VDDQ) Page 18 of 25 [+] Feedback CY7C1312CV18 CY7C1314CV18 Maximum Ratings Neutron Soft Error Immunity Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested. Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied.. –55°C to +125°C Parameter Current into Outputs (LOW)......................................... 20 mA Static Discharge Voltage (MIL-STD-883, M. 3015).. > 2001V Latch up Current.................................................... > 200 mA Typ Max* Unit Logical Single-Bit Upsets 25°C 320 368 FIT/ Mb LMBU Logical Multi-Bit Upsets 25°C 0 0.01 FIT/ Mb Single Event Latch up 85°C 0 0.1 FIT/ Dev DC Applied to Outputs in High-Z ........ –0.5V to VDDQ + 0.3V DC Input Voltage [11] .............................. –0.5V to VDD + 0.3V Test Conditions LSBU Supply Voltage on VDD Relative to GND ........–0.5V to +2.9V Supply Voltage on VDDQ Relative to GND.......–0.5V to +VDD Description SEL * No LMBU or SEL events occurred during testing; this column represents a statistical χ2, 95% confidence limit calculation. For more details refer to Application Note AN 54908 “Accelerated Neutron SER Testing and Calculation of Terrestrial Failure Rates” Operating Range Range Commercial Industrial Ambient Temperature (TA) VDD [15] VDDQ [15] 0°C to +70°C 1.8 ± 0.1V 1.4V to VDD –40°C to +85°C Electrical Characteristics DC Electrical Characteristics Over the Operating Range[12] Min Typ Max Unit VDD Parameter Power Supply Voltage Description 1.7 1.8 1.9 V VDDQ IO Supply Voltage 1.4 1.5 VDD V VOH Output HIGH Voltage Note 16 VDDQ/2 – 0.12 VDDQ/2 + 0.12 V VOL Output LOW Voltage Note 17 VDDQ/2 – 0.12 VDDQ/2 + 0.12 V VOH(LOW) Output HIGH Voltage IOH = −0.1 mA, Nominal Impedance VDDQ – 0.2 VDDQ V VOL(LOW) Output LOW Voltage IOL = 0.1 mA, Nominal Impedance VSS 0.2 V VIH Input HIGH Voltage VREF + 0.1 VDDQ + 0.3 V VIL Input LOW Voltage IX Input Leakage Current IOZ Output Leakage Current VREF Input Reference Voltage IDD [19] VDD Operating Supply Test Conditions [18] –0.3 VREF – 0.1 V GND ≤ VI ≤ VDDQ −5 5 μA GND ≤ VI ≤ VDDQ, Output Disabled −5 5 μA Typical Value = 0.75V VDD = Max, IOUT = 0 mA, f = fMAX = 1/tCYC 0.95 V 250 MHz (x18) 0.68 0.75 800 mA (x36) 900 200 MHz (x18) 675 (x36) 750 167 MHz (x18) 600 (x36) 650 Notes 15. Power up: Assumes a linear ramp from 0V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ < VDD. 16. Output are impedance controlled. IOH = −(VDDQ/2)/(RQ/5) for values of 175Ω ≤ RQ ≤ 350Ω. 17. Output are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175Ω ≤ RQ ≤ 350Ω. 18. VREF (min) = 0.68V or 0.46VDDQ, whichever is larger, VREF (max) = 0.95V or 0.54VDDQ, whichever is smaller. 19. The operation current is calculated with 50% read cycle and 50% write cycle. Document #: 001-07164 Rev. *G Page 19 of 25 [+] Feedback CY7C1312CV18 CY7C1314CV18 Electrical Characteristics (continued) DC Electrical Characteristics Over the Operating Range[12] Parameter ISB1 Description Test Conditions Automatic Power Down Current Max VDD, Both Ports Deselected, VIN ≥ VIH or VIN ≤ VIL f = fMAX = 1/tCYC, Inputs Static Max Unit 250 MHz (x18) Min Typ 400 mA (x36) 450 200 MHz (x18) 380 (x36) 400 167 MHz (x18) 360 (x36) 370 AC Electrical Characteristics Over the Operating Range[11] Parameter Description Test Conditions Min Typ VIH Input HIGH Voltage VREF + 0.2 VIL Input LOW Voltage – Max Unit – – V – VREF – 0.2 V Capacitance Tested initially and after any design or process change that may affect these parameters. Parameter Description Test Conditions Max Unit CIN Input Capacitance 5 pF CCLK Clock Input Capacitance 6 pF CO Output Capacitance 7 pF 165 FBGA Package Unit 18.7 °C/W 4.5 °C/W TA = 25°C, f = 1 MHz, VDD = 1.8V, VDDQ = 1.5V Thermal Resistance Tested initially and after any design or process change that may affect these parameters. Parameter Description ΘJA Thermal Resistance (Junction to Ambient) ΘJC Thermal Resistance (Junction to Case) Test Conditions Test conditions follow standard test methods and procedures for measuring thermal impedance, in accordance with EIA/JESD51. Figure 4. AC Test Loads and Waveforms VREF = 0.75V VREF 0.75V VREF OUTPUT Z0 = 50Ω Device Under Test RL = 50Ω VREF = 0.75V ZQ R = 50Ω ALL INPUT PULSES 1.25V 0.75V OUTPUT Device Under Test ZQ RQ = 250Ω (a) 0.75V INCLUDING JIG AND SCOPE 5 pF [20] 0.25V Slew Rate = 2 V/ns RQ = 250Ω (b) Note 20. Unless otherwise noted, test conditions are based on signal transition time of 2V/ns, timing reference levels of 0.75V, Vref = 0.75V, RQ = 250Ω, VDDQ = 1.5V, input pulse levels of 0.25V to 1.25V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of AC Test Loads and Waveforms. Document #: 001-07164 Rev. *G Page 20 of 25 [+] Feedback CY7C1312CV18 CY7C1314CV18 Switching Characteristics Over the Operating Range [20, 21] Cypress Parameter tPOWER tCYC tKH tKL tKHKH Consortium Parameter tKHKH tKHKL tKLKH tKHKH tKHCH tKHCH Setup Times tAVKH tSA tIVKH tSC tIVKH tSCDDR tSD tDVKH Hold Times tKHAX tHA tKHIX tHC tKHIX tHCDDR tHD tKHDX Output Times tCHQV tCO tCHQX tDOH 250 MHz Description Unit 8.4 – – – 1 5.0 2.0 2.0 2.2 8.4 – – – 1 6.0 2.4 2.4 2.7 8.4 – – – ms ns ns ns ns 0 1.8 0 2.2 0 2.7 ns Address Setup to K Clock Rise Control Setup to K Clock Rise (RPS, WPS) DDR Control Setup to Clock (K/K) Rise (BWS0, BWS1, BWS3, BWS4) D[X:0] Setup to Clock (K/K) Rise 0.35 0.35 0.35 – – – 0.4 0.4 0.4 – – – 0.5 0.5 0.5 – – – ns ns ns 0.35 – 0.4 – 0.5 – ns Address Hold after K Clock Rise Control Hold after K Clock Rise (RPS, WPS) DDR Control Hold after Clock (K/K) Rise (BWS0, BWS1, BWS3, BWS4) D[X:0] Hold after Clock (K/K) Rise 0.35 0.35 0.35 – – – 0.4 0.4 0.4 – – – 0.5 0.5 0.5 – – – ns ns ns 0.35 – 0.4 – 0.5 – ns tCHCQV tCHCQX tCQD tCQDOH tCQHQV tCQHQX Echo Clock High to Data Valid Echo Clock High to Data Invalid tCQH tCQHCQH tCQHCQL tCQHCQH tCHZ tCLZ tCHQZ tCHQX1 Output Clock (CQ/CQ) HIGH [23] CQ Clock Rise to CQ Clock Rise (rising edge to rising edge) [23] Clock (C/C) Rise to High-Z (Active to High-Z) [24, 25] Clock (C/C) Rise to Low-Z [24, 25] tKC Reset Min Max Min Max Min Max 1 4.0 1.6 1.6 1.8 tCCQO tCQOH tKC Reset 167 MHz VDD(Typical) to the First Access [22] K Clock and C Clock Cycle Time Input Clock (K/K and C/C) HIGH Input Clock (K/K and C/C) LOW K Clock Rise to K Clock Rise and C to C Rise (rising edge to rising edge) K/K Clock Rise to C/C Clock Rise (rising edge to rising edge) C/C Clock Rise (or K/K in Single Clock Mode) to Data Valid Data Output Hold after Output C/C Clock Rise (Active to Active) C/C Clock Rise to Echo Clock Valid Echo Clock Hold after C/C Clock Rise DLL Timing tKC Var tKC Var tKC lock tKC lock 200 MHz Clock Phase Jitter DLL Lock Time (K, C) K Static to DLL Reset – 0.45 – 0.45 – 0.50 –0.4 – –0.4 – –0.5 – 5 5 0 – 0.45 – 0.45 – 0.50 –0.4 – –0.4 – –0.5 – 5 5 0 – 0.30 – 0.35 – 0.40 –0.3 – –0.3 – –0.4 – 0 5 0 1.55 – 1.95 – 2.45 – 1.55 – 1.95 – 2.45 – – 0.45 – 0.45 – 0.50 –0.4 – –0.4 – –0.5 – 5 5 0 ns ns ns ns ns ns ns ns ns ns – 0.20 – 0.20 – 0.20 ns 1024 – 1024 – 1024 – Cycle s 30 – 30 – 30 – ns Notes 21. When a part with a maximum frequency above 167 MHz is operating at a lower clock frequency, it requires the input timing of the frequency range in which it is being operated and outputs data with the output timings of that frequency range. 22. This part has a voltage regulator internally; tPOWER is the time that the power is supplied above VDD minimum initially before a read or write operation is initiated. 23. These parameters are extrapolated from the input timing parameters (tKHKH - 250 ps, where 250 ps is the internal jitter. An input jitter of 200 ps (tKC Var) is already included in the tKHKH). These parameters are only guaranteed by design and are not tested in production. 24. tCHZ, tCLZ, are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads and Waveforms. Transition is measured ± 100 mV from steady state voltage. 25. At any voltage and temperature tCHZ is less than tCLZ and tCHZ less than tCO. Document #: 001-07164 Rev. *G Page 21 of 25 [+] Feedback CY7C1312CV18 CY7C1314CV18 Switching Waveforms Figure 5. Read/Write/Deselect Sequence[26, 27, 28] READ WRITE READ WRITE READ WRITE NOP WRITE NOP 1 2 3 4 5 6 7 8 9 10 K tKH tKL tKHKH tCYC K RPS tSC t HC WPS A D A1 A2 tSA tHA tSA tHA D11 D30 A0 D10 A3 A4 A5 D31 D50 D51 tSD Q00 t CLZ C tKL tKH tKHCH D60 D61 tSD tHD tHD Q tKHCH A6 Q01 tDOH tCO Q20 Q21 Q41 Q40 tCQDOH t CHZ tCQD t CYC tKHKH C tCQOH tCCQO CQ tCQOH tCCQO tCQH tCQHCQH CQ DON’T CARE UNDEFINED Notes 26. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0+1. 27. Outputs are disabled (High-Z) one clock cycle after a NOP. 28. In this example, if address A0 = A1, then data Q00 = D10 and Q01 = D11. Write data is forwarded immediately as read results. This note applies to the whole diagram. Document #: 001-07164 Rev. *G Page 22 of 25 [+] Feedback CY7C1312CV18 CY7C1314CV18 Ordering Information The following table contains only the parts that are currently available. If you do not see what you are looking for, contact your local sales representative. For more information, visit the Cypress website at www.cypress.com and refer to the product summary page at http://www.cypress.com/products. Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives and distributors. To find the office closest to you, visit us at http://www.cypress.com/go/datasheet/offices Table 1. Ordering Information Speed (MHz) 250 Ordering Code CY7C1312CV18-250BZC Package Diagram Package Type 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Operating Range Commercial CY7C1314CV18-250BZC 200 CY7C1312CV18-250BZXC 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free CY7C1312CV18-250BZI 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Industrial CY7C1312CV18-200BZC 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Commercial CY7C1314CV18-200BZC 167 CY7C1314CV18-200BZI 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Industrial CY7C1312CV18-167BZC 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Commercial 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Industrial CY7C1314CV18-167BZC CY7C1312CV18-167BZI Document #: 001-07164 Rev. *G Page 23 of 25 [+] Feedback CY7C1312CV18 CY7C1314CV18 Package Diagram Figure 6. 165-Ball FBGA (13 x 15 x 1.4 mm), 51-85180 TOP VIEW BOTTOM VIEW PIN 1 CORNER PIN 1 CORNER Ø0.08 M C 1 2 3 4 5 6 7 8 9 10 11 Ø0.25 M C A B A -0.06 (165X) Ø0.50 +0.14 B 11 C 10 9 8 7 6 5 4 3 2 1 A D B E C 1.00 F D 15.00±0.10 G E H F K L M G 14.00 15.00±0.10 J H J K N L 7.00 P M R N A P R A B 1.00 5.00 13.00±0.10 SEATING PLANE 0.35±0.06 C B 0.15 C 1.40 MAX. 0.53±0.05 0.36 0.25 C 10.00 13.00±0.10 0.15(4X) NOTES : SOLDER PAD TYPE : NON-SOLDER MASK DEFINED (NSMD) PACKAGE WEIGHT : 0.475g JEDEC REFERENCE : MO-216 / ISSUE E PACKAGE CODE : BB0AC 51-85180 *C Document #: 001-07164 Rev. *G Page 24 of 25 [+] Feedback CY7C1312CV18 CY7C1314CV18 Document History Page Document Title: CY7C1312CV18/CY7C1314CV18, 18-Mbit QDR® II SRAM 2-Word Burst Architecture Document Number: 001-07164 Rev. ECN No. Submission Date Orig. of Change Description of Change ** 433284 See ECN NXR New data sheet *A 462615 See ECN NXR Changed tTH and tTL from 40 ns to 20 ns, changed tTMSS, tTDIS, tCS, tTMSH, tTDIH, tCH from 10 ns to 5 ns and changed tTDOV from 20 ns to 10 ns in TAP AC Switching Characteristics table Modified Power Up waveform *B 503690 See ECN VKN Minor change: Moved data sheet to web *C 1274723 See ECN VKN/AESA Corrected typo in the JTAG ID code for CY7C1910CV18 *D 1523505 See ECN VKN/AESA Converted from preliminary to final, Updated Logic Block diagram, Updated IDD/ISB specs, Changed DLL minimum operating frequency from 80MHz to 120MHz, Changed tCYC max spec to 8.4ns for all speed bins, Modified footnotes 20 and 28. *E 2507766 05/23/08 VKN/PYRS Changed Ambient Temperature with Power Applied from “–10°C to +85°C” to “–55°C to +125°C” in the “Maximum Ratings“ on page 20, Updated IDD/ISB specs, Updated power up sequence waveform and its description, Added footnote #19 related to IDD, Changed ΘJA spec from 28.51 to 18.7; changed ΘJC spec from 5.91 to 4.5, Changed JTAG ID [31:29] from 001 to 000. *F 2755838 08/25/2009 VKN/AESA Removed x8 and x9 part number details Included Soft Error Immunity Data Modified Ordering Information table by including parts that are available and modified the disclaimer for the Ordering information. *G 2822813 12/07/09 VKN/PYRS Included CY7C1312CV18-250BZI part in Ordering Information table. Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturers representatives, and distributors. To find the office closest to you, visit us at cypress.com/sales. Products PSoC Clocks & Buffers psoc.cypress.com clocks.cypress.com Wireless wireless.cypress.com Memories memory.cypress.com Image Sensors image.cypress.com © Cypress Semiconductor Corporation, 2006-2009. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress. Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document #: 001-07164 Rev. *G Revised December 07, 2009 Page 25 of 25 QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, IDT, NEC, Renesas, and Samsung. All product and company names mentioned in this document are the trademarks of their respective holders. [+] Feedback